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    ROGERS 6010.5 Search Results

    ROGERS 6010.5 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    75160-102-11LF
    Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded vertical header, through hole, single Row,11 position, 2.54mm pitch PDF
    75160-102-06LF
    Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded vertical header, through hole, single Row,6 position, 2.54mm pitch PDF
    88960-103LF
    Amphenol Communications Solutions Metral® Power Connectors, Backplane Power Connectors, 4 Row Power Header,Vertical Solder-to-Board, Wide Body. PDF
    75160-101-05LF
    Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded vertical header, through hole, single Row,5 position, 2.54mm pitch PDF
    G832MC010601022HR
    Amphenol Communications Solutions 0.80mm Board-to-Board 100Ω Connector, Pitch 0.8mm, Height 3.7 mm, 60 Positions, Dual Row, BTB Vertical Receptacle SMT, Gold Flash Black. PDF

    ROGERS 6010.5 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    j78 transistor

    Abstract: transistor j7 transistor 669 transistor j4 13MM PH1214-3L j4 transistor MICROWAVE TEST FIXTURE
    Contextual Info: an AMP company Radar Pulsed Power Transistor, 3W, 2ms Pulse, 20% Duty 1.2 - 1.4 GHz PH=l214=3L Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors


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    PH1214-3L j78 transistor transistor j7 transistor 669 transistor j4 13MM PH1214-3L j4 transistor MICROWAVE TEST FIXTURE PDF

    Rogers 6010.5

    Abstract: epco 6010.5 T-33-J-S
    Contextual Info: n/A-con p h o 2 5E Sb4250S D QaDDSS? 311 MAP y p o MICROWAVE PULSED POWER TRANSISTOR PH1090 - 600S REV. PREUMINARY » M /A -C C M/A-COM PHI, INC. T-33'JS DESIGN CHARACTERISTICS • • • • • • Short Pulse Operation New High Efficiency Transistor Geometry


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    Sb4250S PH1090 ATC100A 9BC155H050KDADFB, D--13 Rogers 6010.5 epco 6010.5 T-33-J-S PDF

    13MM

    Abstract: transistor Common Base configuration capacitor 50 uf Rogers 6010.5
    Contextual Info: z-s?=‘= .-= - = -M= ZF an AMP company * 3 = = - Radar Pulsed Power Transistor, 135W, 20~s Pulse, 1% Duty PH2931 -I 3% 2.9 - 3.1 GHz Features NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry


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    PH2931 PH2931-135s 13MM transistor Common Base configuration capacitor 50 uf Rogers 6010.5 PDF

    Rogers 6010.5

    Abstract: PH1214-20EL PH1214-25M 6010.5 transistor j39
    Contextual Info: -F-z = -=-=c =z z .-= = E an AMP company * Radar Pulsed Power Transistor, 2OW, 2ms Pulse, 10% Duty 1.2 - 1.4 GHz PHI 214-20EL Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry


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    214-20EL PH1214-20EL PH1214-25M Rogers 6010.5 PH1214-20EL PH1214-25M 6010.5 transistor j39 PDF

    b 595 transistor

    Abstract: Mallory Capacitor transistor b 595 J3 transistor transistor 15j30 Rogers 6010.5 PH3135-5M electrolytic Mallory Capacitor MICROWAVE TEST FIXTURE
    Contextual Info: =s = =-= ‘, = * an AMP .- -=r= FF company Radar Pulsed Power Transistor, 5W, loops Pulse, 10% Duty PH31355M 3.1 - 3.5 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry


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    PH31355M 15-j3 b 595 transistor Mallory Capacitor transistor b 595 J3 transistor transistor 15j30 Rogers 6010.5 PH3135-5M electrolytic Mallory Capacitor MICROWAVE TEST FIXTURE PDF

    PH2731-20M

    Abstract: 3 w RF POWER TRANSISTOR 2.7 ghz
    Contextual Info: an AMP company Radar Pulsed Power Transistor, 2OW, loops Pulse, 10% Duty PH2731-20M 2.7 - 3.1 GHz v2.00 9co Features ,-^ :22.85> NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigicated Geometry


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    PH2731-20M PI42731 PH2731-20M 3 w RF POWER TRANSISTOR 2.7 ghz PDF

    PT 4107

    Abstract: transistor tt 2222 Rogers 6010.5 TT 2222
    Contextual Info: M / A -C O fl P E S Z 1> H 0 SbMSEGS GOODSI^ bis • MAP sm e MICROWAVE PULSED POWER TRANSISTOR PH9612 - 75 REV. PRELIMINARY * & u / A -r < M/A-COM PHI, INC. T-33-/3 DESIGN CHARACTERISTICS • High Efficiency Transistor Geometry • Broadband 960 • 1215 MHz Operation


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    PH9612 T-33-/3 MD1889 ATC100A 195D555X0050F PT 4107 transistor tt 2222 Rogers 6010.5 TT 2222 PDF

    Rogers 6010.5

    Contextual Info: b3E D 5t,422os nanaam ?T7 hap AVA MICROWAVE PULSED POWER TRANSISTOR PH1214-4.0M REV. A 09/09/91 — n/A-con p h M / A . r O M PHI, D M/A-COM INC. * o DESIGN CHARACTERISTICS • • • • • 100 uS Pulse Operation Broadband 1.2 - 1.4 G H z Operation Common Base Configuration


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    422os PH1214-4 TT50M50A Rogers 6010.5 PDF

    wacom

    Abstract: 3 w RF POWER TRANSISTOR 2.7 ghz PH2729-8SM
    Contextual Info: = = -E-= S‘,J =- = E .- -= = = r - an AMP company * Radar Pulsed Power Transistor, 8.5W, loops Pulse, 10% Duty PH2729-8SM 2.7 - 2.9 GHz v2.00 Features 903 22.86: NPM Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation


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    PH2729-8SM Sii255-24-f wacom 3 w RF POWER TRANSISTOR 2.7 ghz PH2729-8SM PDF

    TRANSISTOR zo 109 ma

    Abstract: transistor zo 109 transistor TI 310 Rogers 6010.5 PH2856
    Contextual Info: Linear Accelerator Pulsed Power Transistor PH2856-22 22 Watts, 2.856 GHz, 12 jlis Pulse, 10% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • High Efficiency Interdigitated Geometry


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    PH2856-22 TT50M50A ATC100A TRANSISTOR zo 109 ma transistor zo 109 transistor TI 310 Rogers 6010.5 PH2856 PDF

    P77 transistor

    Abstract: 1.5 j63 .15 j63 BZ15 ECG5016A l 9113 J4 81 diode
    Contextual Info: ,z= i-s L-J =7 f .- an AMP company * z z - = = Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty PHI 214-0.851 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class A Operation Matrix Geometry


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    ECG5016A PH1214- P77 transistor 1.5 j63 .15 j63 BZ15 ECG5016A l 9113 J4 81 diode PDF

    Di 762 transistor

    Abstract: transistor a015 transistor npn a 1930 wacom connector wacom 33w NPN 13MM PH1920-33
    Contextual Info: an AMP company Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz PHI 920-33 v2.01 Features NPN Silicon Microwave Power Transistor Common Emitter Class AB Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metallization System


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    PH1920-33 lN4245 73050258-S Di 762 transistor transistor a015 transistor npn a 1930 wacom connector wacom 33w NPN 13MM PH1920-33 PDF

    Transistor s41

    Abstract: b 595 transistor linear accelerator L200 PH2856-160 transistor b 595
    Contextual Info: an AMP cotn~any Linear Accelerator Pulsed Power Transistor, 16OW, 12~s Pulse, 10% Duty 2.856 GHz PH2856-160 Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation High Efficiency Interdigitated Geometry


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    PH2856-160 Transistor s41 b 595 transistor linear accelerator L200 PH2856-160 transistor b 595 PDF

    transistor j5

    Abstract: ER105 diode j54 PH1920-45 transistor npn a 1930 wacom transistor 930 1/transistor j5
    Contextual Info: SE z-z * =g = -= -A = = -r an AMP company Wireless Bipolar Power Transistor, 45W 1930 - 1990 MHz PHI 920-45 Features NPN Silicon Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Diffused Emitter Ballasting Gold Metalization System


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    PDF

    PH2729-65M

    Contextual Info: z-z -,-= 2 .-= -= -= =c r s an AMP company * Radar Pulsed Power Transistor, 65W, loops Pulse, 10% Duty PH2729-65M 2.7 - 2.9 GHz I v2.00 .300 22.86 Features -:i~~~)-j ( NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation


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    PH2729-65M Curren44) 2052-56X-02 PH2729-65M PDF

    transistor 81 110 w 65

    Abstract: 13MM ATC100A PH3135-20M transistor 81 33 145J1
    Contextual Info: MÙKOV, W an A M P company Radar Pulsed Power Transistor, 20W, 100|is Puise, 10% Duty 3.1-3.5 GHz PH3135-20M V2.00 Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry


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    10Ojas PH3135-20M TT50M50A ATC100A transistor 81 110 w 65 13MM ATC100A PH3135-20M transistor 81 33 145J1 PDF

    pin26

    Abstract: J22 transistor PH1090-175L
    Contextual Info: Avionics Pulsed Power Transistor 175 Watts, 1030-1090 MHz, 250µs Pulse, 10 % Duty PH1090-175L PH1090-175L Avionics Pulsed Power Transistor - 175 Watts, 1030-1090 MHz, 250µs Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor


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    PH1090-175L pin26 J22 transistor PH1090-175L PDF

    Contextual Info: Afa Satellite Communications Power Transistor PH 1600-30 30 Watts, 1.55-1.65 GHz Features • • • • • Outline Drawing C W Operation Internal Impedance Matching Common Base Configuration Multilayer Metal / Ceramic Package Gold Metallization System Absolute Maximum Ratings at 25°C


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    TT50M ATC100A 5bM220S PDF

    2052-5636-02

    Abstract: TIC 122 Transistor J3 transistor tic 122 13MM ATC100A PH3135-25S RF NPN POWER TRANSISTOR 3 GHZ 4 ghz transistor
    Contextual Info: yM Ü KO VI m an AM P company Radar Pulsed Power Transistor, 25W, 2jxs Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-25S V2.00 Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry


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    PH3135-25S not81 TT50M50A ATC100A 2052-5636-02 TIC 122 Transistor J3 transistor tic 122 13MM ATC100A PH3135-25S RF NPN POWER TRANSISTOR 3 GHZ 4 ghz transistor PDF

    transistor b 595

    Abstract: ATC100A PH1819-45
    Contextual Info: = z-P= Coming Attractions an AMP company Wireless Bipolar Power Transistor, 45W 1805 - 1880 MHz NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metalization System


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    PHl819-45 transistor b 595 ATC100A PH1819-45 PDF

    RF NPN POWER TRANSISTOR 3 GHZ 5w

    Contextual Info: Æ an A M P com t pan y Radar Pulsed Power Transistor, 5W, 2|is Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-5S V 2 .0 0 Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry


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    PH3135-5S TT50M50A ATC100A RF NPN POWER TRANSISTOR 3 GHZ 5w PDF

    b 595 transistor schematic

    Abstract: PH0810-15 IC 8088 Icq-100 Pacific Wireless 1N4245 f100 0725 5 POUT15W
    Contextual Info: Wireless Power Transistor 15 Watts, 850-960 MHz PH0810-15 PH0810-15 Wireless Power Transistor 15 Watts, 850 - 960 MHz 1 Features • • • • • Outline Drawing Designed for Linear Amplifier Applications Class AB: -30 dBc Typ 3rd IMD at 15 Watts PEP Common Emitter Configuration


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    PH0810-15 1N4245) b 595 transistor schematic PH0810-15 IC 8088 Icq-100 Pacific Wireless 1N4245 f100 0725 5 POUT15W PDF

    PH1516-100

    Contextual Info: an AMP comDanv Wireless Bipolar 1450 - 1550 MHz Power Transistor, 1 OOW PH1516-100 Features - _~. - - Designed for Linear Amplifier Applications Class AB: -32 dBc Typ 3rd IMD at 100 Watts PEP Common Emitter Configuration Internal Input Impedance Matching


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    PH1516-100 5000pF lN5417 PH1516-100 PDF

    C1016 transistor

    Abstract: transistor c1016 1J51 13MM ATC100A PH3135-90S c330 TRANSISTOR 1J512
    Contextual Info: an A M P company Radar Pulsed Power Transistor, 90W, 2|is Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-90S V2.00 Features • • • • • • • • .900 2 2 .8 6 NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation


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    PH3135-90S TT50M50A ATC100A 1J512' C1016 transistor transistor c1016 1J51 13MM ATC100A PH3135-90S c330 TRANSISTOR 1J512 PDF