1056 Search Results

LXT0805GW

Abstract: SML-LXT0805GW-TR "U79"
Contextual Info: UNCONTROLLED DOCUMENT 2.00 [0.Û79] C ATH D D E 1.40 [0.055] REV. MARK 12 125 :o.Q49: 1,30 [0,051] 0,30 [0,0121 — 0.80 [0.031] PART NUMBER REV. SML-LXT0805GW -TR F E.C.N. NUMBER AND REVISION COMMENTS A E.C.N. #10567. B E.C.N. #10695. 12.B.99 1.2.01 C E.C.N. #10814.

Contextual Info: Frequency Mixer SAM-2 Typical Performance Data RF IN (MHz) 1.0 2.0 5.0 10.0 50.3 90.5 130.8 171.0 211.3 251.5 332.0 372.3 412.6 452.8 493.1 533.3 573.6 613.8 654.1 694.3 774.9 815.1 855.4 895.6 935.9 976.1 1016.4 1056.6 1096.9 1137.2 1217.7 1257.9 1298.2

1569.7

Contextual Info: Frequency Mixer JMS-2W Typical Performance Data RF IN (MHz) 5.0 10.0 50.4 90.6 130.9 171.1 211.4 251.6 291.9 332.1 372.4 412.6 452.9 493.1 533.4 573.6 654.2 694.4 734.7 774.9 815.2 855.4 895.7 935.9 976.2 1016.4 1056.7 1096.9 1137.2 1177.4 1217.7 1257.9

PLP-300

Contextual Info: Plug-In Low Pass Filter PLP-300+ Typical Performance Data MHz INSERTION LOSS (dB) RETURN LOSS (dB) 1.0 49.0 97.0 145.0 193.0 241.0 270.0 280.0 297.0 300.0 340.0 360.0 380.0 400.0 410.0 450.0 490.0 520.0 530.0 540.0 550.0 700.0 864.0 960.0 1056.0 1110.0 1120.0

ES1K

Contextual Info: Certificate TH97/10561QM ES1K - ES1M Certificate TW00/17276EM SURFACE MOUNT SUPER FAST RECTIFIERS PRV : 800 - 1000 Volts Io : 1.0 Ampere SMA * * * * * * * 5.4 ± 0.2 FEATURES : 4.4 ± 0.2 1.3 ± 0.2 High current capability High surge current capability High reliability

ts0524

Abstract: TS-0452 TS-0524 TS-0525
Contextual Info: 3M Molded Assembly 2 mm x 2 mm 2M Series S Available in multiple sizes S Sockets mate with standard 2 mm × 2 mm headers and plugs S Molded-in strain relief Date Modified:June 21, 2002 TS-1056-04 Sheet 1 of 2 Physical Connector Technical Specification: TS-0525 for 2 mm × 2 mm Molded-On Socket

SML-LXT0805AW-TR

Contextual Info: PART NUMBER REV. S M L -L X T 0 8 05 A W -T R c UNCONTROLLED DOCUMENT 2.00 [0.079] C A T H E ID E 1.40 [0,055] REV. MARK El A B C 1.25 E0.049] E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #10567. E.C.N. #10695. E.C.N. #10814. PARAMETER MIN PEAK WAVELENGTH 0.80 [0.031]

EIA-364-5

Abstract: EIA-364-8 EIA-364-70 EIA-364-55 EIA-364-13 EIA-364-27 EIA-364-28 EIA-364-18 EIA-364-23 terminal EIA-364-23 connector
Contextual Info: Product Specification 108-1056-2 15Aug07 Rev A Alternate Material Two Circuit Heavy Duty Burner Connector 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for the Tyco Electronics Alternate Material Two Circuit Heavy Duty Burner Connector which provides a reliable means of

Contextual Info: NAND02G-B2D 2 Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Preliminary Data Features • High density NAND Flash memory – Up to 2 Gbit memory array – Cost-effective solution for mass storage applications ■

atmel e5550

Contextual Info: Features • • • • • • • • • • • • Low Power, Low Voltage Operation Contactless Power Supply Contactless Read/Write Data Transmission Radio Frequency RF : 100 kHz to 150 kHz 1056 Bits of EEPROM Memory 992 Bits (31 Bits ´ 32 Bits) of User Memory

NAND02GW3B2C

Abstract: VFBGA63 ST 2gbit NAND NAND02GR4B2C NAND01G-B2B NAND01GW3B2B NAND01Gr4B2B NAND01GR3B2B NAND02G-B2C NAND01G
Contextual Info: NAND01G-B2B NAND02G-B2C 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Features • ■ High Density NAND Flash memories – Up to 2 Gbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width

1N5819W

Contextual Info: Certificate TH97/10561QM 1N5819W SURFACE MOUNT SCHOTTKY BARRIER DIODE Low Power Loss, Low Forward Voltage Drop High Efficiency High Surge Capability High Current Capability Pb / RoHS Free * * * * 1.15 1.05 MECHANICAL DATA : 0.135 0.127 1.65 1.55 2.7 2.6 0.6

