RONICS TECHNOLOGY Search Results

Ronics Technology

Abstract: hs60 HS40 RTP-058F-03 touch less
Contextual Info: TOUCH SCREEN PRODUKT SPECIFICATIONS MODEL: RTP-058F-03 DATE: FEB.09.1999 RONICS TECHNOLOGY.,LTD 5,8” TOUCH SCREEN SPECIFICATION 1 General This document includes the specification of the 5,8” touch screen. This touch screen is 4 wire analog resistive type.

HS40

Abstract: HS60 RTP-150F-01
Contextual Info: TOUCH SCREEN PRODUKT SPECIFICATIONS MODEL: RTP-150F-01 DATE: FEB.09.1999 RONICS TECHNOLOGY.,LTD 15” TOUCH SCREEN SPECIFICATION 1 General This document includes the specification of the 15” touch screen. This touch screen is 4 wire analog resistive type.

hs60

Abstract: HS40 RTP-084F-02 DSA00134561.txt
Contextual Info: TOUCH SCREEN PRODUKT SPECIFICATIONS MODEL: RTP-084F-02 DATE: FEB.09.1999 RONICS TECHNOLOGY.,LTD 8.4” TOUCH SCREEN SPECIFICATION 1 General This document includes the specification of the 8.4” touch screen. This touch screen is 4 wire analog resistive type.

PET FILM

Abstract: hs60 HS40 RTP-121F-03
Contextual Info: TOUCH SCREEN PRODUKT SPECIFICATIONS MODEL: RTP-121F-03 DATE: FEB.09.1999 RONICS TECHNOLOGY.,LTD 12,1” TOUCH SCREEN SPECIFICATION 1 General This document includes the specification of the 12.1” touch screen. This touch screen is 4 wire analog resistive type.

RTP-104F-03

Abstract: HS40 HS60 touch panel 4 wire
Contextual Info: TOUCH SCREEN PRODUKT SPECIFICATIONS MODEL: RTP-104F-03 DATE: FEB.09.1999 RONICS TECHNOLOGY.,LTD 10.4” TOUCH SCREEN SPECIFICATION 1 General This document includes the specification of the 10.4” touch screen. This touch screen is 4 wire analog resistive type.

FW100A9

Contextual Info: Data Sheet September 1997 microelect ronics group Lucent Technologies Beil Labs Innovations FW050A, FW100A, FW150A Power Modules: dc-dc Converters; 36 to 72 Vdc Input, 5 Vdc Output; 50 W to 150 W Features • Wide input range ■ High efficiency: 82% typical

denso

Abstract: IMAPCAR denso toyota TOYOTA lexus LS460 pdf on Pedestrian Detection Traffic sign recognition on Pedestrian Detection traffic light controller using image processing
Contextual Info: Parallel processing for quick and reliable Driving assistance and active safety systems. IMAPCAR on the road NEC El ec t ronic s Cor porat ion “NEC El ec t ronics” and NEC Corporation (“NEC”), with support from Toyota Motor Cor porat ion (“Toyota”) and Denso Corporation

Microprocessor 8048

Abstract: 8048 encoder 8048 keyboard pin diagram of 8048 keyboard 8048 computer keyboard circuit diagram 8048 capacitive key 8048 microprocessor scan codes 8048 microprocessor
Contextual Info: UNICORN MI CR OEL ECT RONICS 24E D TE7fl7ôfl 0GQ0543 4 r - r a - s s -i s - UM82C01 Capacitance Keyboard Encoder CKÉ Features • 16x8 matrix, can build up to 128 key capacitance keyboard ■ Single chip with 16 scan drive outputs and 8 sense inputs ■ Two packages 28 pin for 88 key KB and 40 pin for

2SC3055

Abstract: E3 37497 2sc3055 transistor high power switching transistor
Contextual Info: FUJITSU MICROEL ECT RONICS 31E D E3 3?»H7b2 QQlbSbD a S F M I January 1990 i 9 i T - r 'T m!on1-1_ P R O D U C T P R O F I L E = ¥ FUJITSU - ' 2SC3055 Silicon High Speed Power Transistor DESCRIPTION Th e 2SC 3055 is a silicon NPN planar general purpose, high power switching tran*

2SC2522

Abstract: 15D transistor 2SC2522A R2213 2C2523 2sa1073 2SC25 10ICI
Contextual Info: FUJITSU MICROEL ECT RONICS 31E D B 374=^2 DOlbSlfl 3 S F M I r - 22-13 E f t . r . S F : PRODUCT PROFILE " U H T i C U 2SC2522, 2C2522A, 2C2523 Silicon High Speed Power Transistor DESCRIPTION T he 2S C 2522/2S C 2522A/2SC 2523 are silicon NPN gen era l purpose, high pow er

2732 eprom

Abstract: S2333 eprom 2716 rom 2716 2732 EPROM specification 2716 eprom UV programmable Eprom
Contextual Info: 32,768 Bit 4096x8 Static NMOS ROM •> GO ULD Bec,ronics S2333 General Description Features □ F a s t A c c e s s Tim e: 350ns M axim u m □ F u lly S ta tic O pe ration □ S in g le + 5 V ± 5 % P o w e r S u p p ly □ D ire ctly T T L C o m p a tib le Inputs

K1100A

Abstract: K1100AM F1100 Fox clock oscillator F1100 f1114 fox Fox f1100
Contextual Info: 5SE D FOX ELECTRONICS • 37DnS2 □ 0 G 0 3 S cì 3 ■ " P 5 Q - £ > F1100 SERIES / TTL CLOCK OSCILLATORS FOX F1100 Series Oscillators are TTL Compatible and are manufactured using state of the art thick film hybrid technology. Fox oscillators feature a high quality welded

