S300F Search Results

Contextual Info: PART No. H D 1-D 2 A ' MAX. HTSM-M3-L-5-2 M3 5.01.197 1.0 .040) HTSM-M3-L-5.5-2 M3 5.5 (.217) 1.0 (.043) HTSM-M4-L-7-2 M4 7.0 [.276] 1.4 (.055) HTSM-M5-L-8-2 M5 8.0 p i 5) 1.6 (.063) PI P2 ST YLE 2 P3 PART No. D1=D2 H A ' MAX. HTSM-M6-L-9-2 M6 9.0 (355)

Contextual Info: SEMELAB LT» 37E D • âl331ô? QOOOSTB SEMELAB OEC 3 1 tSST 2N 6765 2N 6766 5 ^ 7 " * o > MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm * - T /£f o o 1.6 APPLICATIONS 1 39.5 20.3 • SWITCHING REGULATORS i 169 A • CONVERTERS • MOTOR DRIVERS

s41 hall effect sensor s41

Abstract: sensor sr21 datalogic DATA SENSOR TLU-015 D50NK LASER ILLUMINATOR hall effect sensor s41
Contextual Info: SENSORS, SAFETY & MEASUREMENT Short Form Catalogue 2014 I 2015 www.acdc.co.za PRODUCT PICTURE OUTPUT SPECIFICATIONS PAGE • 3 Wire VDC PNP NO-NC, NPN NO-NC 1 • 2 Wire VDC NO-NC 1 • 2 Wire VAC NO-NC 1 • Terminal Block VDC PNP NO-NC, NPN NO-NC 2 • 2 Wire VAC/VDC NO, NC

IRF120

Abstract: LS 74145 IRF121 IRF122 IRF123 RF122 IRF 5070 IRF N-Channel Power MOSFETs 05071
Contextual Info: 7964142 SAMSUNG SEMICONDUCTOR de I 7^4142 INC_98D_ 0 5 0 6 9_ J □ D D S D tii fj" : n -c h a n n e l POWER MOSFETS L> IR F 1 2 0 /1 2 1 /1 2 2 /1 2 3 FEATURES Low RoS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

Contextual Info: 7964142 SAMSUNG SEMICONDUCTOR — I R 1 7 1 2 0 1 2 1 1 2 2 /1 2 3 i F - - T f l / D E T b M 2 m G INC_ 98 D 05 0 6 9 D D S D b T b ? '/ N-CHANNEL POWER MOSFETS | / FEATURES Low RoS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

75n08

Abstract: megamos 46 08 09 6 TL 1074 CT Mosfet K 135 To3 p 75n08 k 1120 P-Channel MOSFET 800v f g megamos
Contextual Info: I X Y S IDE CORP D I 4böbS?b D OOG a b b T □IXYS I 't f - l Ç MegaMOS FETs IXTH75N10, 08 IXTM75N10, 08 MAXIMUM RATINGS Sym. IXTH75N08 IXTM75N08 IXTH75N10 IXTM75N10 Unit Drain-Source Voltage 1 Vd s s 80 100 Vdc Drain-Gate Voltage (Rq s = 1-OMfl) (1)

584 TRANSISTOR

Abstract: MPS3702 MPS3703
Contextual Info: SAMSUNG S EMIC ONDUCT OR INC MPS3703 IME O 1 7^4145 0007314 3 | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V cso =30V * Collector Dissipation: P c m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

IRF450

Abstract: mosfet IRF450 th414 IRF452 IRF250 IRF251 IRF252 IRF253 IRF451 Z047
Contextual Info: I I fi _ ' 7 9 6 4 1 4 2 S A M S U N G S E M I C O N D U C T O R INC . DL j v T b m H E 0 0 0 5 1 4 4 S | 98D 05 144_ N-CHANNEL POWER MOSFETS IRF450/451/452/453 FEATURES Low RDS on at high voltage Improved inductive ruggedness Excellent high voltage stability

transistor c 616

Abstract: ksp25
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP25/26/27 DARLINGTON TRANSISTOR TO-92 • Collector-Em itter Voltage: V ces=KSP25: 40V KSP26:50V KSP27:60V • Collector Dissipation:Pc max “ 625mW ABSOLUTE MAXIMUM RATINGS (TA=25t:) C haracteristic Collector-Base Voltage

2N4400

Abstract: MPS3705 ic hp samsung transistor D 586
Contextual Info: {SAMSUNG SEMICON DUC TO R INC MPS3705 14E D | 7 ^ 4 1 4 5 00Q731fc, 7 | NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: Vceo=30V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

HAX 500-S

Contextual Info: INTERNATIONAL RECTIFIER I O R i n t e r n a t i o n a l r e c t i f ie r 73 !>E l 4ñSS4Sa OOOt.'ìbS 5 | T ' 2 W ^ Data Sheet No. PD-3.146 S30DF & S30DFH SERIES 400-200 VOLTS RANGE STANDARD TURN-OFF TIME 8 fjs 355 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE STUD MOUNTED SCRs

S30DF

Abstract: TD-209
Contextual Info: IN TERNATI ONAL RECT IF IER ’ D e 4 ÖSSHSH QOObTST 7 |~~ “P - 2. 5 - / 7 73 Data Sheet No. PD-3.147 IN T E R N A T IO N A L R E C T IF IE R IO R S30DF & S30DFH SERIES 800-600 VOLTS RANGE STANDARD TURN-OFF TIME 12/vs 320 AMP RMS, RING AMPLIFYING GATE

LVC573A

Abstract: SN54LVC573A SN74LVC573A
Contextual Info: SN54LVC573A, SN74LVC573A OCTAL TRANSPARENT D-TYPE LATCHES WITH 3-STATE OUTPUTS S C A S 300F - JA N U A R Y 1 993 - REVISED A U G U S T 1997 EPIC Enhanced-Performance Implanted CMOS Submicron Process SN54LVC573A . . . J OR W PACKAGE SN74LVC573A . . . DB, DW, OR PW PACKAGE

Contextual Info: SEHELAB LTD 37E D • 0133107 0000317 S E iV lE L A B 2N 6799 2N 6800 MOS POWER N-Channel Enhancement Mode Dimensions in mm I 1 / Î 8.5 i i 1 max. i ^ 5.1 .9-4- ^ max mm. ^ • FAST SW ITCH IN G • M O TO R CO NTRO LS • POWER SUPPLIES max. PIN 1 - S o u r c e

SSR3055

Abstract: LP12A u3055
Contextual Info: N-CHANNEL POWER MOSFET SSR3055/SSU3055 FEATURES • • • • • • • • D-PACK Lower Ros on Excellent voltage stability Fast switching speeds Rugged polysllicon gate cell structure Lower Input capacitance Extended safe operating area Improved high temperature reliability