S268 Search Results

Contextual Info: PHOTODIODE Si photodiode S2684-254 Photodiode with interference filter for monochromatic light 254 nm detection S2684-254 uses an interference filter as its window to provide high sensitivity only to monochromatic light. The spectral response width is as

Contextual Info: PHOTODIODE Si photodiode S2684-254 Photodiode with interference filter for monochromatic light 254 nm detection S2684-254 uses an interference filter as its window to provide high sensitivity only to monochromatic light. The spectral response width is as

Contextual Info: S268P Vishay Semiconductors Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.

CD 8403

Abstract: S268P
Contextual Info: TELEFUNKEN Semiconductors S 268 P Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides

S2684-254

Abstract: u 741 SE-171
Contextual Info: PHOTODIODE Si photodiode S2684-254 Photodiode with interference filter for monochromatic light 254 nm detection S2684-254 uses an interference filter as its window to provide high sensitivity only to monochromatic light. The spectral response width is as

S268P

Contextual Info: Temic S e m i c u n S268P duc t ors Silicon PIN Photodiode Array Description S 2 6 8 P is a s ilic o n P IN p h o to d io d e a rra y in a in lin e c o n fig u ra tio n . T h re e s in g le p h o to d io d e c h ip s w ith a c o m m o n c ath o d e a re m o u n te d in a vvaterclear 8 pin dual in line p a ck a g e .

Contextual Info: SN74ALVC16820 3.3-V 10-BIT FLIP-FLOP WITH DUAL OUTPUTS S C A S268 - M A RCH 1993 - RE V IS E D M ARCH 1994 DGG OR DL PACKAGE TOP VIEW 10Ë [ 1 Supports Unregulated Battery Operation Down to 2.7 V ] CLK 1Q1 [ 2 55 ]D 1 1Q2 [ 3 [ 4 54 ]N C 53 ] g n d g n d

S268P

Contextual Info: S268P Vishay Telefunken Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.

1S2688

Abstract: 1S2687 1SV74 1SV53A 1sv50 1SV88 1SV73 1s2689 1SV113 1SV53-A
Contextual Info: - 186 - £ « tí: f i * £ tè * ì B 8 i P Ct.Cj* pF (mW) * 1S2209 am 1 S2339 = L - ' / y 1 S2686 1 S2687 * = -'/> 1 S2688 ü S2689 - Ct (Vl)/Ct (V2) Qmin (V) (V) m in typ ma x 30 10. 3 2.0 11. 5 12. 9 2. 5 3 25 AFC 15 7 2.0 10 14 2. 5 4 25 AF C 20

Contextual Info: PHOTODIODE Si photodiode S2684-254 Photodiode with interference filter for monochromatic light 254 nm detection S2684-254 uses an interference filter as its window to provide high sensitivity only to monochromatic light. The spectral response width is as

S268P

Abstract: Photodiode Array
Contextual Info: S268P Vishay Telefunken Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.

S2684-340

Abstract: S2684-500 S2684-254 S2684-405 S2684-520 S2684-560 S2684-650 S2684-700 p650 l
Contextual Info: PHOTODIODE Siフォトダイオード S2684-254 単一波長 254 nm 検出用干渉フィルタ付のフォトダイオード 窓材に干渉フィルタを採用し単一波長のみに高感度をもつ受光素子です。感度波長のスペクトル幅は10 nm (FWHM)と極めて狭く、迷

S268P

Contextual Info: S268P Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant

s2688

Abstract: MM5837 noise generator pseudo-random noise generator negative ion generator "noise generator" S2688 / MM5837
Contextual Info: AMI * A Subsidiary of Gould Inc. S2688 ^ Features General Description □ □ □ □ □ □ □ □ □ The S2688 noise generator circuit is fabricated in P-Channel ion implanted MOS technology and sup­ plied in an eight-lead dual in-line plastic package. The

S268P

Abstract: silicon photodiode array
Contextual Info: S268P Vishay Telefunken Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.

S2684-500

Contextual Info: Si photodiode S2684-254 Photodiode with interference filter for monochromatic light 254 nm detection The S2684-254 uses an interference filter as its window to provide high sensitivity only to monochromatic light. The spectral response width is as narrow as 10 nm (FWHM), allowing accurate photometry without being adversely influenced by stray

M208F

Contextual Info: MICROWAVE SILICON COMPONENTS Case styles M208f Cb=0.12pF S268/W1 F 0.06 E 0.55 D 5 0.1 0.65 .0024 Cb=0.2pF .024 .035 0.51 0.60 .020 .024 ∅ 2.44 ∅ 2.64 .096 DIA .104 DIA .026 .200 E 0.21 0.31 .008 .012 D 1.71 2.00 .067 .079 .022 9.8 10.2 .392 .408 1.35

S2684-254

Abstract: S2684-340 S2684-405 S2684-500 S2684-520 S2684-560 S2684-650 S2684-700
Contextual Info: HAMAMATSU PRELIMINARY DATA Apr. 1997 Si PHOTODIODES S2684 SERIES With a filter for monochromatic light detection FEATURES •D etects monochromatic light with high sensitivity • 8 types are available. Peak sensitivity wavelength: 254 to 700 nm •L o w dark current

1S2688

Abstract: 1SV53A 1SV50 1SV74 1SV73 1SV68 1SV88 1SV113 1S2687 1SV111
Contextual Info: - 186 - £ tí: fi * £ tè P Vr m V r « mW * 1S2209 am 1 S2339 1 S2686 =L-'/y 1 S2687 * = - '/> 1 S2688 ü S2689 1SV50Í1) 1SV50 1 SV50S - Ct (Vl)/Ct (V2) ¡mm Qmin («) V r (V) f(MHz) {fi A) V r (V) 25 1. 5 * 50 1 25 4 50 0. 4 2.8 2 10 10 2. 2 1 10

S268P

Abstract: silicon photodiode array
Contextual Info: S268P Vishay Semiconductors Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.

S2684-560

Abstract: KSPDB0135EB S2684-650 S2684-700 S2684-254 S2684-340 S2684-405 S2684-500 S2684-520
Contextual Info: PHOTODIODE Si photodiode S2684-254 Photodiode with interference filter for monochromatic light 254 nm detection S2684-254 uses an interference filter as its window to provide high sensitivity only to monochromatic light. The spectral response width is as

DH292

Contextual Info: POWER GENERATION DIODES Silicon multiplier varactor SILICON MULTIPLIER VARACTORS Description These silicon multiplier varactors from 0.2 to 25 GHz are designed for harmonic generation of high power levels (stack configuration) and/or at high multiplication orders.

7 segment display LTS 542

Abstract: lts 542 7430 ic data sheet lts 542 pin diagram S931A 7 segment display LTS 543 IC 8038 function generator lts 543 data sheet lts 543 pin configuration lts 543 pin diagram
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

S4112

Abstract: S25920
Contextual Info: Other Types of Si Photodiode S i P h o t o d i o d e s W it h P r e - a m p lif ie r Atfive Area TyceNo F oas SSRStMfy Waueiength Spectral Response Rango X dm rnm) 190 to 1100 S1406-04 320 to 1100 2.4x2.4 S 1406-06 SSS80 960 «2.54 320 to 1060 920 High-speed response