S4174 Search Results

A11t

Contextual Info: TMS416400, TMS416400P, S417400, S417400P TMS426400, TMS426400P, TMS427400, TMS427400P 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS SMKS881 A - MAY 1995 - REVISEDJUNE1995 Electrical characteristics for TM S416400/P and TM S417400/P is Production Data. Electrical

417400

Abstract: 77261 T 2109 TMS416400 TMS416400P TMS417400 TMS417400P TMS426400 TMS426400P TMS427400
Contextual Info: TMS416400, TMS416400P, S417400, S417400P TMS426400, TMS426400P, TMS427400, TMS427400P 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS SM KS881A - MAY 1 9 9 5 - REVISEDJUNE1995 Electrical characteristics for TM S416400/P and TM S417400/P is Production Data. Electrical

TMS417409A

Contextual Info: TMS416409A, S417409A TMS426409A, TMS427409A 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS SMKS893B - AUGUST 1996 - REVISED APRIL 1997 I I I I I This data sheet is applicable to a ll TMS41x409As and TMS42x409As symbolized by Revision “B ”, Revision “E ”, and subsequent

71C65L

Abstract: T71C
Contextual Info: CMOS RESETTABLE RAM WITH CMOS I/O LEVELS 64K 8K x 8-BIT IDT 71C65S IDT 71C65L FEATURES: DESCRIPTION: • Input and o u tp u t d ire c tly C M O S -co m p a tib le • H ig h -spe e d (equal a cce ss and c y c le time) The ID T71C65 Is a 65,536-bit h ig h -sp ee d static RAM organized

77261

Abstract: trc 20020
Contextual Info: TMS416400A, S417400A 4194304 BY 4-BTT DYNAMIC RANDOM-ACCESS MEMORIES _ SM KSa89B- AUGUST 1996 - REVISED OCTOBER 1997 This data sheet is applicable to all TMS41x400As symbolized by Revision “B”, Revision “E” and subsequent revisions as

NTC 20D-20

Abstract: 7400P s427400 IC TTL 7400 input leakage current 6400P/P1L-6400/6460/6480P
Contextual Info: TMS41 6400, TMS41 6400P, TMS41 7400, TMS41 7400P T M S 426400, TMS426400P, T M S 427400 , T M S 4 2 7 4 0 0 P 41 9 4 3 0 4 -W Q R D B Y 4-BIT H IG H -S P E E D D R A M S SMKS881B - MAY 1995 - REVISED AUGUST 1995 Electrical characteristics for T M S 416400/P and

TMS417409A

Contextual Info: T M S 4 1 6409 A, T M S 4 1 7 4 0 9 A TMS426409A, TMS426409A/P, TMS427409A, TMS427409A/P 4 1 9 4 3 Q 4- W O RD BY 4-BI T H I G H - S P E E D D R A M S S M K S 8 9 3 A -A U G U S T 1 9 9 6 - R EVISED FE BR U ARY 1997 DJ/DGA PACKAGES TOP VIE W This data sheet Is applicable to all

LS-4174P

Abstract: Compal Electronics
Contextual Info: 5 4 3 COMPAL CONFIDENTIAL PCB FFC 45@ KSI2 BT_BTN# KSI3 EMAIL_BTN# KSI4 IE_BTN# KSI5 E-KEY_BTN# D +5VS 2 2 1 R2 560_0402_5% 1 R1 56_0402_5% H4 H_2P7X3P2 1 H3 H_2P7 1 H2 H_3P0 WL_BTN# 2 +3VS FD4 1 AMB LED1 HT-191UD_Amber_0603 (BLUE) LED2 HT-191NBQA_BLUE_0603

hollingsworth h270

Abstract: TL3080 MIL-T-7928/1 R3454B XR5109N R4271S TL3061 MS25036 XR1858SN tl3062
Contextual Info: How to use your catalog This catalog is organized for your convenience in specifying and ordering Hollingsworth Solderless Terminals. The table of Contents lists major sections and highlights the content of each. Each section is preceded by an explanation of the

Contextual Info: CM O S RESETTABLE RAM W ITH C M O S I/O LEVELS 6 4 K 8K x 8-BIT IDT 71C65S IDT 71C65L FEATURES: DESCRIPTION: • Input and output directly CMOS-compatible The IDT71C65 is a 65,536-bit high-speed static RAM organized as 8 K x 8 . Inputs and outputs are com patible with industry stan­

tms417409

Abstract: 417409
Contextual Info: TM S 41 6409 , T M S 4 1 7 4 0 9 41 9 4 3 0 4 - W O R D B Y 4 - B IT H I G H - S P E E D D R A M S S M K S 884-M A R C H 1996 Organization . . . 4 1 9 4 3 0 4 x 4 DJ PACKAGE TOP VIEW Single 5-V Power Supply Performance Ranges: ACCESS TIME ’41x409-60 ’41x409-70

SIMM 30-pin

Abstract: TM497GU8 30-pin simm memory TMS417400 TMS417400DJ
Contextual Info: TM497GU8 4194394-WORD BY 8-BIT DYNAMIC RAM MODULE S M M S498-A PR IL 1994 Organization . . . 4194304 x 8 U SINGLE-IN-LINE PACKAGE TOP VIEW Single 5-V Power Supply (±10% Tolerance) 30-Pin Single-In-Line Memory Module (SIMM) for Use With Sockets VCC CAS DQ1