S2E TRANSISTOR Search Results
S2E TRANSISTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
TPCP8514 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
S2E TRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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C4027
Abstract: SC 2262 2SD4027 2sc4027-applied 2SA1552 2SC4027 500mAIB
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GQ070b0 2SA1552, 2SC4027 2SA1552/2SC4027-applied 2SA1552 C4027 SC 2262 2SD4027 2sc4027-applied 500mAIB | |
2SC4452
Abstract: QVC5 Q60H
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OCR Scan |
G007101 2SC4452 -T-35-07 2SC4452-applied QVC5 Q60H | |
Contextual Info: CALEX MANUFACTURING CO S2E D I IflllESG GDGIGBT 2^7 ICEX Models 166 and 167 Bridgesensors 2401 Stanwell Drive, Concord, CA 94520-4841 510 687-4411 (800)542-3355 BRIDGE POWER SUPPLY FAX: (510) 687-3333 7 1 -U -0 7 The bridge power supply is an adjustable regulated |
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sj 2038
Abstract: 2SD444 ic sj 2038 ANI 1015 IC ti 072 2SC1443 2SA1685 2SC4443 C4443 M685
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0OG707Ã 2SA1685, 2SC4443 2SA1685 sj 2038 2SD444 ic sj 2038 ANI 1015 IC ti 072 2SC1443 C4443 M685 | |
2sd444
Abstract: 2SD44 1SA16
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2SA1685, 2SC4443 2SA1685 2sd444 2SD44 1SA16 | |
2SK968
Abstract: 2SK9
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2SK968 2SK968-applied 2SK968 2SK9 | |
2SC3773
Abstract: SANYO SS 1001
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n707b 2SC3773 1946B 2SC3773 SANYO SS 1001 | |
2SC2812
Abstract: k 2057 3v61 2SA1179 600S8 T29 marking marking AJR 2SC28 AJR MARKING
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2SA1179, 2SC2812 DDD73it T-29-/S 2SA1179/2SC2812-applied 2SA1179 2SC2812 k 2057 3v61 600S8 T29 marking marking AJR 2SC28 AJR MARKING | |
2SC4365
Abstract: 2SC4402 SK200
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2SC4402-applied 2SC4365 2SC4402 SK200 | |
Contextual Info: SANYO SEMICONDUCTOR SEE CORP 2SA1687, 2SC4446 7=H707b D Q0Q75T7 T T -29-/5 # P N P /N PN Epitaxial Planar Silicon Transistors 2 059 Low<Frequency General-Purpose Amp Applications High V iEBO 3013 F e a tu re s . V ery sm all-sized package p erm ittin g th e 2SA1687/2SC4446-applied sets to be m ade sm all a n d slim |
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2SA1687, 2SC4446 H707b Q0Q75T7 2SA1687/2SC4446-applied 2SA1687 | |
pa 2030a
Abstract: 25CC 2SA1622 FC103 2018Al IC 7443
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FC103 2SA1622, pa 2030a 25CC 2SA1622 2018Al IC 7443 | |
Contextual Info: SANYO SEMI CONDUCTOR CORP 22E D ? ci cl ? Q 7 b FC106 QQQ7 3 7 Q 5 T-35-21 NPN Epitaxial Planar Silicon Com posite Transistor 2067 Switching Applications with Bias Resistances R1=47kO, R2=47kO F e a tu re s • On-chip bias resistors (Ri = 47kQ,R2= 47kfl) |
OCR Scan |
FC106 T-35-21 47kfl) FC106 2SC3395, 4139MO | |
SiEMENS PM 350 92Contextual Info: BSE D • 023b32Q 0 0 1 7 2 ^ 2 PNP Silicon Transistors for High Voltages S IE M E N S / SPCL-. 1 WtZIP SMBTA92 SEMICONDS_ SMBTA93 • High breakdown voltage • Low collector-emltter saturation voltage • Complementary types: SMBTA 42, SMBTA 43 NPN |
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023b32Q SMBTA92 SMBTA93 Q68000-A4338 Q68000-A4339 Q68000-A6479 Q68000-A6483 QQ17S^ SiEMENS PM 350 92 | |
