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    S2E TRANSISTOR Search Results

    S2E TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    S2E TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    C4027

    Abstract: SC 2262 2SD4027 2sc4027-applied 2SA1552 2SC4027 500mAIB
    Contextual Info: SANYO S E M I C O N D U C T O R CORP S2E D i m 07b O D 0 7 0 bQ 1 2SA1552, 2SC4027 T ' 33' ì l T-33'01 P N P /N P N Epitaxial Planar Silicon Transistors 2044 High-Voltage Switching Applications 2262B Applications . Converters, inverters, color TV audio output


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    GQ070b0 2SA1552, 2SC4027 2SA1552/2SC4027-applied 2SA1552 C4027 SC 2262 2SD4027 2sc4027-applied 500mAIB PDF

    2SC4452

    Abstract: QVC5 Q60H
    Contextual Info: SANYO SEMICONDUCTOR CORP S2E D 7=^707!= G Q 0 7 1 D 1 Q T-3S -0 ? 2SC4452 • N P N Epitaxial Planar Silicon Transistor 20S9 High-Speed Switching Applications 2811 F e a tu re s • F ast switching speed • Low collector saturation voltage • High gain-bandwidth product


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    G007101 2SC4452 -T-35-07 2SC4452-applied QVC5 Q60H PDF

    Contextual Info: CALEX MANUFACTURING CO S2E D I IflllESG GDGIGBT 2^7 ICEX Models 166 and 167 Bridgesensors 2401 Stanwell Drive, Concord, CA 94520-4841 510 687-4411 (800)542-3355 BRIDGE POWER SUPPLY FAX: (510) 687-3333 7 1 -U -0 7 The bridge power supply is an adjustable regulated


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    PDF

    sj 2038

    Abstract: 2SD444 ic sj 2038 ANI 1015 IC ti 072 2SC1443 2SA1685 2SC4443 C4443 M685
    Contextual Info: SAN YO S E M I C O N D U C T O R CORP 2SA1685, 2SC4443 S2E D 7 cH 7 G 7 b OOD7D7Ö T T -3 7-09 ~r-3S-c~i * P N P /N P N Epitaxial Planar Silicon Transistors 2059 High-Speed Switching Applications 32öO F eatu res • Fast switching speed •High gain-bandwidth product


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    0OG707Ã 2SA1685, 2SC4443 2SA1685 sj 2038 2SD444 ic sj 2038 ANI 1015 IC ti 072 2SC1443 C4443 M685 PDF

    2sd444

    Abstract: 2SD44 1SA16
    Contextual Info: SAN YO S E M I C O N D U C T O R CORP 2SA1685, 2SC4443 S2E D 7 cH 7 G 7 b OOD7D7Ö T T -3 7-09 ~r-3S-c~i * P N P /N P N Epitaxial Planar Silicon Transistors 2059 High-Speed Switching Applications 32öO F eatu res • Fast switching speed •High gain-bandwidth product


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    2SA1685, 2SC4443 2SA1685 2sd444 2SD44 1SA16 PDF

    2SK968

    Abstract: 2SK9
    Contextual Info: SANYO S E M I C O N D U C T O R CORP 2SK968 S2E D • 7 en ? ü 7 b ODQb'IbB 5 ■ T - 3 I .- Z S # N -C h a n n e l Junction Silicon FET 2065 High-Frequency General-Purpose Amp Applications F e a tu re s • Small-sized package p erm ittin g 2SK968-applied se ts to be m ade sm a lle r an d slim m er


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    2SK968 2SK968-applied 2SK968 2SK9 PDF

    2SC3773

    Abstract: SANYO SS 1001
    Contextual Info: SANYO SEMICONDUCTOR CORP 25E D 7 ‘1c1 7 0 7 b 0 0 G b_ö3 1 T T -3/ -/7 2SC3773 NPN Epitaxial Pianar Silico n Transistor 2018A UHF OSC, MIX, Low-Noise Wide-Band Amp Applications 1946B Applications . UHF frequency converters, local oscillators, low-noise amplifiers, wide-band


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    n707b 2SC3773 1946B 2SC3773 SANYO SS 1001 PDF

    2SC2812

    Abstract: k 2057 3v61 2SA1179 600S8 T29 marking marking AJR 2SC28 AJR MARKING
    Contextual Info: SANYO SEMICONDUCTOR CORP 7T=]707t. DDD7B^t EBE D 2SA1179, 2SC2812 1 T -Z 1-I5 P N P /N P N Epitaxial Planar Silicon Transistors 2018A Low-Frequency General-Purpose Amp Applications 3218 F e a tu re s •Small-sized package perm itting the 2SA1179/2SC2812-applied sets to be made small and slim


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    2SA1179, 2SC2812 DDD73it T-29-/S 2SA1179/2SC2812-applied 2SA1179 2SC2812 k 2057 3v61 600S8 T29 marking marking AJR 2SC28 AJR MARKING PDF

    2SC4365

    Abstract: 2SC4402 SK200
    Contextual Info: SANYO SEMICONDUCTOR CORP SSE 7=1=1707^ D D O O böbT 2SC4402 2 T-3Ì-/7 NPN Epitaxial Planar Silicon Transistor 2059 V/U M IX, OSC, Low-Voltage Amp Applications 2755 Applications • VHFAJHF MIX/OSC, low-voltage high-frequency amplifiers Features fT=3.0GHz typ Vce = 3V


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    2SC4402-applied 2SC4365 2SC4402 SK200 PDF

    Contextual Info: SANYO SEMICONDUCTOR SEE CORP 2SA1687, 2SC4446 7=H707b D Q0Q75T7 T T -29-/5 # P N P /N PN Epitaxial Planar Silicon Transistors 2 059 Low<Frequency General-Purpose Amp Applications High V iEBO 3013 F e a tu re s . V ery sm all-sized package p erm ittin g th e 2SA1687/2SC4446-applied sets to be m ade sm all a n d slim


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    2SA1687, 2SC4446 H707b Q0Q75T7 2SA1687/2SC4446-applied 2SA1687 PDF

    pa 2030a

    Abstract: 25CC 2SA1622 FC103 2018Al IC 7443
    Contextual Info: SANYO SEMICONDUCTOR CORP 7^ 7 0 7 1 3 22E » 0QG7443 h T~ 21 'Oc{ FC103 PNP Epitaxial Planar Silicon Com posite Transistor 2066 Low-Frequency General-Purpose Amp, Differential Amp Applications 3111 F e a tu re s • Com posite type w ith 2 tran sisto rs contained in the CP package c u rre n tly in use, im p ro v in g th e


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    FC103 2SA1622, pa 2030a 25CC 2SA1622 2018Al IC 7443 PDF

    Contextual Info: SANYO SEMI CONDUCTOR CORP 22E D ? ci cl ? Q 7 b FC106 QQQ7 3 7 Q 5 T-35-21 NPN Epitaxial Planar Silicon Com posite Transistor 2067 Switching Applications with Bias Resistances R1=47kO, R2=47kO F e a tu re s • On-chip bias resistors (Ri = 47kQ,R2= 47kfl)


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    FC106 T-35-21 47kfl) FC106 2SC3395, 4139MO PDF

    SiEMENS PM 350 92

    Contextual Info: BSE D • 023b32Q 0 0 1 7 2 ^ 2 PNP Silicon Transistors for High Voltages S IE M E N S / SPCL-. 1 WtZIP SMBTA92 SEMICONDS_ SMBTA93 • High breakdown voltage • Low collector-emltter saturation voltage • Complementary types: SMBTA 42, SMBTA 43 NPN


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    023b32Q SMBTA92 SMBTA93 Q68000-A4338 Q68000-A4339 Q68000-A6479 Q68000-A6483 QQ17S^ SiEMENS PM 350 92 PDF

    bta 92

    Abstract: BTA43 smbta93 93 MARKING CODE NPN S2e bta 05
    Contextual Info: SIEMENS PNP Silicon Transistors for High Voltages SM BTA 92 SM BTA 93 • High breakdown voltage • Low coflector-emitter saturation voltage • Complementary types: S M B TA 42, SM BTA 43 NPN Type Marking Ordering Code (tape and reel) Pin (Contigui ation


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    Q68000-A6479 Q68000-A6483 OT-23 EHP0088J bta 92 BTA43 smbta93 93 MARKING CODE NPN S2e bta 05 PDF

    s2e transistor

    Abstract: S2E MARKING cp 035 sanyo vds5 2SK242 2SK1065
    Contextual Info: SANYO S E M I C O N D U C T O R 2SK1065 TTTTOTb ÜOOhTb? 2 SSE D CORP T - 3 1 ‘2 5 # N-Channel'Junction Silicon FET 2057 High-Frequency General-Purpose Amp Applications 2746 Features • Very small-sized package permitting 2SK1065-applied sets to be made smaller and slimmer


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    2SK1065 2SK1065-applied s2e transistor S2E MARKING cp 035 sanyo vds5 2SK242 2SK1065 PDF

    Contextual Info: SANYO SEMICONDUCTOR CORP SSE D 7 ^ 7 0 7 ^ 0007107 T -3 2SC4519 1 5 - I S . # 2018A N P N Epitaxial P la n a r S ilic o n T ran sis to r High-Speed Switching Applications 3133 Features . Adoption of FBET process • Low collector-to-emitter saturation voltage


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    2SC4519 PDF

    transistor kd 2059

    Abstract: KD 2059 s2e transistor NPN S2e kd 616 transistor npn d 2058 2SC4397-appiled 2SA1677 2SC4397
    Contextual Info: SANYO SEMICONDUCTOR 2SA1677, 2SC4397 CORP 2EE D 7 T c170?fci 0D073L. 2 b T-37-13 T-3S-H « * P N P /N P N Epitaxial P lan ar S ilic o n T ran sis to rs 2059 Switching Applications with Bias Resistances R1=22ki2, R2=22kQ 2765 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit


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    2SA1677, 2SC4397 0D073Lj2 T-37-13 22ki2, 22ki2) 22kohms 22kohms) 2SA1677/2SC4397-appiled 2SA1677 transistor kd 2059 KD 2059 s2e transistor NPN S2e kd 616 transistor npn d 2058 2SC4397-appiled 2SC4397 PDF

    honeywell mram

    Contextual Info: 52E D • 4SSlfl?2 - 0D00fl4D DBO ■ H0 N3 HONEYI i l EL L/ S S E C _ Honeywell Preliminary Military Products 16K x 1 NON-VOLATILE RAM HC7167 'T - 4 k '2 £ '0 £ ' FEATURES • Non-volatile and NDRO Non-destructive read out


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    0D00fl4D 1x106 1x1014N/cm2 1x101 1x106rad honeywell mram PDF

    D 1413 transistor

    Abstract: NTE74191 transistor K 1413 32 bit carry select adder code transistor a 1413 NTE74LS191 NTE74190 NTE74LS190 5.1 diagram NTE74
    Contextual Info: 52E D N T E ELECTRONICS INC b M B l B S 6 O D Q S im TÔT INTE g iT B S T T T E TRANSISTOR TRANSISTOR LOGIC) Look-Ahead Carry Generator 16-Lead DIP,See Dlag. 249 Dual Carry/Save Full Adder T - 4 3 ' Û' 14-Lead DIP,SeeDlag.247 Blnary-to-BCD Code 16-LeadDIP,SeeDlag.249


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    16-Lead 14-LeadDIP 16-LeadDIP 256-Bit 64-Blt NTE74190 NTE74LS190 D 1413 transistor NTE74191 transistor K 1413 32 bit carry select adder code transistor a 1413 NTE74LS191 NTE74LS190 5.1 diagram NTE74 PDF

    pa 2030a

    Abstract: 2SA1682
    Contextual Info: SANYO SEMICONDUCTOR S5E CORP D 7 cH 7 Q 7 t i O O 07 □ E ñ S 2SA1682 r - 5 /- /7 P N P Epitaxial P ia n a r S ilico n T ran sis to r 2018A TV Camera Deflection, High-Voltage Driver Applications 3011 F e a tu re s . H igh breakdow n voltage V q eo —300V


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    00Q702Ã 2SA1682 T-31-/7 pa 2030a 2SA1682 PDF

    2sd209

    Contextual Info: SANYO SEMICONDUCTOR 2SB1394, 2SD2099 CORP SSE D • 7 cH 7 0 7 f c i 00072S3 3 T -3 3 -/7 - r 3 3 -0 5 % PNP/NPN Epitaxial Planar Silicon Transistors 2038 Compact Motor Driver Applications 3174 Features • Contains input resistance Ri , base-to-emitter resistance(RBE)


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    00072S3 2SB1394, 2SD2099 2SB1394 2sd209 PDF

    2SA1731

    Contextual Info: SANYO SEMICONDUCTOR CÔRP SSE D 7 cH 7 0 7 b 0007CH1 2SA1731 1 T - 3 7 - I S PNP Epitaxial Planar Silicon Transistor 2044 High-Speed Switching Applications S3135A F e a tu re s • Adoption of FBET, MBIT processes • Large current capacity •Low collector-to-emitter saturation voltage


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    711707b 2SA1731 T-37-/5 S3135A PDF

    IJ9 marking

    Abstract: 2SC4396 2SA1676 27641 transistor npn d 2058 bau 95 BL 19 20-69 SANYO CE
    Contextual Info: S A N Y O S E M I C O N D U C T O R CORP 2SA1676, 2SC4396 E2E D 7 ,H 7 0 7 b G0073LG S T - 37-/3 -r-JS-U . PN P /N PN Epitaxial Planar Silicon Transistors 2059 Switching Applications with Bias Resistances R1=47kQ, R2=47ki2 2764 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit


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    G0073LG 2SA1676, 2SC4396 47ki2, 47kohm3 47kohms) 2SAl676/2SC4396-applied 2SA1676 IJ9 marking 2SC4396 27641 transistor npn d 2058 bau 95 BL 19 20-69 SANYO CE PDF

    Contextual Info: SANYO SEMICONDUCTOR CORP 2SE D 7T=i707L GG0hñ3S 7 T-31-n 2SC377 4 20 18 A N PN Epitaxial Pianar Silicon Transistor UHF Low-Noise Wide-Band Amp Applications 1947B Applications . UHF low-noise ampi:ifiers, wide-band amplifiers Features . Small noise figure : NF=2.2dB typ f=0.9GHz .


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    i707L T-31-n 2SC377 1947B PDF