S16X Search Results

S16XXXH

Contextual Info: r r z ^ 7# S G S -T H O M S O N RfflDOœiHitSiriHÎOiDOS S 16xxxH SCR FEATURES • It rm s = 16A V d r m = 200V t o 800V ■ High surge current capability ■ DESCRIPTION The S16xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose

Contextual Info: f Z 7 SGS-THOMSON ^ 7# MœmioroiMDiES S16xxxH SCR FEATURES • I t rms = 16A - V Drm = 200V to 800V ■ High surge current capability DESCRIPTION The S16xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose

S16XXXH

Contextual Info: S16xxxH  SCR FEATURES IT RMS = 16A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S16xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated

Contextual Info: < f v D P S16X 16 16K X 16 CMOS SRAM MODULE DESCRIPTION: The DPS 16X16 is part o f a new family of high speed S tatic RAM m odules d e ve lo p e d by Dense-Pac Microsystems, Inc. The S16X16 uses advanced packaging concepts which mount four LCC memory devices on a single multilayer ceramic substrate. The

Contextual Info: 16 Megabit CMOS SRAM □PM Dense-Pac Microsystems. Inc. ^ D PS1M S16P/D PS1M S16XP DESCRIPTION: The DPS1MS16P/XP is a 16 megabit, low-power static RAM module. The module is comprised of sixteen 128K X 8 SRAM devices and two high-speed decoders. The DPS1MS16P/XP

Rthv

Abstract: R1124NS16X R1124NS18X 24NS1
Contextual Info: • n w i t s i u u n Date:- 20 Jun, 2001 u e Data Sheet Is s u e :-1 Distributed Gate Thyristor Types S16X to R1124NS18x Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V drm R e p e titive p e a k o ff-sta te vo lta g e , note 1 160 0-1 8 0 0

Contextual Info: mos IMS IMS IMS IMS IMS IMS 1605: 6 4 K x 1 1625: 1 6 K x 4 1629: 16K x 4 with Output Enable / 1626/7:16K x 4 with Separate I/Os 1635: 8K x 8 1695: 8K x 9 FEATURES • INMOS' Very High Speed Double Metal CMOS • Advanced Process-1.2 Micron Design Rules • 64K Bit Devices

Contextual Info: DPZ2MS16P □PM Dense-Pac Microsystems, Inc. O 2048K X 16 FLASH MEMORY MODULE PRELIMINARY D ESC RIPTIO N : The DPZ2M S16P is a 32 megabit C M O S FLASH Electrically Erasable and Programmable nonvolatile memory module. The module is built with sixteen 256K x 8 FLASH memory devices

DS1213

Abstract: sram book dallas DS2010 dallas ds1213c
Contextual Info: sionaodd Adoi/\i3i/\i http://www.dalsemi.coml - For the latest information about every product we make, visit our World Wide Web site. You’ll find the most complete, up-to-date information about our products available seven days a week, 24 hours a day. Here’s just some of what you’ll find:

TAA 755

Contextual Info: □P M D P S 1 6 X Í 7 Dense-Pac Microsystems, Inc. 16K X 16 CMOS SRAM MODULE O D E SC R IPT IO N : The D S16X17 is part of a new family of high speed static R A M m odules d e v e lo p e d by Dense-Pac Microsystems, Inc. The S16X17 uses advanced packaging concepts which mount four LCC memory

R1124NS

Abstract: FAST SWITCHING THYRISTOR 1000A
Contextual Info: WESTCODE Date:- 20 Jun, 2001 Data Sheet Issue:- 1 Distributed Gate Thyristor Types S16x to R1124NS18x Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS 1600-1800 V VDRM Repetitive peak off-state voltage, note 1 VDSM Non-repetitive peak off-state voltage, (note 1)

oscillator 50mhz smd

Abstract: smd duc diode smd transistor cy S8002
Contextual Info: RICOM P PE PrO Programmable Clock Oscillator Technical Data Description A crystal controlled, HCMOS/TTL compatible oscillator with an internal programming feature that allows SaRonix to supply most frequencies in the 1 to 125MHz range. This technology significantly reduces lead-times from weeks

PS1M

Contextual Info: □PM Dense-Pac Microsystems, Inc. DPS1M S16P 1024K X 16 CM OS SRAM MODULE O DESCRIPTION: The D P S1 M S1 6 P is a 16 megabit, low-power static RA M module. The module is comprised of sixteen 128K X 8 SRA M devices and two high-speed decoders. The D PS1 M S1 6 P can

Contextual Info: □pìriE 32 Megabit CMOS Flash EEPROM Dense-Pac Microsystems, Inc DPZ2MS16P/S16XP DESCRIPTION: The DPZ2M S16P/XP is a 32 megabit CM OS FLASH Electrically Erasable and Programmable nonvolatile memory module. The module is built with sixteen 256K x 8 FLASH memory devices

Contextual Info: □PM Dense-Pac Microsystems, Inc. S16X16 16K X 16 C M O S SRAM M O D U LE o D ESC R IP TIO N : The D S16X16 is part of a new family of high speed S tatic RA M m odules d e velo p e d by D ense-Pac Microsystems, Inc. The S16X16 uses advanced packaging concepts which mount four LC C memory

Contextual Info: RICOM P PE Crystal Clock Oscillator 3.3V & 5V, ACMOS, TTL, SMD Technical Data S1903 / S1950 Series Frequency Range: 32 MHz to 125 MHz S1903 as rated 80+ MHz to 125 MHz (S1950) as rated Up to 160MHz available, contact SaRonix for details Frequency Stability:

Contextual Info: RICOM P PE PrO Programmable Clock Oscillator Technical Data Description A crystal controlled, HCMOS/TTL compatible oscillator with an internal programming feature that allows SaRonix to supply most frequencies in the 1 to 125MHz range. This technology significantly reduces lead-times from weeks

700-FEM

Contextual Info: TITLE: UNLESS OTHERWISE NOTED REV. AA DIMENSIONS ARE IN INCHES ONE PLACE DECIMALS ± NO. OF POS. x .03937 [1.00] ±.010 [.25] (SEE NOTE 1) TWO PLACE DECIMALS ± IS E] B B ANGLES ±3” NO. OF POSITIONS -02 THRU -50 (UNSHROUDED) (PER ROW) -05 THRU -46 (SHROUDED)

S16128

Contextual Info: S1603-8 thru S1624-8 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1916, REV. - TVS ARRAY SERIES FEATURES ü ü ü ü ü ü SO-16 Protects 3.3, 5, 12, 15, 24 V Components Unidirectional Provides Electrically Isolated Protection 300 W @ 8/20 µs Protects 8 Lines

Contextual Info: □PM D PS 16 X17 Dense-Pac Microsystems, Inc. 16KX 16 CM OS SRAM MODULE O D ESCRIPTIO N: The S16X17 is part of a new family of high speed static RAM modules developed by Dense-Pac Microsystems, Inc. The S16X17 uses advanced packaging concepts which mount four LCC memory

TNY 176 PN EQUIVALENT

Abstract: AY-5-8100 TFK 7 segment displays AY5-8100 7-segment display tfk FTC S211 TNY 177 PN EQUIVALENT saa1130 TNY 176 PN AY-3-8500
Contextual Info: 1977 DATA CATALOG f m ELECTRONICS G E N E R A L I N S T R U M E N T C O R P O R A T I O N » M IC R O E L E C T R O N I C S r I' i i INDEX/GENERAL INFORMATION. CALCULATORS. CLOCKS.

AA423

Contextual Info: □PM Dense-Pac Microsystems, Inc. DPZ2MS16P 2048K X 16 FLASH MEMORY MODULE O PRELIMINARY DESCRIPTION: The D P Z2M S 16P is a 32 m e gabit C M O S FLASH Electrically Erasable and Program m able no nvolatile m e m ory m odule. The m o d u le is b u ilt w ith sixteen 256K x 8 FLASH m e m ory devices

sgm2122

Contextual Info: SGM2122 Dual, Low Dropout, 250mA LDO Regulators GENERAL DESCRIPTION FEATURES The SGM2122 is a dual, low-power, low-dropout, CMOS y Highly Accurate: ±2% linear voltage regulator. It operates from a 2.5V to 5.5V y Ultra-Low Dropout Voltage: input and delivers up to 250mA at each channel.

S16X

Abstract: S1624-8-G RS-449 S1603-8-G
Contextual Info: S1603-8-G thru S1624-8-G SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4615, REV. - Green Products TVS ARRAY SERIES FEATURES SO-16 ü Protects 3.3, 5, 12, 15, 24 V Components ü Unidirectional ü Provides Electrically Isolated Protection ü 300 W @ 8/20 µs