6164 ram memory

Abstract: intel 6164 ram internal diagram of 7473 pin configuration of intel 80386 Unicorn Microelectronics 6164 memory PA10 PA11 PA12 PA13
Contextual Info: UNICORN MICROE LE CTRON ICS S4E D • ISTÖTÖÖ OOOQÖÖ1 5 ■ UM82C384 Memory Controller I General Description The UM82C384 is one of UMC’s High End AT HEAT Chip Set. It provides memory control functions which facilitate wide ranges of DRAM and CPU speed

HE8807SG

Abstract: HE8815VG HL7831G HL7831HG HL8312E Hitachi Scans-001 HE8403
Contextual Info: HITACHI/ OPTOELECTRONICS 54E J> 44^fc.5GS Q012DE7 261 HL7831G/HG GaAIAs LD Description The HL7831G/HG are 0.78 fun band GaAIAs laser diodes with a double heterojunction structure. MOCVD technology is employed for precise device analysis and optimization to realize low noise.

Contextual Info: HITACHI/COPTOELECTRONICS S l4E D • G012D32 HL7832G/HG bMT « H i m G aAIAsLD *7 Description The HL7832G/HG are 0.78 pm band GaAlAs laser diodes with a double heterojunction structure, and are appropriate as the light sources for various optical application devices, including optical video disk play­

Contextual Info: SAMSUNG ELECTRONICS INC bME D • VSbMlME QDlB^Tb 733 KM62256BL-V CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Extended Operating Voltage: 2.7 ~ S.5V • Fast Access Time: 3V Operation: 240ns Max. 5V Operation: 120ns (Max.)

W24010S-70LL

Abstract: os55
Contextual Info: W24010/LL 128K x 8 CMOS STATIC RAM GENERAL DESCRIPTION The W24010 is a normal-speed, very low-power CMOS static RAM organized as 131072 x 8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond’s high performance CMOS technology.

papers

Abstract: conference system hyundai panel 10 Ronics Ronics Technology springer TOSHIBA flash memory yoshikawa national semiconductor "flash memory" ATM machine
Contextual Info: NVSMW 2000 General Chairman Mike Fliesler Advanced Micro Devices, USA Technical Chairman Financial Chairman Arthur Wang Krishna Parat Hyundai Microelectronics, USA Intel, USA Workshop Administrators Tonya Johnson Hyundai Microelectronics, USA Sunday, February 13 ‘2000

143797 USB ERNI

Abstract: 143777 erni pbt gf 20 143796 1437-80 RIGHT ANGLE TERMINATION 143777 143778 ERNI AMP 925 276
Contextual Info: Universal Serial Bus & Fire Wire Connectors www.erni.com USB Catalog 08/02 UNIVERSAL SERIAL BUS MUSB Series: Right Angle Termination, Single and Stacked Performance Specifications Materials and Finish Shell: Insert: Nickel plated brass, 0.3mm thick PTH: PBT, GF, 94V-0 rated,

Contextual Info: Universal Serial Bus & Fire Wire Connectors www.erni.com USB Catalog 08/02 UNIVERSAL SERIAL BUS MUSB Series: Right Angle Termination, Single and Stacked Performance Specifications Materials and Finish Shell: Insert: Nickel plated brass, 0.3mm thick PTH: PBT, GF, 94V-0 rated,

HY61C16-70

Abstract: HY61C16 61C16 k239
Contextual Info: HYUNDAI ELE CTRO NI CS 03 «tO ^U O Q HTUNUA1 D Ë 1 4t.750ññ OOOOOñT 3 | tL fcU IK U N X C S Ö3 D 0 0 0 0 9 D T?4 b “2 3 -1 2 FEATURES DESCRIPTION The HY61C16 is a high speed, low power, 2048-word by 8-bit static CMOS RAM fabricated using highperformance CMOS process technology. This high

HE8807SG

Abstract: HL7832G HL7832HG HL8312E he8813vg Hitachi Scans-001 LRTBGVTG-U9V5-1 A7A9-5 TT7-6
Contextual Info: H IT A C H I/C O P T O E L E C T R O N IC S S l4 E D • G 012D 32 HL7832G/HG bMT « H GaAIAsLD *7 Description The HL7832G/HG are 0.78 pm band GaAlAs laser diodes with a double heterojunction structure, and are appropriate as the light sources for various optical application devices, including optical video disk play­

Contextual Info: FUJITSU MIC ROE LECTRONIC S 47E D • 374^71^ OOlflflD? 1 ■ May 1990 Edition 1.0 FUJITSU DATA SHEET ~ p 4 tr-J L 3 -Q MB81C81A-25/-35 CMOS 256K-BIT HIGH-SPEED SRAM 256K Words x 1 Bit High-Speed CMOS Static Random AccfeSs Memory Th» Fujitsu MB81C81A is a 262,144 words x 1 bit static random access memory

KM28C16-15

Abstract: KM28C16-20 KM28C17-15 KM28C17-20 KM28C171-15 KM28C16-25 C17 A5 SRAM sheet samsung
Contextual Info: S A M S U N G E L E C T R O N I C S INC b7E T> 7^4142 ÜDlbfl71 T42 • SMGK CMOS EEPROM KM28C16/KM28C17 2 K x 8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C16/KM28C17: Commercial — KM28C16I/KM28C17I: Industrial