S 8N Search Results

Contextual Info: SMD IN D U C T O R BEADS LCN1008T Series l PART NO. Inductance Test Freq. Q Test Freq. SRF Min. RDC ID C nH MHz Min. MHz MHz Max.fl! Max.mA LCN0805T-3N3P-S LCN0805T-6N8P-S LCN0805T-8N2D-S LCNI008T-IQND-S LCNI008T-I2NU-S LCNI008T-I5ND-S LCNI008T-I8ND-S LCNI008T-22ND-S

LS47

Contextual Info: ssaan IN IN C H E S . P Q N O T S C A L E P R IN T . 8 o»AA3> D IM E N S IO N S ^ X J S i / \ > - ro JL bo 2 u> / •Uv NJ S *h 698/S 698/S o e> U1 in u> 8N X MaawnN M ADE 00 / / / ¿'.S'. A & /Y C - T A 'C - O !iv " V <T> JL/ !» |! , 3 ” ^ _ T , . _^_u

Contextual Info: SKNa 47 Stud Diode Avalanche Diode SKNa 47 8NO2P:1 ?M2B@ R C7 $ N:&=1:5: %&'5+ I3/ 3(,1(5350 3.+/&,13(P D:&= 2:1( 8 [W77 S777 S^77 S677 SW77 SC77 ?M$8 R S6 $ N01(T UC7V >) R U7W XDP @FG& S¥][W @FG& S¥]S7 @FG& S¥]S^ @FG& S¥]S6 @FG& S¥]SW @FG& S¥]SC

501B

Abstract: 504B ED-13TV1 ED-15TV1 ED-15TV3 ED-16H1 ED-16N1 ED-22TV1
Contextual Info: ED-SH1 ED-8N1 ED-13TV1 ED-15TV1 ED-15TV3 ED-16H1 ED-16N1 ED-22TV1 ED-24R1 ED-75X1 ED-100X1 ED-125X1 ED—150X1 EDH36-1 EP01C ERA34-IQ ERB26-20 ESJA04—02 E S JA 04-03 E S JA 23-04 ESJA25-Q4 E S JA 25-06 E S JA 25-08 E S JA 25-10 ESJA 25—12 E S JA 2 5 -16

475 16k 105

Abstract: 501B 8 P ED-22TV1 501B 504B ED-13TV1 ED-15TV1 ED-15TV3 ED-16H1 ED-16N1
Contextual Info: ED-SH1 ED-8N1 ED-13TV1 ED-15TV1 ED-15TV3 ED-16H1 ED-16N1 ED-22TV1 ED-24R1 ED-75X1 ED-100X1 ED-125X1 ED—150X1 EDH36-1 EP01C ERA34-IQ ERB26-20 ESJA04—02 E S JA 04-03 E S JA 23-04 ESJA25-Q4 E S JA 25-06 E S JA 25-08 E S JA 25-10 ESJA 25—12 E S JA 2 5 -16

ED-16H1

Abstract: 501B 504B ED-13TV1 ED-15TV1 ED-15TV3 ED-16N1 ED-22TV1
Contextual Info: ED-SH1 ED-8N1 ED-13TV1 ED-15TV1 ED-15TV3 ED-16H1 ED-16N1 ED-22TV1 ED-24R1 ED-75X1 ED-100X1 ED-125X1 ED—150X1 EDH36-1 EP01C ERA34-IQ ERB26-20 ESJA04—02 E S JA 04-03 E S JA 23-04 ESJA25-Q4 E S JA 25-06 E S JA 25-08 E S JA 25-10 ESJA 25—12 E S JA 2 5 -16

ERB26-20

Abstract: ED-13TV1 ED-16N1 ESJA34-06 501B 504B ED-15TV1 ED-15TV3 ED-16H1 ED-22TV1
Contextual Info: ED-SH1 ED-8N1 ED-13TV1 ED-15TV1 ED-15TV3 ED-16H1 ED-16N1 ED-22TV1 ED-24R1 ED-75X1 ED-100X1 ED-125X1 ED—150X1 EDH36-1 EP01C ERA34-IQ ERB26-20 ESJA04—02 E S JA 04-03 E S JA 23-04 ESJA25-Q4 E S JA 25-06 E S JA 25-08 E S JA 25-10 ESJA 25—12 E S JA 2 5 -16

501B

Abstract: ERB26-20 504B ED-13TV1 ED-15TV1 ED-15TV3 ED-16H1 ED-16N1 ED-22TV1 ESJA53-16
Contextual Info: ED-SH1 ED-8N1 ED-13TV1 ED-15TV1 ED-15TV3 ED-16H1 ED-16N1 ED-22TV1 ED-24R1 ED-75X1 ED-100X1 ED-125X1 ED—150X1 EDH36-1 EP01C ERA34-IQ ERB26-20 ESJA04—02 E S JA 04-03 E S JA 23-04 ESJA25-Q4 E S JA 25-06 E S JA 25-08 E S JA 25-10 ESJA 25—12 E S JA 2 5 -16

ED-16N1

Abstract: 501B 504B ED-13TV1 ED-15TV1 ED-15TV3 ED-16H1 ED-22TV1 B 504D
Contextual Info: ED-SH1 ED-8N1 ED-13TV1 ED-15TV1 ED-15TV3 ED-16H1 ED-16N1 ED-22TV1 ED-24R1 ED-75X1 ED-100X1 ED-125X1 ED—150X1 EDH36-1 EP01C ERA34-IQ ERB26-20 ESJA04—02 E S JA 04-03 E S JA 23-04 ESJA25-Q4 E S JA 25-06 E S JA 25-08 E S JA 25-10 ESJA 25—12 E S JA 2 5 -16

ERB26-20

Abstract: 501B 504B ED-13TV1 ED-15TV1 ED-15TV3 ED-16H1 ED-16N1 ED-22TV1 ed15tv1
Contextual Info: ED-SH1 ED-8N1 ED-13TV1 ED-15TV1 ED-15TV3 ED-16H1 ED-16N1 ED-22TV1 ED-24R1 ED-75X1 ED-100X1 ED-125X1 ED—150X1 EDH36-1 EP01C ERA34-IQ ERB26-20 ESJA04—02 E S JA 04-03 E S JA 23-04 ESJA25-Q4 E S JA 25-06 E S JA 25-08 E S JA 25-10 ESJA 25—12 E S JA 2 5 -16

Contextual Info: S G S -1H 0M S 0N [MOigœilLiera *® STW8NA80 STH8NA80FI N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTORS PRELIMINARY DATA TYP E V STW 8NA80 S TH 8N A80FI dss 800 V 800 V R d S o ii < 1.50 a < 1.50 a Id 7.2 A 4.5 A • TYPICAL RDS(on) = 1.3 £1

0PIC

Abstract: LS66 SN74L30 84LS 64LS 84ls AX-2016 MAX2719 hy74 L8128A SN7463
Contextual Info: V 84 F A M IL Y S E R IE S 54 S E R IE S M L S S E R IE S B4S S E R IE S 74 S E R IE S 54H S E R IE S 74H S E R IE S 5 4 L 74 F A M IL Y S E R IE S 7 4 L S E R IE S 7 4 LS S E R IE S 74S *00. *04, *H 0 0 ,1404. *L00, 'U M , XSOO, *100, *S04, '10. *20, *30

RLD-78PIT

Contextual Info: Laser Diodes AIGaAs laser diodes RLD-78MIT/RLD-78PIT/RLD-78NIT The R L D -7 8 M IT , R L D -7 8 P IT and • E x te r n a l d im e n s io n s Unit: m m R LD -7 8N IT a re th e w o r ld 's firs t m assp ro d u c e d la s e r d io d e s th o s e a re (3)

XH414H IV01E

Abstract: XH414H XH414 E03A
Contextual Info: Ouerg. 8N 1. Okgf cn rd d CD ra i_ n -H CD m -W CD -H aj □□ ~a CD LH T o l e r a n c e s of l i n e a r d i me n s i o n s ira Dimension Tolerance - 3 3 - 6 6 - 3 0 ± 0. 20 ± 0. 20 ± 0 . 50 T o l e r a n c e s of a n g u l a r d i me n s i o n s ±

Contextual Info: SsL [ F S I L l M S i Final E le ctrica l S p e c ific a tio n s L i i LTC1688/LTC1689 m TECHNOLOGY 52Mbps/l 00Mbps RS485 Hot Swapable Quad Drivers March 1999 FEATURES DE9CRIPT10n • Ultrahigh Speed: 100Mbps ■ Guaranteed Propagation Delay: 8ns ±4ns Over Temperature

S66m

Contextual Info: CMOS NKK Low Voltage SRAM PlEUM M àlRY Fast Synchronous with Burst Counter N543532L 1M-BIT 32K X 32 _ _ -K. -N • Features • C M O S S R A M organized as 3 2 ,7 6 8 X 32bits • S in g le + 3 .3 V Pow er Supply • Fast C lo ck A ccess tim e : 8n s/66M H z, l0 n s/6 0 M H z , 12ns/50M H z

ttl 7478

Abstract: sn74ls75 SN54LS375
Contextual Info: TTL TYPES SN54LS375, SN74LS375 4-BIT BISTABLE LATCHES MSI BU LLETIN NO. DL-S 7 6 1 2 1 3 1 , OCTOBER 1 9 7 6 • Supply Voltage and Ground on Comer Pirn To Simplify P-C Board Layout logic 8N 6 4 L 8 3 7 S . . . J OR W PACKAGE S N 7 4L S 376. . . J OR N PACKAGE

16N250

Contextual Info: DENSE-PAC MICROSYSTEMS SñE D • 275^415 DODIOS'I 1 ^ D P C DPHDAM8N and DPHDAM16N D ense-Pac M i c r q s y s t e m s jn c ^ _ High Speed Pata Acquisition Module PRELIMINARY 7rS‘/'07-OI DESCRIPTION The D P H D A M 8N and D P H D A M 16N , high speed data

MAX901

Abstract: max903 MAX900ACWP MAX903CPA MAX900 MAX900ACPP MAX900BCPP MAX900BCWP MAX902 MAX900A
Contextual Info: 19-2887; Rev. 3; 11/92 H ig h -S p e ed , L o w -P o w e r V o lta g e C o m p a ra to rs _ F e a tu re s ♦ 8ns Typ Propagation Delay A ll c o m p a ra to rs ca n b e p o w e re d fro m s e p a ra te a n a lo g a n d d ig ita l p o w e r s u p p lie s or fro m a s in g le

Contextual Info: JSJX. REVISIONS ¥ I S T A M ¿’¿’O S ^ l- S P S-D / £ F -2 Æ /. jPO/f 2 j^ O /f ^ iû / ? 7 - A/OTÆ5- S . i /3 w/r/-/ ¿W àSCÆ 4 - S=~C>^ C M Æ ï/S S G V S Æ £ > /Æ ¿ / t t S T K /-& 7 / ¿ C r G S /Z Æ /A J S T /? & < ? T /0 /^ S £. Sa ^ æ ¿S

NF D 21-511

Abstract: 30f 4011 LM5020 LM5068 LM5070 TSSOP-16 HM Device Korea
Contextual Info: £\X\21 S ? W EBENCH webench.national.com ^ ÿ c1 *K l t3 *K I Cl^l-ol ? > T ä * } ji S S E E -^ t ^ o ] E ä ^ l i t ul ¿ r S j- t < r S lH ^ - 2. 4 . ^ Î 5 « > S . 3 . ^ S S S E ) - ^ 71S * ' S ^ r } ‘Ê M H H ^ - g - ^ t f l il- A l? l7 l^ S |

Contextual Info: S G S - T H O M S O N ¿ 5 ¡U È T O « 7 S T D 8 N 06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V STD 8N 06 dss 60 V R DS on Id < 0.2 5 C l 8 A . . • . . . ■ . TYPICAL R DS(on) = 0.21 Q. AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

ch07

Abstract: ch0j 54HCT241 54LS S4HCT574
Contextual Info: DENSE-PAC MICROSYSTEMS SñE D • 275^415 DODIOS'I 1 ^ D P C DPHDAM8N and DPHDAM16N D ense-Pac M i c r q s y s t e m s jn c ^ _ High Speed Pata Acquisition Module PRELIMINARY 7rS‘/'07-OI DESCRIPTION The D P H D A M 8N and D P H D A M 16N , high speed data

jx 903

Abstract: MAX900ACWP MAX900A
Contextual Info: 19-2887; Rev. 3; 11/92 > i / i y i x i > i / i High-Speed, Low-Power Voltage Comparators _Features ♦ 8ns T yp Propagation Delay A ll c o m p a r a to r s c a n b e p o w e re d fro m s e p a ra te a n a lo g a n d d ig ita l p o w e r s u p p lie s or fro m a s in g le