RUGGEDIZED Search Results

Contextual Info: SBP 9961 INTERRUPT CONTROLLER 1.0 INTRODUCTION 1.1 G E N E R A L D E SC R IP T IO N SBP 9961 T h e S B P 9961 C o n tro lle r is a ruggedized, m on olithic, program m able, m u ltifu n ction system support device fabricated w ith oxide separated Integrated In jection Lo gic l2 L technology. T h e S B P 9961 provides the S B P 9 9 0 0 series Fa m ily

SBP 9900

Abstract: SBP9989
Contextual Info: SBP 9960 SBP9960 PR O G R A M M A B LE CRU I/O EXPANDER 1.0 INTRODUCTION 1.1 GENERAL DESCRIPTION The SBP 9960 Programmable CRU I/O Expander is a ruggedized m onolithic software-configurable input/output device fabricated w ith oxide separated Integrated Injection Logic |2 l technology. The

DMU-30DCV

Abstract: 999VDC TB1 160
Contextual Info: DMU-30DCV Series www.murata-ps.com Ruggedized DC Voltmeters with Daylight Readable Auto-Dimming LED Displays FEATURES • Measure and accurately display dc voltages in harsh environments ■ Four input ranges: ±200mVdc, ±2Vdc, ±20Vdc, and ±200Vdc ■ Daylight-readable LED display with automatic

Contextual Info: HV04H HV06H tn C . 64-Channel Serial To Parallel Converter With Ruggedized High Voltage CMOS Outputs Ordering Information Package Options Device Recommended Operating Vpp Max 80-Lead Quad Cerpak Guliwing 80-Lead Quad Plastic Guliwing 60V HV04H06DG 80V HV04H08DG

Delay Lines

Abstract: shuttle
Contextual Info: Technitrol Surface-Mount Delay Lines IÇ* 's Technitrol has responded to the rapidly growing applications for surface-mount delay lines, particularly in military and ruggedized applica­ tions, with the broadest high-reliability line in the industry. We're confi­

kyx 28

Abstract: 74148 9900A 9900 Panel SBP9900A-1 DEC memory catalogue IC2 Bus Addresses 007C ic 74148 INJECTOR
Contextual Info: SBP 9900A-1 1. INTRODUCTION 1.1 D E S C R IP T IO N Th e SBP 9 9 0 0 A microprocessor is a ruggedized m ono lith ic C entral Processing U n it <CPU fabricated w ith Integrated In jection Logic |2|_ ) technology. Th e SBP 9 9 0 0 A combines th e properties o f l 2 L technology w ith a 16-b it word

dc 20v motor matsua

Abstract: mosfet Gate Drive dc 20v motor matsushita AN8175 panasonic igbt and power mosfet driver
Contextual Info: Panasonic Power MOS-FET Gate Drive 1C AN8175/S Overview The AN8175/S is a high voltage,high speed power MOS-FET and IGBT driver with both high side and low side referenced output channels. Proprietary HYIC and latch immune CMOS technologies enable ruggedized

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF9640 Power MOSFET 11 Amps, 200 Volts P-CHANNEL POWER MOSFET „ DESCRIPTION The UF9640 is a P-channel Power MOSFET that developed by UTC’s advanced technlogy. The device has an advantage of including fast switching, low on-resistance, ruggedized device design

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF9640 Preliminary Power MOSFET 11 Amps, 200 Volts P-CHANNEL POWER MOSFET  DESCRIPTION The UF9640 is a P-channel Power MOSFET that developed by UTC’s advanced technlogy. The device hasan advantage of include fast switching, low on-resistance, ruggedized device design and low

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF9640 Power MOSFET 11 Amps, 200 Volts P-CHANNEL POWER MOSFET „ DESCRIPTION The UF9640 is a P-channel Power MOSFET that developed by UTC’s advanced technlogy. The device hasan advantage of include fast switching, low on-resistance, ruggedized device design and low

Contextual Info: SSG9980 4.6A, 80V,RDS ON 52mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.19 0.25 0.40 0.90 45 The SSG9980 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Contextual Info: Ruggedized Zone Enclosure, Preterminated, ALTOS Cable 48 F, 4x12 OptiTip Adapters, Pulling Grip, MM OM3 , 500 ft 223.0125 Corning Cable Systems AnyLAN Ruggedized Zone Enclosure combines the AnyLAN OptiTip™ adapter with a sealed closure for quick and easy deployment, eliminating the need for field-terminated fiber optic cables. The

Contextual Info: SSG4953 -5A, -30V,RDS ON 53mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.19 0.25 0.40 0.90 The SSG4953 provide the designer with the best Combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness.

Contextual Info: EMC/EMI Chokes RB series Current-compensated Chokes Rated currents from 16 to 50A Up to 600VAC or 1000VDC Approvals 2- and 3-wire configurations Horizontal and vertical PCB mounting types Ruggedized saturation and thermal behavior Open construction for forced and

Contextual Info: SSD12P10 -12A , -100V , RDS ON 210mΩ P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD12P10 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT9564 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET „ 1 DESCRIPTION TO-252 The UTC UT9564 is a P-ch enhancement mode power MOSFET and it uses UTC perfect technology to provide customers with fast switching, ruggedized device design, low on-resistance and

cold cathode

Abstract: rs tube
Contextual Info: RAYTHEON TECHNICAL INFORMATION COLD CATHODE GAS - DIODE TYPE S-jX—C- eJ -L .e—n—c s - CK6763 The CK6763 is a ruggedized, instant starting, cold cathode, g a s-fille d , half-wave rectifier of m in­ iature construction suitable for high voltage, low current power supplies up to 12 mAdc output.

RK 100

Abstract: ELECTRON tube 5639 5639 tube CG24 RK100 subminiature tubes radar tube BACR
Contextual Info: 5639 PREM IUM TUBE TUMO-SOL PENTODE SUBMINIATURE TYPE . 400" COATED UN IPOTENTIAL CATHODE MAX. HEATER 6.3 VOLTS 0.45 AMP. AC OR DC T- 3 MAX. ANY MOUNTING POSITION BOTTOM VIEW SU BM INIATURE BUTTON 8 FLEXIBLE LEADS l i MIN. . . ! . GLASS BULB THE 5639 IS A RUGGEDIZED PENTODE IN THE 8 LEAD BUTTON SUBMINIATURE CON­

magnetron modulator design

Abstract: ML8464 magnetron ns radar magnetron 60 kw ML-8464 ML 1100 dc power radar tube magnetron 65 kw machlett triode
Contextual Info: ISSUED 5-64 m vi Ruggedized Shielded Grid Triode Pulse Power to 5 0 0 kw ELEC TR O N TU B E S P E C IA L IS T DESCRIPTION T he M L -8464 is a shielded-grid triode design ed prim arily to operate as a sw itch tube in hard-tube p u lse m odulators for radar and similar applications. In this service it can deliver

Contextual Info: S1C1 Pin Diode Switch Single Pole, Single Throw Absorptive Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5 V and -15 V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. •

Contextual Info: S1K2 Pin Diode Switch Single Pole, Single Throw Absorptive Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5 V and -15 V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. •

s3v5

Contextual Info: S3V5 Pin Diode Switch Single Pole, Three Throw Absorptive Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5 V and -15 V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. •

Contextual Info: S1X3R Pin Diode Switch Single Pole, Single Throw Reflective Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5 V and -15 V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. •

Contextual Info: S2U6 Pin Diode Switch Single Pole, Two Throw Absorptive Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5 V and -15 V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. • RoHS-compliant versions available.