S7127 Search Results

9042-001

Contextual Info: S7127AM Semiconductor Bipolar Linear Integrated Circuit Description • As Control Circuit of Battery-Backed Memory • As Measure Against Erroneous Operations at Power On-Off • As Resetting Function for the CPU-Mounted Equipment - PC, Printer, VTR, Fax, C-TV etc.

cl100

Abstract: S7127SF marking t17
Contextual Info: S7127SF Semiconductor Bipolar Linear Integrated Circuit Description • As Control Circuit of Battery-Backed Memory • As Measure Against Erroneous Operations at Power On-Off • As Resetting Function for the CPU-Mounted Equipment - PC, Printer, VTR, Fax, C-TV etc.

9042

Abstract: S7127AM
Contextual Info: S7127AM Semiconductor Bipolar Linear Integrated Circuit Description • As Control Circuit of Battery-Backed Memory • As Measure Against Erroneous Operations at Power On-Off • As Resetting Function for the CPU-Mounted Equipment - PC, Printer, VTR, Fax, C-TV etc.

Contextual Info: FlashFlex51 MCU SST89E516RD2 / SST89E516RD SST89V516RD2 / SST89V516RD SST89E/V516RDx FlashFlex51 MCU Data Sheet FEATURES: • 8-bit 8051-Compatible Microcontroller MCU with Embedded SuperFlash Memory – Fully Software Compatible – Development Toolset Compatible

Si4662DY

Contextual Info: New Product Si4662DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 18.6 0.014 at VGS = 4.5 V 15.7 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 11 nC RoHS APPLICATIONS

CL100 transistor

Abstract: sot89 "voltage detecting" marking Voltage Detector SOT-89 marking S7 SOT-89 transistor cl100
Contextual Info: S71xxF 7 Semiconductor Standard Voltage Detector Description • The S71xx prevents the error of system from supply voltage below normal voltage level at the time the power on and instantaneous power off in systems. Features • Super low current consumption

SST36VF3203

Abstract: 555H BKX555H SST36VF3204 ba4932
Contextual Info: 32 Mbit x8/x16 Concurrent SuperFlash SST36VF3203 / SST36VF3204 SST36VF3201C / 1602C32Mb (x8/x16) Concurrent SuperFlash Advance Information FEATURES: • Organized as 2M x16 or 4M x8 • Dual Bank Architecture for Concurrent Read/Write Operation – 32 Mbit Bottom Sector Protection

gp1214

Abstract: sst 90 SST12LP14 SST12LP14-QVC SST12LP14-QVCE SST12LP14-QVC-K
Contextual Info: 2.4 GHz Power Amplifier SST12LP14 Preliminary Specifications SST12LP142.4 GHz Power Amplifier FEATURES: • • • • • • High Gain: – Typically 30 dB gain across 2.4~2.5 GHz over temperature 0°C to +80°C High linear output power: – >26.5 dBm P1dB

SST89E516RD

Abstract: SST89E516RD2 SST89V516RD SST89V516RD2
Contextual Info: FlashFlex51 MCU SST89E516RD2 / SST89E516RD SST89V516RD2 / SST89V516RD SST89E/V516RDx FlashFlex51 MCU Data Sheet FEATURES: • 8-bit 8051-Compatible Microcontroller MCU with Embedded SuperFlash Memory – Fully Software Compatible – Development Toolset Compatible

gp1214

Abstract: JEP95 SST12LP14 SST12LP14-QVC SST12LP14-QVCE SST12LP14-QVC-K
Contextual Info: 2.4 GHz Power Amplifier SST12LP14 Data Sheet SST12LP142.4 GHz Power Amplifier FEATURES: • • • • • • High Gain: – Typically 30 dB gain across 2.4~2.5 GHz over temperature 0°C to +80°C High linear output power: – >26.5 dBm P1dB – Meets 802.11g OFDM ACPR requirement up to

JEP95

Abstract: SST12LP15 SST12LP15-QVC SST12LP15-QVCE SST12LP15-QVC-K
Contextual Info: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15 Data Sheet SST-GP12152.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 35 dB gain across 2.4~2.5 GHz over temperature 0°C to +80°C High linear output power:

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

KSD 75

Abstract: CL100 transistor transistor cl100 S7142SF S7125SF S7127SF S7129SF S7131SF S7133SF S7136SF
Contextual Info: S71xxSF Semiconductor 7 Standard Voltage Detector Description • The S71xx prevents the error of system from supply voltage below normal voltage level at the time the power on and instantaneous power off in systems. Features • Super low current consumption

