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    S13140 Price and Stock

    Samtec Inc

    Samtec Inc FFMD-03-S-13.14-01

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    Master Electronics FFMD-03-S-13.14-01
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    • 10 $7.17
    • 100 $5.57
    • 1000 $3.77
    • 10000 $2.78
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    Samtec Inc TCSD-10-S-13.14-01-N

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    Master Electronics TCSD-10-S-13.14-01-N
    • 1 -
    • 10 $9.72
    • 100 $6.46
    • 1000 $4.73
    • 10000 $4.73
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    Samtec Inc TCSD-08-S-13.14-01-N

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    Master Electronics TCSD-08-S-13.14-01-N
    • 1 -
    • 10 $8.29
    • 100 $6.15
    • 1000 $4.36
    • 10000 $3.68
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    Samtec Inc HCMS-02-S-13.14-01

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    Master Electronics HCMS-02-S-13.14-01
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    • 10 $4.31
    • 100 $3.49
    • 1000 $2.71
    • 10000 $2.00
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    Samtec Inc HCSD-20-S-13.14-01-N

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    Master Electronics HCSD-20-S-13.14-01-N
    • 1 -
    • 10 $14.90
    • 100 $11.73
    • 1000 $7.83
    • 10000 $7.83
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    Find more S13140 price and stock on Findchips.com

    S13140 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SPICE Device Model SUD08P06-155L www.vishay.com Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		sud08p06-155l2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: SPICE Device Model SiSA04DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		sisa04dn2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    7MC156

    Contextual Info: IDT 7MC156 256K 256K x 1-BIT CMOS STATIC RAM SIP MODULE FEATURES: DESCRIPTION: • High-denslty256K (256K x 1) CMOS static RAM module • Surface mounted LCC components mounted on a co-flred ceram ic substrate • Available In low profile 28-pin ceram ic SIP (single In-line


    OCR Scan     		high-denslty256k28-pin600mwidt7187s+47mc156s13-144idt7mc156s13-145 PDF

    Contextual Info: SPICE Device Model SiS456DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		sis456dn2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: IDT 7MC156 256K 256K x 1-BIT CMOS STATIC RAM SIP MODULE FEATURES: DESCRIPTION: • H igh-dansity 256K (256K x 1) CMOS static RAM m odule • Inputs and outputs d ire ctly TTL-com patible The IDT7MC156 is a 256K (256K x 1-bit) high-speed static RAM m odule constructed on a co-fired ceram ic substrate using four


    OCR Scan     		28-pin600mwidt7187spatible44+4idt7mc1567mc156256kxs13-145 PDF

    Contextual Info: SPICE Device Model SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		sihb22n60e2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: SPICE Device Model Si7850DP www.vishay.com Vishay Siliconix N-Channel 60 V D-S Fast Switching MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		si7850dp2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: SPICE Device Model Si7898DP www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		si7898dp2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: SPICE Device Model Si4490DY www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		si4490dy2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: SPICE Device Model SUD19N20-90 www.vishay.com Vishay Siliconix N-Channel 200 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		sud19n20-902002/95/ec2011/65/eujs709a+102-oct-12 PDF