S5141 Search Results
S5141 Result Highlights (1)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TPD1S514-1YZR | Texas Instruments | USB Charger Overvoltage Surge and ESD Protection 12-DSBGA -40 to 85 |
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S5141 Price and Stock
Cinch Connectivity Solutions MS-5-141Connector Accessories Marker Strip Straight |
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MS-5-141 |
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MS-5-141 | Bulk | 990 | 1 |
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| MS-5-141 | Bulk | 75 |
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MS-5-141 | 10 |
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Samtec Inc ZW-04-10-T-S-514-163 |
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ZW-04-10-T-S-514-163 |
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Samtec Inc FFSD-06-S-51.41-01-N |
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FFSD-06-S-51.41-01-N |
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Bel Fuse MS-5-141- Bulk (Alt: 29F827) |
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MS-5-141 | Bulk | 1 |
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onsemi CS51414EDR8G- Tape and Reel (Alt: CS51414EDR8G) |
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CS51414EDR8G | Tape & Reel | 2,500 |
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CS51414EDR8G | 9,845 |
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CS51414EDR8G | Tape & Reel | 7,588 | 100 |
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| CS51414EDR8G | Cut Tape | 7,588 | 1 |
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CS51414EDR8G | 410 |
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CS51414EDR8G | 2,350 | 1 |
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CS51414EDR8G | 2,056 | 1 |
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CS51414EDR8G | 50 Weeks | 2,500 |
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CS51414EDR8G | 23 Weeks | 2,500 |
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CS51414EDR8G | 24 Weeks | 2,500 |
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CS51414EDR8G | 400 |
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CS51414EDR8G | 11 | 1 |
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CS51414EDR8G | 7,100 |
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S5141 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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51412
Abstract: Si7116DN
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si7116dn07-mmsi7116dn-t1--e308-apr-05+1 | |
51412
Abstract: Si7114DN Si7114DN-T1
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si7114dn07-mmsi7114dn-t1si7114dn-t1--e3+2 | |
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Contextual Info: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 • TrenchFET Power MOSFETS: 2.5-V Rated Pb-free Available RoHS* COMPLIANT SOT-363 SC-70 (6-LEADS) |
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si1902dlot-363sc-7008-apr-05 | |
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Contextual Info: Si7110DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0053 @ VGS = 10 V 21.1 0.0078 @ VGS = 4.5 V 17.4 D TrenchFETr Gen II Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low |
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si7110dn07-mmsi7110dn-t1--e3current7110dn+2 | |
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Contextual Info: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • TrenchFET Power MOSFETS: 2.5 V Rated Pb-free Available RoHS* COMPLIANT SOT-363 SC-70 (6-LEADS) |
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si1902dlot-363sc-70si1902dl-t1+2 | |
SI7110DN-T1-E3
Abstract: Si7110DN 51413
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si7110dn07-mmsi7110dn-t1--e308-apr-05+2 | |
Si7108DNContextual Info: Si7108DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0049 @ VGS = 10 V 22 0.0061 @ VGS = 4.5 V 19.7 Qg (Typ) 20 D TrenchFETr Gen II Power MOSFET for Ultra Low On-Resistance D New Low Thermal Resistance PowerPAKr |
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si7108dn07-mmsi7108dn-t1--e308-apr-05 | |
KAV60
Abstract: conn pwr 2 PCB footprint LS-5141P compal HT-297DQ-GQ LS5141 Compal Electronics s5141 100P_0402_50V8J 4P5X
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kav60ls-5141pda20000fm10ht-297dq-gq+10 | |
Si1032X
Abstract: 51416R
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si1032x18-jul-0851416r | |
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Contextual Info: Si7114DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 18.3 0.010 @ VGS = 4.5 V 15.9 D TrenchFETr Gen II Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low |
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si7114dn07-mmsi7114dn-t1si7114dn-t1--e3+3 | |
si1902dlContextual Info: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 • TrenchFET Power MOSFETS: 2.5-V Rated Pb-free Available RoHS* COMPLIANT SOT-363 SC-70 (6-LEADS) |
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si1902dlot-363sc-70s-51415+1 | |
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Contextual Info: Si7106DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0062 @ VGS = 4.5 V 19.5 0.0098 @ VGS = 2.5 V 15.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low |
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si7106dn07-mmsi7106dn-t1--e3pulsedi7106dn+2 | |
73142
Abstract: Si7106DN-T1-E3
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si7106dn07-mmsi7106dn-t1--e308-apr-05+2 | |
SI1902DL-T1-E3
Abstract: Si1902DL Si1902DL-T1
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si1902dlot-363sc-70si1902dl-t1+2 | |
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Contextual Info: Si7112DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 17.8 0.0082 @ VGS = 4.5 V 17.0 COMPLIANT Available D Synchronous Rectification S D 3.30 mm 1 RoHS APPLICATIONS PowerPAK 1212-8 |
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si7112dn07-mmsi7112dn-t1si7112dn-t1--e3+1 | |
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Contextual Info: Si7112DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 17.8 0.0082 @ VGS = 4.5 V 17.0 COMPLIANT Available D Synchronous Rectification S D 3.30 mm 1 RoHS APPLICATIONS PowerPAK 1212-8 |
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si7112dn07-mmsi7112dn-t1si7112dn-t1--e3+3 | |
Si4816DY-T1-E3Contextual Info: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.013 @ VGS = 10 V 10 0.0185 @ VGS = 4.5 V 8.6 |
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si4816dysi4816dy-t1si4816dy--e3si4816dy-t1--e3+3 | |
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Contextual Info: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.013 @ VGS = 10 V 10 0.0185 @ VGS = 4.5 V 8.6 |
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si4816dysi4816dy-t1si4816dy--e3si4816dy-t1--e3+1 | |
51414Contextual Info: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.013 @ VGS = 10 V 10 0.0185 @ VGS = 4.5 V 8.6 |
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si4816dysi4816dy-t1si4816dy--e3si4816dy-t1--e3+2 | |
Si1902DL
Abstract: Si1902DL-T1 Si1902DL-T1-E3
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si1902dlot-363sc-70si1902dl-t1+2 | |
siemens im 304
Abstract: AIL 4M 514100BJ HYB5141Q0BJ HYB514400BJ SIEMENS marking siemens 575 HVB marking Polystyrol capacitors
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OCR Scan |
-so/-60/-70514400bjhyb5141q0bjhyb514400bj+9 | |
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Contextual Info: R 1D £änSL AS-S 14 ° /A ^ S 1 « E J o iM O l^ O i Fam ily H,gl1 £ & < 2 2 FEATURES GENERAL DESCRIPTION • Super fast break befqre jn a k e switching ton 80ns typ^ tofi'^Sns typ S P S T switches • Power supply currents less than 1juA • “OFF” leakages less than lOOpA @ 25° C |
OCR Scan |
as-5140100pa | |
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Contextual Info: Si7108DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0049 @ VGS = 10 V 22 0.0061 @ VGS = 4.5 V 19.7 Qg (Typ) 20 D TrenchFETr Gen II Power MOSFET for Ultra Low On-Resistance D New Low Thermal Resistance PowerPAKr |
Original |
si7108dn07-mmsi7108dn-t1--e3drain-sou7108dn+2 | |