S1 DIODE Search Results

40V 60A MOSFET

Abstract: Power Mosfet 75V 120A APTM08TDUM04P
Contextual Info: APTM08TDUM04P Triple dual common source MOSFET Power Module D5 G5 S3 S1 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 D4 D1 D6 D3 G1 S1/S2 D2 S1 Features • Power MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated

AP6901GSM

Abstract: AP-690
Contextual Info: AP6901GSM RoHS-compliant Product Advanced Power Electronics Corp. DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE CH-1 S1/D2 S1/D2 S1/D2 G1 ▼ Simple Drive Requirement ▼ DC-DC Converter Suitable ▼ Fast Switching Performance SO-8 S2/A G2 D1 D1 CH-2 Description

ap6900gsm

Contextual Info: AP6900GSM Pb Free Plating Product Advanced Power Electronics Corp. DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE CH-1 S1/D2 S1/D2 S1/D2 G1 ▼ Simple Drive Requirement ▼ DC-DC Converter Suitable ▼ Fast Switching Performance S2/A G2 SO-8 CH-2 D1 D1 Description

AP4816GSM

Contextual Info: AP4816GSM RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE CH-1 S1/D2 S1/D2 ▼ DC-DC Converter Suitable S1/D2 D1 ▼ Fast Switching Performance SO-8 G2 S2/A S2/A G1 CH-2 Description

SP6-P

Abstract: APT0502 APTM10TDUM19PG
Contextual Info: APTM10TDUM19PG Triple dual common source MOSFET Power Module D5 G5 S3 S1 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 D4 D1 D6 D3 G1 S1/S2 D2 S1 Features • Power MOS V MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated

APTM10TDUM09P

Contextual Info: APTM10TDUM09P Triple dual common source MOSFET Power Module D5 G5 S3 S1 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 D4 D1 D6 D3 G1 S1/S2 D2 S1 Features • Power MOS V MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated

APT0502

Abstract: APTM08TDUM04PG
Contextual Info: APTM08TDUM04PG Triple dual common source MOSFET Power Module D5 G5 S3 S1 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 D4 D1 D6 D3 G1 S1/S2 D2 S1 Features • Power MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated

APT0502

Abstract: APTM50TDUM65PG 400Vmin
Contextual Info: APTM50TDUM65PG Triple dual common source MOSFET Power Module D5 G5 S3 S1 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 D4 D1 D6 D3 G1 S1/S2 D2 S1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated

74ls279

Abstract: truth table NOT gate 74 SN54LSXXXJ SN74LSXXXD SN74LSXXXN 74LS279DC
Contextual Info: SN54/74LS279 QUAD SET-RESET LATCH VCC 16 S1 15 R Q 14 13 S1 12 S2 11 R 10 Q 9 QUAD SET-RESET LATCH LOW POWER SCHOTTKY 1 R 2 S1 3 S2 4 Q 5 R 6 S1 7 Q 8 GND J SUFFIX CERAMIC CASE 620-09 16 TRUTH TABLE INPUT 1 S1 S2 R OUTPUT Q L L X H H L X L H H L H H L H

APT0502

Abstract: APTM10TDUM09PG diode "S6 95"
Contextual Info: APTM10TDUM09PG Triple dual common source MOSFET Power Module G5 S3 S1 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 D4 D1 D6 D3 G1 S1/S2 D2 S1 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance

DIODE S4 72A

Abstract: APT0502 APTC60TDUM35P APTC60TDUM35PG diode S6 72A
Contextual Info: APTC60TDUM35PG Triple dual Common Source VDSS = 600V RDSon = 35mΩ max @ Tj = 25°C ID = 72A @ Tc = 25°C Super Junction MOSFET Power Module G3 S1 S3 G5 S5 S1/S2 S3/S 4 S5/ S6 S2 S4 S6 G2 G4 G6 D2 D4 Features • D6 • • • D1 D3 G1 S1/S2 D2 S1 D5 G3

APT0502

Abstract: APTC80TDU15PG
Contextual Info: APTC80TDU15PG Triple dual Common Source VDSS = 800V RDSon = 150mΩ max @ Tj = 25°C ID = 28A @ Tc = 25°C Super Junction MOSFET Power Module G5 S3 S1 S5 S1/S2 S3/S 4 S5/ S6 S2 S4 S6 G2 G4 G6 D2 D4 Features • D6 • • • D1 D3 G1 S1 /S2 D2 S1 D5 G3 S3/S4

Contextual Info: ADS1146 ADS1147 ADS1148 AD S1 148 AD S1 147 AD S1 146 www.ti.com SBAS453C – JULY 2009 – REVISED APRIL 2010 16-Bit Analog-to-Digital Converters for Temperature Sensors Check for Samples: ADS1146, ADS1147, ADS1148 FEATURES DESCRIPTION • • • • •

APT0502

Abstract: APTM20TDUM16PG 104-A diode s4 53
Contextual Info: APTM20TDUM16PG Triple dual common source MOSFET Power Module D3 G3 G5 S3 S1 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 D4 D1 D6 D3 G1 S1/S2 D2 S1 D5 G3 S3/S4 S3 G5 S5/S6 S5 S2 S4 S6 G2 G4 G6 D4 D6 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance

LN9926GEO

Contextual Info: LESHAN RADIO COMPANY, LTD. ▼ Low on-resistance LN9926GEO ▼ Capable of 2.5V gate drive ▼ Low drive current ▼ Surface mount package ▼ Pb-Free package is available G2 S2 D2 S2 S1 TSSOP-8 D1 D1 G1 G1 S1 D2 G2 S1 S2 Absolute Maximum Ratings Parameter

Contextual Info: AD ¨ S1 22 5 AD S1 ADS1225 ADS1226 ¨ 22 6 www.ti.com . SBAS346C – MAY 2006 – REVISED JANUARY 2009 24-Bit Analog-to-Digital Converter

Contextual Info: AD ¨ S1 22 5 AD S1 ADS1225 ADS1226 ¨ 22 6 www.ti.com . SBAS346C – MAY 2006 – REVISED JANUARY 2009 24-Bit Analog-to-Digital Converter

Si6963BDQ

Contextual Info: Si6963BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.9 0.080 at VGS = - 2.5 V - 3.0 • Halogen-free RoHS COMPLIANT S2 S1 TSSOP-8 D1 1 S1 2 S1 3 G1 4 Si6963BDQ G2

APTM50TDUM65P

Contextual Info: APTM50TDUM65P Triple dual common source MOSFET Power Module D5 G3 G1 G5 S3 S1 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 D4 D1 D3 D2 S1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated

igbt 500V 22A

Abstract: APTM100TDU35P
Contextual Info: APTM100TDU35P Triple dual common source MOSFET Power Module D5 G3 G1 G5 S3 S1 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 D4 D1 D3 D2 S1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated

S6 85A

Abstract: APTM120TDU57P s4 85a gs1510 igbt 600v, dual
Contextual Info: APTM120TDU57P Triple dual common source MOSFET Power Module D5 G3 G1 G5 S3 S1 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 D4 D1 D3 D2 S1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated

Si6963BDQ

Contextual Info: Si6963BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.9 0.080 at VGS = - 2.5 V - 3.0 • Halogen-free RoHS COMPLIANT S2 S1 TSSOP-8 D1 1 S1 2 S1 3 G1 4 Si6963BDQ G2

Contextual Info: Si6969BDQ New Product Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -12 rDS(on) (W) ID (A) 0.030 @ VGS = -4.5 V -4.6 0.040 @ VGS = -2.5 V - 3.8 0.055 @ VGS = -1.8 V - 3.0 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 D Si6969BDQ G1 8 D2 7 S2

Contextual Info: Si6953DQ Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 20 rDS(on) (W) ID (A) 0.17 @ VGS = –10 V "1.9 0.32 @ VGS = –4.5 V "1.3 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 D 8 Si6953DQ 7 3 6 4 5 D2 S2 S2 G2 G1 G2 Top View D1 D2 P-Channel MOSFET