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    TPD1S514-1YZR
    Texas Instruments USB Charger Overvoltage Surge and ESD Protection 12-DSBGA -40 to 85 Visit Texas Instruments Buy
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    Cinch Connectivity Solutions MS-5-141

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    S5141 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    51412

    Abstract: Si7116DN
    Contextual Info: Si7116DN Vishay Siliconix N-Channel 40-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.0078 @ VGS = 10 V 16.4 0.010 @ VGS = 4.5 V 14.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low


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    si7116dn07-mmsi7116dn-t1--e308-apr-05+151412 PDF

    51412

    Abstract: Si7114DN Si7114DN-T1
    Contextual Info: Si7114DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 18.3 0.010 @ VGS = 4.5 V 15.9 D TrenchFETr Gen II Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low


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    si7114dn07-mmsi7114dn-t1si7114dn-t1--e3+208-apr-0551412 PDF

    Contextual Info: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 • TrenchFET Power MOSFETS: 2.5-V Rated Pb-free Available RoHS* COMPLIANT SOT-363 SC-70 (6-LEADS)


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    si1902dlot-363sc-7008-apr-05 PDF

    Contextual Info: Si7110DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0053 @ VGS = 10 V 21.1 0.0078 @ VGS = 4.5 V 17.4 D TrenchFETr Gen II Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low


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    si7110dn07-mmsi7110dn-t1--e3current7110dn+2s-51413--rev01-aug-05 PDF

    Contextual Info: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • TrenchFET Power MOSFETS: 2.5 V Rated Pb-free Available RoHS* COMPLIANT SOT-363 SC-70 (6-LEADS)


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    si1902dlot-363sc-70si1902dl-t1+2si1902dl-t1-e308-apr-05 PDF

    SI7110DN-T1-E3

    Abstract: Si7110DN 51413
    Contextual Info: Si7110DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0053 @ VGS = 10 V 21.1 0.0078 @ VGS = 4.5 V 17.4 D TrenchFETr Gen II Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low


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    si7110dn07-mmsi7110dn-t1--e308-apr-05+2si7110dn-t1-e351413 PDF

    Si7108DN

    Contextual Info: Si7108DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0049 @ VGS = 10 V 22 0.0061 @ VGS = 4.5 V 19.7 Qg (Typ) 20 D TrenchFETr Gen II Power MOSFET for Ultra Low On-Resistance D New Low Thermal Resistance PowerPAKr


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    si7108dn07-mmsi7108dn-t1--e308-apr-05 PDF

    KAV60

    Abstract: conn pwr 2 PCB footprint LS-5141P compal HT-297DQ-GQ LS5141 Compal Electronics s5141 100P_0402_50V8J 4P5X
    Contextual Info: 5 4 3 2 1 COMPAL CONFIDENTIAL DA2@ DA20000FM10 D LS-5141P REV1 PWR/B H2 H_4P5x2P5N ON/OFF LED LEFT 1 +5VALW +5VS AMB (GREEN) To MB Conn. C +5VALW +5VS +3VALW 1 ON/OFF Button 1 C R1 510_0402_5% R2 200_0402_5% ON/OFFBTN# 2 2 3 2 PWR_SUSP_LED# 4 GOLD_FINGER


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    kav60ls-5141pda20000fm10ht-297dq-gq+10skrbaae010psot24cs5141405n0lconn pwr 2 pcb footprintcompalls5141compal electronics100p_0402_50v8j4p5x PDF

    Si1032X

    Abstract: 51416R
    Contextual Info: SPICE Device Model Si1032X Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    si1032x18-jul-0851416r PDF

    Contextual Info: Si7114DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 18.3 0.010 @ VGS = 4.5 V 15.9 D TrenchFETr Gen II Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low


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    si7114dn07-mmsi7114dn-t1si7114dn-t1--e3+37114dns-51412--rev01-aug-05 PDF

    si1902dl

    Contextual Info: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 • TrenchFET Power MOSFETS: 2.5-V Rated Pb-free Available RoHS* COMPLIANT SOT-363 SC-70 (6-LEADS)


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    si1902dlot-363sc-70s-51415+101-aug-05 PDF

    Contextual Info: Si7106DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0062 @ VGS = 4.5 V 19.5 0.0098 @ VGS = 2.5 V 15.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low


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    si7106dn07-mmsi7106dn-t1--e3pulsedi7106dn+2s-51413--rev01-aug-05 PDF

    73142

    Abstract: Si7106DN-T1-E3
    Contextual Info: Si7106DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0062 @ VGS = 4.5 V 19.5 0.0098 @ VGS = 2.5 V 15.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low


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    si7106dn07-mmsi7106dn-t1--e308-apr-05+273142si7106dn-t1-e3 PDF

    SI1902DL-T1-E3

    Abstract: Si1902DL Si1902DL-T1
    Contextual Info: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • TrenchFET Power MOSFETS: 2.5 V Rated Pb-free Available RoHS* COMPLIANT SOT-363 SC-70 (6-LEADS)


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    si1902dlot-363sc-70si1902dl-t1+2si1902dl-t1-e308-apr-05 PDF

    Contextual Info: Si7112DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 17.8 0.0082 @ VGS = 4.5 V 17.0 COMPLIANT Available D Synchronous Rectification S D 3.30 mm 1 RoHS APPLICATIONS PowerPAK 1212-8


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    si7112dn07-mmsi7112dn-t1si7112dn-t1--e3+108-apr-05 PDF

    Contextual Info: Si7112DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 17.8 0.0082 @ VGS = 4.5 V 17.0 COMPLIANT Available D Synchronous Rectification S D 3.30 mm 1 RoHS APPLICATIONS PowerPAK 1212-8


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    si7112dn07-mmsi7112dn-t1si7112dn-t1--e3+3drain7112dns-51413--rev01-aug-05 PDF

    Si4816DY-T1-E3

    Contextual Info: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.013 @ VGS = 10 V 10 0.0185 @ VGS = 4.5 V 8.6


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    si4816dysi4816dy-t1si4816dy--e3si4816dy-t1--e3+3s-51414--rev01-aug-05si4816dy-t1-e3 PDF

    Contextual Info: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.013 @ VGS = 10 V 10 0.0185 @ VGS = 4.5 V 8.6


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    si4816dysi4816dy-t1si4816dy--e3si4816dy-t1--e3+118-jul-08 PDF

    51414

    Contextual Info: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.013 @ VGS = 10 V 10 0.0185 @ VGS = 4.5 V 8.6


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    si4816dysi4816dy-t1si4816dy--e3si4816dy-t1--e3+208-apr-0551414 PDF

    Si1902DL

    Abstract: Si1902DL-T1 Si1902DL-T1-E3
    Contextual Info: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • TrenchFET Power MOSFETS: 2.5 V Rated Pb-free Available RoHS* COMPLIANT SOT-363 SC-70 (6-LEADS)


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    si1902dlot-363sc-70si1902dl-t1+2si1902dl-t1-e318-jul-08 PDF

    siemens im 304

    Abstract: AIL 4M 514100BJ HYB5141Q0BJ HYB514400BJ SIEMENS marking siemens 575 HVB marking Polystyrol capacitors
    Contextual Info: H y' b 5 i4 iu u B J /» J t_ -5G/-6G/-7G 4 J A J AAJ . J n A P n!a n _ _ _ _ _ _ _ _ _ _ i - n » l f l 4 i y4 JU4 x i - dic u yn am ic i-laiyi I l i l i n I"-J jft X i I il - i rlidi r r t i1 i r ? A n T tJ 3 I^^UUDJ/DJL. -3U/-OUf-iU _ i_ nrtJit.t *i riAO


    OCR Scan
    -so/-60/-70514400bjhyb5141q0bjhyb514400bj+9sqj2s/20soj26/20siemens im 304ail 4m514100bjsiemens markingsiemens 575hvb markingpolystyrol capacitors PDF

    Contextual Info: R 1D £änSL AS-S 14 ° /A ^ S 1 « E J o iM O l^ O i Fam ily H,gl1 £ & < 2 2 FEATURES GENERAL DESCRIPTION • Super fast break befqre jn a k e switching ton 80ns typ^ tofi'^Sns typ S P S T switches • Power supply currents less than 1juA • “OFF” leakages less than lOOpA @ 25° C


    OCR Scan
    as-5140100pa PDF

    Contextual Info: Si7108DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0049 @ VGS = 10 V 22 0.0061 @ VGS = 4.5 V 19.7 Qg (Typ) 20 D TrenchFETr Gen II Power MOSFET for Ultra Low On-Resistance D New Low Thermal Resistance PowerPAKr


    Original
    si7108dn07-mmsi7108dn-t1--e3drain-sou7108dn+2s-51413--rev01-aug-05 PDF