S2V 15 Search Results

s3h-02

Abstract: S52A s3vc0 S2V20 S2LA20 s19j S1K20H S1K40 S2K20 S2K40
Contextual Info: -71 m tft te & % Vr s m Vrrm V (V) Vr 1FM T fc# (A) (° C ) lo, If * [si & n £ & I Rtnax VFtnax IFSM m M - & fc fk ft * m <d ^ m S1K 20H S1K 40 S2K 20 S2K 20H S 2K 40 S2L20U S2L40 S2L40 S2L60 S2LA20 S2V 20 S2V 60 S 3 H -0 2 S 3K 40 S3L20U m n a m n ñ

C502B

Abstract: clock ma 1042
Contextual Info: PL602-00 Multiplier XO IC Die for 12 to 25MHz Parallel Resonant Crystals FEATURES DIE CONFIGURATION •     VDD VDD S0V S1V S2V Integrated crystal oscillator circuitry XO . Low phase noise (-125dBc @ 10kHz offset and 155.52MHz output) Selectable frequency multipliers (x1, x2, x4, x8

C502A

Abstract: P502-50DC PLL502-50 PLL502-50DC s2v25
Contextual Info: PLL502-50 VCXO IC Die for 20 to 52MHz Parallel Resonant Crystals DIE CONFIGURATION FEATURES • • • • • • XIN 27 XOUT 29 VCON 31 OE^ VDD VDD S0V S1V S2V Integrated voltage-controlled crystal oscillator circuitry VCXO (pull range 380ppm minimum).

Contextual Info: SIEMENS PNP Silicon Darlington Transistors SMBTA 63 SMBTA 64 • High collector current • High DC current gain Type Marking Ordering Code tape and reel PinCïonfigur ation 1 2 3 Package1) SMBTA 63 SMBTA 64 s2U s2V Q68000-A2625 Q68000-A2485 B SOT-23 E C

clock ma 1042

Abstract: C502A P602-00DC PLL602-00DC A-0303
Contextual Info: PLL602-00 Multiplier XO IC Die for 12 to 25MHz Parallel Resonant Crystals FEATURES DIE CONFIGURATION • • • • VDD VDD S0V S1V S2V Integrated crystal oscillator circuitry XO . Low phase noise (-135dBc @ 10kHz offset) selectable frequency multipliers (x1, x2, x4, x8

clock ma 1042

Abstract: max 474 ic data X62M
Contextual Info: PL502-00 Multiplier VCXO IC Die for 12 to 25MHz Parallel Resonant Crys tals •     XIN 27 XOUT 29 VDD S0V S1V S2V  65 mil VDD Integrated voltage-controlled crystal oscillator circuitry VCXO (pull range 500ppm minimum). Low phase noise (-125dBc @ 10kHz offset and

15d smd transistor

Abstract: C502A P502-50DC PLL502-50 PLL502-50DC A0303-03J
Contextual Info: VCXO IC Die for 20 to 52MHz Parallel Resonant Crystals •     XIN 27 XOUT 29 VCON 31 S2V 23 S1V 25 S0V VDD 65 mil VDD  Integrated voltage-controlled crystal oscillator circuitry VCXO (pull range 380ppm minimum). Selectable frequency dividers (x1, 1/2, 1/4, 1/8)

XTAL 25MHz

Abstract: 25Mhz datasheet crystal 155.52MHZ XTAL 25MHZ Datasheet C502A P502-00DC PLL502-00 PLL502-00DC
Contextual Info: PLL502-00 Multiplier VCXO IC Die for 12 to 25MHz Parallel Resonant Crystals • • • • • VDD S0V S1V S2V • 65 mil VDD Integrated voltage-controlled crystal oscillator circuitry VCXO (pull range 500ppm minimum). Low phase noise (-130dBc @ 10kHz offset at

marking 2u

Abstract: marking code 10 sot23 S2V 3 BCW66 SMBTA64
Contextual Info: SMBTA64 PNP Silicon Darlington Transistors 3 • High collector current • High DC current gain 2 1 Type Marking SMBTA64 s2V Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCES 30 Collector-base voltage

DIODE S2v

Abstract: S2V60 S2V20 17A60
Contextual Info: アキシャルダイオード Rectifier Diode Axial Diode •外観図 OUTLINE Unit : mm Weight : 0.65g （typ.） Package：AX10 600V 1.7A 26.5 • 耐湿性に優れ高信頼性 • 高耐圧 ② ＊ ① 特長 φ1.0 S2V□ φ4.4 26.5 7 ＋① ②−

marking code SOT23 SSi

Abstract: MARKING code SSi SOT23 code marking ssi sot-23 O ssi SOT-23
Contextual Info: SIEMENS PNP Silicon Darlington Transistors SMBTA 63 SMBTA 64 • High collector current • High DC current gain Type Marking Ordering Code tape and reel PinCïonfigui ation 1 2 3 Package1) SMBTA 63 SMBTA 64 s2U s2V Q68000-A2625 Q68000-A2485 B SOT-23 E C

Q68000-A2485

Abstract: Q68000-A2625
Contextual Info: PNP Silicon Darlington Transistors SMBTA 63 SMBTA 64 High collector current ● High DC current gain ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBTA 63 SMBTA 64 s2U s2V Q68000-A2625 Q68000-A2485 B SOT-23 E C Maximum Ratings

Contextual Info: SMBTA63, SMBTA64 PNP Silicon Darlington Transistors 3
High collector current
High DC current gain 2 1 Type Marking Pin Configuration SMBTA63 s2U 1=B 2=E 3=C SOT23 SMBTA64 s2V 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage

Contextual Info: SMBTA63, SMBTA64 PNP Silicon Darlington Transistors 3
High collector current
High DC current gain 2 1 Type Marking Pin Configuration SMBTA63 s2U 1=B 2=E 3=C SOT23 SMBTA64 s2V 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage

EHP00364

Contextual Info: SMBTA 63, SMBTA 64 PNP Silicon Darlington Transistors 3 • High collector current • High DC current gain 2 1 Type Marking Pin Configuration SMBTA 63 s2U 1=B 2=E 3=C SOT-23 SMBTA 64 s2V 1=B 2=E 3=C SOT-23 VPS05161 Package Maximum Ratings Parameter Symbol

DIODE in s2v

Abstract: DIODE S2v DIODE S2v 50 DIODE S2v 01 S2V 80 S2V71 S2V7 diode color code
Contextual Info: アキシャルダイオード 一般整流ダイオード Rectifier Diode Axial Diode •外形寸法図 OUTLINE DIMENSIONS Package：AX10 Unit : mm Weight：0.65g（typ.） 7＋0.5 −0 26.5±2 26.5±2 φ4.4＋0.2 −0.1 ＊ 600V 1.7A φ1.0±0.1 S2V□

DIODE S2v 73

Abstract: DIODE in s2v shindengen rectifier SHINDENGEN DIODE DIODE S2v 50 DIODE S2v S2V60
Contextual Info: -A S æ fE ^ *-K 7 Rectifier Diode Axial Diode OUTLINE DIMENSIONS S2V Case : 1.0 <f> Um l ; mm W e ig h t : 69g 24 MIS *4 8"“ , 73 1 600V 1.7A llfg M ° M > © _ Marking ffl C o lo r code, Cathode band i í • -B- © CD •M W Œ Red : S2V20 îj w

S2V 80

Abstract: S2V 3 S2V 12
Contextual Info: SHINDENGEN General Purpose Rectifiers Single OUTLINE DIMENSIONS S2V60 Unit : mm 600V 1.7A FEATURES High voltage High reliability with superior moisture resistance Applicable to Automatic Insertion APPLICATION Conventional Rectification Power source Power Supply

S2V 80

Abstract: f17a S2V 15 S2V 3 S2V20
Contextual Info: SHINDENGEN General Purpose Rectifiers Single OUTLINE DIMENSIONS S2V20 Unit : mm 200V 1.7A FEATURES High voltage High reliability with superior moisture resistance Applicable to Automatic Insertion APPLICATION Conventional Rectification Power source Power Supply

sick sensor

Contextual Info: Color Sensors, Operation Uses fo r co lo r sensors color sensors are becoming increa­ singly im portant in the automation o f processes and manufacturing lines in industry, particularly the processing industry. In practice, the possibilities fo r application are virtually unlimited.

LD 7522

Abstract: ld 7523 SN7523N SN7524N SN7525N SN7522N
Contextual Info: FEATURES ABSOLUTE MAXIMUM RATINGS . • . • Differential Input Voltage VCC Strobe & Gain Input Voltages Storage Temperature Operating Temperature Power Dissipation DUAL SENSE AMPS ±4mV THRESHOLD UNCERTAINTY DESIGN VERSATILITY 25ns PROPAGATION DELAY ±5V

S3V 8* Rectifier

Abstract: s4vb s4vb 10 46 s4vb bridge rectifier
Contextual Info: Large Ifsm I-I S MD • — 0 .8 -1 A - 0 .4 -1 A 1-1.5A Bridge * • S I P - 4~6A *?i gDiodes j 1 0 -2 5 A * S Q IP ;• 2 .3 -2 0 A 2 -1 0 A 1 5 -5 0 A * SI ZB □ S1NB □ S1W B A D S1YB □ S1ZB □ S1NB □ S1 WB(A) □ S1VB □ D2SBA □ — D 2SBD L — Low Noise

MPY600

Abstract: MPY600AP 25VY
Contextual Info: 185 - MPY600 v ± V CC = ± id 5 V , *?• m ( 0 ^5 # Burr B r o w n T a= 2 5 r ) 4k ft MPY600AP * 'h ; * * ¥ 1 * £ ± 1 ,- y2 ± 2 y z ,- z 2 ± 2 A-umtEmw ± 2 .2 V ± 2 .5 V TtyM v 100 / / l . 5 h l E K 'J - 7 Y +l 11 > I SV R «E a t) m sm m c a

Contextual Info: MITSUBISHI LSIs M5M5255CP,FP,KP-55LL,-55XL, -70LL,-70XL 262144-BfT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION This M5M5255CP.FP.KP is a 262144-bit CMOS static RAMs organized as 32768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of