ROGERS 5880 Search Results

RO4403

Abstract: Rogers RO4003 rt/duroid 5880 RO4450F rogers 5880 RO3006 RO4350B rogers laminate materials RO4450B RO3210
Contextual Info: Ordering Information: Standard Thickness, Tolerance and Panel Size Rogers’ high frequency laminates can be purchased by contacting a Rogers Customer Service Representative at 480 961-1382 or one of our international offices listed below. To ensure that you receive the material for your application, please include order information for each of the

rogers 5880

Abstract: SMP1371-087LF s1988 SMP137 SMP1345-087LF
Contextual Info: Applications • Series/shunt elements in high power HF/VHF/ UHF transmit/receive T/R switches High Power PIN Diodes Features Description • Very low thermal resistance for excellent power handling: 40 W C/W typical • Low series resistance – SMP1324-087LF:

rogers 5880

Abstract: UT70-25 1008CS-102XKBC BLF647 transistor 2164 transistor 2001 H1 rf transistor smd pages 2222 595 smd transistor w1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Product specification Supersedes data of 2001 Aug 02 2001 Nov 27 Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 FEATURES PINNING - SOT540A • High power gain

smd transistor A6

Abstract: transistor SMD A6
Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D392 BLF647 UHF power LDMOS transistor Product specification Supersedes data of 2001 Aug 02 2001 Nov 27 Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 PINNING - SOT540A FEATURES • High power gain

22 pf TEKELEC

Abstract: BLF647 transistor 2001 H1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Preliminary specification 2001 Mar 27 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF647 PINNING - SOT540A FEATURES • High power gain PIN DESCRIPTION

TEKELEC

Abstract: 1800 ldmos sot540a transistor 2001 H1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Preliminary specification 2001 July 24 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF647 PINNING - SOT540A FEATURES • High power gain PIN DESCRIPTION

C16dJ

Abstract: smd transistor G18 smd transistor rc3 rogers 5880 BLF861 uhf tv power transistor 250 w smd L19 TRANSISTOR SMD w2 UT70-25 multilayer ceramic capacitor
Contextual Info: DISCRETE SEMICONDUCTORS Preliminary specification Supersedes data of 1999 Sep 02 Philips Sem iconductors 2000 Feb 18 PHILIPS Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861 FEATURES PINNING - SOT54QA • High power gain PIN

Surface Mount

Abstract: BT-0030SM
Contextual Info: MINIATURE SURFACE MOUNT BIAS TEE BT-0030SM Features     Frequency Range 20 MHz to 30 GHz 1 Watt RF Power Handling Miniature Surface Mount Package Reflow Solderable Electrical Specifications - Specifications guaranteed from -55 to +100C, measured in a 50-Ohm system

Contextual Info: CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and

Surface Mount

Abstract: BT-0034SM
Contextual Info: MINIATURE SURFACE MOUNT BIAS TEE BT-0034SM Features      Frequency Range: 500 kHz to 34 GHz Frequency Range with External Coil: 5 kHz to 34 GHz 1 Watt RF Power Handling Miniature Surface Mount Package Reflow Solderable Electrical Specifications - Specifications guaranteed from -55 to +100C, measured in a 50-Ohm system

smd transistor 581

Abstract: 2222 581 16641 27291 BLF1822-10 C19 transistor MGW655
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1822-10 UHF power LDMOS transistor Product specification Supersedes data of 2001 Aug 16 2002 Mar 12 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 PINNING - SOT467C FEATURES • Designed for broadband operation HF to 2.2 GHz

smd transistor 581

Abstract: 2222-581 BLF1822-10 TEKELEC 302
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1822-10 UHF power LDMOS transistor Product specification Supersedes data of 2002 Mar 12 2003 Feb 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 FEATURES PINNING - SOT467C • Typical 2-tone performance at a supply voltage of 26 V

MADL-0110

Abstract: ODS-30 MADL01 MADL-011009-01340W
Contextual Info: MADL-0110 Series Silicon PIN Limiter Diodes V1 Chip Outline Features • • • • • • • Low Insertion Loss and Noise Figure High Peak and Average Operating Power Various P1dB Compression Powers Low Flat Leakage Power Proven Reliable, Silicon Nitride Passivation

Contextual Info: CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and

NE3517S03

Abstract: rt/duroid 5880 RT DUROID 5880 NE3517S03-A marking t1c rogers 5880 HS350 NE3517S03-T1D-A NE3517S03-T1C rt duroid
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS

NE3517S03-A

Abstract: NE3517S03-T1C NE3517S03 HS350
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS

Contextual Info: MA4L Series Silicon PIN Limiters RoHS Compliant M/A-COM Products Rev. V12 Features • • • • • Low Insertion Loss and Noise Figure High Peak and Average Operating Power Various P1dB Compression Powers Low Flat Leakage Power Proven Reliable, Silicon Nitride Passivation

Contextual Info: MA4L Series Silicon PIN Limiters RoHS Compliant M/A-COM Products Rev. V11 Features • • • • • Low Insertion Loss and Noise Figure High Peak and Average Operating Power Various P1dB Compression Powers Low Flat Leakage Power Proven Reliable, Silicon Nitride Passivation

RT DUROID 5880

Abstract: NE3512 NE3512S02-T1D-A PG10592EJ01V0DS HS350
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package APPLICATIONS

TB246

Contextual Info: A April 1, 20155 T TB246 Frequenccy=136-174MHz Pout=100W Gaain=14dB Vdss=12.5Vdcc Id dq=0.8A Efficciency=63% % SR726 PH: 8805 484-4210 FAX:(805)48 84-3393 1110 Avenida Acasso, Camarillo CA C 93012 ww ww.polyfet.com m April 1, 2015 120.0 17.0 90.0 16.0 60.0

NE3514S02

Abstract: NE3514 NE3514S02-A transistor "micro-x" "marking" 3 RT DUROID 5880 NE3514S02-T1D NE3514S02-T1C-A ir260 N-CHANNEL HJ-FET NE3514S02-T1D-A
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz • Micro-X plastic S02 package APPLICATIONS

tip 134

Contextual Info: MA4L Series Silicon PIN Limiter Chips RoHS Compliant M/A-COM Products Rev. V9 Features • • • • • Low Insertion Loss and Noise Figure High Peak and Average Operating Power Various P1dB Compression Powers Low Flat Leakage Power Proven and Reliable Silicon Nitride Passivation

MA4L401-30

Abstract: MA4L011-186 ma4l011 MA4L401-132 rogers 5880 MA4L062-134 1056 coil gold detector MA4L011-30 SMD MARKING CODE HF
Contextual Info: MA4L Series Silicon PIN Limiter Diodes V13 Features • • • • • • Low Insertion Loss and Noise Figure High Peak and Average Operating Power Various P1dB Compression Powers Low Flat Leakage Power Proven Reliable, Silicon Nitride Passivation RoHS Compliant

rogers 5880

Contextual Info: MA4L Series Silicon PIN Limiter Diodes V14 Features • • • • • • Low Insertion Loss and Noise Figure High Peak and Average Operating Power Various P1dB Compression Powers Low Flat Leakage Power Proven Reliable, Silicon Nitride Passivation RoHS Compliant