SI4490DY Search Results

Contextual Info: Si4490DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.080 at VGS = 10 V 4.0 0.090 at VGS = 6.0 V 3.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

Contextual Info: Si4490DY Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.080 @ VGS = 10 V 4.0 0.090 @ VGS = 6.0 V 3.8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4490DY Si4490DY-T1 (with Tape and Reel)

Contextual Info: Si4490DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.080 at VGS = 10 V 4.0 0.090 at VGS = 6.0 V 3.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

4894

Abstract: AN609 Si4490DY 74108
Contextual Info: Si4490DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4490DY

Contextual Info: Si4490DY New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.080 @ VGS = 10 V 4.0 0.090 @ VGS = 6.0 V 3.8 D SO-8 S 1 8 D S 2 7 D S 3 6 D 5 D G 4 G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si4490DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.080 at VGS = 10 V 4.0 0.090 at VGS = 6.0 V 3.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/96/EC

Si4490DY

Abstract: Si4490DY-T1
Contextual Info: Si4490DY Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.080 @ VGS = 10 V 4.0 0.090 @ VGS = 6.0 V 3.8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4490DY Si4490DY-T1 (with Tape and Reel)

Si4490DY-T1-GE3

Abstract: SI4490DY-T1-E3 Si4490DY
Contextual Info: Si4490DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.080 at VGS = 10 V 4.0 0.090 at VGS = 6.0 V 3.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

Si4490DY

Contextual Info: SPICE Device Model Si4490DY N-Channel 200-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse

Contextual Info: Si4490DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.080 at VGS = 10 V 4.0 0.090 at VGS = 6.0 V 3.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

Contextual Info: SPICE Device Model Si4490DY www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Si4490DY

Abstract: Si4490DY-T1-E3 Si4490DY-T1-GE3
Contextual Info: Si4490DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.080 at VGS = 10 V 4.0 0.090 at VGS = 6.0 V 3.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

SI4490DY-T1-GE3

Contextual Info: Si4490DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.080 at VGS = 10 V 4.0 0.090 at VGS = 6.0 V 3.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

Si4490DY

Contextual Info: SPICE Device Model Si4490DY Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4490DY

Abstract: Si4490DY-T1
Contextual Info: Si4490DY Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.080 @ VGS = 10 V 4.0 0.090 @ VGS = 6.0 V 3.8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4490DY Si4490DY-T1 (with Tape and Reel)

Si4490DY

Abstract: 2319S
Contextual Info: SPICE Device Model Si4490DY Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

R0805

Abstract: mosfet 4456 sot23-123
Contextual Info: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description Features ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and

CT7343

Abstract: pa016 SC1302
Contextual Info: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description PRELIMINARY Features ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and

71917

Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller

LTC3724

Abstract: XFMR_EFD20 48V 24V converter using LTC3706 LTC3806 230V ac to 36V dc converter circuit 230V AC to 5V DC ic 230v to 6v step down transformer 230v to 9v step down transformer lt 6995 XFMR EFD20
Contextual Info: LTC3806 Synchronous Flyback DC/DC Controller U FEATURES DESCRIPTIO • The LTC 3806 is a current mode synchronous flyback controller that drives N-channel power MOSFETs and requires very few external components. It is intended for medium power applications where multiple outputs are

5a6 zener diode

Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
Contextual Info: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical

mosfet 4456

Abstract: R0805 C31 MARKING CODE SO8 CT7343 4456 so8 SC4910A SC4201 1N4148WS SC4910AITSTRT SC4910B
Contextual Info: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description Features ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and

front end ieee

Abstract: ptz schematic diagram "power sourcing equipment"
Contextual Info: LTC4268-1 High Power PD With Synchronous No-Opto Flyback Controller Description Features Robust 35W PD Front End IEEE 802.3af Compliant n Rugged 750mA Power MOSFET With Precision Dual Level Current Limit n High Performance Synchronous Flyback Controller n IEEE Isolation Obtained Without an Opto-Isolator

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455