RSX10 Search Results

Contextual Info: Data Sheet AEC-Q101 Qualified Schottky barrier Diode RSX101VA-30FH Applications General rectification Land size figure Unit : mm Dimensions (Unit : mm) 1.1 0.17±0.1 0.05 1.9±0.1 3) High reliability. 2.5±0.2 Features 1) Small mold type. (TUMD2)

IVT2200A

Abstract: 192MHZ
Contextual Info: Page 1 of 6 IT2200A Overview Low cost SMD TCXO with voltage control option using an analogue IC for compensation. Frequencies ranging from 10 MHz to 52 MHz. Description The I V T2200A employs an analogue IC for the oscillator and temperature compensation. 2.5mm x 2.0mm in size. the RSX10 crystal is surface mounted on top of the ceramic IC carrier. The segregation of the crystal from the oscillator further

Contextual Info: Data Sheet Schottky Barrier Diode RSX101M-30 Applications General rectification Dimensions Unit : mm Land size figure (Unit : mm) Features 1)Small power mold type. (PMDU) 2)Low VF, Low IR 3)High reliability PMDU Construction Silicon epitaxial

RSX101VA-30

Contextual Info: Data Sheet Schottky barrier Diode RSX101VA-30 Applications General rectification Dimensions Unit : mm Land size figure (Unit : mm) Features 1) Small mold type. (TUMD2) 2) Low VF 3) High reliability. TUMD2 Construction Silicon epitaxial planar

RSX101VA-30

Contextual Info: RSX101VA-30 Diodes Shottky barrier diode RSX101VA-30 zExternal dimensions Unit : mm ROHM : EIAJ : − JEDEC : zStructure Silicon Epitaxial Planer 1.45±0.1 0.17±0.1 0.05 0.4±0.1 R zFeatures 1) Small power mold type. (TUMD2 (1913) ) 2) High reliability.

RSX101VA30

Abstract: RSX101VA-30 TUMD2
Contextual Info: RSX101VA-30 Diodes Shottky barrier diode RSX101VA-30 zExternal dimensions Unit : mm ROHM : EIAJ : − JEDEC : zStructure Silicon Epitaxial Planer 1.45±0.1 0.17±0.1 0.05 0.6±0.2 0.1 1.3±0.1 0.4±0.1 R zFeatures 1) Small power mold type. (TUMD2 (1913) )

RSX1001T3

Contextual Info: RSX1001T3 Diodes Schottky barrier diode RSX1001T3 zDimensions Unit : mm zApplications Switching power supply zStructure 㪋㪅㪌㫧㪇㪅㪊 䇭䇭䇭㩷㪇㪅㪈 㪉㪅㪏㫧㪇㪅㪉 䇭䇭䇭㩷㪇㪅㪈 㪈㪊㪅㪌㪤㪠㪥 㪈㪅㪉 zConstruction

201E

Abstract: 275E RSX1001T3
Contextual Info: REFERENCE 14-Sep-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RSX1001T3 No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current

RSX101VA-30

Contextual Info: RSX101VA-30 Diodes Shottky barrier diode RSX101VA-30 zExternal dimensions Unit : mm ROHM : EIAJ : − JEDEC : zStructure Silicon Epitaxial Planer 1.45±0.1 0.17±0.1 0.05 0.4±0.1 R zFeatures 1) Small power mold type. (TUMD2 (1913) ) 2) High reliability.

ESD protection

Abstract: RSX101M RSX071VA-30
Contextual Info: Schottky Barrier Diodes RSX-series in red: improved spec Low VF R, and High ESD Protection SBD PKG IO Model (Size) VR TUMD2 500mA RSX051VA-30 VF (Typ.) min / max 0.39V 30V (1913) (1913) (0.38V) TUMD2 RSX101VA-30 30V 10kV low VF, low IR, and high g ESD protection

RSX101M-30

Contextual Info: Low VF / Low IR / High ESD Protection Next-generation Schottky Barrier Diodes RSX* series 35% size reduction VR-I VF 50% Improvement in IR 1000 RSX101M-30 RB491D 100 (ROHM’s existing part) IR(µA) IF(mA) 100 VF (ROHM’ RSX101M-30 10 10 1 0.0 1 0.1 0.2

Schottky Diode 30V 1A SOD

Abstract: RSX101M-30
Contextual Info: RSX101M-30 Diodes Schottky barrier diode RSX101M-30 z Land size figure Unit : mm z External dimensions (Unit : mm) zApplications General rectification 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3.5±0.2 3.05 zFeatures 1) Small power mold type. (PMDU)

RSX100

Abstract: RSX1001T3
Contextual Info: Schottky barrier diode RSX1001T3 Applications Switching power supply Dimensions Unit : mm Structure Features 1) Cathode common type. (TO-220) 2) Low IR (1) (2) (3) 3) High reliability Construction Silicon epitaxial planer Absolute maximum ratings (Ta=25°C)

Contextual Info: Schottky Barrier Diode Data Sheet RSX101MM-30 lApplication lDimensions Unit : mm General rectification lLand Size Figure (Unit : mm) 0.1±0.1 0.05 1.2 lFeatures 1) Small power mold type 3.05 3.5±0.2 0.12 2.6±0.1 0.85 1.6±0.1 PMDU (PMDU) 2) High reliability

Contextual Info: Data Sheet Schottky Barrier Diode RSX101M-30 Applications General rectification Dimensions Unit : mm Land size figure (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3)High reliability 3.5±0.2 3.05 Features 1)Small power mold type. (PMDU)

RSX1001T3

Contextual Info: RSX1001T3 Diodes Schottky barrier diode RSX1001T3 zDimensions Unit : mm zApplications Switching power supply zStructure 4.5±0.3 0.1 2.8±0.2 0.1 15.0±0.4 0.2 13.5MIN 1.2 zConstruction Silicon epitaxial planar 8.0±0.2 12.0±0.2

047e

Abstract: RSX101M-30
Contextual Info: REFERENCE 7-Sep-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RSX101M-30 No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current

Schottky Diode 30V 1A SOD

Abstract: RSX101M-30
Contextual Info: RSX101M-30 Diodes Schottky barrier diode RSX101M-30 z Land size figure Unit : mm z Dimensions (Unit : mm) zApplications General rectification 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3.5±0.2 3.05 zFeatures 1) Small power mold type. (PMDU)

tic 1060

Abstract: RSX1001T3 TA 1504 TA150DC
Contextual Info: RSX1001T3 Diodes Schottky barrier diode RSX1001T3 zExternal dimensions Unit : mm zApplications Switching power supply zStructure 4.5±0.3 0.1 2.8±0.2 0.1 15.0±0.4 0.2 13.5MIN 1.2 zConstruction Silicon epitaxial planar 8.0±0.2 12.0±0.2

RSX101M-30

Contextual Info: RSX101M-30 Diodes Schottky barrier diode RSX101M-30 z Land size figure Unit : mm z Dimensions (Unit : mm) zApplications General rectification 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3.5±0.2 3.05 zFeatures 1) Small power mold type. (PMDU)

RSX101M-30

Contextual Info: RSX101M-30 Diodes Shottky barrier diode RSX101M-30 zExternal dimensions Unit : mm zApplication High efficient shottky barrier diode Rectifier for power supply units Battery protection against reversal current CATHODE MARK 0.1±0.1 0.05 1.6±0.2 ROHM : PMDU

RSX101VA-30

Contextual Info: RSX101VA-30 Diodes Shottky barrier diode RSX101VA-30 zExternal dimensions Unit : mm ROHM : EIAJ : − JEDEC : zStructure Silicon Epitaxial Planer 1.45±0.1 0.17±0.1 0.05 0.6±0.2 0.1 1.3±0.1 0.4±0.1 R zFeatures 1) Small power mold type. (TUMD2 (1913) )

Contextual Info: RSX101M-30 Diodes Shottky barrier diode RSX101M-30 zExternal dimensions Unit : mm zApplication High efficient shottky barrier diode Rectifier for power supply units Battery protection against reversal current CATHODE MARK 0.1±0.1 0.05 1.6±0.2 ROHM : PMDU

Contextual Info: RSX101VA-30 Diodes Schottky barrier diode RSX101VA-30 z Land size figure Unit : mm z External dimensions (Unit : mm) zApplications General rectification 0.17±0.1 0.05 1.1 1.3±0.05 1.9±0.1 2.5±0.2 zFeatures 1) Small mold type. (TUMD2) 2) Low VF