S8136 Search Results

Contextual Info: IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 120 Qgs (nC) 32 Qgd (nC) 49 Configuration Single D Ultra Low Gate Charge Reduced Gate Drive Requirement

IRFP460LC

Abstract: SiHFP460LC IRFP460LCP
Contextual Info: IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 120 Qgs (nC) 32 Qgd (nC) 49 Configuration Single D Ultra Low Gate Charge Reduced Gate Drive Requirement

IRLL110

Abstract: IRLL110PBF IRLL110TRPBF siliconix sot-223 marking
Contextual Info: IRLL110, SiHLL110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D Surface Mount Available in Tape and Reel

IRFZ34 Datasheet

Abstract: irfz34 SiHFZ34 SiHFZ34-E3 irfz34 mosfets
Contextual Info: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration

SiHFU430A

Abstract: IRFR430A IRFU430A SiHFR430A SiHFR430A-E3 4.5V TO 100V INPUT REGULATOR
Contextual Info: IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 1.7 Qg (Max.) (nC) 24 Qgs (nC) 6.5 Qgd (nC) Ruggedness • Fully Characterized Capacitance and Avalanche Voltage

IRFL110 vishay

Abstract: irfl110pbf IRFL110 SiHFL110 SiHFL110-E3 siliconix sot-223 marking IRFL110, Siliconix
Contextual Info: IRFL110, SiHFL110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.54 Qg (Max.) (nC) 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

IRFPS35N50L

Abstract: SiHFPS35N50L SiHFPS35N50L-E3
Contextual Info: IRFPS35N50L, SiHFPS35N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.125 Qg (Max.) (nC) 230 Qgs (nC) 65 Qgd (nC) 110 Configuration

IRFPE40 equivalent

Abstract: IRFPE40 IRFPE450
Contextual Info: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 2.0 Available Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching

IRFZ14PBF

Abstract: IRFZ14 SiHFZ14 SiHFZ14-E3
Contextual Info: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements Qgd (nC) Configuration

Contextual Info: IRFI9520G, SiHFI9520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature

irll110

Abstract: SiHLL110-E3 SiHLL110
Contextual Info: IRLL110, SiHLL110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D Surface Mount Available in Tape and Reel

SiHFL110-E3

Abstract: IRFL110, Siliconix
Contextual Info: IRFL110, SiHFL110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.54 Qg (Max.) (nC) 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

inductor 1 mH

Contextual Info: IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 1.8 Available • Repetitive Avalanche Rated • Surface Mount (IRFR320/SiHFR320) 20 Qgs (nC)

4.5v to 100v input regulator

Contextual Info: IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Max.) (Ω) VGS = 10 V 7.0 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: IRFPG40, SiHFPG40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 3.5 Qg (Max.) (nC) 120 • Isolated Central Mounting Hole Qgs (nC) 16 • Fast Switching 65

4.5V TO 100V INPUT REGULATOR

Contextual Info: IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 1.7 Qg (Max.) (nC) 24 Qgs (nC) 6.5 Qgd (nC) Ruggedness • Fully Characterized Capacitance and Avalanche Voltage

irfp440

Contextual Info: IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 Qgs (nC) 11 Qgd (nC) 30 Configuration • Repetitive Avalanche Rated 0.85 • Isolated Central Mounting Hole

IRFP350

Contextual Info: IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.30 Qg (Max.) (nC) 150 Qgs (nC) 23 Qgd (nC) 80 Configuration Single D RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

irfz34

Contextual Info: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration

IRFR1N60A

Abstract: IRFU1N60A SiHFR1N60A SiHFR1N60A-E3 SiHFU1N60A SiHFU1N60A-E3 4.5v to 100v input regulator
Contextual Info: IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Max.) (Ω) VGS = 10 V 7.0 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt

irfu310

Abstract: IRFR310 SiHFR310 SiHFR310-E3 SiHFU310 vishay siliconix 99 ipak
Contextual Info: IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V 3.6 • Repetitive Avalanche Rated Qg (Max.) (nC) 12 • Surface Mount (IRFR310/SiHFR310) Qgs (nC) 1.9

IRFI9520G

Contextual Info: IRFI9520G, SiHFI9520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature

IRFPS40N50L

Abstract: SiHFPS40N50L
Contextual Info: IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.087 Available RoHS* Qg (Max.) (nC) 380 Qgs (nC) 80 • Lower Gate Charge Results in Simpler Drive

IRP460

Abstract: IRFP460A SiHFP460A irp460a
Contextual Info: IRFP460A, SiHFP460A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current