S8119 Search Results

operation of ic 741

Abstract: s6841 transistor 1BW S8119 LE UW
Contextual Info: PHOTO IC Photo IC for optical switch NEW S6841, S8119 Photo IC with optical switch functions S6841 and S8119 are specifically designed for optical switches. A transmission mode or reflection mode optical switch can be easily configured when used in combination with an LED.

S-8119

Abstract: s6841 S8119 ic T M 2313 sw 2313
Contextual Info: PHOTO IC 光電スイッチ用フォトIC S6841, S8119 光電スイッチ機能付のフォトIC 光電スイッチとして必要な機能を内蔵したフォトICです。LEDと共に使用し透過型、反射型の光電スイッチを容易に構成できます。

S6841

Abstract: S8119
Contextual Info: PHOTO IC Photo IC for optical switch NEW S6841, S8119 Photo IC with optical switch functions S6841 and S8119 are specifically designed for optical switches. A transmission mode or reflection mode optical switch can be easily configured when used in combination with an LED.

Contextual Info: PHOTO IC 光電スイッチ用フォトIC S6841, S8119 光電スイッチ機能付のフォトIC 光電スイッチとして必要な機能を内蔵したフォトICです。LEDと共に使用し 透過型、 反射型の光電スイッチを容易に構成できます。

S6841

Abstract: S8119
Contextual Info: PHOTO IC Photo IC for optical switch S6841, S8119 Photo IC with optical switch functions S6841 and S8119 are specifically designed for optical switches. A transmission mode or reflection mode optical switch can be easily configured when used in combination with an LED.

S-8119

Contextual Info: PHOTO IC Photo IC for optical switch S6841, S8119 Photo IC with optical switch functions S6841 and S8119 are specifically designed for optical switches. A transmission mode or reflection mode optical switch can be easily configured when used in combination with an LED.

S10604

Abstract: S11059-01WT
Contextual Info: セレクションガイド 2015.1 フォトIC 受 光 部 と 信 号 処 理 回 路 を 内 蔵した 高 機 能 セ ン サ フォト IC フォトICは受光部と信号処理回路が1つのパッケージに組み込まれて、さまざまな機能をもつ受光素子です。

Selection guide

Abstract: Photo IC S10604 S11059-01WT
Contextual Info: Selection guide - March 2015 Photo IC Sophisticated sensors integrated with photosensitive element and signal processing circuit HAMAMATSU PHOTONICS K.K. Photo IC The photo IC is a light receiver element with various functions. It integrates a photosensitive element and a signal processing circuit into one package.

L9657

Abstract: S10604
Contextual Info: 2007 Vol.2 E x h i b i t i o n s NEWS 2007 Vol.2 NEWS Belgium / Denmark / France / Germany / Italy / Netherlands / North Europe & CIS / November Vision 2007 Stuttgart / Germany UKAEA (Oxford / UK) Productronica 2007 (Munich / Germany) 35th Scottish Microscopy Symposium

SI7788DP-T1-GE3 PowerPAK SO-8 VISHAY

Contextual Info: New Product Si7788DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0031 at VGS = 10 V 50 0.0041 at VGS = 4.5 V 50 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)

Contextual Info: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC PowerPAK SO-8 RoHS COMPLIANT • Low-Side MOSFET in Synchronous Buck dc-to-dc

Si7788DP

Contextual Info: New Product Si7788DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0031 at VGS = 10 V 50 0.0041 at VGS = 4.5 V 50 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)

SC-75

Abstract: SiB417DK
Contextual Info: New Product SiB417DK Vishay Siliconix P-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.052 at VGS = - 4.5 V - 9a 0.070 at VGS = - 2.5 V - 9a 0.093 at VGS = - 1.8 V - 4.0 0.130 at VGS = - 1.5 V - 2.0 0.222 at VGS = - 1.2 V

Contextual Info: New Product Si4108DY Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 75 0.0098 at VGS = 10 V 20.5 36 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS

SI3454CDV

Abstract: S-8119
Contextual Info: New Product Si3454CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.050 at VGS = 10 V 4.2 0.079 at VGS = 4.5 V 3.0 VDS (V) 30 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 2.6 RoHS APPLICATIONS COMPLIANT

Contextual Info: New Product SiB417DK Vishay Siliconix P-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.052 at VGS = - 4.5 V - 9a 0.070 at VGS = - 2.5 V - 9a 0.093 at VGS = - 1.8 V - 4.0 0.130 at VGS = - 1.5 V - 2.0 0.222 at VGS = - 1.2 V

58ar

Contextual Info: New Product SiB417EDK Vishay Siliconix P-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.058 at VGS = - 4.5 V - 9.0a 0.080 at VGS = - 2.5 V - 9.0a 0.100 at VGS = - 1.8 V - 4.0 0.130 at VGS = - 1.5 V - 2.0 0.250 at VGS = - 1.2 V

81198

Contextual Info: Si7980DP Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 0.022 at VGS = 10 V 0.025 at VGS = 4.5 V 0.015 at VGS = 10 V 0.019 at VGS = 4.5 V 20 Channel-2 ID (A)a, f 8.0 8.0 8.0 8.0 RDS(on) (Ω) 20

si7788

Contextual Info: New Product Si7788DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0031 at VGS = 10 V 50 0.0041 at VGS = 4.5 V 50 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)

SC-75

Abstract: SiB417DK S8119 S-81197-Rev SIB417DK-T1-GE3
Contextual Info: New Product SiB417DK Vishay Siliconix P-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.052 at VGS = - 4.5 V - 9a 0.070 at VGS = - 2.5 V - 9a 0.093 at VGS = - 1.8 V - 4.0 0.130 at VGS = - 1.5 V - 2.0 0.222 at VGS = - 1.2 V

Contextual Info: New Product SiB417DK Vishay Siliconix P-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.052 at VGS = - 4.5 V - 9a 0.070 at VGS = - 2.5 V - 9a 0.093 at VGS = - 1.8 V - 4.0 0.130 at VGS = - 1.5 V - 2.0 0.222 at VGS = - 1.2 V

Contextual Info: New Product Si7788DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0031 at VGS = 10 V 50 0.0041 at VGS = 4.5 V 50 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)

SI4108

Abstract: Si4108DY-T1-GE3 Si4108DY
Contextual Info: New Product Si4108DY Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 75 0.0098 at VGS = 10 V 20.5 36 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS

Midget screw lampholder

Abstract: UV Lamp krypton 387 LAMP GROOVED
Contextual Info: C h ic a g o M in ia t u r e W HERE INNOVATION CO M ES TO L IG H T In c a n d e s c e n t Lam p A p p lic a tio n In fo rm a tio n Introduction • m ow n Whenever miniature Tungsten filament lamps are used in a sys­ tem, their function is always important and often vital. However,