Contextual Info: 20.0MM CIRCULAR BLACK Status Reserved Part no. 10566 Drawing no. 60544 No. of optics 1 No. of legs Related Optics 10194 20.0 mm Frosted Narrow Catadioptic 10195 20.0 mm Frosted Medium Catadioptic 10209 20.0 mm Ripple Wide Catadioptic 10196 20.0 mm Frosted Wide Catadioptic

ULGA52

Abstract: NAND08GW3B2C ONFI nand flash NAND04GW3B2DN6 NAND08G-B2C NAND08GR3B4C NAND08GW3B4C
Contextual Info: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications

TGL34-200CA

Abstract: TGL34-6 TGL34-8 tgl34
Contextual Info: TH97/10561QM TGL34- 6.8 ~ TGL34-200CA TW00/17276EM IATF 0060636 SGS TH07/1033 SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VBR Nom : 6.8 to 200 V PPPM : 150 W MiniMELF (SOD-80) φ 1.6 ± 0.1 FEATURES : * 150 W peak pulse power capability with a 10/1000µs waveform

1N4148W

Contextual Info: Certificate TH97/10561QM 1N4148W Certificate TW00/17276EM SMALL SIGNAL FAST SWITCHING DIODE SOD-123 PRV : 100 Volts IO : 150 mA 1.65 1.55 0.6 0.5 2.7 2.6 FEATURES : 1.15 1.05 0.135 0.127 * Silicon Epitaxial Planar Diode * Fast switching diodes. * Pb / RoHS Free

marking code SJ

Abstract: SJ Schottky Barrier Diodes marking code SK LL101A LL101C SD101 SD101AWS SD101BWS SD101CWS marking code SL
Contextual Info: Certificate TH97/10561QM SD101AWS - SD101CWS SCHOTTKY BARRIER DIODES * For general purpose applications * The SD101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. * The low forward voltage drop and fast switching

SBL1640CT

Abstract: SBL1630CT
Contextual Info: Certificate TH97/10561QM SBL1630CT ~ SBL1640CT Certificate TW00/17276EM DUAL SCHOTTKY BARRIER RECTIFIERS PRV : 30 ~ 40 Volts Io : 16 Amperes TO-220AB 0.154 3.91 DIA. 0.415(10.54)MAX. 0.055(1.39) 0.148(3.74) 0.045(1.14) 0.113(2.87) 0.103(2.62) 0.145(3.68) FEATURES :

MBR735

Abstract: MBR745 MBR750 MBR760
Contextual Info: Certificate TH97/10561QM MBR735 ~ MBR760 Certificate TW00/17276EM SCHOTTKY BARRIER RECTIFIER DIODES TO-220AC PRV : 35~60 Volts Io : 7.5 Amperes 0.154 3.91 DIA. 0.415(10.54)MAX. 0.148(3.74) FEATURES : 0.113(2.87) 0.103(2.62) * Plastic package has Underwriters Laboratory

zener diode BZ 22

Abstract: MMSZ4678 MMSZ4679 MMSZ4680 MMSZ4681 MMSZ4682 MMSZ4683 MMSZ4684 MMSZ4717
Contextual Info: Certificate TH97/10561QM MMSZ4678 - MMSZ4717 Certificate TW00/17276EM ZENER DIODES SOD-123 VZ : 1.8 to 43 V PD : 500 mW 0.6 0.5 2.7 2.6 1.15 1.05 * Total Power Dissipation 500 mW on FR-4 or FR-5 Board * Wide Zener Reverse Voltage Range 1.8 V to 43 V * Package Designed for Optimal Automated Board Assembly

3045PT

Abstract: 3060PT MBR3035PT MBR3060PT
Contextual Info: Certificate TH97/10561QM MBR3035PT ~ MBR3060PT DUAL SCHOTTKY BARRIER RECTIFIERS PRV : 35 ~ 60 Volts Io : 30 Amperes TO-247AD TO-3P 0.203(5.16) 0.645 (16.4) 0.193(4.90) 0.625 (15.9) 0.323 (8.2) 0.313 (7.9) 30° 0.245(6.2) 0.225(5.7) FEATURES : * Plastic package has Underwriters Laboratory

SBL2030PT

Abstract: SBL2040PT
Contextual Info: Certificate TH97/10561QM SBL2030PT ~ SBL2040PT DUAL SCHOTTKY BARRIER RECTIFIERS PRV : 30 ~ 40 Volts Io : 20 Amperes TO-247AD TO-3P 0.245(6.2) 0.225(5.7) FEATURES : * Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 * Dual rectifier construction, positive center tap

TA1014A

Abstract: d 1071
Contextual Info: TAI-SAW TECHNOLOGY CO., LTD. No. 3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, 324, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales@mail.taisaw.com Web: www.taisaw.com SAW Filter 1056 MHz MODEL NO.: TA1014A REV. NO.:1

1N5913B

Abstract: 1N5914B 1N5915B 1N5916B 1N5956B 836 zener
Contextual Info: Certificate TH97/10561QM 1N5913B - 1N5956B Certificate TW00/17276EM SILICON ZENER DIODES DO - 41 VZ : 3.3 - 200 Volts PD : 3 Watts 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) FEATURES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation