RTHV Search Results

abb bov 660

Abstract: BOD 1-04 Abb breakover diode BOV1000-S dsas16u ABB bod 1-11 dsas 5-0 dsas10u DSAS5U dsas
Contextual Info: A B B SEMI CONDUCTORS AG BOD • Breakover Diodes Version Type Ordering number Bestellnummer Num. de commande BOD 1-04 -05 -06 -07 -08 -09 -10 3 flE P V bo Ibo V V Tvj=25°C Ta =50°C mA A 400 500 600 700 800 900 1000 ± 50 <15 Iavm 1100 1200 1300 1400 1500

MKA677

Abstract: MKA670 82C250 PCA82C250 PCA82C250T MKA677-1 MKA675
Contextual Info: P h ilips Sem icon du ctors Prelim inary specification C A N controller interface PCA82C250 FEATURES A PPLICATIO NS • Fu lly com p atible with the “ISO/DIS 11898 ” standard • H igh -spee d a p p lica tio n s up to 1 M baud in cars. • High sp e e d (up to 1 M baud)

NTE7162

Abstract: 220nf capacitor
Contextual Info: NTE7162 Integrated Circuit DC−Coupled Vertical Deflection and East−West Output Circuit Description: The NTE7162 is a power circuit in a 13−Lead Staggered SIP type package designed for use in 90° and 110° color deflection systems for field frequencies of 50Hz to 120Hz. The circuit provides a DC

fisher ca-65

Contextual Info: SALES REPRESENTATIVES U.S. and Canada " 'S ALABAMA N-Tech Sales 190 Lime Quarry Road, Suite 106M Madison, AL 35758 256-464-0033/Fax: 256-464-9909 ALASKA Doran Sales Associates 134 SE Fifth Street Hillsboro, OR 97123 503-640-4500/888-31 -DORAN Fax: 503-640-4555

syntron rectifier

Abstract: 2CL2FP SM3F HGUF10 WESTINGHOUSE RECTIFIERS ct 4a05 4a05 Syntron syntron diode 2CL106
Contextual Info: B D O O O N TH O T C R O EM P Y O VE Manufacturers of • ■ ■ ■ ■ CAN’T FIND WHAT YOU NEED? CALL US. CUSTOM DESIGN IS OUR SPECIALTY. HIGH VOLTAGE DIODES MOVS TVSS DEVICES SELENIUM SUPPRESSORS SILICON CARBIDE SUPPRESSORS ■ HIGH VOLTAGE HIGH CURRENT ASSEMBLIES

thyristor SH100

Abstract: SH100
Contextual Info: HIGH-SPEED THYRISTOR SILICON DIFFUSED TYPE SH100 D,F,G,J,L 21A HIGH SPEED APPLICATIONS. Unit in mm FEATURES: . Repetitive Peak Off-State Voltage V DRM) ;200 ~ 8 0 0 V Repetitive Peak Reverse Voltage V r RM . Average On-State Current (Max.) . Turn-Off Time

BUSBAR calculation

Abstract: BUSBAR calculation datasheet rogers busbar Ansys led A copper busbar voltage drop i300a busbar design ansys BUSBAR Fz2400
Contextual Info: Thermal Properties of Power Terminals in High Power IGBT Modules A. Cosaert1, M. Beulque1, M. Wölz2, O. Schilling2, H. Sandmann2, R. Spanke2, K. Appelhoff2 1 2 Rogers NV, Gent, Belgium eupec GmbH, Warstein, Germany Abstract Power dissipation in the leads of IGBT modules has to be taken into account for modern inverter design. This is

schematic inductive proximity sensor

Abstract: heat sink design guide, IGBT NCDT3300 FP10R06WE3 eddy current measurements chip Micro-Epsilon schematic coil inductive proximity sensor easypim igbt Thermal grease
Contextual Info: The Thermal Heat Sink Interface of IGBT Modules w/o Base Plate A Comprehensive Experimental and Simulation Study P.Kanschat1, Th. Stolze1, D. Kreuzer1, R. Cordes2 1 Infineon Technologies AG, Max Planck Str.5, D-59581 Warstein Germany 2) University of Applied Sciences Südwestfalen, Campus Soest, Dept. Electrical Power Engineering,

Contextual Info: RS, RH, BCH AND RTH SERIES FIGURE 94 .25 .032 L .25 Dimensions are in inches. Avg. Forward Current Max. IFAVM@55°C mA milliamps 650 650 550 500 500 1500 1500 1250 1250 1250 25 25 25 25 25 25 25 25 25 25 25 100 100 100 100 100 100 100 100 100 100 100 100

BCHV35

Abstract: RSUFH42 RHV30 BCHV50
Contextual Info: HIGH VOLTAGE AXIAL LEAD RECTIFIER ASSEMBLY – BCH, RH, RS & RTH SERIES FIGURE 6 .25 .032 L .25 Dimensions are in inches. Avg. Forward Current Max. IFAVM@55°C mA milliamps 650 650 550 500 500 1500 1500 1250 1250 1250 25 25 25 25 25 25 25 25 25 25 25 100

4A05 diode

Abstract: ct 4a05 4a05 equivalent components of diode her208 diode 4a05 SP5LFG SM3FG 2CL2FP HVW3 diode SM3F
Contextual Info: HIGH VOLTAGE LOW CURRENT RECTIFIERS – NV, G SERIES FIGURE 24 NV•FP Series FIGURE 0.080 Lead Diameter 0.020 0.12 Max. FIGURE 2 G•FS Series G•FG Series 1” Min. FIGURE 4 0.120 Lead Diameter 0.024 1” Min. D Lead Diameter 0.023 1” Min. 3 L Max. G•GE & G•PE Series

rthv80

Abstract: RTHV60 BCHV60 RTHV45 RTHV25 RHV35 rthv20 RHV30 RTHV40 RHV15
Contextual Info: HIGH VOLTAGE AXIAL LEAD RECTIFIER ASSEMBLY – BCH, RH, RS & RTH SERIES FIGURE 6 .25 .032 L .25 Dimensions are in inches. Avg. Forward Current Max. IFAVM@55°C mA milliamps 650 650 550 500 500 1500 1500 1250 1250 1250 25 25 25 25 25 25 25 25 25 25 25 100

NTE7131

Contextual Info: NTE7131 Integrated Circuit DC–Coupled Vertical Deflection Circuit Description: The NTE7131 is an integrated circuit in a 9–Lead SIP type package designed for use in 90° and 110° color deflection systems for field frequencies of 50 to 120Hz. The circuit provides a DC driven vertical

OA41

Abstract: LO34 on222 transistor VGFX20K lo4b OA43 OAI221 VGFX100K VGFX40K 4 BIT ADDER
Contextual Info: VITESSE FX Family Data Sheet High Performance FX Family Gate Arrays Features • 20,000-350,000 Raw Gates, Channelless Array Architecture • Sea-of-Gates Architecture and Four Layer Metal for High Density • Array Performance - Typical gate delay: 97 ps @ 0.19 mW

LT 816

Contextual Info: r z j S G S -T H O M S O N ^ 7# IlD ÈlKffi&IiETIM M Èi T Y N 0 5 1 6 — > T Y N 8 1 6 SCR FEATURES . HIGH SURGE CAPABILITY . HIGH ON-STATE CURRENT . HIGH STABILITY AND RELIABILITY DESCRIPTION The TYN 0516 —> TYN 816 Family Silicon Con­ trolled Rectifiers are high performance glass passi­

NTE7156

Contextual Info: NTE7156 Integrated Circuit DC–Coupled Vertical Deflection Circuit Description: The NTE7156 is a power circuit in a 9–Lead SIP type package designed for use in 90° and 110° color deflection systems for field frequencies of 50Hz to 120Hz. This device provides a DC driven vertical

Contextual Info: Philips Semiconductors Audio/Radio Products Laboratory Report Mounting power SIL devices NBA9002 Author: K. v.d. Wolf INTRODUCTION Philips manufactures a wide range of power ICs, with output powers varying from 0.5W to 50W. The various types are designed for

using the NTC inside

Abstract: EN50187 AN2009-10 transistor NTC 1,0 B25 equivalent ntc temperature measuring circuit schematic transistor modul trigger temperature to resistance of 10k ntc resistor electronic schematic 3433K
Contextual Info: Application Note, V1.0, Nov. 2009 AN2009-10 U s i n g th e N T C i n s i d e a p o w e r electronic module Considerations regarding temperature measurement IMM INP LP Edition 2010-01-13 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies AG 2010.

MT42C4064

Contextual Info: MICRO N T E C H N O L O G Y INC 5SE D • D G 0 5 7 b b Mñb H M R N UiT42C4064 883C 1 Ô4K x 4 VRAM 1 |W |iC = R O S ! MILITARY VRAM 64K x 4 DRAM WITH 256 x 4 SAM PIN ASSIGNMENT (Top View • MIL-STD-883, Class B 24-Pin DIP (D-11) FEATURES • • •

zinc

Abstract: kvar wiring 60831-1 Gas Insulated switchgear VDE 0660 part 500 IEC60831 IEC61921 bubble B25667-series
Contextual Info: Application Notes More Power with PhaseCap P o w e r Q u a l i t y S o l u t i o n s www.epcos.com/pfc Application Notes The collection of “PQS Application Notes” is a library with in-depth information on PFC applications, case studies and reference projects. It also serves as a helpdesk for all