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    S2A SOT23 Search Results

    S2A SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAS16
    Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Datasheet
    BAV99
    Toshiba Electronic Devices & Storage Corporation Switching Diode, 100 V, 0.215 A, SOT23 Datasheet
    TBAV70
    Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Datasheet
    TBAW56
    Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Datasheet
    BAV70
    Toshiba Electronic Devices & Storage Corporation Switching Diode, 100 V, 0.215 A, SOT23 Datasheet

    S2A SOT23 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    power 22E

    Abstract: TRANSISTOR S2A s2A SOT23 1N916 SMBT3904 SMBT3906 H12E sot23 transistor marking 12E IC MARKING NS-05 marking s2A
    Contextual Info: SMBT3906 PNP Silicon Switching Transistor 3  High DC current gain: 0.1 mA to 100 mA  Low collector-emitter saturation voltage  Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings


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    smbt3906smbt3904vps05161ehp00773+11ehp00768aug-20-2001ehp00769power 22etransistor s2as2a sot231n916h12esot23 transistor marking 12eic marking ns-05marking s2a PDF

    marking code s2a SOT23

    Abstract: smbt3906 MMBT3906 infineon
    Contextual Info: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E


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    smbt3906/mmbt3906smbt3904/mmbt3904+4vps05161marking code s2a sot23smbt3906mmbt3906 infineon PDF

    power 22E

    Abstract: TRANSISTOR S2A SMBT3906 1N916 SMBT3904
    Contextual Info: SMBT3906 PNP Silicon Switching Transistor 3  High DC current gain: 0.1 mA to 100 mA  Low collector-emitter saturation voltage  Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings


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    smbt3906smbt3904vps05161ehp00773+6ehp00768nov-30-2001ehp00769power 22etransistor s2a1n916 PDF

    MMBT3906

    Abstract: SMBT3906 EHP00772 TRANSISTOR S2A 1N916 MMBT3904 SMBT3904
    Contextual Info: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E


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    smbt3906/mmbt3906smbt3904/mmbt3904+9vps05161ehp00771ehp00768jul-28-2003smbt3906ehp00772transistor s2a1n916smbt3904 PDF

    Contextual Info: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E


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    smbt3906/mmbt3906smbt3904/mmbt3904+1vps05161 PDF

    3906

    Abstract: transistor 3906 k0300 H12E 1N916 EHP00772 3906 pnp ic power 22E
    Contextual Info: SMBT 3906 PNP Silicon Switching Transistor 3  High DC current gain: 0.1mA to 100mA  Low collector-emitter saturation voltage  Complementary type: SMBT 3904 NPN 2 1 Type Marking SMBT 3906 s2A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings


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    100mavps05161ot-23ehp00772+11ehp00773oct-14-1999ehp00768ehp007693906transistor 3906k0300h12e1n9163906 pnpic power 22e PDF

    s2A SOT23

    Abstract: marking s2A sot23 SMBT3906U
    Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


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    smbt3906mmbt3906smbt3906ssmbt3906u+6smbt3904mmbt3904smbt3906s/smbt3906/s2a sot23marking s2a sot23 PDF

    SMBT3906U

    Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


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    smbt3906mmbt3906smbt3906ssmbt3906u+4smbt3904mmbt3904smbt3906s/smbt3906/ PDF

    TRANSISTOR S2A

    Abstract: SMBT3906U transistor marking s2a s2A SOT23 MMBT3906 TP MMBT3904 MMBT3906 SMBT3904 SMBT3904S SMBT3906
    Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


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    smbt3906mmbt3906smbt3906ssmbt3906u+10smbt3904mmbt3904smbt3904ssmbt3906s/ueha07175smbt3906/transistor s2atransistor marking s2as2a sot23mmbt3906 tp PDF

    transistor marking S2A

    Abstract: SMBT3906U
    Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


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    smbt3906mmbt3906smbt3906ssmbt3906u+7smbt3904mmbt3904smbt3904ssmbt3906s/ueha07175smbt3906/transistor marking s2a PDF

    transistor marking s2a

    Abstract: SMBT3906U MMBT3904 MMBT3906 SMBT3904 SMBT3904S SMBT3906 SMBT3906S s2A SOT23 infineon marking code B2 SOT23
    Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low colltector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


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    smbt3906mmbt3906smbt3906ssmbt3906u+9smbt3904mmbt3904smbt3904ssmbt3906s/ueha07175smbt3906/transistor marking s2as2a sot23infineon marking code b2 sot23 PDF

    SMBT3906U

    Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


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    smbt3906mmbt3906smbt3906ssmbt3906u+6smbt3904mmbt3904smbt3904ssmbt3906s/ueha07175smbt3906/ PDF

    CH3906GP

    Abstract: SOT-23 marking S2A
    Contextual Info: CHENMKO ENTERPRISE CO.,LTD CH3906GP SURFACE MOUNT PNP Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage Max.=40V . * High saturation current capability.


