S2V 15 Search Results

s3h-02

Abstract: S52A s3vc0 S2V20 S2LA20 s19j S1K20H S1K40 S2K20 S2K40
Contextual Info: -71 m tft te & % Vr s m Vrrm V (V) Vr 1FM T fc# (A) (° C ) lo, If * [si & n £ & I Rtnax VFtnax IFSM m M - & fc fk ft * m <d ^ m S1K 20H S1K 40 S2K 20 S2K 20H S 2K 40 S2L20U S2L40 S2L40 S2L60 S2LA20 S2V 20 S2V 60 S 3 H -0 2 S 3K 40 S3L20U m n a m n ñ

clock ma 1042

Abstract: C502A P602-00DC PLL602-00DC A-0303
Contextual Info: PLL602-00 Multiplier XO IC Die for 12 to 25MHz Parallel Resonant Crystals FEATURES DIE CONFIGURATION • • • • VDD VDD S0V S1V S2V Integrated crystal oscillator circuitry XO . Low phase noise (-135dBc @ 10kHz offset) selectable frequency multipliers (x1, x2, x4, x8

clock ma 1042

Abstract: max 474 ic data X62M
Contextual Info: PL502-00 Multiplier VCXO IC Die for 12 to 25MHz Parallel Resonant Crys tals •     XIN 27 XOUT 29 VDD S0V S1V S2V  65 mil VDD Integrated voltage-controlled crystal oscillator circuitry VCXO (pull range 500ppm minimum). Low phase noise (-125dBc @ 10kHz offset and

marking code SOT23 SSi

Abstract: MARKING code SSi SOT23 code marking ssi sot-23 O ssi SOT-23
Contextual Info: SIEMENS PNP Silicon Darlington Transistors SMBTA 63 SMBTA 64 • High collector current • High DC current gain Type Marking Ordering Code tape and reel PinCïonfigui ation 1 2 3 Package1) SMBTA 63 SMBTA 64 s2U s2V Q68000-A2625 Q68000-A2485 B SOT-23 E C

S2V 80

Abstract: S2V 3 S2V 12
Contextual Info: SHINDENGEN General Purpose Rectifiers Single OUTLINE DIMENSIONS S2V60 Unit : mm 600V 1.7A FEATURES High voltage High reliability with superior moisture resistance Applicable to Automatic Insertion APPLICATION Conventional Rectification Power source Power Supply

S2V 80

Abstract: f17a S2V 15 S2V 3 S2V20
Contextual Info: SHINDENGEN General Purpose Rectifiers Single OUTLINE DIMENSIONS S2V20 Unit : mm 200V 1.7A FEATURES High voltage High reliability with superior moisture resistance Applicable to Automatic Insertion APPLICATION Conventional Rectification Power source Power Supply

sick sensor

Contextual Info: Color Sensors, Operation Uses fo r co lo r sensors color sensors are becoming increa­ singly im portant in the automation o f processes and manufacturing lines in industry, particularly the processing industry. In practice, the possibilities fo r application are virtually unlimited.

LD 7522

Abstract: ld 7523 SN7523N SN7524N SN7525N SN7522N
Contextual Info: FEATURES ABSOLUTE MAXIMUM RATINGS . • . • Differential Input Voltage VCC Strobe & Gain Input Voltages Storage Temperature Operating Temperature Power Dissipation DUAL SENSE AMPS ±4mV THRESHOLD UNCERTAINTY DESIGN VERSATILITY 25ns PROPAGATION DELAY ±5V

S3V 8* Rectifier

Abstract: s4vb s4vb 10 46 s4vb bridge rectifier
Contextual Info: Large Ifsm I-I S MD • — 0 .8 -1 A - 0 .4 -1 A 1-1.5A Bridge * • S I P - 4~6A *?i gDiodes j 1 0 -2 5 A * S Q IP ;• 2 .3 -2 0 A 2 -1 0 A 1 5 -5 0 A * SI ZB □ S1NB □ S1W B A D S1YB □ S1ZB □ S1NB □ S1 WB(A) □ S1VB □ D2SBA □ — D 2SBD L — Low Noise

MPY600

Abstract: MPY600AP 25VY
Contextual Info: 185 - MPY600 v ± V CC = ± id 5 V , *?• m ( 0 ^5 # Burr B r o w n T a= 2 5 r ) 4k ft MPY600AP * 'h ; * * ¥ 1 * £ ± 1 ,- y2 ± 2 y z ,- z 2 ± 2 A-umtEmw ± 2 .2 V ± 2 .5 V TtyM v 100 / / l . 5 h l E K 'J - 7 Y +l 11 > I SV R «E a t) m sm m c a

VR-61

Abstract: VR-61B VR-61S VR-61U VR-62B VR-63B
Contextual Info: - 278- ft B & PSH W VR-61 VR-61B VR-61B VR-61S VR-61T VR-61U VR-62B VR-63B VRAY6 VRAY15 a m * 'J i? y fT ^T C i f y >r '•/ >>r y * y ^ > * ' ) is > %jM7C :k £ fe VRRM Vr I sm I f . I fm* (mHO (V) (V) (A) (mA) 300 150 150 7. 5 150 150 150 300 150 150 150

506b

Abstract: VR-61 VR-61B VR-61S VR-61U VR-62B VR-63B
Contextual Info: 278- - B VR-61 VR-61B VR-61B VR-61S VR-61T VR-61U VR-62B VR-63B VRAY6 VRAY15 & f t :k £ fe J 15 |S] f $ t t Vf » S B E ®]S Ik W Vc * 4 = BV r • f ® fti ffl # I Rmax * f l = V f (V PSH P VRRM Vr I sm I f . r f *«= I fm* If («A) (V) I r (A) (V) I r ( h A) </i A) Vr (V)

SN7525N

Abstract: SN7524N
Contextual Info: FEATURES ABSOLUTE MAXIMUM RATINGS • • • • Differential Input Voltage Vc c Strobe & Gain Input Voltages Storage Temperature Operating Temperature Power Dissipation DUAL SENSE AMPS =4mV THRESHOLD UNCERTAINTY DESIGN VERSATILITY 25ns PROPAGATION DELAY

DIODE S2v

Abstract: s2v60 DIODE S2V 3 S2V60 S2V20 semiconductor band color code
Contextual Info: アキシャルダイオード Rectifier Diode Axial Diode •外観図 OUTLINE Unit : mm Weight : 0.65g （typ.） Package：AX10 600V 1.7A 26.5 • 耐湿性に優れ高信頼性 • 高耐圧 Feature ②− ＊ 捺印面展開図 Marking 極性および級色別

VR-61

Abstract: VR-61B VR-61S VR-61U VR-62B VR-63B
Contextual Info: - 278- ft B VR-61 VR-61B VR-61B VR-61S VR-61T VR-61U VR-62B VR-63B VRAY6 VRAY15 & a m * 'J i? y PSH P W (mHO :k £ fe V RRM V r I sm (V ) (A) (V ) 300 7. 5 fT ^ T C i f y >r '• / >>r y 300 * y ^ > * ') is > %jM7C 8 6. 5 I f. I fm * (mA) ]S V f (V ) m in

RCV57

Contextual Info: HITACHI/ OPTOELECTRONICS i44cìb2QS DQ123S7 7bl « H I T M . ' HrTACHi blE » SDH/SONET O C -12 Lightwave Receiver RCV5702AN Features • • Complied with S O N E T /S D H standard • • InGaAs APD Operation at 622.08M b /s for 1.3^im or • 1.55|im wavelength

c3v2

Abstract: E526HN-100318 S3V 09 e526hna-100079 TOKO Inductance Test 10EZ TOKO 10EZ E526H E526HNA-100311 S2V 80 TOKO Inductance Test 10K
Contextual Info: 98 MC120 Î3TOKO Moktod Colls TYPE MC120 Space Wound: Inductance Range 0.04-0.21 jiH Close Wound: Inductance Range0.04-0.53|iH Frequency Range: 3 0 -1 5 0 M H z': Temperature Coefficient: I5 0 p p m /°C , max. 1 II t fj Unit: mm Features • Popular for low profile applications.

DIODE S2v 50

Contextual Info: h - K m &w. Single Diode Axial Diode • j* O U T L IN E D IM E N S IO N S S2VD 600V 1.7A ■ R A T IN G S A b so lu te Maximum R a tin gs in fe -p y Symbol m Item O perating J u n c tio n Tem perature . m 'M W ± Average Rectified Forward Current -v A s g + f-Peak Surge Forw ard C u rre n t

Contextual Info: 35E D • A23b320 0Q172Ô4 2 « S I P PNP Silicon Darlington transistors SMBTA 63 SIEMENS/ SPCL, SEMICONDS SM BTA64 High collector current High DC current gain Type Marking Ordering code or versions in bulk Ordering code for versions on 8 mm-tape Package

Contextual Info: U —Jl' R ! 5 { i 178 / ij —Jl' R25 i*330) Reel size iM78(EIAJ R 15)/R e e l size ?*330(EIAJ R25) biz C ase No. 1Z D evice ^ - X No. Case No. 1 ZM 1Z type K Order code 4 0 6 2 4 0 7 2 -r“ T - Yl > X" Taping ~'f i± Dimensions |j j ±o- (12mm Ifg) M R:

ADG1421BRMZ

Abstract: 08487 adg1421 ADG1422 10 lead analog devices b 11 S2V 80 ADG1423 ADG1433 S2V 3 10-Lead LFCSP footprint
Contextual Info: 2.1 Ω On Resistance, ±15 V/+12 V/±5 V iCMOS Dual SPST Switches ADG1421/ADG1422/ADG1423 FEATURES FUNCTIONAL BLOCK DIAGRAM 2.1 Ω on resistance 0.5 Ω maximum on resistance flatness Up to 250 mA continuous current Fully specified at +12 V, ±15 V, ±5 V No VL supply required

S2VC

Abstract: S3VC S1F-C S3SI S3FC s4si s2f-c 32-32NS-2A s4sd 32-32NS
Contextual Info: Przełączniki serii S.F-. 57 Standardowe przełączniki dźwigniowe, wyprowadzenia fastonowe S2F-I • • • • S4F-I S3F-D S1F-I Fot. 2 Fot. 1 przełączanie dźwignią wyprowadzenia fastonowe 1, 2, 3 i 4 polowe * natężenie przełączanych prądów 20 A / 125 VAC

STMicroelectronics DIODE marking code

Abstract: 15KV A115-A C101 IEC-61000-4-2 JESD22 JESD97 STG4259 STG4259BJR
Contextual Info: STG4259 Low voltage 0.3Ω max dual SPDT switch with break-before-make feature and 15KV ESD protection Features • Wide operating voltage range: VCC Opr = 1.65 V to 4.8 V ■ Low power dissipation: ICC = 0.2 µA (max) at TA = 85°C ■ Low ON resistance VIN = 0V:

Contextual Info: アキシャルダイオード Rectifier Diode Axial Diode •外観図 OUTLINE Unit : mm Weight : 0.65g （typ.） Package：AX10 600V 1.7A 26.5 • 耐湿性に優れ高信頼性 • 高耐圧 Feature ②− ＊ 捺印面展開図 Marking 極性および級色別