S1026 Search Results

Contextual Info: Si1021R Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA) - 60 4.0 at VGS = - 10 V - 1 to 3.0 - 190 SC-75A (SOT-416) G 1 APPLICATIONS 3 S • Halogen-free According to IEC 61249-2-21 Definition

EC2 WS-501

Abstract: WS-1080 ws353 WS-1070 WS-2028 WS-516 WS-3507 WS-3510 WS-3570 WS-20130
Contextual Info: lowprofile Wee SIP LUMPED CONSTANT SIVE DELAY LINE J # # # # # # Analog input and output D elays stable and precise 3-pin Wee S IP package .1 8 0 high Available in delays from 1ns to 2 5 0 n s Precise, fixed delay Available in im pedances of 5 0 , 1 0 0 , 2 0 0 ,

Contextual Info: Si1021R Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA) - 60 4.0 at VGS = - 10 V - 1 to 3.0 - 190 SC-75A (SOT-416) G 1 APPLICATIONS 3 S • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: ► S1026 64K X 16 CMOS SRAM MODULE Dense-Pac Microsystems, Inc. 0 NOT RECOMMENDED FOR NEW DESIGNS DESCRIPTION: The S1026 is a 64K X 16 high-speed, low-power static RAM module comprised of sixteen 64K X 1 monolithic SRAM 's, and decoupling capacitors surface mounted on a thick film ceramic substrate.

Contextual Info: OPA6Q3 High Speed, Current-Feedback, High Voltage OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • WIDE SUPPLY RANGE: ±4.5 to ±18V • VIDEO AMPLIFIER • BANDWIDTH: 100MHz, G = 1 to 10 • PULSE AMPLIFIER • SLEW RATE: 1000V/|is • SONAR, ULTRASOUND BUFFERS

7133-1

Abstract: si1022r
Contextual Info: Si1022R Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA) 60 1.25 at VGS = 10 V 1 to 2.5 330 SC-75A (SOT-416) G 1 3 S 2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

Contextual Info: New Product SiS330DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)f 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SQM110N06

Abstract: SQM110N06-06
Contextual Info: SQM110N06-06 Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd

Contextual Info: New Product SiR330DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 11.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product SiR878DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 100 0.014 at VGS = 10 V 40 0.0148 at VGS = 7.5 V 38 0.019 at VGS = 4.5 V 34 Qg (Typ.) 13.6 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm • DC/DC Primary Side Switch

Contextual Info: New Product SiR880DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0059 at VGS = 10 V 60 0.0067 at VGS = 7.5 V 60 0.0085 at VGS = 4.5 V 60 VDS (V) 80 Qg (Typ.) 23 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product SiR882DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0087 at VGS = 10 V 60 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 18.3 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm

Contextual Info: Si4202DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.014 at VGS = 10 V 12.1 0.017 at VGS = 4.5 V 11 Qg (Typ.) 5.4 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

S1026

Contextual Info: S1026 □PM_ _Microsystems, tnc^ Dense-Pac v 64K X 16 C M O S S R A M M O D U L E NOT RECOMMENDED FOR NEW DESIGNS DESCRIPTION: The S1026 is a 64K X 16 high-speed, low-power static RAM module comprised of sixteen 64K X 1 monolithic SRAM 's, and decoupling capacitors

Contextual Info: Si1022R Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA) 60 1.25 at VGS = 10 V 1 to 2.5 330 SC-75A (SOT-416) G 1 3 S 2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

SI1021R

Contextual Info: Si1021R Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA) - 60 4.0 at VGS = - 10 V - 1 to 3.0 - 190 SC-75A (SOT-416) G 1 APPLICATIONS 3 S • Halogen-free According to IEC 61249-2-21 Definition

DEVICE MARKING 03L

Contextual Info: SQM110N04-03L Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0053 ID (A) • TrenchFET Power MOSFET

SQM110N04-04

Contextual Info: SQM110N04-04 Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 ID (A) • TrenchFET Power MOSFET 120 Configuration

Contextual Info: SQM110P06-07L Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 60 RDS(on) () at VGS = - 10 V 0.0067 RDS(on) () at VGS = - 4.5 V 0.0088 ID (A) - 120

Contextual Info: SiS892DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)f 0.029 at VGS = 10 V 30g 0.042 at VGS = 4.5 V 25 VDS (V) 100 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

71331

Contextual Info: Si1022R Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA) 60 1.25 at VGS = 10 V 1 to 2.5 330 SC-75A (SOT-416) G 1 3 S 2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

Contextual Info: Si7844DP Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.022 at VGS = 10 V 10 0.030 at VGS = 4.5 V 8.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: New Product SiR880DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0059 at VGS = 10 V 60 0.0067 at VGS = 7.5 V 60 0.0085 at VGS = 4.5 V 60 VDS (V) 80 Qg (Typ.) 23 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product Si4909DY Vishay Siliconix Dual P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 40 ID (A)d 0.027 at VGS = - 10 V -8 0.034 at VGS = - 4.5 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET