ROHM RCD Search Results

resistor cross reference

Abstract: CR 708A Allen-Bradley carbon resistor koa rss stackpole Allen-Bradley rnk RESISTOR LC81 Allen-Bradley resistors 708B GP SERIES RESISTORS
Contextual Info: Fixed Resistor Cross Reference QUICK CROSS REFERENCE GUIDE* CARBON FILM RESISTORS MANLFACTURER NIC IRC KOA PHILLIPS RCD ROMM STACKPOLE SERIES NCF CF CF CR CF R CF NIC ALLENBRADLEY DALE IRC KOA PHILLIPS RCD ROHM STACKPOLE NMR RNK CCF GP MF SFR GP CRB RN METAL FILM RESISTORS

RSD130P10

Abstract: RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200
Contextual Info: 2010 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.

rohm rcd display

Abstract: rohm rcd rohm ic name liquid crystal display rcm rohm rohm liquid crystal display rohm rcd rcm
Contextual Info: Liquid crystal displays Regarding liquid crystal display elements and modules Regarding liquid crystal display elements and modules FManufacturing process outline ROHM liquid crystal display modules are designed for reliability. Furthermore, for panel manufacturing processes requiring special cleanliness, strict control is exercised over handling, raw materials, cleaning methods,

Contextual Info: IC /IC s for Industrial Equipment ROHM CO LTD MGE BA6404 BA6404/BA6404F D B 7 ÖS Ö t 3 2 7 ° lJ h " 7 - i ^ 2-Phase Half-wave Motor Predrivers • BA6404, BA6404F Ü 7 000302=1 - ï f à » 2 *g¥>i BRHM T-Ï2-S2-2S- /Dim ensions Unit : mm BA6404 9.3 ±0.3

ba658

Abstract: BA6587K LT 5238 ba6587 L22TF BA6588K IC FLOOPY DRIVER WC-20 T523S lc227
Contextual Info: ROHM CO LTD 7 a s a cm MOE D ooDmma OA $131 ft} I C / I C s for OA Applications F D D fflU - B Jk@ 5 3 7 i€ B A 6587K /B A 6588K K /-7 < 7 = v T « ? -3 g h R e a d / W r i g h t A m p lifier for F D D • il- fl^ & H / D im e n s io n s BA6587K, BA6588KIÌ, 3 0 ? ,

Contextual Info: RCD100N20 Nch 200V 10A Power MOSFET Data Sheet lOutline VDSS 200V RDS on (Max.) 182mW ID 10A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

C08N25

Contextual Info: RCD080N25 Nch 250V 8A Power MOSFET Data Sheet lOutline VDSS 250V RDS on (Max.) 300mW ID 8A PD 20W CPT3 (SC-63) <SOT-428> (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.

Contextual Info: RCD060N25 Nch 250V 6A Power MOSFET Data Sheet lOutline VDSS 250V RDS on (Max.) 530mW ID 6A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.

Contextual Info: RCD100N20 Nch 200V 10A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 182mW ID 10A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

Contextual Info: RCD051N20 Data Sheet Nch 200V 5.0A Power MOSFET lOutline VDSS 200V RDS on (Max.) 760mW ID 5.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low on-resistance. 3) Drive circuits can be simple. (1) Gate (2) Drain (3) Source 4) Parallel use is easy.

Contextual Info: RCD051N20 Nch 200V 5.0A Power MOSFET Data Sheet lOutline VDSS 200V RDS on (Max.) 760mW ID 5.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low on-resistance. 3) Drive circuits can be simple. (1) Gate (2) Drain (3) Source 4) Parallel use is easy.

Contextual Info: RCD041N25 Nch 250V 4.0A Power MOSFET Data Sheet lOutline VDSS 250V RDS on (Max.) 1300mW ID 4.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

Contextual Info: RCD041N25 Data Sheet Nch 250V 4.0A Power MOSFET lOutline VDSS 250V RDS on (Max.) 1300mW ID 4.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

Contextual Info: RCD075N20 Nch 200V 7.5A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 325mW ID 7.5A PD 20W CPT3 (SC-63) <SOT-428> (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.

RCD041N25

Contextual Info: RCD041N25 Nch 250V 4.0A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 1300mW ID 4.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

Contextual Info: RCD041N25 RCD041N25 Datasheet Nch 250V 4.0A Power MOSFET lOutline VDSS 250V RDS on (Max.) 1300mW ID 4.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

Contextual Info: RCD100N19 Nch 190V 10A Power MOSFET Datasheet lOutline VDSS 190V RDS on (Max.) 182mW ID 10A PD CPT3 (SC-63) <SOT-428> (3) (2) (1) 20W lFeatures lInner circuit 1) Low voltage drive (4V drive). (1) Gate (2) Drain (3) Source 2) Low on-resistance. 3) Fast switching speed.

Contextual Info: RCD051N20 Datasheet Nch 200V 5.0A Power MOSFET lOutline VDSS 200V RDS on (Max.) 760mW ID 5.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low on-resistance. 3) Drive circuits can be simple. (1) Gate (2) Drain (3) Source 4) Parallel use is easy.

C10N19

Abstract: RCD-100
Contextual Info: RCD100N19 Datasheet Nch 190V 10A Power MOSFET lOutline VDSS 190V RDS on (Max.) 182mW ID 10A PD CPT3 (SC-63) <SOT-428> (3) (2) (1) 20W lFeatures lInner circuit 1) Low voltage drive (4V drive). (1) Gate (2) Drain (3) Source 2) Low on-resistance. 3) Fast switching speed.

C08N25

Abstract: RCD080N25 sot428
Contextual Info: RCD080N25 Nch 250V 8A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 300mW ID 8A PD 20W CPT3 (SC-63) <SOT-428> (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.

RCD100N19

Contextual Info: RCD100N19 Nch 190V 10A Power MOSFET Datasheet lOutline VDSS 190V RDS on (Max.) 182mW ID 10A PD CPT3 (SC-63) <SOT-428> (3) (2) (1) 20W lFeatures lInner circuit 1) Low voltage drive (4V drive). (1) Gate (2) Drain (3) Source 2) Low on-resistance. 3) Fast switching speed.

Contextual Info: RCD051N20 Nch 200V 5.0A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 760mW ID 5.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low on-resistance. 3) Drive circuits can be simple. (1) Gate (2) Drain (3) Source 4) Parallel use is easy.

sot428 Part marking

Contextual Info: RCD051N20 RCD051N20 Datasheet Nch 200V 5.0A Power MOSFET lOutline VDSS 200V RDS on (Max.) 760mW ID 5.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low on-resistance. 3) Drive circuits can be simple. (1) Gate (2) Drain (3) Source

Contextual Info: RCD075N19 Datasheet Nch 190V 7.5A Power MOSFET lOutline VDSS 190V RDS on (Max.) 336mW ID 7.5A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low voltage drive (4V drive). (1) Gate (2) Drain (3) Source 2) Low on-resistance. 3) Fast switching speed.