S1303 Search Results

Contextual Info: BUZ 30A Infineon Iftchnologi«* SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type VDS b ^DS on Package Ordering Code BUZ 30A 200 V 21 A 0.13 £i TO-220 AB C67078-S1303-A3 Maximum Ratings Parameter Symbol Continuous drain current

C67078-S1303-A3

Contextual Info: BUZ 30A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 30A 200 V 21 A 0.13 Ω TO-220 AB C67078-S1303-A3 Maximum Ratings Parameter Symbol Continuous drain current

buz 350 equivalent

Abstract: transistor buz C67078-S1303-A3
Contextual Info: BUZ 30A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 30A 200 V 21 A 0.13 Ω PG-TO-220 AB C67078-S1303-A3 Maximum Ratings Parameter Symbol Continuous drain current

C67078-S1303-A3

Contextual Info: BUZ 30A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 30A 200 V 21 A 0.13 Ω TO-220 AB C67078-S1303-A3 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: BUZ 30A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 30A 200 V 21 A 0.13 Ω TO-220 AB C67078-S1303-A3 Maximum Ratings Parameter Symbol Continuous drain current

siemens 230 99 o

Abstract: BUZ30a
Contextual Info: SIEMENS BUZ30A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type V os h ^JS<on Package Ordering Code BUZ 30A 200 V 21 A 0.13 Û TO-220 AB C67078-S1303-A3 Maximum Ratings Parameter Symbol Values Continuous drain current

Contextual Info: SiHG22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • • • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.190 98 Qgs (nC) 17 Qgd (nC) 25 Configuration Single D TO-247AC

Contextual Info: SPICE Device Model SUM90P10-19L www.vishay.com Vishay Siliconix P-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SUM70N04-07L www.vishay.com Vishay Siliconix N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si8817DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: Si7450DP Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.080 at VGS = 10 V 5.3 0.090 at VGS = 6 V 5 • TrenchFET Power MOSFETs • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile

Contextual Info: SPICE Device Model SUM110P06-08L www.vishay.com Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SUM60N02-3m9P www.vishay.com Vishay Siliconix N-Channel 20 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: Si7450DP Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.080 at VGS = 10 V 5.3 0.090 at VGS = 6 V 5 • TrenchFET Power MOSFETs • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile

Contextual Info: B U R R - B R O W N <i [ ADS7824 ] 2 www.burr-brown.com/databook/ADS7824.html 4 Channel, 12-Bit Sampling CMOS A/D Converter FEATURES DESCRIPTION • 25|is max SAMPLING AND CONVERSION T h e A D S 7824 can acquire and con v ert 12 bits to w ithin ±0.5 LSB in 25|0,s m ax w hile consum ing only

HX8369

Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
Contextual Info: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010

Contextual Info: SPICE Device Model SUM90N03-2m2P www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

MDM 6600

Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
Contextual Info: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1

Ry110

Abstract: diode cross reference RY104 a2305 RY115 MICROWAVE ASSOCIATES IN3716 diode ry24 RY101 1N3717
Contextual Info: D 94D 0 0 0 1 3 2 5 7 8 2 5 2 CUSTOM COMPONENTS INC 7 " - o / - o ^ Ë F | 2 5 7 f l E S S D0DDD13 4 Custom Components, Inc. Box SSUt Lebanon, AT. J. 088SS 201 534-6151 TUNNEL DIODE CROSS REFERENCE GENERAL ELECTRIC AERTECH AERTECH # C C I# AERTECH # CCI #

SI2365

Abstract: Si2365EDS SI2365EDS-T1-GE3 P6 marking
Contextual Info: New Product Si2365EDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0320 at VGS = - 4.5 V - 5.9 0.0410 at VGS = - 2.5 V - 5.2 0.0675 at VGS = - 1.8 V - 4.3 a Qg (Typ.) 13.8 nC TO-236 (SOT-23)

Contextual Info: SPICE Device Model SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

1537A

Abstract: graphic equalizer LM VCA Associates LM3086 AUDIO Voltage Variable Attenuator 3086 KT 818 W voltage variable inductor
Contextual Info: ^ fÇ f S /l I ",>?/ ,. / ' 1537A V G A A S S O C I A T E S vo lta g e c o n t r o l l e d ATTENUATOR jk> The 1537A is a junction isolated, high precision A G C /V o lta g e controlled atten uator featuring a proprietary supermatched gain cell structure.

220v AC voltage stabilizer schematic diagram

Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122

Contextual Info: SPICE Device Model SiR826ADP www.vishay.com Vishay Siliconix N-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C