S 76 INFRARED Search Results

BPW77B

Abstract: BPW77A BPW77 bpw 50 bpw 41 Telefunken Electronic BPW76A u 110 telefunken BPW 64 bpw 75
Contextual Info: TELEFUNKEN ELECTRONIC i 17E D • OOOfiMbM S BPW 76 • BPW 77 ‘DTiSOJUFtlij&aCSI&fl electronic Cr*atN*f*chnûJoçj*s Silicon NPN Epitaxial Planar Phototransistors Applications! Detector in electronic control and drive circuits Features: • Hermetically sealed case

Contextual Info: Six-Input Channel Analog Front End AD73360L a FEATURES Six 16-Bit A/D Converters Programmable Input Sample Rate Simultaneous Sampling 76 dB SNR 64 kS/s Maximum Sample Rate –95 dB Crosstalk Low Group Delay 25 ␮s Typ per ADC Channel Programmable Input Gain

AD73360L

Abstract: AD73360LAR ADSP-2181
Contextual Info: a Six-Input Channel Analog Front End AD73360L FEATURES Six 16-Bit A/D Converters Programmable Input Sample Rate Simultaneous Sampling 76 dB SNR 64 kS/s Maximum Sample Rate –95 dB Crosstalk Low Group Delay 25 ␮s Typ per ADC Channel Programmable Input Gain

HM76-40220J

Abstract: HM76-40150J
Contextual Info: MODEL H M 76 SERIES N EW PRODUCT Drum C o re , S p a ce Efficient High P erfo rm an ce S u rfa ce M ount Inductors Inductance Range: 1 to 1,000pH Rated Current: Up to 15 Amps FEATURES High performance, high current capacities - Meets today’s circuit demands for com pact size and current requirements

TFK BPW 75

Abstract: TFK 940 TFK 19 001 tfk bpw 77 tfk BPX 28 diode s .* tfk cqy 35 n TFK bpw BPW19 MB28C
Contextual Info: CQY 39 Zehnteilige Galliumarsenid-Lumineszenzdiodenzeile 10 Element GaAs Infrared Emitting Diodes Array Anwendung: Strahlungsquelle im nahen Infrarot-B ereich für Lochstreifenleser Application: Radiation source in near infrared range for tape readers Besondere Merkmale:

Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Infrared Remote-control Receiver Module IRM-H2xxT/TR2 SERIES Features High shielding against electric field disturbance. Low voltage and low power consumption. Very small sizes. External dimensions 5.10 L *4.60(W)*1.45(H)mm.

Contextual Info: so OPTOELECTRONICS HERMETIC INFRARED LIGHT EMITTING DIODES p , fc m ts s m r M etai C a n C o n ve x Le n s P .» * ; N u m b i.r A : i 4i I I: '•'V if □ u i« s u t P ’ ^2 P o w i ï i .Titr, m ;¡* 'J 1 i rrt A ¡ UHU'!:. ’ íl ¡i * !q V R ■1.1 A ¡ / ¡ V >

Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only Features * Meet ROHS, Green Product. * Dual color chip LED. * Ultra bright InGaN Chip LED. * Package in 8mm tape on 7" diameter reels. * Compatible with automatic placement equipment. * Compatible with infrared and vapor phase reflow solder process.

Contextual Info: @ OPTEK Product Bulletin OPC216 June 1993 GaAIAs Infrared Emitter Chip Type OPC216 Features Absolute Maximum Ratings *1*(Ta = 25°C unless otherwise noted • High infrared radiation output • Low degradation • Microalloyed gold contacts Storage and Operating Temperature. -55°C to +150°C

tfk 731

Abstract: TFK BPW 41 N 74140 CQY 38 CQY 66 Fotodiode TFK 925 diode tfk diode s .* tfk Scans-0010327
Contextual Info: CQY 38 H 'W GaUliumarsenid-Lumineszenzdiode GaAs Infrared Emitting Diode Anwendung: Strahlungsquelle im nahen Infrarot-Bereich Application: Radiation source in near infrared range Besondere Merkmale: Features: • Metallsockel mit Kunststofflinse • Metal base with plastic lens

49 mhz remote control transmitter circuit

Abstract: uhf TRANSMITTER CIRCUIT DIAGRAM 27 40 49 mhz remote control transmitter circuit RF remote control circuit diagram am receiver circuit diagram and c remote control transmitter and receiver circuit f ASK receiver CIRCUIT DIAGRAM
Contextual Info: Tem ic S e m i c o n d u c t o r s Rem ote Control Table of Contents R em ote C ontrol . 19 Comparison Infrared versus RF S y s te m s.

AN890

Abstract: OP266W OP506W
Contextual Info: 0 . OPTEK Product Bulletin O P266W Jun e 1996 GaAlAs Plastic Infrared Emitting Diode Type OP266W Features • Wide irradiance pattern • Mechanically and spectrally matched to the OP 5O6W • Small package size for space limited applications • T-1 package style

Contextual Info: AN5026K AN5026K •Ji —h ■« JUSSfSffl HIft/R e c e iv e r for Infrared Remote Control Circuit 9 Unit : mm AN5026KÜ, □ -> v v X f Aco-g{§"7°' 7 iJ )S T > 7 " , WS&, ■ 4# rn ij ~ -y ? T > - 7 \ BPF b t* « ? iiT u i f o « • '< > p A ^ 7 -f M -ftffiK i: i 0 |b]H ! r])(£&■£■ 30—60kHz i T ^ * )

Contextual Info: AN5025K AN5025K •Ji— h n > h n — JU58 Bffl HISS/Receiver for Infrared Remote Control Circuit ■ ffi 9 AN5025K(±, m • i - [-n-il-yX fA nfeyiJ 7 t t e r > 7 ", u i ' y ? 7 > 7 " , b at & -f ' < > (n -W liiit: i ' |B]iiia&-*5c£ 3 0 - 6 0 kHzi • ,‘il

P8105

Contextual Info: SDP8105 Silicon Photodarlington FEATU RES • T-1 plastic package • 20° nominal acceptance angle • C onsistent optical properties • M echanically and spectrally m atched to SEP 8 5 0 5 /8 5 2 5 and S E P 8 7 0 5 infrared emitting diodes i D E S C R IP T IO N

siemens SFH nm

Abstract: sfh418 SFH414
Contextual Info: SIEMENS C M P N T S t OPTO 44E D ASBbBEb OODSMfib 5 SIEMENS ISIEX S FH 414 S FH 415 S FH 416 GaAs Infrared Emitter ' - H l - II Package Dimensions in Inches mrh SFH 414/415 CWp Petition ,016(0.4) ( .1*9(4*) .165 (4¿) _ l ra i (M ) .016(0.4)-} .100 <2*54>

Diode FAJ 45

Abstract: Diode FAJ package
Contextual Info: 1 * GaAs INFRARED EMITTING DIODE IFTIELECTlllltS CQX14, CQX16 The CQX14/16 are 940nm LHDs in narrow angle, TQ-46 packages. SÊAHNÛ ST1332 N Good optica! to mechanical alignment SYMBOL INCHES MiN ' MAX. A 0b «>0 «•0, e * h i k L « .01« 209 255 .021 .230

G3VM-351H

Abstract: IR LED infrared led G3VM-S3
Contextual Info: MOS FET Relays G3VM-351H Slim, 2.1-mm High Relay Incorporating a MOS FET Optically Coupled with an Infrared LED in a Miniature, Flat SOP Package • Upgraded G3VM-S3 Series. • Continuous load current of 110 mA. • Dielectric strength of 1,500 Vrms between I/O.

panasonic pip

Abstract: AN5025K integrated circuit pin layout block diagram of tv remote control Panasonic TV remote
Contextual Info: Panasonic ICs for TV AN5025K Remote Control Receiving 1C • Overview The AN5025K is an integrated circuit for the receiving preamplifier of the infrared remote control system, and consists of the first amplifier, limiter amplifier, BPF, signal waveform detector, and waveform shaping circuit.

Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS CQX14, CQX16 DESCRIPTION The CQX14/16 are 940nm LEDs in narrow angle, TO-46 packages. SEATING /fth X. FEATURES ST1332 Good optical to mechanical alignment SYMBOL INCHES MIN. A MILUMETERS MAX. MIN. NOTES Mechanically and wavelength matched to TO-18

TLP647J

Abstract: TLP647
Contextual Info: GaAs IRED a PHOTO-THYRISTOR TLP647J T LP 6 47 J OFFICE M A C H IN E . H O U S E H O LD USE E Q U IP M E N T . S O LID STATE R ELAY . S W IT C H IN G P O W ER SUPPLY. The TOSHIBA TLP647J consists of a photo-thyristor optically coupled to a gallium arsenide infrared em itting diode in a six lead

Contextual Info: Technical Data Sheet Opto Interrupter ITR20002-A Features Fast response time High analytic High sensitivity Cut-off visible wavelength P=940nm Pb free This product itself will remain within RoHS compliant version. Descriptions The ITR20002-A consist of an infrared emitting diode and an NPN silicon phototransistor,

MLED91

Abstract: a468a MRD901
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MLED91 Series Advance Information Infrared 940 nm LED The MLED91 series 940 nm LEDs are multi-purpose devices capable for use in numerous applications. These Gallium Arsenide devices are m anufactured to tight tolerances for maximum perform ance and long lifetime. The devices can be

P3257-01

Contextual Info: INFRARED DETECTOR MCT photoconductive detector P3257 series, P4249-08 10 µm band infrared detector with high sensitivity and high-speed response Features Applications l High-speed response, high sensitivity in the 10 µm band detection l Photoconductive element that decreases its resistance