S1126 Search Results
S1126 Result Highlights (4)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| PMCS1126A1BQDVGR | Texas Instruments | ±1300V reinforced isolation, 80ARMS 500kHz Hall-effect current sensor with AFR, reference and ALERT 10-SOIC -40 to 125 |
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| PMCS1126B2BQDVGR | Texas Instruments | ±1300V reinforced isolation, 80ARMS 500kHz Hall-effect current sensor with AFR, reference and ALERT 10-SOIC -40 to 125 |
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| PMCS1126A2BQDVGR | Texas Instruments | ±1300V reinforced isolation, 80ARMS 500kHz Hall-effect current sensor with AFR, reference and ALERT 10-SOIC -40 to 125 |
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| PMCS1126B1BQDVGR | Texas Instruments | ±1300V reinforced isolation, 80ARMS 500kHz Hall-effect current sensor with AFR, reference and ALERT 10-SOIC -40 to 125 |
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S1126 Price and Stock
Ningbo connfly electronic CO LTD DS1126-S80BPConnector: RJ45; socket; data transfer; PIN: 8; shielded; 8p8c; THT |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DS1126-S80BP | 13,476 | 1 |
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Carlo Gavazzi Holding AG RHS11267DINDHeatsink: extruded; L: 125mm; W: 119mm; H: 94mm; 0.54K/W; aluminium |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RHS11267DIND | 1 |
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RHS11267DIND | Bulk | 9 | 8 Weeks | 1 |
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Samtec Inc TMS-112-60-L-S- Rail/Tube (Alt: TMS-112-60-L-S) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TMS-112-60-L-S | Tube | 1 Weeks | 1 |
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TMS-112-60-L-S | Bulk | 148 | 1 |
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Samtec Inc TMS-112-60-S-S- Rail/Tube (Alt: TMS-112-60-S-S) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TMS-112-60-S-S | Tube | 1 Weeks | 1 |
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TMS-112-60-S-S | Bulk | 148 | 1 |
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Samtec Inc TMS-112-60-G-D- Rail/Tube (Alt: TMS-112-60-G-D) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TMS-112-60-G-D | Tube | 1 Weeks | 1 |
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TMS-112-60-G-D | Bulk | 132 | 1 |
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TMS-112-60-G-D | 132 | 1 |
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TMS-112-60-G-D |
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S1126 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
C102
Abstract: C103 S150 S160 S307 D306 D3072
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Original |
pd16640cc102c103s150+4 | |
diode s1 77
Abstract: S124 diode s1 diode s1 74 socket s1 S1-100 S1-128
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Original |
s1-118s1-110s1-103s1-100+12 | |
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Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT 300/309-OUTPUT TFT-LCD SOURCE DRIVER 64 GRAY SCALE DESCRIPTION The ^¡PD16640C is a source driver for TFT-LCD 64-gray scale displays. Its logic circuit operates at 3.3 V and the driver circuit operates at 3.3 or 5.0 V (selectable). The input data is digital data at 6 bits x 3 dots, and 260,000 colors |
OCR Scan |
300/309-outputpd16640c64-gray64-value+4 | |
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Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT H PD16640C 300/309-OUTPUT TFT-LCD SOURCE DRIVER 64 GRAY SCALE DESCRIPTION The /j, PD16640C is a source driver for TFT-LCD 64-gray scale displays. Its logic circuit operates at 3.3 V and the |
OCR Scan |
pd16640c300/309-output64-gray64-value+4 | |
socket s1
Abstract: diode s1 61 diode s1 77 diode s1 85 S124 040 d10 diode s1 diode s1 74 HW-133-PQ160 S1 18
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Original |
s1-90s1-82s1-79s1-77+16 | |
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Contextual Info: Mobile data carrier TW-R20-B128-Ex • ATEX category II 2 G, Ex-zone 1 ■ ATEX category II 2 D, Ex-zone 21 ■ EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, |
Original |
tw-r20-b128-ex2013-07-12t17d-45472 | |
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Contextual Info: Mobile data carrier TW-L80-50-P-B128 • EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, depending on the combination of read/write |
Original |
tw-l80-50-p-b128ope47/s1126tn-s32xl-h11472013-07-12t17+1 | |
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Contextual Info: Mobile data carrier TW-R30-M-B128 • ■ 3 different mounting options in/on metal, incl. accessories EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, |
Original |
tw-r30-m-b128d-45472mf-r30twr30-m-b128+1 | |
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Contextual Info: Mobile data carrier TW-L49-46-F-B128 • EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, depending on the combination of read/write |
Original |
tw-l49-46-f-b128ope47/s1126tn-s32xl-h11472013-07-12t17+1 | |
HX8369
Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
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Original |
hx8369-a00-dshx8369-a00480rgb285october+5 | |
d312 6 pin
Abstract: C102 C103 S150 S160 S307
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Original |
pd16640c300/309-output64-gray64-value+6 | |
C102
Abstract: C103 S150 S160 S307
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Original |
c102c103s150s160+1 | |
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Contextual Info: Mobile data carrier TW-R16-B128-Ex • ATEX category II 2 G, Ex-zone 1 ■ ATEX category II 2 D, Ex-zone 21 ■ EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, |
Original |
tw-r16-b128-ex2013-07-12t17d-45472 | |
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Contextual Info: Mobile data carrier TW-R50-B128 • EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, depending on the combination of read/write head and data carrier. |
Original |
tw-r50-b128t0-h1147/s1126tn-s32xl-h11472013-07-12t17+1 | |
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BVS 09 ATEXContextual Info: Mobile data carrier TW-R30-B128-Ex • ATEX category II 2 G, Ex-zone 1 ■ ATEX category II 2 D, Ex-zone 21 ■ EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, |
Original |
tw-r30-b128-ex2013-07-12t17d-45472bvs 09 atex | |
T35W
Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
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OCR Scan |
10db2p10db4p10db6p180b6a+10 | |
TN-M18-H1147/S1126Contextual Info: Mobile data carrier TW-R16-B128 • EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, depending on the combination of read/write head and data carrier. |
Original |
tw-r16-b128t0-h1147/s1126tn-s32xl-h11472013-07-12t17+2 | |
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Contextual Info: Mobile data carrier TW-R30-B128 • EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, depending on the combination of read/write head and data carrier. |
Original |
tw-r30-b128t0-h1147/s1126tn-s32xl-h11472013-07-12t17+1 | |
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Contextual Info: Mobile data carrier TW-R20-B128 • EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, depending on the combination of read/write head and data carrier. |
Original |
tw-r20-b128t0-h1147/s1126tn-s32xl-h11472013-07-12t17+1 | |
75C48
Abstract: IDT75C48 o1111111
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OCR Scan |
4a25771500mw28-pinil-std-883+6 | |
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Contextual Info: Mobile data carrier TW-R50-B128-Ex • ATEX category II 2 G, Ex-zone 1 ■ ATEX category II 2 D, Ex-zone 21 ■ EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, |
Original |
tw-r50-b128-ex2013-07-12t17d-45472 | |
VDD-250
Abstract: C102 C103 S150 S160 S307 VDD250 S1126
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Original |
pd16640cpd16640cn-xxxs11269jj1v1ds00103-bit+8 | |