S5028 Search Results

EC2 WS-501

Abstract: WS-1080 ws353 WS-1070 WS-2028 WS-516 WS-3507 WS-3510 WS-3570 WS-20130
Contextual Info: lowprofile Wee SIP LUMPED CONSTANT SIVE DELAY LINE J # # # # # # Analog input and output D elays stable and precise 3-pin Wee S IP package .1 8 0 high Available in delays from 1ns to 2 5 0 n s Precise, fixed delay Available in im pedances of 5 0 , 1 0 0 , 2 0 0 ,

EWS 1500-48

Abstract: EWS600-5 EWS300-24 EWS600-24 instruction manual EWS300-24 instruction manual ews600 EWS600-24 EWS300-48 instruction manual EWS600-48 EWS100-15
Contextual Info: EWS-SERIES IAMBOAA DENSEI-LAMBDA Single output 15W ~ 1500W Unit Type Power Supply • Model name EWS 15-5r | N am e I Nominal output voltage of series Output power ■ Features • C€ m arking • Low V oltage Directive 74 models, 15 ~ 1500W • EWS1S EWS25 EWS50

BD607

Abstract: BDY17 sd1536-1 mj2940 motorola RCA1C07 bd608
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on fT tON r hFE ICBO (CE)set Toper Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) Max (°C) 275m 275m 275m 140 140 140 140 140 140 PD Package Style D vices 20 Watts or More, (Cont'd)

Contextual Info: 2.76±0.3 A-A B-B ?8.75±0.4 a NOTES * ° Uq]"n^ $xJP I 0.3) M A T E R I A L : C O P P E R A L L O Y ( +=0.3) * : i t£f f l ^ ' i ' + 2 . 0 * m MIN. i!lT ± ft 1.0* m MIN. P L A T I N G : T I N - L E A D 2 . 0 * m MIN. O V E R C O P P E R l .0 * m MIN.

Contextual Info: Si7302DN New Product Vishay Siliconix N-Channel 220-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.320 @ VGS = 10 V 8.4 0.340 @ VGS = 6 V 8.2 VDS (V) 220 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) APPLICATIONS 9 1 nC 9.1 Product Is

SUD23N06-31L

Abstract: 72145
Contextual Info: SUD23N06-31L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.031 @ VGS = 10 V 23 0.045 @ VGS = 4.5 V 19.5 VDS (V) 60 D TrenchFETr Power MOSFET D 175_C Junction Temperature Pb-free Available APPLICATIONS

SUD50N06-09L-E3

Abstract: 72004 SUD50N06-09L
Contextual Info: SUD50N06-09L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY (A)a D TrenchFETr Power MOSFET D 175_C Junction Temperature 0.0093 @ VGS = 10 V 50 APPLICATIONS 0.0122 @ VGS = 4.5 V 50 D Automotive − ABS − Motor Drives

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

SUD40N06-25L-E3

Abstract: SUD40N06-25L
Contextual Info: SUD40N06-25L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A)a 0.022 @ VGS = 10 V 30 0.025 @ VGS = 4.5 V 30 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested

cd5918

Abstract: CM80-28R S175-28 BM80-28 CD2089 CD1979 a25-28 C2M50-28 CD2904 S80-12
Contextual Info: The many parts of power TABLE A HF 2-30 MHz Device Freq. MHz CTC14 CTC15 S10-12 S50-12 S80-12 S100-12 S10-28 S50-28 S100-28 S 175*28 S 15-50 S100-50 S 175-50 30 30 30 30 30 30 30 30 30 30 30 30 30 Device Freq. (MHz) A3-28 A25-28 A70-28 B3-28 B12-28 B25-28

71087

Abstract: SUD15N06-90L
Contextual Info: SUD15N06-90L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V 15 0.090 @ VGS = 4.5 V 14 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature Pb-free Available

SUD23N06-31L

Contextual Info: SUD23N06-31L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.031 @ VGS = 10 V 23 0.045 @ VGS = 4.5 V 19.5 VDS (V) 60 D TrenchFETr Power MOSFET D 175_C Junction Temperature Pb-free Available APPLICATIONS

S-5028

Abstract: S-50-28 MP transistor
Contextual Info: ASI S50-28/MP NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI S50-28/MP is Designed for Class AB or C, Common Emitter Linear HF Communications Applications. PACKAGE STYLE .500" 4L FLG FEATURES INCLUDE: • hFE Matching High Power Gain Emitter Ballasting

BY1-1F

Abstract: A15-12 A1512 S175-50 BAM40 BY1-1 BY17 S100-12 S100-28 S15-28
Contextual Info: BH AR AT ELEK/SEP1IC0ND DI 47E D • 1 4 3 5 3 ^ 0 OO DD Ol ? 375 ■ BELI T " 3 3 - Ô / RF DEVICES H.F. 2 -3 0 MHz Type Polarity S15-28 S30-28 2N5070 S50-28 S100-28 S15-12* * S30-12*y S50-12* S100-12* S1 75-28* * S1 75-50 A’ * NPN NPN NPN NPN NPN NPN

S5007

Abstract: S5008 S5006 WS-518 S-5028 WS353 WS-3522 s20230 S10120 S3505
Contextual Info: lowprofile Wee SIP LUMPED CONSTANT PASSIVE DELAY LINE J # Analog input and output # Delays stable and precise use in providing the required delay timing functions necessary in radar, computer, communication, testing and instrument applica­ tions. # 3-pin Wee SIP package .1 8 0 high

HF Amplifier 300w

Abstract: S15-28 S50-28 S50-28-2 S50-28-3 hf amplifier 600 watts Scans-00115677
Contextual Info: 0182998 ACRI AN 97n INC m is ? n iD lf lS T lñ 17 ~T~~~ 3 0001132 " T • . tSSHiMKIilBIVaillSanV!! GENERAL S 50-28 D E S C R IP T IO N The S50-28 is especifically designed for HF linear applications. Its ruggedness and safe operating area make it ideal for forward

SUD15N06-90L

Contextual Info: SUD15N06-90L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V 15 0.090 @ VGS = 4.5 V 14 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature Pb-free Available

Contextual Info: SUD40N06-25L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A)a 0.022 @ VGS = 10 V 30 0.025 @ VGS = 4.5 V 30 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested

SUD15N06-90L

Contextual Info: SUD15N06-90L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V 15 0.090 @ VGS = 4.5 V 14 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature Pb-free Available

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40

Contextual Info: SUD50N06-09L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY (A)a D TrenchFETr Power MOSFET D 175_C Junction Temperature 0.0093 @ VGS = 10 V 50 APPLICATIONS 0.0122 @ VGS = 4.5 V 50 D Automotive − ABS − Motor Drives

S50-28

Abstract: S-50 "RF Power Transistor" "RF Power"
Contextual Info: ASI S50-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI S50-28 is Designed for Class AB or C, Common Emitter Linear HF Communications Applications. PACKAGE STYLE .500" 4L FLG FEATURES INCLUDE: • High Power Gain • Emitter Ballasting MAXIMUM RATINGS