555H

Abstract: SST36VF1601E SST36VF1602E C0010
Contextual Info: 16 Mbit x8/x16 Concurrent SuperFlash SST36VF1601E / SST36VF1602E SST36VF1601E / 1602E16Mb (x8/x16) Concurrent SuperFlash Data Sheet FEATURES: • Organized as 1M x16 or 2M x8 • Dual Bank Architecture for Concurrent Read/Write Operation – 16 Mbit Bottom Sector Protection

Contextual Info: 16 Mbit x8/x16 Concurrent SuperFlash SST36VF1601E / SST36VF1602E SST36VF1601E / 1602E16Mb (x8/x16) Concurrent SuperFlash Advance Information FEATURES: • Organized as 1M x16 or 2M x8 • Dual Bank Architecture for Concurrent Read/Write Operation – 16 Mbit Bottom Sector Protection

SST25VF*B

Contextual Info: 16 Mbit SPI Serial Flash SST25VF016B SST25VF016B16Mb Serial Peripheral Interface SPI flash memory Preliminary Specifications FEATURES: • Single Voltage Read and Write Operations – 2.7-3.6V • Serial Interface Architecture – SPI Compatible: Mode 0 and Mode 3

555H

Abstract: SST36VF1601E SST36VF1602E
Contextual Info: 16 Mbit x8/x16 Concurrent SuperFlash SST36VF1601E / SST36VF1602E SST36VF1601E / 1602E16Mb (x8/x16) Concurrent SuperFlash Data Sheet FEATURES: • Organized as 1M x16 or 2M x8 • Dual Bank Architecture for Concurrent Read/Write Operation – 16 Mbit Bottom Sector Protection

SST89x5xxRDX* SPI

Abstract: SST89E516RD-40-C-QIF SST89x516RDx SST89V516RD2 26Cf 00XXX000B
Contextual Info: Not recommended for new designs. Contact Microchip Sales for microcontroller design options. FlashFlex MCU SST89E516RD2 / SST89E516RD SST89V516RD2 / SST89V516RD A Microchip Technology Company Data Sheet The SST89E516RDx and SST89V516RDx are members of the FlashFlex family

SST12LP15

Abstract: rf power amplifier transistor with s-parameters SST12LP15-QVC SST12LP15-QVCE SST12LP15-QVC-K
Contextual Info: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15 Preliminary Specifications SST-GP12152.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 35 dB gain across 2.4~2.5 GHz over temperature 0°C to +80°C High linear output power:

si4409

Abstract: SI4409DY-T1-E3
Contextual Info: New Product Si4409DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 rDS(on) (Ω) ID (A)a 1.2 at VGS = - 10 V - 1.3 1.3 at VGS = - 6 V - 1.2 • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ) RoHS 4.8 nC COMPLIANT

16WQFN

Abstract: JEP95 SST11LP12 SST11LP12-QCF SST11LP12-QCF-K GP1112
Contextual Info: 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 Data Sheet SST1LP124.9-5.8 GHz High-Linearity Power Amplifier FEATURES: • High gain • High linear output power: – Meets 802.11a OFDM Spectrum Mask requirement up to 24 dBm over the entire band – Added EVM <4% up to 21 dBm for

89E516RD2

Abstract: SST89E516RD2-40-I-TQJE E516RD2
Contextual Info: FlashFlex MCU SST89E516RD2 / SST89E516RD SST89V516RD2 / SST89V516RD Data Sheet The SST89E516RDx and SST89V516RDx are members of the FlashFlex family of 8-bit microcontroller products designed and manufactured with SST’s patented and proprietary SuperFlash CMOS semiconductor process technology. The splitgate cell design and thick-oxide tunneling injector offer significant cost and reliability benefits for SST’s customers. The devices use the 8051 instruction set and

Contextual Info: Not recommended for new designs. Please use SST12LP15B 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15 A Microchip Technology Company Not Recommended for New Designs The SST12LP15 is a high-power, high-gain power amplifier based on the highlyreliable InGaP/GaAs HBT technology. Easily configured for high-power, high-efficiency applications with superb power-added efficiency, it typically provides 35 dB

16-vqfn-3x3-QVC-2

Abstract: SST12LP15B microchip at 2.45 GHz gp1215
Contextual Info: Not recommended for new designs. Please use SST12LP15B 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15 A Microchip Technology Company Not Recommended for New Designs The SST12LP15 is a high-power, high-gain power amplifier based on the highlyreliable InGaP/GaAs HBT technology. Easily configured for high-power, high-efficiency applications with superb power-added efficiency, it typically provides 35 dB