ROGERS 6010.5 Search Results

ROGERS 6010.5 Result Highlights (5)

Part	Manufacturer	Description	Download
75160-102-11LF	Amphenol Communications Solutions	BergStik®, Board to Board connector, Unshrouded vertical header, through hole, single Row,11 position, 2.54mm pitch	PDF
75160-102-06LF	Amphenol Communications Solutions	BergStik®, Board to Board connector, Unshrouded vertical header, through hole, single Row,6 position, 2.54mm pitch	PDF
88960-103LF	Amphenol Communications Solutions	Metral® Power Connectors, Backplane Power Connectors, 4 Row Power Header,Vertical Solder-to-Board, Wide Body.	PDF
75160-101-05LF	Amphenol Communications Solutions	BergStik®, Board to Board connector, Unshrouded vertical header, through hole, single Row,5 position, 2.54mm pitch	PDF
G832MC010601022HR	Amphenol Communications Solutions	0.80mm Board-to-Board 100Ω Connector, Pitch 0.8mm, Height 3.7 mm, 60 Positions, Dual Row, BTB Vertical Receptacle SMT, Gold Flash Black.	PDF

ROGERS 6010.5 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
j78 transistor Abstract: transistor j7 transistor 669 transistor j4 13MM PH1214-3L j4 transistor MICROWAVE TEST FIXTURE Contextual Info: an AMP company Radar Pulsed Power Transistor, 3W, 2ms Pulse, 20% Duty 1.2 - 1.4 GHz PH=l214=3L Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors	Original	PH1214-3L j78 transistor transistor j7 transistor 669 transistor j4 13MM PH1214-3L j4 transistor MICROWAVE TEST FIXTURE	PDF
Rogers 6010.5 Abstract: epco 6010.5 T-33-J-S Contextual Info: n/A-con p h o 2 5E Sb4250S D QaDDSS? 311 MAP y p o MICROWAVE PULSED POWER TRANSISTOR PH1090 - 600S REV. PREUMINARY » M /A -C C M/A-COM PHI, INC. T-33'JS DESIGN CHARACTERISTICS • • • • • • Short Pulse Operation New High Efficiency Transistor Geometry	OCR Scan	Sb4250S PH1090 ATC100A 9BC155H050KDADFB, D--13 Rogers 6010.5 epco 6010.5 T-33-J-S	PDF
13MM Abstract: transistor Common Base configuration capacitor 50 uf Rogers 6010.5 Contextual Info: z-s?=‘= .-= - = -M= ZF an AMP company * 3 = = - Radar Pulsed Power Transistor, 135W, 20~s Pulse, 1% Duty PH2931 -I 3% 2.9 - 3.1 GHz Features NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry	Original	PH2931 PH2931-135s 13MM transistor Common Base configuration capacitor 50 uf Rogers 6010.5	PDF
Rogers 6010.5 Abstract: PH1214-20EL PH1214-25M 6010.5 transistor j39 Contextual Info: -F-z = -=-=c =z z .-= = E an AMP company * Radar Pulsed Power Transistor, 2OW, 2ms Pulse, 10% Duty 1.2 - 1.4 GHz PHI 214-20EL Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry	Original	214-20EL PH1214-20EL PH1214-25M Rogers 6010.5 PH1214-20EL PH1214-25M 6010.5 transistor j39	PDF
b 595 transistor Abstract: Mallory Capacitor transistor b 595 J3 transistor transistor 15j30 Rogers 6010.5 PH3135-5M electrolytic Mallory Capacitor MICROWAVE TEST FIXTURE Contextual Info: =s = =-= ‘, = * an AMP .- -=r= FF company Radar Pulsed Power Transistor, 5W, loops Pulse, 10% Duty PH31355M 3.1 - 3.5 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry	Original	PH31355M 15-j3 b 595 transistor Mallory Capacitor transistor b 595 J3 transistor transistor 15j30 Rogers 6010.5 PH3135-5M electrolytic Mallory Capacitor MICROWAVE TEST FIXTURE	PDF
PH2731-20M Abstract: 3 w RF POWER TRANSISTOR 2.7 ghz Contextual Info: an AMP company Radar Pulsed Power Transistor, 2OW, loops Pulse, 10% Duty PH2731-20M 2.7 - 3.1 GHz v2.00 9co Features ,-^ :22.85> NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigicated Geometry	Original	PH2731-20M PI42731 PH2731-20M 3 w RF POWER TRANSISTOR 2.7 ghz	PDF
PT 4107 Abstract: transistor tt 2222 Rogers 6010.5 TT 2222 Contextual Info: M / A -C O fl P E S Z 1> H 0 SbMSEGS GOODSI^ bis • MAP sm e MICROWAVE PULSED POWER TRANSISTOR PH9612 - 75 REV. PRELIMINARY * & u / A -r < M/A-COM PHI, INC. T-33-/3 DESIGN CHARACTERISTICS • High Efficiency Transistor Geometry • Broadband 960 • 1215 MHz Operation	OCR Scan	PH9612 T-33-/3 MD1889 ATC100A 195D555X0050F PT 4107 transistor tt 2222 Rogers 6010.5 TT 2222	PDF
Rogers 6010.5 Contextual Info: b3E D 5t,422os nanaam ?T7 hap AVA MICROWAVE PULSED POWER TRANSISTOR PH1214-4.0M REV. A 09/09/91 — n/A-con p h M / A . r O M PHI, D M/A-COM INC. * o DESIGN CHARACTERISTICS • • • • • 100 uS Pulse Operation Broadband 1.2 - 1.4 G H z Operation Common Base Configuration	OCR Scan	422os PH1214-4 TT50M50A Rogers 6010.5	PDF
wacom Abstract: 3 w RF POWER TRANSISTOR 2.7 ghz PH2729-8SM Contextual Info: = = -E-= S‘,J =- = E .- -= = = r - an AMP company * Radar Pulsed Power Transistor, 8.5W, loops Pulse, 10% Duty PH2729-8SM 2.7 - 2.9 GHz v2.00 Features 903 22.86: NPM Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation	Original	PH2729-8SM Sii255-24-f wacom 3 w RF POWER TRANSISTOR 2.7 ghz PH2729-8SM	PDF
TRANSISTOR zo 109 ma Abstract: transistor zo 109 transistor TI 310 Rogers 6010.5 PH2856 Contextual Info: Linear Accelerator Pulsed Power Transistor PH2856-22 22 Watts, 2.856 GHz, 12 jlis Pulse, 10% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • High Efficiency Interdigitated Geometry	OCR Scan	PH2856-22 TT50M50A ATC100A TRANSISTOR zo 109 ma transistor zo 109 transistor TI 310 Rogers 6010.5 PH2856	PDF
P77 transistor Abstract: 1.5 j63 .15 j63 BZ15 ECG5016A l 9113 J4 81 diode Contextual Info: ,z= i-s L-J =7 f .- an AMP company * z z - = = Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty PHI 214-0.851 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class A Operation Matrix Geometry	Original	ECG5016A PH1214- P77 transistor 1.5 j63 .15 j63 BZ15 ECG5016A l 9113 J4 81 diode	PDF
Di 762 transistor Abstract: transistor a015 transistor npn a 1930 wacom connector wacom 33w NPN 13MM PH1920-33 Contextual Info: an AMP company Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz PHI 920-33 v2.01 Features NPN Silicon Microwave Power Transistor Common Emitter Class AB Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metallization System	Original	PH1920-33 lN4245 73050258-S Di 762 transistor transistor a015 transistor npn a 1930 wacom connector wacom 33w NPN 13MM PH1920-33	PDF
Transistor s41 Abstract: b 595 transistor linear accelerator L200 PH2856-160 transistor b 595 Contextual Info: an AMP cotn~any Linear Accelerator Pulsed Power Transistor, 16OW, 12~s Pulse, 10% Duty 2.856 GHz PH2856-160 Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation High Efficiency Interdigitated Geometry	Original	PH2856-160 Transistor s41 b 595 transistor linear accelerator L200 PH2856-160 transistor b 595	PDF
transistor j5 Abstract: ER105 diode j54 PH1920-45 transistor npn a 1930 wacom transistor 930 1/transistor j5 Contextual Info: SE z-z * =g = -= -A = = -r an AMP company Wireless Bipolar Power Transistor, 45W 1930 - 1990 MHz PHI 920-45 Features NPN Silicon Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Diffused Emitter Ballasting Gold Metalization System	Original		PDF