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    ch3906gpot-23200masot-23 marking s2a PDF

    Contextual Info: Enpirion Power Evaluation Board User Guide EV1340QI PowerSoC Enpirion EV1340QI 5A DC/DC Converter with Integrated Inductor Evaluation Board Introduction Thank you for choosing Altera Enpirion power products! This user guide is applicable to evaluation boards with part number 05043 Rev A


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    ev1340qi PDF

    H12E

    Abstract: h11E 3906 3906 TRANSISTOR npn transistor 3906 s2A SOT23 PNP 3906 SOT23 3904 SOT
    Contextual Info: PNP Silicon Switching Transistor SMBT 3906 High DC current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Complementary type: SMBT 3904 NPN ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBT 3906


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    q68000-a4417ot-23h12eh11e+639063906 transistor npntransistor 3906s2a sot23pnp 3906 sot233904 sot PDF

    PNP marking NY sot-223

    Abstract: TRANSISTOR S2A 2F PNP SOT23 2SA1036K s2A SOT23 marking NY sot-223 transistors sot-223 transistor circuit s2A PART MARKING SOT-23 TRANSISTOR CH3906
    Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector to Emitter Voltage VCEO V PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Voltage Power Gain Outline Collector to Dissipation Bandwidh No. Emitter Collector Current DC Current Gain


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    chta64xcht3906xcht2907xcht4033x+16cht5401xchta92xchta64zcht3906zcht2907zcht2955zpnp marking ny sot-223transistor s2a2f pnp sot232sa1036ks2a sot23marking ny sot-223transistors sot-223transistor circuits2a part marking sot-23transistor ch3906 PDF

    n13 sot 23

    Contextual Info: HUF76113T3ST Data Sheet June 1999 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


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    huf76113t3stn13 sot 23 PDF

    3906

    Abstract: sot transistor 3906 transistor 3906 BT3904 transistor pnp 3906 3904 SOT SAW MARKING CODE SOT-23 transistor 3906 SOT23
    Contextual Info: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High D C current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SM B T 3904 NPN Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1)


    OCR Scan
    q68000-a4417ot-23ehp0q77q3906+7sot transistor 3906transistor 3906bt3904transistor pnp 39063904 sotsaw marking code sot-23transistor 3906 sot23 PDF

    Contextual Info: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3904 NPN Type Marking Ordering Code (tape and reel) PinCtonfigu ration 1 2 3 Package1)


    OCR Scan
    q68000-a4417ot-23ehp00770ehp00772+4s35bo01ees4sa235b05012254b PDF

    Zener Diode minimelf

    Abstract: 3 Ampere zener diode bz84c DIODE S1M DO-214AC S1m diode S100 NPN Transistor SMA SMB diode guide TVS diode MELF Zener Diode SOT-23 10 Ampere Schottky bridge
    Contextual Info: HIGH QUALITY FLAT PACK RECTIFIERS The Surge line of glass passivated silicon SMA/SMB/SMC surface mount flat pack rectifiers provide greater PC board stability over traditional MELF packages, making these discrete components ideal for design engineers who need high reliability in a tight package.


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    5smcj170ca5smcj170ado-214acdo-214ab+150smcj170ca0smcj170abas16bas21bav70zener diode minimelf3 ampere zener diodebz84cdiode s1m do-214acs1m diodes100 npn transistorsma smb diode guidetvs diode melfzener diode sot-2310 ampere schottky bridge PDF

    Contextual Info: FEATURES Low noise preamplifier Ultrasound amplifiers PLL loop filters High performance ADC drivers DAC buffers NC 1 8 DISABLE –IN 2 7 +VS +IN 3 6 OUT –VS 4 5 NC Figure 1. 8-Lead SOIC ADA4897-1 8 VS = ±5V 7 6 5 4 3 2 1 1 10 100 1k 10k 100k 1M 5M FREQUENCY (Hz)


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    ada4897-1/ada4897-2ada4896-2/ada4897-1/ada4897-2ada4897-1ot-23+110-lead PDF

    Contextual Info: FUNCTIONAL BLOCK DIAGRAM FEATURES Low noise preamplifier Ultrasound amplifiers PLL loop filters High performance ADC drivers DAC buffers 8 DISABLE 7 +VS +IN 3 6 OUT –VS 4 5 NC 8 VS = ±5V 7 6 5 4 3 2 1 1 10 100 1k 10k 100k 1M 5M FREQUENCY Hz GENERAL DESCRIPTION


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    ada4897-1ada4896-2/ada4897-1/ada4897-2ot-2310-lead+1cp-8-11 PDF

    sot23 transistor marking 12E

    Abstract: TRANSISTOR S2A CH3906PT power 22E 1N916 SOT-23 marking S2A marking s2A sot23
    Contextual Info: CHENMKO ENTERPRISE CO.,LTD CH3906PT SURFACE MOUNT PNP Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage Max.=40V . * High saturation current capability.


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    ch3906ptot-23200ma1n916+5sot23 transistor marking 12etransistor s2apower 22esot-23 marking s2amarking s2a sot23 PDF

    ADA4896-2

    Abstract: ultrasound HV MUX ADG633 ADA4897-1 D0944
    Contextual Info: FEATURES Low noise preamplifier Ultrasound amplifiers PLL loop filters High performance ADC drivers DAC buffers NC 1 8 DISABLE –IN 2 7 +VS +IN 3 6 OUT –VS 4 5 NC Figure 1. 8-Lead SOIC ADA4897-1 8 VS = ±5V 7 6 5 4 3 2 1 1 10 100 1k 10k 100k 1M 5M FREQUENCY (Hz)


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    ada4897-1/ada4897-2ada4896-2/ada4897-1/ada4897-2ada4897-1ot-23+510-leadada4896-2ultrasound hv muxadg633d0944 PDF