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Samtec Inc


Samtec Inc TCSD-10-S-12.31-01-N
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	TCSD-10-S-12.31-01-N					1 - 10 $8.42 100 $6.24 1000 $4.43 10000 $3.73	Buy Now
Samtec Inc FFSD-05-S-12.31-01-N
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	FFSD-05-S-12.31-01-N					1 - 10 $7.94 100 $5.61 1000 $3.69 10000 $3.05	Buy Now
Samtec Inc ZW-12-14-F-S-1231-055
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	ZW-12-14-F-S-1231-055					1 - 10 - 100 $1.42 1000 $0.93 10000 $0.49	Buy Now
Samtec Inc FFSD-06-S-12.31-01-N
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	FFSD-06-S-12.31-01-N					1 - 10 $8.13 100 $5.75 1000 $3.77 10000 $3.13	Buy Now
Samtec Inc TCSD-06-S-12.31-01-N
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	TCSD-06-S-12.31-01-N					1 - 10 $7.50 100 $5.57 1000 $3.95 10000 $3.28	Buy Now

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S12310 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SIHW30N60E-GE3 Contextual Info: SiHW30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single APPLICATIONS	Original	sihw30n60e 2002/95/ec 2011/65/eu js709a +202-oct-12 sihw30n60e-ge3	PDF
Contextual Info: SiHP30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single D APPLICATIONS	Original	sihp30n60e 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Contextual Info: SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single APPLICATIONS	Original	sihg30n60e 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
4810 mosfet Contextual Info: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.064 Qg max. (nC) 220 • Reduced Switching and Conduction Losses	Original	sihg47n60e o-247ac 2002/95/ec 2011/65/eu +3js709a 02-oct-12 4810 mosfet	PDF
Contextual Info: SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single APPLICATIONS	Original	sihg30n60e o-247ac 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
SDS Relais rh-c-12v Abstract: EUD61M rac 16a 400v Contextual Info: 1949–2015 YEARS OF INNOVATION Switchgear, power supply units and electronic energy meters for installation in buildings and use in control technology Products and prices 2015 Switching on the future Pictograms The performance of our switchgear has become so complex that we have devised pictograms to depict	Original	d-70736 i-64025 ch-8954 e-08398 +3sds relais rh-c-12v eud61m rac 16a 400v	PDF
Contextual Info: SiHG24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145	Original	sihg24n65e o-247ac 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: SiHP24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145	Original	sihp24n65e o-220ab 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: SiHW47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.064 Qg max. (nC) 220 Qgs (nC) 36 Qgd (nC) 60 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	sihw47n60e o-247ad 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: SiHB30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	sihb30n60e o-263 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: SiHP30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single D APPLICATIONS	Original	sihp30n60e o-220ab 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145	Original	sihb24n65e o-263 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: SiHG24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145	Original	sihg24n65e 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Contextual Info: SiHP24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145	Original	sihp24n65e 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF