S14060 Search Results

D3318

Abstract: LSI53C897
Contextual Info: TECHNICAL MANUAL LSI53C897 PCI to Dual Channel Ultra2 SCSI Multifunction Controller Version 2.0 April 2001 S14060 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties

S4112

Abstract: S25920
Contextual Info: Other Types of Si Photodiode S i P h o t o d i o d e s W it h P r e - a m p lif ie r Atfive Area TyceNo F oas SSRStMfy Waueiength Spectral Response Rango X dm rnm) 190 to 1100 S1406-04 320 to 1100 2.4x2.4 S 1406-06 SSS80 960 «2.54 320 to 1060 920 High-speed response

S2858

Abstract: S2858-01 PIN photodiode 300 nm photodiode 1100 nm S2856 S3887 photodiode 1000 nm G1957 24x24
Contextual Info: c • Photodiode/Op Amp Devices Type No. Peak Spectral Active Area Response Sensitivity Size Range Wavelength nm (mm) (mm) Features S1406-03 2.4X2.4 190 to 1100 S1406-04 2.4X2.4 320 to 1100 960 S1406-05 2.4X2.4 190 to 1000 720 S1406-06 2.4X2.4 320 to 1000

P873-G35-552

Abstract: p1760-04 P873-13
Contextual Info: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and

S1557

Abstract: S1651-01 metal detectors circuits S1671 S2281 S1651 S1406-06 hamamatsu PIN TO5
Contextual Info: HAMAMATSU CORP 4221fe,CH 00024T4 4 • tonæ rnim um n Speciall&Designe Specially Designed Photodiodes Ham amatsu currently produces a variety of special devices such as photodiode/op-amp detectors, TE-cooled photo­ diodes, and linear and mosaic arrays. If your application calls for something special, please contact us with your specific requirements.

S14020G

Abstract: S14025G S14030G S14035G S14045G S14050G S14055G S14060G S14065G S14070G
Contextual Info: S14 SERIES GENERAL PURPOSE LP FILTER STEEPNESS FACTOR 1.40 This range of 7-pole Elliptical Function Low Pass Filters is intended for bandwidth limitation with minimal distortion of the transmitted signal. The filters are corrected for Group Delay distortion over approx. 92% of

Photodiode, TO-5,

Abstract: ALCAN S1406-06 S1406-03 340nm Borosilicate S1226 1M12 S1336 hamamatsu PIN TO5
Contextual Info: SILICON PHOTODIODES WITH BUILT-IN OP AMP S1406 SERIES HAMAMATSU T E C H N IC A L D A T A FEATURES • Uses UV enhanced s ilic o n p h o to d io d e s S1226, S1336 series • FET in p u t o p e ra tio n a l a m p lifie r ( I b = 30pA) • H erm etica lly sealed in th e TO-5 package

S1406-06

Abstract: S1651-01 S1651 S1557-01 S1557 hamamatsu PIN TO5 S1671
Contextual Info: HAMAMATSU CORP ^ 0G0ES44 m 4 • Specially Configured Photodiodes_ -T-V/-Ù7 < -4 / -s 'I In addition to the many devices described in this catalog, Hamamatsu is able to produce a variety of special devices such as photodiodes with operational amplifiers, thermoelectrically-cooled photodiodes, and linear or area arrays

Contextual Info: 4 5 2 e!t i GÌ 00031a *47 30Ö • HPKJ Photodiode/Op Amp Devices Type No. Peak Spectral Active Area Response Sensitivity Size Range Wavelength mm (nm) (mm) Features S1406-03 2.4X2.4 190 to 1100 960 S1406-04 2.4X2.4 320 to 1100 960 S1406-05 2.4X2.4 190 to 1000