S1016 Search Results
S1016 Datasheets (8)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| S1016 | Unknown | NEIGUNGSSCHALTER PVC ISOLIERT 16 Deg | Original | 13.18KB | 1 | ||
| S101644003 | Semikron | Flat Panel | Scan | 70.67KB | 1 | ||
| S1016A | Applied Micro Circuits | ACTIVE ECL TERMINATOR | Scan | 268.07KB | 7 | ||
| S1016B | Applied Micro Circuits | ACTIVE ECL TERMINATOR | Scan | 268.07KB | 7 | ||
| S1016N | Teccor Electronics | D 2 Pak SCR | Original | 158.36KB | 8 | ||
| S1016R | Teccor Electronics | SCR | Original | 146.46KB | 14 | ||
| S1016R | Loras Industries | SILICON CONTROLLED RECTIFIER,600V V(DRM),8A I(T),TO-202 | Scan | 730.74KB | 10 | ||
| S1016R | Teccor Electronics | Thyristor, 16 amperes, 100 volt | Scan | 1.63MB | 12 |
S1016 Price and Stock
TAIYO YUDEN NS10165T100MNA- Tape and Reel (Alt: NS10165T100MNA) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NS10165T100MNA | Tape & Reel | 1,000 | 8 Weeks | 500 |
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NS10165T100MNA | Reel | 2,000 |
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NS10165T100MNA | 24 |
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TAIYO YUDEN NS10165T1R5NNVVInductor Chip Wirewound 1.5uH 30% 8.04A Embossed T/R - Product that comes on tape, but is not reeled (Alt: 95AJ6810) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NS10165T1R5NNVV | Ammo Pack | 1 |
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Get Quote | ||||||
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NS10165T1R5NNVV | Cut Tape | 2,000 | 1 |
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| NS10165T1R5NNVV | Tape & Reel | 2,000 | 10 |
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Radiall VS101624CVS 02R 14S-2P F4 - Bulk (Alt: VS101624) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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VS101624 | Bulk | 10 Weeks | 100 |
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Vishay Intertechnologies RCMS1016902FHS09- Bag (Alt: RCMS1016902FHS09) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RCMS1016902FHS09 | Bag | 6 Weeks | 100 |
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Vishay Intertechnologies RCMS1016R90FHS09- Bag (Alt: RCMS1016R90FHS09) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RCMS1016R90FHS09 | Bag | 6 Weeks | 100 |
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Buy Now | |||||
S1016 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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tj-2 94v
Abstract: S1002U S10162
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s1002us10119s1016222jan91+5 | |
WCFS1016C1CContextual Info: S1016C1C S1016C1C 64K x 16 Static RAM Features • High speed — tAA = 12, 15 ns • CMOS for optimum speed/power • Automatic power-down when deselected • Independent control of upper and lower bits • Available in 400-mil SOJ Functional Description |
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s1016c1cwcfs1016c1c400-mili/o16+3 | |
S6025
Abstract: S1055M S8025 S4008 S0525 S4025 SCR S1055m S8055R S1070W S6020
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o-218aco-202abo-218xo-220ab+11 | |
si7997Contextual Info: SPICE Device Model Si7997DP Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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si7997dp18-jul-08si7997 | |
S10-1617Contextual Info: SPICE Device Model Si4004DY Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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si4004dy18-jul-08s10-1617 | |
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Contextual Info: SPICE Device Model Si7629DN Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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si7629dn18-jul-08 | |
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Contextual Info: SPICE Device Model SiZ710DT Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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siz710dt18-jul-08 | |
Si4401DDYContextual Info: SPICE Device Model Si4401DDY Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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si4401ddy18-jul-08 | |
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Contextual Info: SPICE Device Model SiS454DN Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sis454dn18-jul-08 | |
EC2 WS-501
Abstract: WS-1080 ws353 WS-1070 WS-2028 WS-516 WS-3507 WS-3510 WS-3570 WS-20130
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250nsws-20110ws-20120ws-20130+13 | |
TRIAC zo 607 MA
Abstract: ZO 607 TRIAC Westinghouse SCR handbook tl-130 transformer BRX49 equivalent 800w class d circuit diagram schematics triac MAC 97 AB triac MAC 97 A6 ZO 103 TRIAC 1N5760
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dl137/dmay-2000r14525triac zo 607 ma+9 | |
BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
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bap1321-02bap65-05bap65-03bap65-05w+16 | |
UJT-2N2646 PIN DIAGRAM DETAILS
Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
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semi260ty510ty6004ty6008+14 | |
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Contextual Info: SQS466EEN Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () at VGS = 10 V 0.048 RDS(on) () at VGS = 4.5 V 0.074 ID (A) 8 Configuration Single PowerPAK 1212-8 D S 3.30 mm • Halogen-free According to IEC 61249-2-21 |
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sqs466een2002/95/ecaec-q101sqs466een-t1-ge3+1 | |
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S1016
Abstract: S1017
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s1012s1017s1016 | |
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Contextual Info: IRFZ20, SiHFZ20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 50 RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 17 Qgs (nC) 9.0 Qgd (nC) 3.0 Configuration Single Extremely Low RDS(on) Compact Plastic Package Fast Switching |
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irfz20sihfz202002/95/eco-220ab+3 | |
TRIAC 97A6
Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
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OCR Scan |
od-80od-323ot-23ot-89+13 | |
BT 812 600bw
Abstract: BT810 800BW BT810-800BW BT 808 600C BT 808 600 replacement TYN412 TYN408G TYN604 T2513MK TLS106-4
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OCR Scan |
2n60712n6071a2n60732n6073a+16 | |
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Contextual Info: SQ4920EY Vishay Siliconix Automotive Dual N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) () at VGS = 10 V 0.016 • TrenchFET Power MOSFET RDS(on) () at VGS = 4.5 V |
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sq4920ey2002/95/ecaec-q101sq4920ey-t1-ge3+1 | |
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Contextual Info: SQS466EEN Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () at VGS = 10 V 0.048 RDS(on) () at VGS = 4.5 V 0.074 ID (A) 8 Configuration Single PowerPAK 1212-8 D S 3.30 mm • Halogen-free According to IEC 61249-2-21 |
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sqs466een2002/95/ecaec-q101sqs466een-t1-ge3+1 | |
IRFZ20PBF
Abstract: SiHFZ20 IRFZ20
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irfz20sihfz202002/95/eco-220ab+2 | |
2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
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OCR Scan |
2n7588p3139bc233asprague 40d+6 | |
S10162Contextual Info: INTEGRATE» DEVI CE 3.4E D •'iiì * 4Ö S S 7 7 1 Q Q G 4 S S 1 T - ipdt Integrated DeviœTechnology, Inc IDT 54/74FGT827A/B IDT 54/74FCT828A/B* HIGH-PERFORMANCE CMOS BUFFERS T -S t'O l FEATURES: DESCRIPTION: • Faster tha n A M D ’s A m 29 827-28 serie s |
OCR Scan |
5s77100045h154/74fct827a/b54/74fct828a/b+6 | |
Triac bt 808 600C
Abstract: w2a smd transistor omron 8567 21EN15T044 awm 2919 pinout cable specification HT 25-19 transistor movement sensor pir cd 208 Ultrasonic Atomizing Transducer Balluff ROTARY ENCODER jhd 16a
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element-14triac bt 808 600cw2a smd transistoromron 8567+7 | |