S8410 Search Results
S8410 Price and Stock
NXP Semiconductors MC33FS8410G6ESR2- Tape and Reel (Alt: MC33FS8410G6ESR2) |
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MC33FS8410G6ESR2 | Tape & Reel | 39 Weeks | 4,000 |
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MC33FS8410G6ESR2 | 18 Weeks | 4,000 |
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MC33FS8410G6ESR2 | 1,300 |
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NXP Semiconductors MC33FS8410G0KSR2- Tape and Reel (Alt: MC33FS8410G0KSR2) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MC33FS8410G0KSR2 | Tape & Reel | 39 Weeks | 4,000 |
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MC33FS8410G0KSR2 |
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MC33FS8410G0KSR2 | 1,550 |
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NXP Semiconductors MC33FS8410G0KS- Trays (Alt: MC33FS8410G0KS) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MC33FS8410G0KS | Tray | 39 Weeks | 780 |
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MC33FS8410G0KS | 25 |
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MC33FS8410G0KS | Bulk | 360 | 1 |
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MC33FS8410G0KS | 190 | 1 |
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MC33FS8410G0KS | 18 Weeks | 260 |
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MC33FS8410G0KS | 1,900 |
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NXP Semiconductors MC33FS8410G6KS- Trays (Alt: MC33FS8410G6KS) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MC33FS8410G6KS | Tray | 39 Weeks | 780 |
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NXP Semiconductors MC33FS8410G3ESFail-Safe System Basis Chip with Multiple SMPS and LDO 56-Pin HVQFN - Trays (Alt: MC33FS8410G3ES) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MC33FS8410G3ES | Tray | 39 Weeks | 780 |
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MC33FS8410G3ES | 1,257 |
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MC33FS8410G3ES | Bulk | 60 | 1 |
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MC33FS8410G3ES | 376 | 1 |
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MC33FS8410G3ES | 18 Weeks | 260 |
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MC33FS8410G3ES | 18 Weeks | 260 |
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MC33FS8410G3ES | 18,460 |
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MC33FS8410G3ES | 2,150 |
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S8410 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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NDS8410SContextual Info: February 1997 National Semiconductor N D S8410S Single N-Channel Enhancement M ode Field Effect Transistor General Description Features SO-8 N-Channel enhancem ent m ode pow er field effect transistors are produced using National's proprietary, high cell density, DMOS technology. |
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nds8410snds8410d33347 | |
J31C
Abstract: NDS8410
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nds84100d33347j31c | |
S8410MGContextual Info: S8410MG TECHNICAL DATA Infrared Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 840 nm Optical Ouput Power: 10 mW Package: 5.6 mm Electrical Connection Pin Configuration PIN 1 2 3 Bottom View Function LD Cathode |
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s8410mg | |
MAX1652EEE
Abstract: MAX1655 siliconix FET AUDIO AMPLIFIER s8410
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16-pinmax1653/max1655max797max1655+8 | |
MAX1652EEE
Abstract: MAX1655 controller LTA 702 N siliconix FET AUDIO AMPLIFIER CoilCraft 104
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16-pinmax1653/max1655max797max1655+6 | |
IN400SContextual Info: Semiconductor LM2640 Dual Adjustable Step-Down Switching Power Supply Controller General Description Key Specifications The LM 2640 is a dual step-dow n pow er supply controller in tended fo r application in notebook personal com puters and other battery-pow ered equipm ent. |
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lm2640re-9959in400s | |
MDM 6600
Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
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9800-oerf-0079800-oerf-005mdm 6600mt 1389 de+8 | |
LM2641
Abstract: LM2641MTC-ADJ NDS8410
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lm2641lm2641mtc-adjnds8410 | |
IN400S
Abstract: 2641M s8410
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lm2641regulation-9959in400s2641m+1 | |
smd diode UJ 64 A
Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
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rlu4116erlt390-50cmgrlt395-50cmgrlt400-50cmg+14 | |
s8410Contextual Info: March 1997 FAIRCHILD M l G C IN D U O T O R S8410A Single N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell |
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nds8410as8410as8410 |