S21I2 Search Results

LT5839

Abstract: LT1839
Contextual Info: MOTOROLA SC CXSTRS/R 4bE F M O TO RO LA D • b3b?2SM 00=14230 T ■ MOTb _ - r - t t - n ■ SEM IC O N D U C T O R TECHNICAL DATA LT5839 The RF Line PIMP S ilic o n H igh Frequency T ra n sisto r Iq = - 300 mA HIGH FREQUENCY

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

mrf571

Abstract: MRF5711LT1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR571LT1 MRF571 MRF5711LT1 NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front-end amplifiers and low-noise VCO's. Available in a surface-mountable plastic packages. This

Contextual Info: MSA-0835, -0836 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers HEW LETT PACKARD Features • • • • 35 micro-X Package1 Usable Gain to 6.0 GHz High Gain: 32.5 dB typical at 0.1 GHz 23.0 dB typical at 1.0 GHz Low Noise Figure: 3.0 dB typical at 1.0 GHz

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

microwave transistor siemens bfp 420

Abstract: 4144 lH21l BFP450 siemens MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT doppler radar SMX-1 BFP450 transistor s parameters noise sot-343 as
Contextual Info: APPLICATIONS DISCRETE SEMICONDUCTORS Jakob Huber ● Gerhard Lohninger RF measurements on SIEGET bipolar transistors: Predicting performance straight from the wafer Multistage measurements are intended to ensure unrestricted operation of RF transistors. But until recently,

jis z 0237

Abstract: Q218
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small-signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.

mrf9411

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed or use in high gain, low noise small-signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.

LG CRT

Contextual Info: 1EE D I fc.3t.7ESM QDÖ7220 S | MOTORCLA SC MOTOROLA T-?3>0r XSTRS/R F SEM IC O N D U C T O R TECHNICAL DATA LT1739 The RF Line N P N S ilic o n H ig h F requ ency T ra n sisto r f j = 900 M H z M IN HIGH FR E Q U EN C Y T R A N S IS T O R N P N SILIC O N

5943 MOTOROLA

Abstract: MRF5943 motorola 1550
Contextual Info: MOTOROLA Order this document by MRF5943/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor MRF5943, R1, R2 . . . designed for amplifier, oscillator or frequency m ultiplier applications in industrial equipment. Suitable for use as a Class A, B or C output driver or

1S2112

Contextual Info: M AXIM UM RATINGS Symbol MPS536 Unit C o lle c to r -E m itte r V o lta g e Rating v CEO -1 0 Vdc C o lle c to r-B a s e V o lta g e VCBO -1 5 Vdc E m itte r-B a s e V o lta g e Veb o -4 .5 Vdc C o n tin u o u s >C -3 0 mA P o w e r D is s ip a tio n iv T a = 25°C