S8838 Search Results

Y31-Y1G

Abstract: sn74as8838 SN54AS8838 Y15-Y0
Contextual Info: SN 54A S8838 32 BIT BARREL SHIFTERS PRODUCT PREVIEW e le c tric a l c h a ra c te ris tic s o ve r reco m m en d e d o p e ra tin g te m p e ra tu re range unless o th e rw is e noted - ~ TE ST C O N D ITIO N S

Contextual Info: TOSHIBA S8838A MICROWAVE POWER GaAs FET Power GaAs FETs Packaged Features • High power - P1dB = 33.5 dBm at f = 8 GHz • High gain - G1dB = 5.5 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

PAL Decoder 16L8

Abstract: 74AS8838 4 bit barrel shifter using mux Decoder 16L8 3z fuse barrel shifter P16L8 pal 002 sn74as8838 PAL 16L8
Contextual Info: SN 74A S8838 32-Bit Barrel Shifter • High-speed “ flash” shift operations • Shifts up to 32 positions in less than 25 ns • Performs logical, circular and arithmetic shifts • 3-state outputs allow 32-bit and 16-bit bus interface • 24 m A bus drivers

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8838A Power GaAs FETs Chip Form Features • High power - P idB = 33.5 dBm at f = 8 GHz • High gain - G idB = 5.5 dB at f = 8 GHz • Suitable for C-Band am plifier • Ion implantation RF Performance Specifications (Ta = 25° C)

S8838A

Contextual Info: TOSHIBA M IC R O W A VE POWER GaAs FE T S8838A MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES: • HIGH POWER = 3 3 .5 dBm at f = 8 GHz SUITABLE FOR C-BAND AMPLIFIER ■ HIGH GAIN J1dB = 5.5 dB at f = 8 GHz ION IMPLANTATION RF PERFO RM AN CE S P E C IF IC A T IO N S T a = 25°C

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8838A Power GaAs FETs Chip Form Features • High power - P-idB = 33.5 dBm at f = 8 GHz • High gain - G 1dB = 5.5 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

LA 7838

Contextual Info: Am7838 •Am8838 Quad Unified Bus Transceiver D IS T IN C T IV E CHARACTERISTICS FU N C TIO N A L DESCRIPTION • T h e A m 7 8 3 8 • A m 8 8 3 8 are quad high-speed drivers/receivers designed fo r use in bus organized d ata tra n sm issio n system s in te rc o n n e c te d b y te rm in a te d 12012 im pedance lines. The

7400A

Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions

JS8834-AS

Contextual Info: Microwave Semiconductors Power GaAs FETs J10 Type No. Freq. Band GHz S8834 JS8834-AS S8835 JS8835-AS PicB Typ. GiteTyp. (dBm) (dB) Ids = Idss/2 nadd Typ. (%) Ftest (GHz ) Vos (V) 21 9 27 8 10 24 8 26 8 10 29.5 7.5 30 8 10 32 7 28 8 10 33.5 5.5 25 8 10 36

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

MDM 6600

Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
Contextual Info: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1

Contextual Info: A B I C D E F NOTES: 1. MATERIAL: 1.1 HOUSING: THERMOPLASTIC, HIGH TEMP., UL94V-0; 1.2 CONTACT: COPPER ALLOY 2. FINISH: 2.1 CONTACT: , 1.8±o. 1 1 1.8±o.i , 2.4±o.i SEE ACES P/N PLATING CODE 3. REFLOW SOLDER CAPABLE TO 260°C PER ACES SPEC. 4. SPEC. PLS. REFER TO P S-88383-xxxxx

74AS8838

Abstract: S8838 RESULT11 sn74as8838
Contextual Info: S8838, SN74AS883B 32-BIT BARREL SHIFTERS D 2 9 3 8 , NOVEMBER 1 9 8 5 - REVISED M AR C H 1 9 8 6 • High-Speed "Flash" Shift Operations • Shifts up to 32 Positions in Less than 25 ns • Performs Logical, Circular, and Arithmetic Shifts • 3-State Outputs Allow 32-Bit and 16-Bit

DS8838J

Abstract: DS7838J 200S DS8838N 180J2
Contextual Info: Am7838 •Am8838 Quad Unified Bus Transceiver D IS T IN C T IV E C H A R A C T E R IS T IC S F U N C T IO N A L D E S C R IP T IO N • 4 t o ta lly separate driver/receiver pairs per package. T h e A m 7 8 3 8 • A m 8 8 3 8 are qu ad high-speed drivers/receivers

Y12 305

Abstract: CI 7408 el 7406 itt 789 sn74as8838 SN74AS8839 AS8839
Contextual Info: p SN74AS8839 32-Bit Shuffle/Exchange Network • High speed data m anipulation • Shuffles up to 32-Bit data streams • Performs shuffle and exchange perm utations on entire data streams or substrings for implementing algorithms an d /or matrix operations

SN74AS8838

Abstract: K2I transistor sn54as8838 D31-DO IE10 L2D13
Contextual Info: S N 54A S 8838, S N 74A S 8838 32 BIT BARREL SHIFTERS 0 2 9 3 8 , NOVEMBER 1 9 8 5 -R E V IS E D M ARC H 1 9 8 6 SN S8838. SN S8838 G B P IN -G R ID -A R R A Y P AC KA G E • H igh -S peed " F la s h " S h ift O perations • S hifts up to 3 2 Positions in Less th a n 2 5 ns