S8-A MARKING Search Results

Contextual Info: r j uTECHNOLOGY n ^ A ß _ Dual Low Noise, m Precision, JFET Input O p Amps F€ ATUR€S DCSCRIPTIOn • 100% Tested Low Voltage Noise 6nV/VfizMax ■ S8 Package Standard Pinout ■Voltage Gain 1.2 Million Min ■ Offset Voltage 1.5mVMax ■ Offset Voltage Drift

LT1114N

Abstract: lt1112 design the instrumentation amplifier with bridge LT1112
Contextual Info: t T L i n t A C _ LT1112/LT1114 TECHNOLOGY Dual/Quad Low Power Precision, Picoamp Input Op Amps F€flTUR€S D C S C R IP T IO n • S8 Package - Standard Pinout ■ Offset Voltage - Prime Grade: 60|iV Max ■ Offset Voltage-Low Cost Grade

Contextual Info: SJ S8 3 0 2 7 0 I REV I ECN I APP'd " 6431 0 .3 6 3 WHITE MARKING 0.040" HIGH CHARACTER .077 +.005 -.010 0 .3 2 2 0 .2 4 2 TEST REQUIREMENT TEST METHOD MIL-STD-1344 SUPERSEDED BY EIA 364 OPERATING TEMP. - 65° TO + 125° C N/A CONTACT RESISTANCE .020 OHMS MAXIMUM

Contextual Info: HEWLETT-PACKARD/ CNPNTS blE D • 4 4 4 7 S8 4 0 D 0 R 4 b 3 ATS m HEW LETT PACKARD 655 nm Precision Optical Reflective Sensor Technical Data HEDS-1500 Features • Focused Emitter and Detector in a Single Package • 655 nm Visible Emitter • 0.178 mm 0.007 Resolution

DIODE marking Sl

Abstract: s6 68a diode diode marking b2 b1391 diode MARKING A9 IC MARKING 27A 6 PIN MARKING 62Z diode MARKING b3 S6 68A 621 marking diode
Contextual Info: SURFACE P A K {"J x i — • M Type No. HRW0202A HRW0202B HRW0203A HRW0302A HRW05Û2A HRW0503A HRW0702A HRW0703A HSM83 HSM88AS HSM88ASR HSM88WA HSM88WK HSM1Q7S HSM109WK Markig SI 7 S18 S5 S11 S10 S6 S15 @4 04 S8 F7 C1 04 @4 02 C3 C7 01 06 C4 C5 05 02 05 S7

Contextual Info: r r u r m TECHNOLOGY _LT1169 Dual Low Noise, P ic o a m p e re Bias C urrent, JFET In p u t O p A m p F€RTUR€S DCSCRIPTIOn • Input Bias Current, W arm ed Up: 20pA Max ■ 100% Tested Low Voltage Noise: 8nV/Vflz Max ■ S8 and N8 Package Standard Pinout

LT111A

Contextual Info: / T u n _ LT1112/LT1114 TECHNOLOGY Dual/Quad Low Power Precision, Picoamp Input Op Amps e / \ B K A T U IK S D € S C R IP T IO n • S8 Package - Standard Pinout ■ Offset Voltage - Prime Grade: 60nV Max ■ Offset Voltage-Low Cost Grade Including Surface Mount Dual/Quad : 75^V Max

Contextual Info: ¡ÜÜ Omnimate Range - 3.50 mm Pitch 1|§ § Socket blocks BL 3.5/90 Socket blocks BL 3.5 LH* Socket blocks BL 3.5F Printed S8ÈÊ&&B Technical da ta VDE UL CSA T echnical d a ta VDE UL CSA Technical d a ta VDE UL CSA R a te d v o lta g e V 125* 300 300

Contextual Info: iß 19 T? L iim m fi3 TECHNOLOGY Dual Low Noise, Precision, JFET Input O p Am ps August 1993 D C S C M P T IO n F€ A T U R € S • 100% Tested Low Voltage Noise 6nV/VfizMax ■ S8 Package Standard Pinout ■ Voltage Gain ■ Offset Voltage ■ Offset Voltage Drift

a1385

Abstract: 6 dip, op -ic
Contextual Info: i T L i n C A B _ L T l 1 1 2 / L T l 1 1 4 TECHNOLOGY Dual/Quad Low Power Precision, Picoamp Input Op Amps F€ flTU R € S D € S C R IP T IO n • S8 Package - Standard Pinout ■ Offset Voltage - Prime Grade: 60jxV Max ■ Offset Voltage - Low Cost Grade

Contextual Info: SEMICONDUCTOR KDS128E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking 2. Marking 0 1 S8 1 2 3 No. Item Marking Description Device Mark S8 KDS128E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Index

LINEAR MARKING

Abstract: 1446 1446l 1446li
Contextual Info: SPECIFICATION NOTICE LTC1446/LTC1446L June 1997 The part marking for the SO-8 package of the LTC 1446/LTC1446L in the commercial temperature range of 0°C to 70°C is 1446 and 1446L as shown below. The part marking in the industrial range of – 40°C to 85°C is 1446I and 1446LI. For complete specifications, typical

marking s8 diode

Abstract: s8 marking RB751V-40 MARKING CODE S8
Contextual Info: RB751V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE PINNING Features • Small surface mounting type • Low reverse current and low forward voltage • High reliability DESCRIPTION PIN 1 Cathode 2 Anode 2 1 S8 Top View Marking Code: "S8" Simplified outline SOD-323 and symbol

sg3524 PWM dc to dc boost regulator

Abstract: apple ccfl inverter dc 12v sg3524 PWM GENERATOR with mosfet switching regulator 12v 3A 1.5A 48v regulator ultra low power mosfet fast switching sg3524 battery charger SG3524 application notes speed control 400V voltage regulator 6V sot-223 smt voltage regulators
Contextual Info: SURFACE MOUNT PRODUCTS Introduction Linear Technology Corporation LTC was founded in 1981 to address the growing demand for high performance and superior quality linear integrated circuits. Today, LTC has successfully established a leadership position by introducing and supplying leading edge products in each of the industry’s basic functional groups —

isolated converter using SG3524

Abstract: sg3524 battery charger apple ccfl inverter dc 12v S325 regulator Full-bridge SG3524 sg3524 PWM dc to dc boost regulator sg3524 PWM MOTOR mosfet Adjustable resistance ST-5 S83 marking 15 AMP ADJUSTABLE REGULATOR
Contextual Info: SURFACE MOUNT PRODUCTS Introduction Linear Technology Corporation LTC was founded in 1981 to address the growing demand for high performance and superior quality linear integrated circuits. Today, LTC has successfully established a leadership position by introducing and supplying leading edge products in

Tantalum N8

Abstract: 330uF NTP107M10TRD MARKING CODE j8 63VDC tantalum A8 10VDC 680uf A7 marking code
Contextual Info: Rev2 - April 2008 www.niccomp.com Technical Inquiries: tpmg@niccomp.com COMPONENT MARKING NTP SERIES - POLYMER CATHODE TANTALUM CHIP CAPACITORS ANODE + BAND; SILVER DATE CODE IDENTIFIER “x” = OCTOBER 2008 CAPACITANCE CODE ”N8” = 330uF VOLTAGE CODE “j” = 6.3VDC

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAT42WS/BAT43WS SOD-323 SCHOTTKY BARRIER DIODE FEATURES MARKING: BAT42WS S7 BAT43WS S8 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol

LTC1258

Abstract: LTC1258-5 LTC1258CMS8 LTC1258CMS8-3
Contextual Info: LTC1258 Series Micropower Low Dropout References U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 200mV Max Dropout at 10mA Output Current 4µA Typical Quiescent Current 0.15% Max Initial Accuracy S8 No Output Capacitor Required Output Sources 10mA, Sinks 2mA

s7 200

Abstract: BAT42W BAT42WS BAT43W BAT43WS
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAT42WS/BAT43WS SCHOTTKY DIODES SOD-323 FEATURES MARKING: BAT42WS S7 BAT43WS S8 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol BAT42WS/BAT43WS

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes BAT42W/BAT43W SOD-123 SCHOTTKY BARRIER DIODE FEATURES z Low Forward Voltage Drop z Fast Switching Time z Surface Mount Package Ideally Suited for Automatic Insertion MARKING:

lt 1258

Abstract: 0.1hz highpass filter MS8 PACKAGE LTC1258 LTC1258-5 LTC1258CMS8 LTC1258CMS8-3
Contextual Info: LTC1258 Series Micropower Low Dropout References U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 200mV Max Dropout at 10mA Output Current 4µA Typical Quiescent Current 0.15% Max Initial Accuracy S8 No Output Capacitor Required Output Sources 10mA, Sinks 2mA

BAT42WS

Abstract: BAT43WS
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAT42WS/BAT43WS SCHOTTKY DIODES SOD-323 + FEATURES - MARKING: BAT42WS S7 BAT43WS S8 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol

s7 200

Abstract: BAT42W BAT43W
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes BAT42W/BAT43W SCHOTTKY DIODES SOD-123 FEATURES MARKING: BAT42W S7 BAT43W S8 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol BAT42W/BAT43W

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAT42WS/BAT43WS SCHOTTKY DIODES SOD-323 + FEATURES - MARKING: BAT42WS S7 BAT43WS S8 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol