S12310 Search Results
S12310 Price and Stock
Vishay Intertechnologies RS1/2310R0DB12- Bulk (Alt: RS1/2310R0DB12) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RS1/2310R0DB12 | Bulk | 14 Weeks | 100 |
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Amphenol Corporation TS12310D0000G- Bulk (Alt: TS12310D0000G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TS12310D0000G | Bulk | 3,000 |
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TS12310D0000G | 16 Weeks | 3,000 |
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Amphenol Corporation TS12310A0000G- Bulk (Alt: TS12310A0000G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TS12310A0000G | Bulk | 3,060 |
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TS12310A0000G | 16 Weeks | 3,060 |
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Amphenol Corporation TS12310C0000G- Bulk (Alt: TS12310C0000G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TS12310C0000G | Bulk | 3,000 |
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TS12310C0000G | 16 Weeks | 3,000 |
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Amphenol Corporation TS12310B0000G- Bulk (Alt: TS12310B0000G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TS12310B0000G | Bulk | 3,040 |
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TS12310B0000G | 16 Weeks | 3,040 |
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S12310 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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SIHW30N60E-GE3Contextual Info: SiHW30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single APPLICATIONS |
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sihw30n60e2002/95/ec2011/65/eujs709a+2 | |
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Contextual Info: SiHP30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single D APPLICATIONS |
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sihp30n60e2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single APPLICATIONS |
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sihg30n60e2002/95/ec2011/65/eujs709a+1 | |
4810 mosfetContextual Info: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.064 Qg max. (nC) 220 • Reduced Switching and Conduction Losses |
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sihg47n60eo-247ac2002/95/ec2011/65/eu+3 | |
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Contextual Info: SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single APPLICATIONS |
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sihg30n60eo-247ac2002/95/ec2011/65/eu+2 | |
SDS Relais rh-c-12v
Abstract: EUD61M rac 16a 400v
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d-70736i-64025ch-8954e-08398+3 | |
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Contextual Info: SiHG24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145 |
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sihg24n65eo-247ac2002/95/ec2011/65/eu+2 | |
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Contextual Info: SiHP24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145 |
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sihp24n65eo-220ab2002/95/ec2011/65/eu+2 | |
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Contextual Info: SiHW47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.064 Qg max. (nC) 220 Qgs (nC) 36 Qgd (nC) 60 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg |
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sihw47n60eo-247ad2002/95/ec2011/65/eu+2 | |
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Contextual Info: SiHB30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg |
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sihb30n60eo-2632002/95/ec2011/65/eu+2 | |
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Contextual Info: SiHP30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single D APPLICATIONS |
Original |
sihp30n60eo-220ab2002/95/ec2011/65/eu+2 | |
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Contextual Info: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145 |
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sihb24n65eo-2632002/95/ec2011/65/eu+2 | |
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Contextual Info: SiHG24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145 |
Original |
sihg24n65e2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: SiHP24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145 |
Original |
sihp24n65e2002/95/ec2011/65/eujs709a+1 |