72004 Search Results

SN62

Contextual Info: FUTURE PRODUCTS AVAILABLE 4TH QTR 73 S N 62004, S N 72004 . . . J F E T -IN P U T O P E R A T IO N A L A M P L IF IE R S key features • High slew rate . . . 15 V/fjs typical • High input impedance • Internal frequency compensation • Short-circuit output current limited

Contextual Info: Product SPECs Inquiry for Part Number: VE-720042B DCS SPECs Header Data Product ID: VE-720042B Item Family: FTMICRO Item Type: FT-DCDC Description: T 180/450/270 28v/ 2.6A Business Unit: VICOR Rev Chip: FC NPI Phase: 4 SPEC Type: Default Effective Date: Dec 3, 2013 2:19:31 PM

bfc2 419 43903

Abstract: 41103 43903 bfc2 417 41304 43902 78204 MKP 419
Contextual Info: MKP 416 to 420 Vishay BCcomponents Metallized Polypropylene Film Capacitors MKP Radial Potted Type FEATURES 168x12 halfpage 5, 10 and 15 mm lead pitch. Supplied loose in box, in ammopack and taped on reel. Intermediate values are available of the E96 series

APT8043BLL

Abstract: APT8043SLL
Contextual Info: APT8043BLL APT8043SLL 800V POWER MOS 7 R MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

ci 740

Abstract: 1C45 DH744
Contextual Info: SILICON TUNING VARACTORS This series o f high Q epi-junction m icrow ave tuning varactors 45 V incorporates a passivated mesa tech n olog y. It is well suited for fre q u e n cy tuning a pp lica tio ns up to X band. CHIP AND PACKAGED DIODES CHIP OIODES TUNING RATIO

APT8052BFLL

Abstract: APT8052SFLL
Contextual Info: APT8052BFLL APT8052SFLL 800V 15A POWER MOS 7 R FREDFET 0.520Ω BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT30M30B2LL

Abstract: APT30M30LLL
Contextual Info: APT30M30B2LL APT30M30LLL 300V 100A 0.030Ω POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

MKP 419

Contextual Info: MKP 416 to 420 Vishay BCcomponents Metallized Polypropylene Film Capacitors MKP Radial Potted Type FEATURES 168x12 halfpage 5, 10 and 15 mm lead pitch. Supplied loose in box, in ammopack and taped on reel. Intermediate values are available of the E96 series

75604

Abstract: MKP 419
Contextual Info: MKP 416 to 420 Vishay BCcomponents Metallized Polypropylene Film Capacitors MKP Radial Potted Type FEATURES 168x12 halfpage 5, 10 and 15 mm lead pitch. Supplied loose in box, in ammopack and taped on reel. Intermediate values are available of the E96 series

DM marking code

Abstract: DDR200 DDR266 DDR333 W3EG64255S-JD3
Contextual Info: White Electronic Designs W3EG64255S-JD3 ADVANCED* 2GB – 2x128Mx64 DDR SDRAM REGISTERED, w/PLL FEATURES DESCRIPTION Double-data-rate architecture The W3EG64255S is a 2x128Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of sixteen 256Mx4

APT60M75JVFR

Contextual Info: APT60M75JVFR 600V Ω 0.075Ω 62A POWER MOS V FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT8043BFLL APT8043SFLL 20A 0.430Ω 800V POWER MOS 7 R FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

diode 88A

Abstract: 88a diode and/kvp 88a
Contextual Info: APT30M30JFLL 300V POWER MOS 7 R 0.030Ω 88A FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

2GB2

Contextual Info: White Electronic Designs W3EG64255S-JD3 ADVANCED* 2GB-256Mx64 DDR SDRAM REGISTERED, w/PLL FEATURES DESCRIPTION Double-data-rate architecture The W3EG64255S is a 256Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of sixteen 256Mx4

72008

Abstract: 300CT 50ct 72002 72006
Contextual Info: ET-72000 SERIES Current Sense Inductors œ œ œ œ œ Secondary furnished Designed for switch power supply applications 2500Vrms primary to secondary Hi-Pot Frequency range 20KHz to 200KHz Encapsulated construction Mechanical Dimensions: ET- 72000 SERIES

FRL-644

Abstract: 572.741.022.0 CDQ2B63-50D Rexroth 7860 CT032U0025AE AA-0058G 70PYES0033 AF3000-03 8L502-102 JA1040
Contextual Info: Issued November 1997 262-1435 Data Pack G Pneumatic cross reference Data Sheet Listing products from COMPAIR MAXAM CROUZET DOMNICK HUNTER LEGRIS MANNESMANN REXROTH NORGREN ORIGA SMC WATSON SMITH with a cross reference to the RS stock number. Products not listed can be obtained via the RS Pneumatics searchline

Contextual Info: APT20M36BLL APT20M36SLL 200V 65A 0.036Ω POWER MOS 7 R MOSFET BLL D3PAK TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

MKP 419

Contextual Info: MKP 416 to 420 Vishay BCcomponents Metallized Polypropylene Film Capacitors MKP Radial Potted Type FEATURES 168x12 halfpage 5, 10 and 15 mm lead pitch. Supplied loose in box, in ammopack and taped on reel. Intermediate values are available of the E96 series

dsas 5-0

Abstract: PE4304 pe4259 AN27 PE4210 PE4230 PE4237 PE4239 PE4242 PE4244
Contextual Info: Application Note AN27 9380 Carroll Park Drive • San Diego, CA 92121, USA Tel: 858-731-9400 • Fax: 858-731-9499 858 • www.psemi.com Using Blocking Capacitors with UltraCMOSTM Devices Introduction Peregrine’s UltraCMOSTM switches and DSAs have many advantages over other technologies.

FBP-600

Abstract: FBP-1000 SB98107 E56412 FBP-50 FBP-60 FBP-70 FBP-35 bussmann semiconductor fuse fbp100 FBP-300
Contextual Info: Bussmann Semiconductor Fuses FBP 700 Volts AC/DC, 35-1000 Amps CATALOG SYMBOL: FBP 700V AC, 700V DC INTERRUPTING RATING 200,000 AMPERES RMS SYMMETRICAL U.L. RECOGNIZED GUIDE #JFHR2, FILE # E56412 Catalog Numbers FBP-35 FBP-80 FBP-350 FBP-40 FBP-90 FBP-400

CK3400

Abstract: DTMF decoder with access code schematic
Contextual Info: 7011073 □ Qlb'ìt.b 032 BRKIil RC96DPL and RC144DPL RC96DPL V.32/V.29 9600 bps and RC144DPL V.32 bis/V.17 14400 bps Low Power Data/Fax/Voice Modems Rockwell INTRODUCTION FEATURES The Rockwell RC96DPL and RC144DPL modems are high speed modem data pump families that support data

APT8020JLL

Abstract: APT30DF100
Contextual Info: APT8020JLL 800V POWER MOS 7 R 33A 0.200Ω MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

BJ3I50

Abstract: BJ3I50S
Contextual Info: "A" MODEL NUMBER 5. HEX B J 3 150 . 500 BJ3I50S . 562 NUT ALL M A T E R I A L S M E E T THE O U T G A S S I N G R E Q U I R E M E N T S O F N A S A S P E C I F I C A T I O N S P - R - 0 0 2 2 A A N D TEI V A C U U M READY SPECIFICATION TT-09 4. IF S A F E T Y