S5141 Search Results

51412

Abstract: Si7116DN
Contextual Info: Si7116DN Vishay Siliconix N-Channel 40-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.0078 @ VGS = 10 V 16.4 0.010 @ VGS = 4.5 V 14.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low

51412

Abstract: Si7114DN Si7114DN-T1
Contextual Info: Si7114DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 18.3 0.010 @ VGS = 4.5 V 15.9 D TrenchFETr Gen II Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low

Contextual Info: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 • TrenchFET Power MOSFETS: 2.5-V Rated Pb-free Available RoHS* COMPLIANT SOT-363 SC-70 (6-LEADS)

Contextual Info: Si7110DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0053 @ VGS = 10 V 21.1 0.0078 @ VGS = 4.5 V 17.4 D TrenchFETr Gen II Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low

Contextual Info: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • TrenchFET Power MOSFETS: 2.5 V Rated Pb-free Available RoHS* COMPLIANT SOT-363 SC-70 (6-LEADS)

SI7110DN-T1-E3

Abstract: Si7110DN 51413
Contextual Info: Si7110DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0053 @ VGS = 10 V 21.1 0.0078 @ VGS = 4.5 V 17.4 D TrenchFETr Gen II Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low

Si7108DN

Contextual Info: Si7108DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0049 @ VGS = 10 V 22 0.0061 @ VGS = 4.5 V 19.7 Qg (Typ) 20 D TrenchFETr Gen II Power MOSFET for Ultra Low On-Resistance D New Low Thermal Resistance PowerPAKr

KAV60

Abstract: conn pwr 2 PCB footprint LS-5141P compal HT-297DQ-GQ LS5141 Compal Electronics s5141 100P_0402_50V8J 4P5X
Contextual Info: 5 4 3 2 1 COMPAL CONFIDENTIAL DA2@ DA20000FM10 D LS-5141P REV1 PWR/B H2 H_4P5x2P5N ON/OFF LED LEFT 1 +5VALW +5VS AMB (GREEN) To MB Conn. C +5VALW +5VS +3VALW 1 ON/OFF Button 1 C R1 510_0402_5% R2 200_0402_5% ON/OFFBTN# 2 2 3 2 PWR_SUSP_LED# 4 GOLD_FINGER

Si1032X

Abstract: 51416R
Contextual Info: SPICE Device Model Si1032X Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si7114DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 18.3 0.010 @ VGS = 4.5 V 15.9 D TrenchFETr Gen II Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low

si1902dl

Contextual Info: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 • TrenchFET Power MOSFETS: 2.5-V Rated Pb-free Available RoHS* COMPLIANT SOT-363 SC-70 (6-LEADS)

Contextual Info: Si7106DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0062 @ VGS = 4.5 V 19.5 0.0098 @ VGS = 2.5 V 15.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low

73142

Abstract: Si7106DN-T1-E3
Contextual Info: Si7106DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0062 @ VGS = 4.5 V 19.5 0.0098 @ VGS = 2.5 V 15.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low

SI1902DL-T1-E3

Abstract: Si1902DL Si1902DL-T1
Contextual Info: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • TrenchFET Power MOSFETS: 2.5 V Rated Pb-free Available RoHS* COMPLIANT SOT-363 SC-70 (6-LEADS)

Contextual Info: Si7112DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 17.8 0.0082 @ VGS = 4.5 V 17.0 COMPLIANT Available D Synchronous Rectification S D 3.30 mm 1 RoHS APPLICATIONS PowerPAK 1212-8

Contextual Info: Si7112DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 17.8 0.0082 @ VGS = 4.5 V 17.0 COMPLIANT Available D Synchronous Rectification S D 3.30 mm 1 RoHS APPLICATIONS PowerPAK 1212-8

Si4816DY-T1-E3

Contextual Info: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.013 @ VGS = 10 V 10 0.0185 @ VGS = 4.5 V 8.6

Contextual Info: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.013 @ VGS = 10 V 10 0.0185 @ VGS = 4.5 V 8.6

51414

Contextual Info: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.013 @ VGS = 10 V 10 0.0185 @ VGS = 4.5 V 8.6

Si1902DL

Abstract: Si1902DL-T1 Si1902DL-T1-E3
Contextual Info: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • TrenchFET Power MOSFETS: 2.5 V Rated Pb-free Available RoHS* COMPLIANT SOT-363 SC-70 (6-LEADS)

siemens im 304

Abstract: AIL 4M 514100BJ HYB5141Q0BJ HYB514400BJ SIEMENS marking siemens 575 HVB marking Polystyrol capacitors
Contextual Info: H y' b 5 i4 iu u B J /» J t_ -5G/-6G/-7G 4 J A J AAJ . J n A P n!a n _ _ _ _ _ _ _ _ _ _ i - n » l f l 4 i y4 JU4 x i - dic u yn am ic i-laiyi I l i l i n I"-J jft X i I il - i rlidi r r t i1 i r ? A n T tJ 3 I^^UUDJ/DJL. -3U/-OUf-iU _ i_ nrtJit.t *i riAO

Contextual Info: R 1D £änSL AS-S 14 ° /A ^ S 1 « E J o iM O l^ O i Fam ily H,gl1 £ & < 2 2 FEATURES GENERAL DESCRIPTION • Super fast break befqre jn a k e switching ton 80ns typ^ tofi'^Sns typ S P S T switches • Power supply currents less than 1juA • “OFF” leakages less than lOOpA @ 25° C

Contextual Info: Si7108DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0049 @ VGS = 10 V 22 0.0061 @ VGS = 4.5 V 19.7 Qg (Typ) 20 D TrenchFETr Gen II Power MOSFET for Ultra Low On-Resistance D New Low Thermal Resistance PowerPAKr