bta 92
Abstract: BTA43 smbta93 93 MARKING CODE NPN S2e bta 05
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Q68000-A6479 Q68000-A6483 OT-23 EHP0088J bta 92 BTA43 smbta93 93 MARKING CODE NPN S2e bta 05 | |
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s2e transistor
Abstract: S2E MARKING cp 035 sanyo vds5 2SK242 2SK1065
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2SK1065 2SK1065-applied s2e transistor S2E MARKING cp 035 sanyo vds5 2SK242 2SK1065 | |
Contextual Info: SANYO SEMICONDUCTOR CORP SSE D 7 ^ 7 0 7 ^ 0007107 T -3 2SC4519 1 5 - I S . # 2018A N P N Epitaxial P la n a r S ilic o n T ran sis to r High-Speed Switching Applications 3133 Features . Adoption of FBET process • Low collector-to-emitter saturation voltage |
OCR Scan |
2SC4519 | |
transistor kd 2059
Abstract: KD 2059 s2e transistor NPN S2e kd 616 transistor npn d 2058 2SC4397-appiled 2SA1677 2SC4397
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2SA1677, 2SC4397 0D073Lj2 T-37-13 22ki2, 22ki2) 22kohms 22kohms) 2SA1677/2SC4397-appiled 2SA1677 transistor kd 2059 KD 2059 s2e transistor NPN S2e kd 616 transistor npn d 2058 2SC4397-appiled 2SC4397 | |
honeywell mramContextual Info: 52E D • 4SSlfl?2 - 0D00fl4D DBO ■ H0 N3 HONEYI i l EL L/ S S E C _ Honeywell Preliminary Military Products 16K x 1 NON-VOLATILE RAM HC7167 'T - 4 k '2 £ '0 £ ' FEATURES • Non-volatile and NDRO Non-destructive read out |
OCR Scan |
0D00fl4D 1x106 1x1014N/cm2 1x101 1x106rad honeywell mram | |
D 1413 transistor
Abstract: NTE74191 transistor K 1413 32 bit carry select adder code transistor a 1413 NTE74LS191 NTE74190 NTE74LS190 5.1 diagram NTE74
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16-Lead 14-LeadDIP 16-LeadDIP 256-Bit 64-Blt NTE74190 NTE74LS190 D 1413 transistor NTE74191 transistor K 1413 32 bit carry select adder code transistor a 1413 NTE74LS191 NTE74LS190 5.1 diagram NTE74 | |
pa 2030a
Abstract: 2SA1682
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OCR Scan |
00Q702Ã 2SA1682 T-31-/7 pa 2030a 2SA1682 | |
2sd209Contextual Info: SANYO SEMICONDUCTOR 2SB1394, 2SD2099 CORP SSE D • 7 cH 7 0 7 f c i 00072S3 3 T -3 3 -/7 - r 3 3 -0 5 % PNP/NPN Epitaxial Planar Silicon Transistors 2038 Compact Motor Driver Applications 3174 Features • Contains input resistance Ri , base-to-emitter resistance(RBE) |
OCR Scan |
00072S3 2SB1394, 2SD2099 2SB1394 2sd209 | |
2SA1731Contextual Info: SANYO SEMICONDUCTOR CÔRP SSE D 7 cH 7 0 7 b 0007CH1 2SA1731 1 T - 3 7 - I S PNP Epitaxial Planar Silicon Transistor 2044 High-Speed Switching Applications S3135A F e a tu re s • Adoption of FBET, MBIT processes • Large current capacity •Low collector-to-emitter saturation voltage |
OCR Scan |
711707b 2SA1731 T-37-/5 S3135A | |
IJ9 marking
Abstract: 2SC4396 2SA1676 27641 transistor npn d 2058 bau 95 BL 19 20-69 SANYO CE
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OCR Scan |
G0073LG 2SA1676, 2SC4396 47ki2, 47kohm3 47kohms) 2SAl676/2SC4396-applied 2SA1676 IJ9 marking 2SC4396 27641 transistor npn d 2058 bau 95 BL 19 20-69 SANYO CE | |
Contextual Info: SANYO SEMICONDUCTOR CORP 2SE D 7T=i707L GG0hñ3S 7 T-31-n 2SC377 4 20 18 A N PN Epitaxial Pianar Silicon Transistor UHF Low-Noise Wide-Band Amp Applications 1947B Applications . UHF low-noise ampi:ifiers, wide-band amplifiers Features . Small noise figure : NF=2.2dB typ f=0.9GHz . |
OCR Scan |
i707L T-31-n 2SC377 1947B |