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Bel Fuse NVS01YG-M6G Isolated Surface Mount DC/DC Converter, Industrial & ITE, 2:1, 5 W, 1 Output, Fixed, 5 V, 1 A - Bulk (Alt: NVS01YG-M6G)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	NVS01YG-M6G	Bulk		36 Weeks	280	1 - 10 - 100 - 1000 $101.35 10000 $93.75	Buy Now
Avnet Abacus	NVS01YG-M6G			22 Weeks	28	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Tripp Lite N262-S01-YW Enet Cbl, Cat6A, Rj45 Plug To Rj45 Plug; \|Eaton Tripp Lite N262-S01-YW
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	N262-S01-YW	Bulk			1	1 $9.74 10 $8.28 100 $7.03 1000 $6.59 10000 $6.59	Buy Now
RS	N262-S01-YW	Bulk	25	2 Weeks	1	1 $9.93 10 $9.93 100 $9.04 1000 $9.04 10000 $9.04	Buy Now
Master Electronics	N262-S01-YW					1 - 10 $8.58 100 $6.66 1000 $5.95 10000 $5.72	Buy Now
Tripp Lite N261-S01-YW Enet Cbl, Cat6A, Rj45 Plug To Rj45 Plug; \|Eaton Tripp Lite N261-S01-YW
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	N261-S01-YW	Bulk			1	1 $8.98 10 $8.62 100 $8.08 1000 $7.90 10000 $7.90	Buy Now
Master Electronics	N261-S01-YW					1 - 10 $8.02 100 $6.22 1000 $5.56 10000 $5.35	Buy Now
Balluff Inc BES01YA (BES R04KC-PSC15B-EP00,13-GS49) INDUCTIVE SENSOR, 1.5 MM RANGE, FLUSH, PNP-NO, 10-30 VDC, BES SERIES
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	BES01YA (BES R04KC-PSC15B-EP00,13-GS49)	Bulk	10	3 Weeks	1	1 $120.51 10 $120.51 100 $120.51 1000 $120.51 10000 $120.51	Buy Now
Balluff Inc BES01YT (BES R04KC-PSC25F-EV02) PROXIMITY SENSOR, BES R04KC-PSC25F-EV02
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	BES01YT (BES R04KC-PSC25F-EV02)	Bulk	3		1	1 $126.72 10 $115.32 100 $115.32 1000 $115.32 10000 $115.32	Buy Now

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S01Y Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
st9401 Abstract: MARKING TR SOT23-3 P MOSFET MOSFET P-Channel sot-23 MOSFET P channel SOT-23 marking 415* sot23 P-Channel SOT-23 Power MOSFET MARKING CODE 16 transistor sot23 V1 SOT23-3 12V 30A 3 pin mosfet *S01Y Contextual Info: ST9401 P Channel Enhancement Mode MOSFET -3.0A DESCRIPTION ST9401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for	Original	st9401 ot-23 -20v/-2 marking tr sot23-3 p mosfet +8mosfet p-channel sot-23 mosfet p channel sot-23 marking 415* sot23 p-channel sot-23 power mosfet marking code 16 transistor sot23 v1 sot23-3 12v 30a 3 pin mosfet s01y	PDF
12V 30A 3 pin mosfet Abstract: MARKING TR SOT23-3 P MOSFET st2301A MOSFET P-channel SOT-23 MOSFET P channel SOT-23 marking 415 sot23 MOSFET P SOT-23 MARKING CODE 16 transistor sot23 P channel MOSFET 1A mosfet 20v 30A Contextual Info: ST2301A P Channel Enhancement Mode MOSFET -3.0A DESCRIPTION ST2301A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for	Original	st2301a ot-23 -20v/-2 12v 30a 3 pin mosfet +8marking tr sot23-3 p mosfet mosfet p-channel sot-23 mosfet p channel sot-23 marking 415 sot23 mosfet p sot-23 marking code 16 transistor sot23 p channel mosfet 1a mosfet 20v 30a	PDF
SPP2301D Abstract: MOSFET P-channel SOT-23 SPP2301DS23RG P-Channel SOT-23 Power MOSFET SPP2301DS23RGB mosfet vgs 5v mosfet vgs 5v SOT23 24A SOT23 Contextual Info: SPP2301D P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2301D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	spp2301d -20v/-2 mosfet p-channel sot-23 spp2301ds23rg +5p-channel sot-23 power mosfet spp2301ds23rgb mosfet vgs 5v mosfet vgs 5v sot23 24a sot23	PDF
D78011BY Abstract: KBR-1000Y d78013 Contextual Info: DATA SHEET / MOS INTEGRATED CIRCU /#D78011BY,78012BY,78013Y,78014 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION T h e ¿ /P D 7 8 0 1 1 B Y , / /P D 7 8 0 1 2 B Y , /iP D 7 8 0 1 3 Y a n d ¿ iP D 7 8 0 1 4 Y , ¿ iP D 7 8 0 1 4 Y s u b -s e r ie s p r o d u c ts o f th e 7 8 K /0 s e rie s ,	OCR Scan	d78011by 78012by 78013y /ipd78011bycw-xxx +7ipd78012bycw-xxx /ipd78013ycw-xxx /ipd78014ycw-xxx 64-pin 750mil kbr-1000y d78013	PDF
Contextual Info: ST2301A P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2301A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for	Original	st2301a ot-23 -20v/-3 -20v/-2	PDF
A-4174-24 Abstract: bt 7377 7512-24 NE51 A9aC Lamp 7387 B6A NE-21 82417 NE51H ne 51h Contextual Info: 1080 Johnson Drive Buffalo Grove, IL 60089 708-459-3400 Fax 708-459-2708 f lH H i C h ic a g o M iniature WHERE INNOVATION COMES TO LIGHT Index A-4174-24. .54 A-4174-24X. . 54 A-7079B-24. . 54	OCR Scan	cmd6752 -4174-24x -7079b-24 796a-p4 +10a-4174-24 bt 7377 7512-24 ne51 a9ac lamp 7387 b6a ne-21 82417 ne51h ne 51h	PDF
MOSFET P-channel SOT-23 Abstract: sot-23 P-Channel MOSFET ST2301 MOSFET NOTEBOOK MOSFET P channel SOT-23 p-channel mosfet transistor low power Contextual Info: P Channel Enchancement Mode MOSFET ST2301 -2.8A DESCRIPTION The ST2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	st2301 ot-23-3l -20v/-2 120m-ohm +6170m-ohm mosfet p-channel sot-23 sot-23 p-channel mosfet mosfet notebook mosfet p channel sot-23 p-channel mosfet transistor low power	PDF