S1018 Search Results

BUZ36

Abstract: transistor buz 36 C67078-S1018-A2 din 982 SiEMENS PM 350 98 88 diode C160
Contextual Info: SIEM EN S SIPMOS Power Transistor BUZ 36 • N channel • Enhancement mode • Avalanche-rated Type VDS h ^O S {on Package 1> Ordering Code BUZ 36 200 V 22 A 0.12Í2 TO-204 AE C67078-S1018-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 33 “C

Contextual Info: BSM 101 AR SIMOPAC MODULE • Power module • Single switch • N channel • Enhancement mode • Pakage with insulated metal base plate Type VDS ID RDS on max Package Ordering Code BSM 101 AR 50 V 200 A 0.003 Ω SSW MOS 1 C67076-S1018-A20 Maximum Ratings

bsm 50 Gb 120 IGBT

Abstract: igbt BSM 300 GA 120 GAL 200 gb BSM 15 GB BSM254F C67076-A2101-A2 C67076-A2007-A2 C67076-A2507-A52 100/D
Contextual Info: Ordering Codes SIEM ENS SIMOPAC Modules Ordering Code Page BSM 101 AR C67076-S1018-A2 17 BSM 111 AR C67076-S1013-A2 24 BSM 121 AR C67076-S1014-A2 31 BSM 141 C67076-A1010-A2 38 BSM 151 C67076-A1004-A2 44 Type Single Switches BSM 151 F C67076-A1050-A2 50 BSM 181

transistor buz 36

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 36 • N channel • Enhancement mode • Avalanche-rated Type v DS h BUZ 36 200 V 22 A ^OS on 0.12 Í2 Package 1> Ordering Code TO-204 AE C67078-S1018-A2 Maximum Ratings Parameter Symbol Values Continuous drain current, Tc = 33 °C

7w led

Abstract: S1018-0ER-014N S1019-0ER-024N S1019-0ER-120AN S1019-0ER-240AN S1019-0UR-024N S1019-0UR-120AN S1019-0UR-240AN
Contextual Info:  18/19 LED Cluster, 25mm Edison Screw Based Lamps 660nm Ultra Red GaAIAs/GaAIAs Part Number Input Voltage S1018-0UR-014N 12/14V S1019-0UR-024N 24V Power Watts typ 1.0W to S1019-0UR-240AN 240VAC 1.7W S1019-0UR-120AN 120VAC 633nm Super Red InGaAIP S1018-0ER-014N

SI7997Dp

Contextual Info: New Product Si7997DP Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () - 30 0.0055 at VGS = - 10 V - 60 0.0078 at VGS = - 4.5 V - 60 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

EC2 WS-501

Abstract: WS-1080 ws353 WS-1070 WS-2028 WS-516 WS-3507 WS-3510 WS-3570 WS-20130
Contextual Info: lowprofile Wee SIP LUMPED CONSTANT SIVE DELAY LINE J # # # # # # Analog input and output D elays stable and precise 3-pin Wee S IP package .1 8 0 high Available in delays from 1ns to 2 5 0 n s Precise, fixed delay Available in im pedances of 5 0 , 1 0 0 , 2 0 0 ,

uPD72103AGC-3B9

Abstract: uPD72103A uPD72103 uPD7210 UPD72103AGC uPD70116 uPD71059 S10766E UPD72103ALP
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD72103A HDLC CONTROLLER DESCRIPTION The µPD72103A HDLCC High-Level Data Link Control Procedure Controller is a communication control LSI which supports HDLC. Since the HDLCC has an on-chip DMA (Direct Memory Access) function, the host system can perform serial

Contextual Info: SQM50N04-4m0L Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd

Contextual Info: SQ3426EEV Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedc

Contextual Info: New Product SQ2315ES Vishay Siliconix Automotive P-Channel 12 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedc

Contextual Info: SQ3481EV Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedc

Contextual Info: SQM18N33-160H Vishay Siliconix Automotive N-Channel 330 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 330 RDS(on) () at VGS = 10 V 0.160 ID (A) • TrenchFET Power MOSFET 31 Configuration

Contextual Info: SQS400EN Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () at VGS = 10 V 0.018 RDS(on) () at VGS = 4.5 V 0.032 ID (A) 16 Configuration Single PowerPAK 1212-8 D S 3.30 mm • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product Si7997DP Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () - 30 0.0055 at VGS = - 10 V - 60 0.0078 at VGS = - 4.5 V - 60 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si7997DP Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () - 30 0.0055 at VGS = - 10 V - 60 0.0078 at VGS = - 4.5 V - 60 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si4487DY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0205 at VGS = - 10 V - 11.6 0.0375 at VGS = - 4.5 V - 8.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

74HC14 input and output circuit diagram

Abstract: IC 74HC14 74HC14 54HC IC 74HC14 inverter of ic 74HC14 74ls14 pin diagram
Contextual Info: S G S -T H O M S O N iUi gra§ K S M54HC14 M74HC14 HEX SCHMITT INVERTER • HIGH SPEED tPD = 14 ns (TYP.) at VCc = 5V ■ LOW POWER DISSIPATION ICC = 1 #«A (MAX.) at TA = 25°C ■ HIGH NOISE IMMUNITY VNIH = V n i L = 28% Vcc (MIN.) ■ OUTPUT DRIVE CAPABILITY

sl1040

Abstract: SL1018
Contextual Info: FEATURES S100 D I R E C T L Y R E P L A C E S S T A ND A RD I N C A N D E C S E N T S LO NG LIFE , 1 0 0 , 0 0 0 H O U R S HIG H S H O C K / V IB R A T IO N R E S IS T A N C E S O L ID STATE B U I L T - I N R E S IS T O R FOR DIREC T 6 V TO 1 3 0 V A C / DC

Contextual Info: SQM18N33-160H Vishay Siliconix Automotive N-Channel 330 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 330 RDS(on) () at VGS = 10 V 0.160 ID (A) • TrenchFET Power MOSFET 31 Configuration

SQJ463

Contextual Info: SQJ463EP Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) at VGS = - 10 V 0.010 RDS(on) (Ω) at VGS = - 4.5 V 0.015 ID (A) - 30 Configuration Single PowerPAK SO-8L Single S m 5m 6.1 • Halogen-free According to IEC 61249-2-21

Contextual Info: SQM18N33-160H Vishay Siliconix Automotive N-Channel 330 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 330 RDS(on) () at VGS = 10 V 0.160 ID (A) • TrenchFET Power MOSFET 31 Configuration

71508

Contextual Info: SQ3481EV Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedc

Contextual Info: CMOS TESTING CONSIDERATIONS Special test board considerations must be taken into account when applying high-speed CMOS products to the automatic test environment. Large output currents are being switched in very short periods and proper testing demands that test set-ups have