S1024 Search Results

Contextual Info: Double - Turret Standoffs ADVANCED INTERCONNECTIONS 5 Energy Way, P.O. Box 1342, West Waiwick, Rl 02893 •Tel. 401 -823-5200 - FAX 401 -823-8723 •TW X S102403454 EMC Product "DTS" Series Plating: -14: 400fi" Tin terminal, 200u'‘ Cadmium Chromate base/eyelet

power supply 10w 12v

Abstract: relay 12v mtbf S1024 EMI FILTER 24V PS-S1015
Contextual Info: PS-S10 Series 10W Single Output Industrial DIN Rail Power Supply SPECIFICATION PS-S1005 MODEL Note.3 PS-S1015 PS-S1024 5V 12V 15V 24V 2A 0. 84A 0. 67A 0. 42A 10W 10W 10W 10W Note.2 80mVp-p OUTPUT PS-S1012 120mVp-p 120mVp-p 150mVp-p 5.0% 3.0% 3.0% 2.0% 1.0%

Contextual Info: S1024 Dense-Pac Microsystems, Inc. 64K X 16 C M O S SRAM M O D U LE O D ESCRIPTIO N: The D P S1024 is a 64K X 16 high-speed, low-power static R A M module comprised of sixteen 64K X 1 monolithic S R A M 's, and decoupling capacitors surface mounted on a co-fired ceramic substrate

Contextual Info: TPIC6E175 POWER LOGIC EEPROM-PROGRAMMABLE QUAD D-TYPE LATCH SLIS052 - NO VEM BER 1995 NE PACKAGE TOP VIEW Programmable-PWM Current Threshold Programmable-PWM Frequency Controlled by Internal or External Oscillator O S C /V E R [ 1 DRAIN1 [ 2 Integrated Output Recirculation Clamp

SUP75P03-07-E3

Contextual Info: SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available

IRFD9024

Contextual Info: IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 60 RDS(on) () • Repetitive Avalanche Rated VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • For Automatic Insertion

IRFD9120

Contextual Info: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration

IRLD120

Contextual Info: IRLD120, SiHLD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Available • Repetitive Avalanche Rated 0.27 RoHS* • For Automatic Insertion

IRL540S

Abstract: SiHL540S SiHL540S-E3
Contextual Info: IRL540S, SiHL540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () 100 VGS = 5 V 0.077 Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S S • Halogen-free According to IEC 61249-2-21

C1841

Abstract: c1871 c1118 C1861 B59022-S1120-A70 C1851 C1831 B59025-S1120-A70 B59022S1120A70 B59861-C1120-A70
Contextual Info: Ausgewählte Anwendungen Selected applications Maßbild Typ Nennstrom Outline drawing Type Rated current mA 6 ,Ûm ax Bestell-Nr. NennMaße widerstand Rated Dimensions resistance Ordering code f l 25 ^m ax ^m ax 0d Q mm mm mm Vmax = 265 V, 7~Ref = 120 °C Trafoschutz/Transformer protection

67125

Contextual Info: SPICE Device Model Si4200DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

S10-2445

Contextual Info: SPICE Device Model SiB410DK Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

EC2 WS-501

Abstract: WS-1080 ws353 WS-1070 WS-2028 WS-516 WS-3507 WS-3510 WS-3570 WS-20130
Contextual Info: lowprofile Wee SIP LUMPED CONSTANT SIVE DELAY LINE J # # # # # # Analog input and output D elays stable and precise 3-pin Wee S IP package .1 8 0 high Available in delays from 1ns to 2 5 0 n s Precise, fixed delay Available in im pedances of 5 0 , 1 0 0 , 2 0 0 ,

IRFZ44L

Abstract: IRFZ44S SiHFZ44L SiHFZ44S IRFZ44 data
Contextual Info: IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ44S, SiHFZ44S) • Low-Profile Through-Hole (IRFZ44L, SiHFZ44L)

Contextual Info: Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21

SC-89

Abstract: Si1026X VISHAY MARKING S10 SMA Si1026X-T1-GE3
Contextual Info: Si1026X Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS(min) (V) RDS(on) () VGS(th) (V) ID (mA) 60 1.40 at VGS = 10 V 1 to 2.5 500 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 1.40  • Low Threshold: 2 V (typ.)

SUB75P03-07

Abstract: SUP75P03-07 a2005v
Contextual Info: SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available

transistor B1204

Abstract: b1045 b1184 B1204 PTC Thermistor S1024 transistor b1045 transistor b1184 ptc S1122 B1076 PTC S1024
Contextual Info: PTC thermistors for telecom Leaded disks Series/Type: B59* Date: October 2006  EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

Contextual Info: IMAGE SENSOR CCD area image sensor S7033/S7034 series Back-thinned FFT-CCD S7033/S7034 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. S7033/S7034 series feature large full-well capacity in horizontal CCD register. By using the binning operation, S7033/S7034 series can be used

S10420-1006-01

Abstract: S10420-1106N-01 "infrared led" 800 nm 980 nm S11071 S11071-1106N
Contextual Info: CCD image sensors S11071/S10420-01 series Improved etaloning characteristics, High-speed type and low noise type available The S11071/S10420-01 series are back-thinned CCD image sensors designed for spectrometers. Two types consisting of a high-speed type S11071 series and low noise type (S10420-01 series) are available with improved etaloning characteristics. The S11071/S10420-01 series offer nearly flat spectral response characteristics with high quantum efficiency

CSGA

Contextual Info: IMAGE SENSOR CCD area image sensor S7019-1009 1024 x 512 pixels, front-illuminated FT-CCD S7019-1009 is a FT-CCD area image sensor specifically designed for low-light-level detection in scientific applications. In particular, this image sensor is ideally suited for extremely low-light-level detection in such fields as spectroscopy and astronomy.

CSGA

Contextual Info: IMAGE SENSOR CCD area image sensor S7019-1009 1024 x 512 pixels, front-illuminated FT-CCD S7019-1009 is a FT-CCD area image sensor specifically designed for low-light-level detection in scientific applications. In particular, this image sensor is ideally suited for extremely low-light-level detection in such fields as spectroscopy and astronomy.

S7031-0908S

Abstract: S7032
Contextual Info: CCD area image sensors S7030/S7031 series Back-thinned FFT-CCD The S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, the S7030/S7031 series can be used as a linear image sensor having a long aperture

Contextual Info: i 5 8 5 L 0 L PS 2 -ON ONIMVHQ -&#Sgl W. M. & a Hi CHK. %-n b DATE DON NO. 22. JU 1.2005 057890 SHAPE CHANGE IN S LID E R . • - K.HASEBE 058583 SHAPE CHANG IN S LID E R LOCK PART OF SOCKET HOUSING. — K.HASEBE JK tfc R EV. 7.Mar.2006 B D E S C R IP T IO N