S M 685 13A Search Results

tyco transformer

Abstract: transformer PLC E87824
Contextual Info: r THIS MAWtMÖ e UNPUBLISHED. > iCOPYRIGHT RELEASED P M PUBUCAtiöN LOG ALL RIGHTS RESERVED. - _ BY TYCO ELECIRONKS DIST REVISIONS GZ 00 DESCRIPTION 0611 - 0 4 6 1 -0 2 50 ±.031 .1 8 8 DIA. 13AUG03 - NOTES-ALL LEADS 18AWG— UNLESS OTHERWISE SPECIFIED 1. DIMENSIONS FOR REFERENCE

ACT212

Abstract: act512 ACT112 RELAY 66710
Contextual Info: CT ACT SUPER MINIATURE TWIN TYPE AUTOMOTIVE RELAY 17.4 .685 14 .551 13.5 .531 Twin type (8 terminals) 17.4 .685 7.2 .283 13.5 .531 CT RELAYS (ACT) FEATURES TYPICAL APPLICATIONS • Small & slim size Twin type: 17.4(L)14.0(W)13.5(H)mm .685(L).551(W).531(H)inch

act212

Abstract: dc motor forward reverse control ACT112 ACT512 motor forward reverse control
Contextual Info: CT ACT SUPER MINIATURE TWIN TYPE AUTOMOTIVE RELAY 17.4 .685 14 .551 13.5 .531 Twin type (8 terminals) 7.2 .283 17.4 .685 13.5 .531 CT RELAYS (ACT) FEATURES TYPICAL APPLICATIONS • Small & slim size Twin type: 17.4(L)14.0(W)13.5(H)mm .685(L).551(W).531(H)inch

22a ic

Abstract: IRGPH30S
Contextual Info: Preliminary Data Sheet PD - 9.1139 IRGPH30S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz VCES = 1200V VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 13A

IRF*260

Abstract: IRFM260 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 91388B POWER MOSFET THRU-HOLE TO-254AA IRFM260 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM260 0.060 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

IRGMC30U

Abstract: 90715
Contextual Info: PD -90715B IRGMC30U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation > 10 kHz Switching-loss rating includes all "tail" losses

TO-247AC Package

Abstract: 22a ic TO-3P Jedec package outline IRGPH30S S M 685 13A VCC80 irg*PH30S
Contextual Info: Preliminary Data Sheet PD - 9.1139 IRGPH30S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz VCES = 1200V VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 13A

IRGMC40U

Contextual Info: PD -90717B IRGMC40U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation > 10 kHz Switching-loss rating includes all "tail" losses

IRGMC40F

Abstract: bipolar transistor td tr ts tf
Contextual Info: PD -90716B IRGMC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz Switching-loss rating includes all "tail" losses

bipolar transistor td tr ts tf

Abstract: IRF 260 N IRGMC30F
Contextual Info: PD -90714B IRGMC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses

IRF 260 N

Abstract: MOSFET 1000v 30a IRGMC50F
Contextual Info: PD -90718B IRGMC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz Switching-loss rating includes all "tail" losses

IRGMC50U

Contextual Info: PD -90719B IRGMC50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation > 10 kHz Switching-loss rating includes all "tail" losses

IRGMH40F

Abstract: S M 685 13A
Contextual Info: PD -91418B IRGMH40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses

251M1002

Abstract: ic 6301 22 J.63 capacitor
Contextual Info: To meet the users’ demands for smaller and high-function portable information devices, we developed compact and low profile tantalum capacitors with appropriately designed mounting area for high-density mounting ahead of other companies. The capacitors are widely used in portable information and telecommunication equipment, such as mobile phones and PHS, digital video

Contextual Info: PD -94313 IRG4MC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses

Contextual Info: PD -94274A IRG4MC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses

IRG4MC40U

Contextual Info: PD -94305 IRG4MC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • • • • Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast Speed Operation 3kHz - 40kHz, > 200kHz in Resonent Mode • High Operating Frequency

Contextual Info: P- 251 - E013 TYPE 251 To meet the users’ demands for smaller and high-function portable information devices, we developed compact and low profile tantalum capacitors with appropriately designed mounting area for high-density mounting ahead of other companies.

IRG4MC50F

Contextual Info: PD -94274A IRG4MC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses

Contextual Info: PD -94273A IRG4MC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency

WE 251

Abstract: HOT 51011 W6 13A Diode 2306U
Contextual Info: TYPE 251 To meet the users’ demands for smaller and high-function portable information devices, we developed compact and low profile tantalum capacitors with appropriately designed mounting area for high-density mounting ahead of other companies. The capacitors are widely used in portable information and telecommunication equipment, such as mobile phones and PHS, digital video

Contextual Info: TYPE 251 To meet the users’ demands for smaller and high-function portable information devices, we developed compact and low profile tantalum capacitors with appropriately designed mounting area for high-density mounting ahead of other companies. The capacitors are widely used in portable information and telecommunication equipment, such as mobile phones and PHS, digital video

IRG4MC50U

Contextual Info: PD -94273A IRG4MC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency

Contextual Info: PD -94305A IRG4MC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • • • • Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast Speed Operation 8kHz - 40kHz, > 200kHz in Resonent Mode • High Operating Frequency