KDS128E Search Results

Contextual Info: SEMICONDUCTOR KDS128E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking 2. Marking 0 1 S8 1 2 3 No. Item Marking Description Device Mark S8 KDS128E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Index

Contextual Info: SEMICONDUCTOR KDS128E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE TENTATIVE B C 1 6 C 2 5 3 4 D A1 A B1 SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Maximum Peak Forward Current IFM 300 * mA Average Forward Current IO 100 * mA IFSM 2* A Power Dissipation

d3-d15

Abstract: KDS128E
Contextual Info: SEMICONDUCTOR KDS128E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. TENTATIVE FEATURES ・Low Forward Voltage : VF=0.92V Typ. . ・Fast Reverse Recovery Time : trr=1.6ns(Typ.). ・Small Total Capacitance : CT=2.2pF (Typ.).

Contextual Info: SEMICONDUCTOR KDS128E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. B FEATURES ・Low Forward Voltage : VF=0.92V Typ. . ・Fast Reverse Recovery Time : trr=1.6ns(Typ.). ・Small Total Capacitance : CT=2.2pF (Typ.).

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor