S2V 16 Search Results

s3h-02

Abstract: S52A s3vc0 S2V20 S2LA20 s19j S1K20H S1K40 S2K20 S2K40
Contextual Info: -71 m tft te & % Vr s m Vrrm V (V) Vr 1FM T fc# (A) (° C ) lo, If * [si & n £ & I Rtnax VFtnax IFSM m M - & fc fk ft * m <d ^ m S1K 20H S1K 40 S2K 20 S2K 20H S 2K 40 S2L20U S2L40 S2L40 S2L60 S2LA20 S2V 20 S2V 60 S 3 H -0 2 S 3K 40 S3L20U m n a m n ñ

C502B

Abstract: clock ma 1042
Contextual Info: PL602-00 Multiplier XO IC Die for 12 to 25MHz Parallel Resonant Crystals FEATURES DIE CONFIGURATION •     VDD VDD S0V S1V S2V Integrated crystal oscillator circuitry XO . Low phase noise (-125dBc @ 10kHz offset and 155.52MHz output) Selectable frequency multipliers (x1, x2, x4, x8

clock ma 1042

Abstract: C502A P602-00DC PLL602-00DC A-0303
Contextual Info: PLL602-00 Multiplier XO IC Die for 12 to 25MHz Parallel Resonant Crystals FEATURES DIE CONFIGURATION • • • • VDD VDD S0V S1V S2V Integrated crystal oscillator circuitry XO . Low phase noise (-135dBc @ 10kHz offset) selectable frequency multipliers (x1, x2, x4, x8

XTAL 25MHz

Abstract: 25Mhz datasheet crystal 155.52MHZ XTAL 25MHZ Datasheet C502A P502-00DC PLL502-00 PLL502-00DC
Contextual Info: PLL502-00 Multiplier VCXO IC Die for 12 to 25MHz Parallel Resonant Crystals • • • • • VDD S0V S1V S2V • 65 mil VDD Integrated voltage-controlled crystal oscillator circuitry VCXO (pull range 500ppm minimum). Low phase noise (-130dBc @ 10kHz offset at

marking 2u

Abstract: marking code 10 sot23 S2V 3 BCW66 SMBTA64
Contextual Info: SMBTA64 PNP Silicon Darlington Transistors 3 • High collector current • High DC current gain 2 1 Type Marking SMBTA64 s2V Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCES 30 Collector-base voltage

Contextual Info: SMBTA63, SMBTA64 PNP Silicon Darlington Transistors 3
High collector current
High DC current gain 2 1 Type Marking Pin Configuration SMBTA63 s2U 1=B 2=E 3=C SOT23 SMBTA64 s2V 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage

Contextual Info: SMBTA63, SMBTA64 PNP Silicon Darlington Transistors 3
High collector current
High DC current gain 2 1 Type Marking Pin Configuration SMBTA63 s2U 1=B 2=E 3=C SOT23 SMBTA64 s2V 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage

S2V 80

Abstract: SMBTA63 SMBTA64
Contextual Info: SMBTA63, SMBTA64 PNP Silicon Darlington Transistors 3
High collector current
High DC current gain 2 1 Type Marking Pin Configuration SMBTA63 s2U 1=B 2=E 3=C SOT23 SMBTA64 s2V 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage

DIODE in s2v

Abstract: DIODE S2v DIODE S2v 50 DIODE S2v 01 S2V 80 S2V71 S2V7 diode color code
Contextual Info: アキシャルダイオード 一般整流ダイオード Rectifier Diode Axial Diode •外形寸法図 OUTLINE DIMENSIONS Package：AX10 Unit : mm Weight：0.65g（typ.） 7＋0.5 −0 26.5±2 26.5±2 φ4.4＋0.2 −0.1 ＊ 600V 1.7A φ1.0±0.1 S2V□

S2V 80

Abstract: S2V 3 S2V 12
Contextual Info: SHINDENGEN General Purpose Rectifiers Single OUTLINE DIMENSIONS S2V60 Unit : mm 600V 1.7A FEATURES High voltage High reliability with superior moisture resistance Applicable to Automatic Insertion APPLICATION Conventional Rectification Power source Power Supply

S2V 80

Abstract: f17a S2V 15 S2V 3 S2V20
Contextual Info: SHINDENGEN General Purpose Rectifiers Single OUTLINE DIMENSIONS S2V20 Unit : mm 200V 1.7A FEATURES High voltage High reliability with superior moisture resistance Applicable to Automatic Insertion APPLICATION Conventional Rectification Power source Power Supply

pz2-42

Abstract: TM130DZ i7050 E80276 30-158 PZ-24 vot3
Contextual Info: TM130DZ/CZ/PZ-24,-2H T M 1 3 0 D Z /C Z /P Z - 2 4 .- 2 H • IT A V • V rrm • V drm . 130A . 1 2 0 0 /1600V £ - £ * * à g L : t 7 « J Œ .1 2 0 0 /1600V

