S BAND Search Results

FLC081XP

Abstract: FLC253MH-6 FLC253MH-8 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA
Contextual Info: - 132 - m % tí: € m & m s f =£ t * 1 H % K V tm * {S) a * i» (A) % S të ^ VGS* ñ * P d /P c h (W) Igs s ; (max) (A) Vos (V) m (min) (max) Vd s (A) (A) (V) te (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (S) Id (A) Vd s (V) b (A) FHX05X X-Band LN A

BZ-3RDS15T-S

Contextual Info: MICRO SWITCH FREEPORT ILLI NOI S. U S A A DI VI SI ON OF FED . C AT ALO G M F C . BZ-3RDS15T-S S W IT C H -B A S IC HONEYWELL C O D E LISTIN G 91828 CO SILICONE ELASTOMER PLUNGER SEAL SECURED TO COMPONENTS BY EXTERNAL BANDING AND SPRING RETAINING RING C O R R O S IO N R E S I S T A N T

Contextual Info: < > z •H S -A 3 —4 os o o M es ««I s cn CO O» S' S' CD M 3 CD V» ita transmission lerface module -1 CD O S* ilecontrol, telemetering itenna module —4 3 IN» a> a > M <’ c/i n s 3D a. 5* S' e 5" triable bandpass fillers > Type ■H X ro ro —i

2sc 1203

Abstract: xn 1203 Am 4541 kp 1830 transistors 2SA 2sc 1735
Contextual Info: S m a ll-S u p e r Mini D iode S S M T yp e No. 1SS364 A pplic atio n V H F T V Band S W V r (V ) 30 E le c trica l C h a ra c te rla tic s (T a *2 5 °C ) r8 ( 0 ) iF(m A ) C T (p F ) 50 1.2 W A X 0 .9 M A X M a rk S im ila r R e m a rk s BF 1S S 3 1 2

2SC1200

Abstract: feed through capacitor
Contextual Info: SILICON NPN EPITAXIAL PLANAR TRANSISTOR O UHF - S ^ K I Î J Ü S f f l O UHF ù o il ft X UHF~S Band Power A m p lifie r A p p lic a tio n s . UHF-S Band O s c il l a t o r A p p lic a tio n s . * & f t ^ £ S g T =r V* mm INDUSTRIAL APPLICATIONS l^ o Lx*t> t-t*

2sc 3050 transistor

Abstract: 2SC392 251C L200 vaac
Contextual Info: s c s /U D > N P N it:9 * s /F J i/7 b -* fê h 5 :/s tt9 392 ^ _ SILICON NPN EPITAXIAL PLANAR TRANSISTOR O VHF, U H F * R F i» * ffl a VHF and UHF Band RF A m p lifier A p p llca tlo n e • I S U S rifift-r-f. NF=*ÆdB (T yp . • f S I Ü INDUSTRIAL APPLICATIONS

PO7C

Abstract: 2SC2380 2SC238
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2380 Unit in m m UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0 =12W Min. (f=470MHz, V C C=12.6V, Pi=3W) . 1 0 0 % T e s t e d f o r L o a d M i s m a t c h S t r e s s at A l l P h a s e A n g l e s w i t h 30:1 V S W R

TF328

Abstract: 125VN AMF4001 BZ-2RS55-A2-S abe 915
Contextual Info: MICRO SWITCH FREEPORT ILLINOIS. U S A A OF DIVISION CATALOG B Z -2 R S 5 5 -A 2 -S S W IT C H -B A S IC HONEYWELL LISTIN G AMF4001 F E D . M F S . C O D E 9 1929 9 1 7 ± .O I5 V evi HARDENED S T E E L PLUNGER BUNA N ELASTOMER PLUNGER S EA L SECURED TO C OM PONENTS BY E X T E R N A L BANDING AT

1SS135

Contextual Info: $ -f — K /D io d es 1SS135 1S S 135 '>U = ] > x 7 Silicon Epitaxial Planar Band Switching Mini-Diode K • W K s tiilll/ D im e n s io n s U n it : mm 2) 3) ifS/hS (DO-34) 5« -7-.— 4ASH 4) * ' 7 ^ - > - ; U T f S I S * T * - 5 <, • Features ^• A V tM iV S ' V A y r - r V

sti5

Abstract: nrzi 4b/5b circuit diagram MT90710 MT90710AP ST07 STO512
Contextual Info: CMOS MT90710 High-Speed Isochronous Multiplexer  Preliminary Information Features ISSUE 1 • Multiplexes eight 2.048 Mbit/s, ST-BUS links onto one serial high-speed 20.48 Mbit/s link • 15.808 Mbit/s clear bandwidth transport • Two 8 kbit/s and one 32 kbit/s oversampled

80km

Abstract: MAX 1532 GR-253-CORE
Contextual Info: 10 Gbps 80km DWDM Multirate XFP Transceiver Preliminary XPD-MR-08-xxCDA Features • XFP MSA Rev 4.5 compliant • Available in all 100GHz C-Band Wavelengths on the DWDM ITU Grid • 80km Reach • Supports 9.95Gb/s, 10.31Gb/s, 10.52Gb/s, 10.7Gb/s, and 11.1Gb/s

