S1 DIODE Search Results

AP6901GSM

Abstract: AP-690
Contextual Info: AP6901GSM RoHS-compliant Product Advanced Power Electronics Corp. DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE CH-1 S1/D2 S1/D2 S1/D2 G1 ▼ Simple Drive Requirement ▼ DC-DC Converter Suitable ▼ Fast Switching Performance SO-8 S2/A G2 D1 D1 CH-2 Description

AP4816GSM

Contextual Info: AP4816GSM RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE CH-1 S1/D2 S1/D2 ▼ DC-DC Converter Suitable S1/D2 D1 ▼ Fast Switching Performance SO-8 G2 S2/A S2/A G1 CH-2 Description

APT0502

Abstract: APTM10TDUM09PG diode "S6 95"
Contextual Info: APTM10TDUM09PG Triple dual common source MOSFET Power Module G5 S3 S1 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 D4 D1 D6 D3 G1 S1/S2 D2 S1 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance

HCS300 transmitter

Abstract: NTQ105 HCS200 HCS300 HCS301 transmitter low cost eeprom programmer circuit diagram ntq109 PG306001 AN644 HCS301
Contextual Info: AN644 Converting NTQ104/105/106 Designs to HCS200/300s Author: Kobus Marneweck Microchip Technology Inc. 1 S1 2 S2 3 S3 4 8 VDD 7 LED 6 PWM 5 VSS 8 VDD 7 NC 6 PWM PDIP/SOIC S0 1 S1 2 S2/CLK 3 NC 4 5 VSS S0 1 8 VDD S1 2 7 LED S2 3 6 PWM S3/CLK 4 5 VSS HCS200

Si6965DQ

Contextual Info: Si6965DQ Vishay Siliconix P-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.035 @ VGS = –4.5 V "5.0 0.060 @ VGS = –2.5 V "3.9 S1 S2 TSSOP-8 8 D 7 S2 3 6 S2 4 5 G2 D 1 S1 2 S1 G1 D Si6965DQ G1 G2 Top View D D P-Channel MOSFET

APTM100SKM90

Contextual Info: APTM100SKM90 Q1 G1 OUT S1 CR2 0/VBUS G1 VBUS 0/VBUS OUT S1 Application • AC and DC motor control • Switched Mode Power Supplies Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated

APTM100DUM90

Abstract: max7859
Contextual Info: APTM100DUM90 Dual Common Source MOSFET Power Module D1 Application D2 Q1 Q2 G1 G2 S1 S2 S D1 S D2 S1 • • • AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance

AP9920GEO

Contextual Info: AP9920GEO Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low on-resistance G2 S2 ▼ Capable of 2.5V gate drive D2 ▼ Optimal DC/DC battery application S2 TSSOP-8 S1 G1 S1 BVDSS 30V RDS ON 28mΩ ID D1

Contextual Info: AP9938GEO-HF Halogen-Free Product Advanced Power Electronics Corp. DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET G2 S2 Low on-resistance D2 BVDSS S2 Capable of 1.8V Gate Drive G1 S1 TSSOP-8 Optimal DC/DC Battery Application S1 20V RDS ON 18m ID D1 6A Halogen Free & RoHS Compliant Product

APTM50AM35FT

Abstract: JESD24-1
Contextual Info: APTM50AM35FT VDSS = 500V RDSon = 35mW max @ Tj = 25°C ID = 99A @ Tc = 25°C Phase leg MOSFET Power Module VBUS NTC2 Q1 G1 OUT S1 Q2 G2 S2 0/VBUS G2 S2 VBUS 0/VBUS NTC1 OUT OUT S1 S2 NTC2 G1 G2 NTC1 Application • Welding converters · Switched Mode Power Supplies

Contextual Info: APTM120TDU57PG Triple dual common source MOSFET Power Module D3 D1 D5 G3 G1 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 D4 D1 D3 D2 S1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated

Contextual Info: AP6982GM Pb Free Plating Product Advanced Power Electronics Corp.  Low On-resistance DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET CH-1 D2 D2 D2 D1 D2 D1 D1 D1  Fast Switching Characteristic  Surface Mount Package G2 G2 SO-8 SO-8 S2 G1 S2 S1 G1 S1 CH-2 Description

AP6982GM

Contextual Info: AP6982GM Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low On-resistance DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET CH-1 D2 D2 D2 D1 D2 D1 D1 D1 ▼ Fast Switching Characteristic ▼ Surface Mount Package G2 G2 SO-8 SO-8 S2 G1 S2 S1 G1 S1

DFN33

Contextual Info: AP2428GN3 RoHS-compliant Product Advanced Power Electronics Corp. ▼ Bottom Exposed DFN N-CHANNEL ENHANCEMENT MODE POWER MOSFET D1 D1 ▼ Low On-resistance D2 D2 ▼ Lower Profile DFN3*3 D2 G1 S1 BVDSS 30V RDS ON 27mΩ ID S2 G2 5.5A D1 D1 G1 D2 G2 S1 S2

Contextual Info: APTM10TAM19FPG Triple phase leg MOSFET Power Module VBUS3 G1 G3 G5 S1 S3 S5 U G2 S2 0/VBUS1 V G4 G6 S4 S6 0/VBUS2 0/VBUS3 VBUS 1 VBUS 2 G1 0/VBUS 1 U W S1 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package

APT0406

Abstract: APT0501 APT0502 APTM50AM35FTG vds250
Contextual Info: APTM50AM35FTG VDSS = 500V RDSon = 35mΩ typ @ Tj = 25°C ID = 99A @ Tc = 25°C Phase leg MOSFET Power Module Q1 G1 OUT S1 Q2 G2 S2 0/VBUS G2 S2 VBUS 0/VBUS NTC1 OUT OUT S1 S2 NTC2 G1 G2 NTC1 Application • Welding converters • Switched Mode Power Supplies

mosfet 400a 200V

Abstract: APT0502 APT0601 APTM10SKM02G
Contextual Info: APTM10SKM02G VDSS = 100V RDSon = 2.25mΩ typ @ Tj = 25°C ID = 495A @ Tc = 25°C Buck chopper MOSFET Power Module Application Q1 • • OUT Features • S1 CR2 0/VBUS • • • G1 VBUS 0/VBUS OUT S1 Power MOS V MOSFETs - Low RDSon - Low input and Miller capacitance

APT0406

Abstract: APTM10DUM05T thermistor ntc 103
Contextual Info: APTM10DUM05T VDSS = 100V RDSon = 4.5mΩ typ @ Tj = 25°C ID = 278A @ Tc = 25°C Dual common source MOSFET Power Module D2 Q1 Q2 G1 G2 S1 S2 S NTC1 NTC2 G2 S2 VBUS 0/VBUS OUT OUT S1 S2 NTC2 G1 G2 NTC1 Features • Power MOS V MOSFETs - Low RDSon - Low input and Miller capacitance

Contextual Info: APTM20AM08FTG VDSS = 200V RDSon = 8mΩ typ @ Tj = 25°C ID = 208A @ Tc = 25°C Phase leg MOSFET Power Module VBUS NT C2 Q1 G1 OUT S1 Q2 G2 S2 0/VBUS NT C1 G2 S2 VB US 0/VBUS OUT OUT S1 S2 NTC2 G1 G2 NTC1 Application • Welding converters • Switched Mode Power Supplies

SI6925AD

Abstract: pc based electronic notice board SI6925ADQ
Contextual Info: Si6925ADQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.045 at VGS = 4.5 V 3.9 0.055 at VGS = 3.0 V 3.5 0.065 at VGS = 2.5 V 3.0 • Halogen-free RoHS COMPLIANT D2 D1 TSSOP-8 D1 1 S1 2 S1 3 G1

APT0406

Abstract: APT0501 APT0502 APTM10DUM05TG
Contextual Info: APTM10DUM05TG VDSS = 100V RDSon = 4.5mΩ typ @ Tj = 25°C ID = 278A @ Tc = 25°C Dual common source MOSFET Power Module D2 Q2 G1 G2 S1 S2 S NTC1 NTC2 G2 S2 VBUS 0/VBUS OUT OUT S1 S2 NTC2 G1 G2 NTC1 Features • Power MOS V MOSFETs - Low RDSon - Low input and Miller capacitance

APT0406

Abstract: APT0501 APT0502 APTM20DUM10TG
Contextual Info: APTM20DUM10TG VDSS = 200V RDSon = 10mΩ typ @ Tj = 25°C ID = 175A @ Tc = 25°C Dual common source MOSFET Power Module Q1 Q2 G1 G2 S1 S2 S NTC1 NT C2 G2 S2 D1 S D2 D2 S1 S2 NTC2 G1 G2 NTC1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance

APT0406

Abstract: APT0501 APT0502 APTM50DUM35TG
Contextual Info: APTM50DUM35TG VDSS = 500V RDSon = 35mΩ typ @ Tj = 25°C ID = 99A @ Tc = 25°C Dual common source MOSFET Power Module Q1 Q2 G1 G2 S1 S2 S NT C1 NTC2 G2 S2 D1 S D2 D2 S1 S2 NTC2 G1 G2 NTC1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance

Contextual Info: AP9924GO RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low on-resistance S2 D ▼ Capable of 2.5V gate drive G2 S2 G1 ▼ RoHS Compliant TSSOP-8 D S1 BVDSS 20V RDS ON 20mΩ ID S1 Description 6.8A D Advanced Power MOSFETs from APEC provide the