Contextual Info: SCHOTTKY BARRIER DIODE C16T03Q C16T04Q 17.7A/30— 40V SQUARE-PAK FEATURES ° Similar to TO-263AB Case, Surface Mount Device ° Dual Diodes - Cathode Common » Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 30 Volts through 100 Volts Types Available

PLG100-VH

Abstract: PLG150-DX Yamaha XG PLG100-XG PLG150-PF PLG150 PLG150-AN Yamaha PLG150-VL yamaha keyboard
Contextual Info: Introducing the y S80 Working with XGworks 3.0 Lite XGworks 3.0 Lite is a Windows sequencing program included on the S80 CDROM. It can house several different software plug-ins designed to act as Voice Editors for the Modular Synthesis Plug-in System. The

RCV57

Contextual Info: HITACHI/ OPTOELECTRONICS i44cìb2QS DQ123S7 7bl « H I T M . ' HrTACHi blE » SDH/SONET O C -12 Lightwave Receiver RCV5702AN Features • • Complied with S O N E T /S D H standard • • InGaAs APD Operation at 622.08M b /s for 1.3^im or • 1.55|im wavelength

c3v2

Abstract: E526HN-100318 S3V 09 e526hna-100079 TOKO Inductance Test 10EZ TOKO 10EZ E526H E526HNA-100311 S2V 80 TOKO Inductance Test 10K
Contextual Info: 98 MC120 Î3TOKO Moktod Colls TYPE MC120 Space Wound: Inductance Range 0.04-0.21 jiH Close Wound: Inductance Range0.04-0.53|iH Frequency Range: 3 0 -1 5 0 M H z': Temperature Coefficient: I5 0 p p m /°C , max. 1 II t fj Unit: mm Features • Popular for low profile applications.

Contextual Info: 35E D • A23b320 0Q172Ô4 2 « S I P PNP Silicon Darlington transistors SMBTA 63 SIEMENS/ SPCL, SEMICONDS SM BTA64 High collector current High DC current gain Type Marking Ordering code or versions in bulk Ordering code for versions on 8 mm-tape Package

DIODE 24B

Abstract: DIODE S2v DIODE in s2v Mitsubishi transistor circuit diagram for je 182 g
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM800HA-24B j HIGH POWER SWITCHING USE [ INSULATED TYPE | QM800HA-24B • • • • • Ic Collector c u rre n t. 800A V cex Collector-em itter v o lta g e 1200V hFE DC current g a in . 750

Contextual Info: 2.1 Ω On Resistance, ±15 V/+12 V/±5 V iCMOS Dual SPST Switches ADG1421/ADG1422/ADG1423 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM 2.1 Ω on resistance 0.5 Ω maximum on resistance flatness Up to 250 mA continuous current Fully specified at +12 V, ±15 V, ±5 V

Contextual Info: 2.1 Ω On Resistance, ±15 V/+12 V/±5 V iCMOS Dual SPST Switches ADG1421/ADG1422/ADG1423 FEATURES FUNCTIONAL BLOCK DIAGRAM 2.1 Ω on resistance 0.5 Ω maximum on resistance flatness Up to 250 mA continuous current Fully specified at +12 V, ±15 V, ±5 V

ADG1421BRMZ

Abstract: 08487 adg1421 ADG1422 10 lead analog devices b 11 S2V 80 ADG1423 ADG1433 S2V 3 10-Lead LFCSP footprint
Contextual Info: 2.1 Ω On Resistance, ±15 V/+12 V/±5 V iCMOS Dual SPST Switches ADG1421/ADG1422/ADG1423 FEATURES FUNCTIONAL BLOCK DIAGRAM 2.1 Ω on resistance 0.5 Ω maximum on resistance flatness Up to 250 mA continuous current Fully specified at +12 V, ±15 V, ±5 V No VL supply required

d2758

Abstract: DIODE in s2v
Contextual Info: DS3680I QUAD TELEPHONE RELAY DRIVER SLRS014B- D27S6, MARCH 1966 - REVISED APRIL 1993 Designed for -S2-V Battery Operation D O R N PA C K A G E TOP VIEW 50-mA Output Current Capability Input Compatible With TTL and CMOS 1 IN + [ 1 IN— [ 2 IN— [ 2 IN + [

PCD3-5-1212

Abstract: T-20 T-23 T-25 CHI MAI sfe 10,7ma 72ydc
Contextual Info: PCD3- * - * EVALUATION DATA m a ? -* DWG No.C 136-53-01 APPD. CHK. DWG. H<hkL /V. 9/ / k } /'CTO 2 9 / j U / t o DENSEI-LAMBDA INDEX PAGE 1. Characteristics 1 —1 # # 1 4 Steady state data .T-1~16

Contextual Info: P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Full CMOS, 6T Cell 5V ± 10% Power Supply High Speed Equal Access and Cycle Times - l2/l5/20/25ns (Commercial) - 20/25/35/45/55ns (Military) Data Retention with 2.0V Supply, 10 nA Typical