S12L Search Results

S12LY9C

Abstract: Hebei I.T
Contextual Info: Hebei I.T. Shanghai Co., Ltd. SPECIFICATION Part No. : S12LY9C Features： Highest Flux Yellow High reliability and Very long operating life Low voltage DC operated More Energy Efficient NO UV + Superior ESD protection + + RoHS Compliant - - Typical Applications：

Contextual Info: +HEHL,7 6KDQJKDL &R/WG LED SPECIFICATION Part No. ： S12LY9C-B Features： Highest Flux Yellow + Low voltage DC operated + up to 100K hours + High reliability and Very long operating life - - More Energy Efficient than Incandescent and most Halogen lamps

Contextual Info: S12LN125 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current150 @Temp (øC) (Test Condition)125Ï V(RRM)(V) Rep.Pk.Rev. Voltage960 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3.3k V(FM) Max.(V) Forward Voltage1.39 @I(FM) (A) (Test Condition)470 @Temp. (øC) (Test Condition)

LCD32F4B

Abstract: 32-frontplane 4 backplane FP20BP3 FP10BP3 FP18BP1 FP21E
Contextual Info: DOCUMENT NUMBER S12LCD32F4BV1/D LCD32F4B Block User Guide V01.07 Original Release Date: 26-July-2000 Revised: 08-Mar-2002 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or

S12LR2C-B

Contextual Info: +HEHL,7 6KDQJKDL &R/WG LED SPECIFICATION Part No. ： S12LR2C-B Features： Highest Flux Red + Low voltage DC operated + up to 100K hours + High reliability and Very long operating life - - More Energy Efficient than Incandescent and most Halogen lamps

Contextual Info: STAR Part No. S12LG2C Features Highest Flux Pure Green High reliability and Very long operating life up to 100K hours Low voltage DC operated More Energy Efficient than Incandescent and most Halogen lamps NO UV Superior ESD protection Typical Applications

LCD32F4B

Contextual Info: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. DOCUMENT NUMBER S12LCD32F4BV1/D LCD32F4B Block User Guide V01.07 Original Release Date: 26-July-2000 Revised: 08-Mar-2002 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or

telemetry block diagram

Abstract: HFA3600 HFA3600IB IS-54 schematic diagram UPS active power 600 LNA for WIRELESS APPLICATIONS FROM 100 MHz - 800Mhz HA3600 S11L
Contextual Info: HFA3600 NO RE U CT NT PROD E T E CEME L OBSO DED REPLA Data Sheet EN COMM August 2002 FN3655.5 Low-Noise Amplifier/Mixer Features The HFA3600 is a silicon Low-Noise Amplifier with high performance characteristics allowing the design of very sensitive, wide dynamic-range 900MHz receivers with

Contextual Info: SIEMENS BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F=1.45dB at 900MHz SOT-23 RFs Q62702-F1314 1= B 2=E o Package BFR 181 II CO ESP: Electrostatic discharge sensitive device, observe handling precaution!

sot marking code ZS

Abstract: transistor bf 290
Contextual Info: SIEMENS BF 770A NPN S ilicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators it m 1= B h Q62702-F1124 O LSs CO BF 770A ro ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin C onfiguration

Contextual Info: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • /f = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1316 1= B li O BFR 183 CO ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: DOCUMENT NUMBER 9S12H256BDGV1/D MC9S12H256 Device User Guide V01.16 Original Release Date: 29 SEP 2000 Revised: 05 NOV 2003 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or

generator cr 665 bosch

Abstract: BOSCH 0 281 002 709 MC9S12ZVM
Contextual Info: MC9S12ZVM-Family Reference Manual HCS12 Microcontrollers Rev. 1.3 20 JAN 2014 MC9S12ZVMRMV1 freescale.com To provide the most up-to-date information, the document revision on the Internet is the most current. A printed copy may be an earlier revision. To verify you have the latest information available, refer to :

gbr relais

Abstract: TRANSISTOR KATALOG VEB M ik ro e le k tro n ik VEB Kombinat Germanium Transistor katalog Schaltkreise ad149 Germanium Transistor Kombinat VEB Gleichrichter
Contextual Info: Stromversorgung M odul 2 0 • G erm anium KOMBINAT VEB ELEKTRO-APPARATE-WERKE BERLIN-TREPTOW STROMVERSORGUNG Modul 20 - Germ anium Ausgabe 1972 I« y ' r . ■•} il- .'ff. Seite 4» 3 Konstruktiver Aufbcau , ■ Elektrische g r a m s t e r 4 Bezeichnung der Bausteine und

SCR TRIGGER PULSE 3 phase

Abstract: OMC942723170 Hitachi DSA0044
Contextual Info: OMC942723170 H8/300H Series On-Chip Supporting Modules Application Note ADE-502-035 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form,

Chips and Technologies F840

Abstract: b1115 d6160
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

BGA735N16

Contextual Info: BGA735N16 High Linearity Tri-Band UMTS LNA 2100, 1900/1800/2100, 800/900MHz Data Sheet Revision 3.5, 2009-11-24 Final RF & Protection Devices Edition 2009-11-24 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG

Contextual Info: BGA771N16 High Linearity Dual-Band UMTS LNA 1900/1800/2100, 800/900MHz Data Sheet Revision 3.1, 2010-03-16 Final RF & Protection Devices Edition 2010-03-16 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

TGS 880

Abstract: INFINEON PART MARKING BGA751L7 S12L
Contextual Info: D a t a S h e e t , V 3. 0 , S e p t e m b e r 2 00 8 B G A 7 51 L7 S i n gl e - B a n d U M T S L N A 800 MHz S m a l l S i g n a l D i s c r et e s Edition 2008-09-25 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2008.

BGA736

Abstract: HSDPA BGA736L16 KC639 T1540 T0712
Contextual Info: Data Sheet, V2.1, July 2008 BGA736L16 Tri-Band HSDPA LNA 2100, 1900/2100, 800/900 MHz RF & Protection Devices Edition 2008-07-03 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer

hsdpa

Abstract: BGA736L16 TGS 800
Contextual Info: D a t a S he et , V 2. 1, J u l y 2 00 8 B G A 7 36 L1 6 Tri-Band HSDPA LNA 2 1 00 , 1 9 0 0/ 2 1 0 0 , 8 0 0 / 9 00 M H z S m a l l S i g n a l D i s c r et e s Edition 2008-07-03 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2008.

Contextual Info: Data Sheet, V2.1, July 2008 BGA736L16 Tri-Band HSDPA LNA 2100, 1900/2100, 800/900 MHz RF & Protection Devices Edition 2008-07-03 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer

Contextual Info: SIEMENS BFP183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! BFP 183R RHs

Contextual Info: D a t a S he et , V 3. 0, A ug us t 2 00 8 B G A 7 35 L1 6 H i g h L i n ea r i t y T r i - B an d U M T S L N A 2 1 00 , 1 9 0 0/ 1 8 0 0 /2 1 0 0 , 80 0 / 9 0 0 M H z S m a l l S i g n a l D i s c r et e s Edition 2008-08-26 Published by Infineon Technologies AG