S09006 Search Results

IRFP350LC

Contextual Info: IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.30 Qg (Max.) (nC) 76 Qgs (nC) 20 Qgd (nC) 37 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247

IRFIBF30GPBF

Abstract: IRFIBF30G SiHFIBF30G SiHFIBF30G-E3
Contextual Info: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm

IRFI9634G

Abstract: SiHFI9634G SiHFI9634G-E3
Contextual Info: IRFI9634G, SiHFI9634G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 250 RDS(on) (Ω) VGS = - 10 V 1.0 Qg (Max.) (nC) 38 Qgs (nC) 8.0 Qgd (nC) 18 Configuration Single S TO-220 FULLPAK DESCRIPTION Third generation Power MOSFETs from Vishay provide the

IRFPE30

Contextual Info: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration Available • Repetitive Avalanche Rated 3.0 • Isolated Central Mounting Hole

ENV50204

Abstract: S09005
Contextual Info: LHR, LGR 4/5000 Series 10.30 Watt AC-DC Converters Input voltage ranges 85.265 V AC 88…168 V DC 1 or 2 outputs up to 48 V DC 4300 V DC I/O electric strength test voltage LGA • Class II equipment double insulation • Short circuit protection • Compact, low cost solution

SiHFI9Z14G

Contextual Info: IRFI9Z14G, SiHFI9Z14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature

Contextual Info: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm

IRFIB5N50L

Abstract: SiHFIB5N50L-E3
Contextual Info: IRFIB5N50L, SiHFIB5N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.67 RoHS COMPLIANT Qg (Max.) (nC) 45 Qgs (nC) 13 • Lower Gate Charge Results in Simpler Drive

SiHFI9Z24G

Contextual Info: IRFI9Z24G, SiHFI9Z24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature

SiHFIZ24G

Contextual Info: IRFIZ24G, SiHFIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating

Contextual Info: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm

IRFIB7N50L

Abstract: SiHFIB7N50L SiHFIB7N50L-E3 ktp12
Contextual Info: IRFIB7N50L, SiHFIB7N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.320 Qg (Max.) (nC) 92 Qgs (nC) 24 Qgd (nC) 44 Configuration

SiHFB16N60L-E3

Abstract: w s p 1620 transformer IRFB16N60L SiHFB16N60L
Contextual Info: IRFB16N60L, SiHFB16N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V 0.385 • Lower Gate Charge Results in Simpler Drive Requirements

SiHFIZ24G

Contextual Info: IRFIZ24G, SiHFIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating

Contextual Info: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm

IRFZ44 mosfet

Abstract: IRFZ44 TO-263 IRFZ44 equivalent SiHFZ44L IRFZ44L IRFZ44S SiHFZ44L-E3 SiHFZ44S SiHFZ44S-E3
Contextual Info: IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.028 Qg (Max.) (nC) 67 Qgs (nC) 18 Qgd (nC) 25 Configuration Single G G D RoHS* COMPLIANT Third generation Power MOSFETs from Vishay utilize

IRFP140

Contextual Info: IRFP140, SiHFP140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 rDS(on) (Ω) VGS = 10 V 0.077 Qg (Max.) (nC) 72 Qgs (nC) 11 Qgd (nC) 32 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated

D2Pak Package vishay material

Abstract: IRLZ44S SiHLZ44S SiHLZ44S-E3
Contextual Info: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 5.0 V 0.028 Qg (Max.) (nC) 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single D • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

IRFS11N50APBF

Abstract: IRFS11N50A SiHFS11N50A SiHFS11N50A-E3
Contextual Info: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.52 Qg (Max.) (nC) 52 Qgs (nC) 13 Qgd (nC) 18 Configuration • Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm

Contextual Info: IRFB9N30A, SiHFB9N30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dv/dt Rating 300 RDS(on) (Ω) VGS = 10 V 33 Qgs (nC) 6.9 Qgd (nC) 12 Configuration RoHS* • Repetitive Avalanche Rated 0.45 Qg (Max.) (nC) Available COMPLIANT

SiHFI9634G

Contextual Info: IRFI9634G, SiHFI9634G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 250 RDS(on) (Ω) VGS = - 10 V 1.0 Qg (Max.) (nC) 38 Qgs (nC) 8.0 Qgd (nC) 18 Configuration Single S TO-220 FULLPAK DESCRIPTION Third generation Power MOSFETs from Vishay provide the

IRFSL11N50A

Abstract: SiHFSL11N50A SiHFSL11N50A-E3
Contextual Info: IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 51 Qgs (nC) 12 Qgd (nC) 23 Configuration RoHS* • Fast Switching COMPLIANT • Ease of Paralleling

IRFIZ24G

Abstract: SiHFIZ24G SiHFIZ24G-E3
Contextual Info: IRFIZ24G, SiHFIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating