RRMM Search Results

zfha

Abstract: GI 312 AN8083S
Contextual Info: — 312 — AN8083S fâT W ? D C -D C =i w m m m x -, m m itm t'E v D c - D c & < . A t J m Œ t 1 . 2 V * ' % K i f f - f 3•X x ? ~ y ^ 4 <Sf<rrmmw.m^'M M b u e t » T a= 2 5 V Vcc 14.4V (V'cc, P V c c S i ) P d 380m W T0pi - 2 0 ,C ~ -+ 7 5 t Tsig - 5 5 " C ~ + 1 2 0 r

Yx46

Contextual Info: SELECTION GUIDE y V. 500 600 FAST RECTIFIER DIODES Ultra fast epitaxial types (25 to 100 ns) 'F(A V )m ax (A) Outline Page v RRMmax <v > 50 100 150 200 300 400 700 800 1000 vW vl ww 100 D T 1ZOU r IV O U r ^ / b BYV54V* SOT-227B - - 403 ’ Dual rectifier diodes.

Contextual Info: rrmm _LT1026 Voltage Converter TECHNOLOGY F€ATUR€S DCSCRIPTIOA • Generates + and - from Single Input ■ Up to ± 18V Output ■ Only Needs Four 1pF Capacitors ■ No Inductors ■ 10mA Output Current Min ■ Operates Down to 4V ■ No Latch Up

Contextual Info: IBM11N16735B IBM11N16645B IBM11N16735C IBM11N16645C 16M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 16Mx64.16Mx72 Extended Data Out Page Mode DÎMMs • Performance: -60 Wc [RAS Access Time tCAC

E 62320

Abstract: 100JB-L IRF 725 100JB 26MB-A 36MB-A 250JB-L
Contextual Info: Bulletin I2715 rev. E 08/97 MB & JB SERIES SINGLE PHASE BRIDGE Power Modules Features 10 A 25 A 35 A Universal, 3 way terminals: push-on, wrap around or solder High thermal conductivity package, electrically insulated case Center hole fixing Excellent power/volume ratio

op220 "direct replacement"

Abstract: LT1034 op220 AD707 LT1001 LT1012 LT1077 OP-07 OP-77
Contextual Info: r r TECHNOLOGY u r m _LT1Q77 Micropower, Single Supply, Precision Op Amp F€ATUA€S DCSCRIPTiOn • 60/iA Max Supply Current ■ 40/tV Max Offset Voltage ■ 350pA Max Offset Current ■ 0.5fiVp-p 0.1 Hz to 10Hz Voltage Noise ■ 2.5pAp-p 0.1 Hz to 10Hz Current Noise

LT1039N16

Abstract: max232 rs232 to ttl LT10393 LTC1045 MC145406 300G LT1030 LT1032 cmos series LT1080
Contextual Info: n i 11*2 a . n i ài w r r E F i r r Ï- L 7EC » 3 f M 1 -J Ir DESIGN NOTES November, 1987 Number 4 in a series from Linear Technology Corporation New Developments in RS232 Interfaces Robert Dobkin New RS232 interface chips have been developed that offer

Contextual Info: IBM13M16734BCB Preliminary 16M x 72 1-Bank Registered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 16Mx72 Synchronous DRAM DIMM -75A R e g . j Units | 4 DIMM CAS Latency • • • • • • • fcK I Clock Frequency

Contextual Info: Bulletin 12084 rev. B 08/94 International lö R Rectifier SD400C.C STANDARD RECOVERY DIODES s e r ie s Hockey Puk Version Features • W ide current range ■ High voltage ratings up to 2400V ■ High surge current ca p abilities ■ D ittused junction ■

Contextual Info: Bulletin I20206 10/96 International IÖ R Rectifier 6F R SERIES STANDARD RECOVERY DIODES Stud Version Features 6A • High surge current capability ■ Avalanche types available ■ Stud cathode and stud anode version ■ Wide current range ■ Types up to 1200V VRRM

Contextual Info: IBM13M32734BCB Preliminary 32M x 72 2-Bank Registered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 32Mx72 Synchronous DRAM DIMM -75A Reg DIMM CAS Latency • • • • • • j Units | 4 f X Clock Frequency 133 t;<

Contextual Info: Bulletin 127107 rev. A 09/97 International T.HFL SERIES IQ R Rectifier FAST RECOVERY DIODES T-Modules Features • 40 A 70 A 85 A Fast recovery lim e ch a ra cte ristics ■ E lectrically isolated base plate ■ 3500 VD. . „ isolating voltage ■ Standard JED EC package

irfc 30

Contextual Info: Bulletin 127094 rev. A 09/97 International M R Rectifier irk .l2 4 0 s e r ie s FAST RECOVERY DIODES MAGN-A-pak Power Modules Features • Fast recovery tim e ch a ra cte ristics 250A ■ E le ctrica lly isolated base plate ■ Industrial standard package

D0-203AB

Abstract: d-u203 70HRR
Contextual Info: Bulletin 120202 10/96 International IO R Rectifier 70HF R s e r ie s STANDARD RECOVERY DIODES Stud Version Features • 70 A High surge current capability ■ Designed lor a wide range of applications ■ Stud cathode and stud anode version ■ Leaded version available

Contextual Info: Bulletin 12031/B International I I]Rectifier 70/300U R .D SERIES STANDARD RECOVERY DIODES Stud Version Features D iffu sed d io d e W id e c u rre n t ra n g e High v o lta g e ra tin g s up to 1 6 0 0 V H igh s u rg e c u rre n t c a p a b ilitie s S tu d c a th o d e and stud a n o d e ve rs io n

Contextual Info: Bulletin 12088/A International SRectifier sd 2oooc.l s e rie s STANDARD RECOVERY DIODES Hockey Puk Version Features 2100A • Wide current range ■ High voltage ratings up to 1000V ■ High surge current capabilities ■ Diffused junction ■ Hockey Puk version

Contextual Info: Bulletin 12033/A International H Rectifier sd 4000c .r s e rie s STANDARD RECOVERY DIODES Hockey Puk Version Features 4450A • W id e cu rren t range ■ High voltag e ratings up to 4 0 0 0 V ■ High surge cu rren t capab ilities ■ Diffused junction ■

Contextual Info: Bulletin 125160/B International Rectifier ST280CH.C SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features • 500A C en ter am plifying gate ■ M e tal case with ceram ic insulator ■ International standard ca se T O -2 0 0 A B A -P U K ■ E xtended te m p erature range

Contextual Info: M O S E L V IT E L IC V53C16258H H IG H P ER FO R M A NC E 25 6K X 16 ED O P A G E M O D E CM O S DYNAM IC R A M OPTIONAL S E L F R EFR ESH HIGH PERFORMANCE P R ELIM INA R Y 25 27 30 35 40 Max. RAS Access Tim e, tRAC 25 ns 27 ns 30 ns 35 ns 40 ns Max. Column Address Access Time, (tCAA)

Contextual Info: Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYW96 series FEATURES DESCRIPTION • Glass passivated Rugged glass SOD64 package, using a high temperature alloyed • High maximum operating temperature construction. This package is

Contextual Info: Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifier BYV4100 FEATURES DESCRIPTION • Glass passivated Rugged glass SOD64 package, using a high temperature alloyed construction. • High maximum operating temperature

Contextual Info: N AUER PHILIPS/DISCRETE b^E 1> • bbSB'iai 002bbSl 212 B A P X _ J ^ BYV27 SERIES EPITAXIAL AVALANCHE DIODES Glass passivated epitaxial rectifier diodes in hermetically sealed axial-leaded glass envelopes. They feature low forward voltage drop, very fast recovery, very low stored charge, non-snap-off switching

1N4933

Abstract: in4933 diode 1N4937 IN4933
Contextual Info: 1N4933 to 1N4937 JV FAST SOFT-RECOVERY RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded ID * envelopes. They are intended fo r television and industrial applications, such as switched-mode power supplies, scan rectifiers in T V

BYV26

Abstract: BYV26A BYV26B BYV26C BYV26D BYV26E BYV26F BYV26G diode BYV26E
Contextual Info: N AUER P H I L I P S / D I S C R E T E bbsa^ai b' i E D027D2b Philips Semiconductors • N o n -sn a p -o ff soft- recovery sw itch in g ch a racteristics • C a p a bility of absorb in g reverse tra n sie n t energy. BYV26 series Q U IC K R E FE R E N C E DATA