PH2729-65M Contextual Info: z-z -,-= 2 .-= -= -= =c r s an AMP company * Radar Pulsed Power Transistor, 65W, loops Pulse, 10% Duty PH2729-65M 2.7 - 2.9 GHz I v2.00 .300 22.86 Features -:i~~~)-j ( NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation	Original	PH2729-65M Curren44) 2052-56X-02 PH2729-65M	PDF
transistor 81 110 w 65 Abstract: 13MM ATC100A PH3135-20M transistor 81 33 145J1 Contextual Info: MÙKOV, W an A M P company Radar Pulsed Power Transistor, 20W, 100\|is Puise, 10% Duty 3.1-3.5 GHz PH3135-20M V2.00 Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry	OCR Scan	10Ojas PH3135-20M TT50M50A ATC100A transistor 81 110 w 65 13MM ATC100A PH3135-20M transistor 81 33 145J1	PDF
pin26 Abstract: J22 transistor PH1090-175L Contextual Info: Avionics Pulsed Power Transistor 175 Watts, 1030-1090 MHz, 250µs Pulse, 10 % Duty PH1090-175L PH1090-175L Avionics Pulsed Power Transistor - 175 Watts, 1030-1090 MHz, 250µs Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor	Original	PH1090-175L pin26 J22 transistor PH1090-175L	PDF
Contextual Info: Afa Satellite Communications Power Transistor PH 1600-30 30 Watts, 1.55-1.65 GHz Features • • • • • Outline Drawing C W Operation Internal Impedance Matching Common Base Configuration Multilayer Metal / Ceramic Package Gold Metallization System Absolute Maximum Ratings at 25°C	OCR Scan	TT50M ATC100A 5bM220S	PDF
2052-5636-02 Abstract: TIC 122 Transistor J3 transistor tic 122 13MM ATC100A PH3135-25S RF NPN POWER TRANSISTOR 3 GHZ 4 ghz transistor Contextual Info: yM Ü KO VI m an AM P company Radar Pulsed Power Transistor, 25W, 2jxs Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-25S V2.00 Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry	OCR Scan	PH3135-25S not81 TT50M50A ATC100A 2052-5636-02 TIC 122 Transistor J3 transistor tic 122 13MM ATC100A PH3135-25S RF NPN POWER TRANSISTOR 3 GHZ 4 ghz transistor	PDF
transistor b 595 Abstract: ATC100A PH1819-45 Contextual Info: = z-P= Coming Attractions an AMP company Wireless Bipolar Power Transistor, 45W 1805 - 1880 MHz NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metalization System	Original	PHl819-45 transistor b 595 ATC100A PH1819-45	PDF
RF NPN POWER TRANSISTOR 3 GHZ 5w Contextual Info: Æ an A M P com t pan y Radar Pulsed Power Transistor, 5W, 2\|is Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-5S V 2 .0 0 Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry	OCR Scan	PH3135-5S TT50M50A ATC100A RF NPN POWER TRANSISTOR 3 GHZ 5w	PDF
b 595 transistor schematic Abstract: PH0810-15 IC 8088 Icq-100 Pacific Wireless 1N4245 f100 0725 5 POUT15W Contextual Info: Wireless Power Transistor 15 Watts, 850-960 MHz PH0810-15 PH0810-15 Wireless Power Transistor 15 Watts, 850 - 960 MHz 1 Features • • • • • Outline Drawing Designed for Linear Amplifier Applications Class AB: -30 dBc Typ 3rd IMD at 15 Watts PEP Common Emitter Configuration	Original	PH0810-15 1N4245) b 595 transistor schematic PH0810-15 IC 8088 Icq-100 Pacific Wireless 1N4245 f100 0725 5 POUT15W	PDF
PH1516-100 Contextual Info: an AMP comDanv Wireless Bipolar 1450 - 1550 MHz Power Transistor, 1 OOW PH1516-100 Features - _~. - - Designed for Linear Amplifier Applications Class AB: -32 dBc Typ 3rd IMD at 100 Watts PEP Common Emitter Configuration Internal Input Impedance Matching	Original	PH1516-100 5000pF lN5417 PH1516-100	PDF
C1016 transistor Abstract: transistor c1016 1J51 13MM ATC100A PH3135-90S c330 TRANSISTOR 1J512 Contextual Info: an A M P company Radar Pulsed Power Transistor, 90W, 2\|is Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-90S V2.00 Features • • • • • • • • .900 2 2 .8 6 NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation	OCR Scan	PH3135-90S TT50M50A ATC100A 1J512' C1016 transistor transistor c1016 1J51 13MM ATC100A PH3135-90S c330 TRANSISTOR 1J512	PDF

ROGERS 6010.5 Search Results

ROGERS 6010.5 Result Highlights (5)

ROGERS 6010.5 Datasheets Context Search

j78 transistor

Rogers 6010.5

13MM

Rogers 6010.5

b 595 transistor

PH2731-20M

PT 4107

Rogers 6010.5

wacom

TRANSISTOR zo 109 ma

P77 transistor

Di 762 transistor

Transistor s41

transistor j5

PH2729-65M

transistor 81 110 w 65

pin26

2052-5636-02

transistor b 595

RF NPN POWER TRANSISTOR 3 GHZ 5w

b 595 transistor schematic

PH1516-100

C1016 transistor