MAX 1532

Abstract: GR-253-CORE XPD-MR-04-xxCDA DWDM COLOR
Contextual Info: 10 Gbps 40km DWDM Multirate XFP Transceiver Preliminary XPD-MR-04-xxCDA Features • XFP MSA Rev 4.5 compliant • Available in all 100GHz C-Band Wavelengths on the DWDM ITU Grid • 40km Reach • Supports 9.95Gb/s, 10.31Gb/s, 10.52Gb/s, 10.7Gb/s, and 11.1Gb/s

Contextual Info: GE C P L E S S E Y S F M I C O N D U C T O K S DC1508/11/19 SILICON SCHOTTKY S-BAND MICROSTRIP LID MIXER DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance

s1071

Contextual Info: •TOSHIBA {DISCRETE/OPTO} 3T 9 0 9 7 2 50 T O S H I B A DËT| T D T O S D DD D D 4DÛ <DISCRETE/OPTO> m tiM m /fë M m 39C 0 04 08 O UHF ~ S O UHF ~ S o o UHF-'-S Band UHP'-'S Band O 7V $3 - C Y I ' b ' M t l i 11 ffl Power A m p lifie r A p p lic a tio n s ,

Contextual Info: QSFPO-40G-001.0-01 Q S FP O S E R IE S QSFP+ ACTIVE OPTICAL CABLE Lightweight S P E C IF IC A T IO N S 40 Gbps aggregate bandwidth 4 full duplex lanes, 10 Gbps/lane or 56 Gbps aggregate bandwidth (4 full duplex lanes, 14 Gbps/lane) Mates with QSFP8 For complete specifications

GX401

Abstract: 500nsl
Contextual Info: ►GENNUM □ R p> o n GX401 Monolithic 1x1 Video Crosspoint Switch A DATA SHEET FEATURES CIRCUIT DESCRIPTION • 100 MHz bandwidth -3 dB T h e G X 401 is a lo w c o s t m o n o lith ic 1x1 v id e o c r o s s p o in t s w itc h p lu s o n - b o a r d la tc h , d e s ig n e d p r im a r ily fo r u s e in

SPD221P

Contextual Info: SM YO Packaged Type GaAs Schottky Barrier Diodes The Sanyo SPD S e r i e s a r e pa cka ge d ty pe GaAs S c h o t t k y b a r r i e r d i o d e s d e s i g n e d f o r c o n v e r t e r s , o p e r a t e d i n th e X band 8 . 2 m o d u l a t o r s , d e t e c t o r s t h a t can be

LA Radiotechnique

Abstract: Ef 5000 pentode
Contextual Info: PEN TO D E A ÉM ISSIO N SECONDAIRE MO NTAG ES A LARGE BANDE EN IM P U L S IO N S EF 5000 Série “ Sécurité-Qualité " S.Q . C A R A C TÉ R IS TIQ U E S * Chauffage Indirect (cathode isolée du fila m e n t). V f = 6,3 V If = 0,37 A . C O N D IT IO N S N O M IN A L E S D ' E M P L O I

Contextual Info: 37bB5BS 00 1f ib 45 ^20 « P L S B pPgpi G E C P L E S S E Y S E M IC O N D U C T O R S DS3445-1.2 DW1105/06/08 160MHz PROFESSIONAL BANDPASS SAW FILTERS GPS have developed a range of Surface Acoustic Wave Filters suitable for use in radar, radio communications and

Contextual Info: rZ 7 ^ 7# S G S -T H O M S O N ¡L E O T O K S & TEA 5114A RGB SW ITC H IN G C IR C U IT 25 MHz BANDWIDTH C R O S S T A L K :5 5 dB SHO RT CIRCUIT TO GROUND OR Vcc PRO­ TECTED ANTI SATURATION GAIN CHANGING VIDEO SW ITCHING PIN CONNECTIONS DESCRIPTION This integrated circuit provides RGB switching allo­

2SC2641

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2641 U n i t in m m UHF BAND POWER A MPLIFIER APPLICATIONS. FEATURES : . Output Power : P 0=6W Min. ( f = 4 7 0 M H z , V CC=12.6V, Pi=lW) . 1 0 0 % T e s t e d fo r L o a d M i s m a t c h S t r e s s at A l l P h a s e

Contextual Info: 'lE f lb t iE 'ì 2 ^ E TTS'ìSDD • M F 1 0 3 7 S - 2 FOR PERSONAL HANDYPHONE SYSTEM DESCRIPTION FEATURES This SAW filter for the RF circuit of personal handyphone system. 1. SMD package insures small size, lightweight. 2. Adjustment free. 3. Low In s e rtio n lo s s and high s to p band

Contextual Info: HAY i 8 1992 CMOS/DMOS Quad Monolithic SPST Wide Band Analog Switches calodíc CORPORATION V CDG308/CDG309 FEATURES • • • • • DESCRIPTION Low Insertion L o s s .0.9 x DC @ 100MHz Low Channel-to-Channel C ro s s ta lk .-80dB

S-AV21H

Abstract: S-AV21L S-AU14 S-AV16H S-AV12 S-AU47 S-AU31A Amateur S-AU17A radio
Contextual Info: R F P o w e r A m p lifie r M o d u le s Type No. ^ Applicaiton Output Power P o W Frequency Range f (MHz) S-AV5 VHF 10W FM amateur radio 15 144-148 S-AV6 VHF 25W FM marina band 26 154-162 S-AV7 VHF 25W FM amateur radio 26 144-148 S-AV8 VHF10W FM/SSB amateur radio