RO4350 Search Results

Contextual Info: TQP3M6005 Mid Band Dual LNA 1700-2000 MHz Applications •  Base Station receivers Tower-mounted amplifiers 16-pin 4x4mm leadless SMT package Product Features       Functional Block Diagram 0.36 dB Noise Figure (single channel) 1700-2000 MHz

Contextual Info: TGA2706-SM 2 Watt C-Band Packaged Power Amplifier Key Features • • • • • • • Measured Performance Frequency Range: 5.5 – 8.5 GHz Power: 34 dBm Psat, 32 dBm P1dB Gain: 31 dB TOI: 42 dBm NF: 7 dB Bias: Vd = 6 V, Id = 1.26 A, Vg = +0.6 V Typical

X3DC18E2S

Contextual Info: Model X3DC18E2S Rev B PRELIMINARY Doherty Combiner b Description The X3DC18E2S is a low profile, high performance Doherty Combiner in a new easy to use, manufacturing friendly surface mount package. The X3DC18E2S is designed particularly for Doherty Amplifier

Contextual Info: MGA-31489 0.1W High Gain Driver Amplifier 1.5GHz ~ 3GHz Data Sheet Description Features Avago Technologies MGA-31489 is a high performance Driver Amplifier MMIC, housed in a standard SOT-89 plastic package. The device features flat high gain with excellent

Contextual Info: ALM-32120 0.7GHz – 1.0GHz 2 Watt High Linearity Amplifier Data Sheet Description Features Avago Technologies’ ALM-32120 is a high linearity 2 Watt PA with good OIP3 performance and exceptionally good PAE at 1dB gain compression point, achieved through the

Rogers RO4350B microstrip

Contextual Info: GX03 Ultra Broadband Capacitor ADVANTAGES APPLICATIONS • Ultra Broadband performance • Ultra Low Insertion Loss • Semi Conductor Data Communications Customers • X7R Characteristics • Receiver Optical Sub-Assemblies • Excellent Return Loss • Transimpedance Amplifier

Contextual Info: ALM-2712 GPS Filter-LNA-Filter Front-End Module Data Sheet Description Features Avago Technologies’ ALM-2712 is an ultra low-noise GPS front-end module that combines a low-noise amplifier LNA with GPS FBAR filters. The LNA uses Avago Technologies’ proprietary GaAs Enhancement-mode pHEMT

MGA-633P8

Abstract: CM05CH330J50AH RM73B1ETTP100J mga-633p8-tr1g mga 633p8-blkg GRM1555C1H101JD01 MGA633P8
Contextual Info: MGA-633P8 Ultra Low Noise, High Linearity Active Bias Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-633P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of

Contextual Info: Document Number: AFT26P100−4WS Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

Contextual Info: User's Guide SLVU859 – February 2013 TPD4E05U06DQAEVM The TPD4E05U06 is an ESD protection device with ultra low capacitance. This device is constructed with a central ESD clamp with two hiding diodes to reduce the capacitive loading. It is rated to dissipate ESD

Contextual Info: ALM-1912 GPS Filter–LNA Front–End Module Data Sheet Description Features Avago Technologies’ ALM-1912 is a GPS front-end module that combines a GPS FBAR filter with high-gain low-noise amplifier LNA .The LNA uses Avago Technologies’ proprietary GaAs Enhancement-mode pHEMT process to

Contextual Info: VMMK-2503 1 to 12 GHz GaAs Wideband Amplifier in Wafer Level Package Data Sheet Description Features Avago’s VMMK-2503 is an easy-to-use broadband, high linearity amplifier in a miniaturized wafer level package WLP . The wide band and unconditionally stable performance makes this amplifier suitable as a gain block or a

Contextual Info: MGA-636P8 High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-636P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . This LNA has low noise and high linearity achieved through the use of Avago Technologies’ proprietary 0.25 mm GaAs

Contextual Info: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

jrc 78L08

Abstract: RESISTOR POTENTIOMETER GRM32ER71H106KA12L stripline power combiner splitter GRM31MR71H105KA88L grm32er71h106ka transistor J333 AN10923 GRM32ER71H106KA12 jrc78L08
Contextual Info: AN10923 1.5 GHz Doherty power amplifier for base station applications using the BLF6G15L-250PBRN Rev. 1 — 14 March 2011 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, Power amplifier, W-CDMA, LTE, Base station, BLF6G15L-250PBRN

TL205

Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147
Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's

stripline hybrid

Abstract: 23 01 01
Contextual Info: PRODUCT SPECIFICATION QUADRATURE HYBRID / COMBINER SURFACE MOUNT, 3 dB FEATURES • • • • • UMTS & 3G Communications Band Low Loss, High Power, Suspended Stripline Design Surface Mount, Pic-n-Place compatible Low Passive Intermodulation PIM Design

RF power amplifier MHz

Contextual Info: Model X3DC21E2S Rev A Doherty Combiner b Description The X3DC21E2S is a low profile, high performance Doherty Combiner in a new easy to use, manufacturing friendly surface mount package. The X3DC21E2S is designed particularly for Doherty Amplifier applications, where tightly controlled phase and amplitude imbalance

transistor TL131

Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110

jammer slot machine

Contextual Info: ALM-3012 GNSS LNA-Filter Front-End Module with optional Differential Outputs Data Sheet Description Features Avago Technologies’ ALM-3012 is an ultra low-noise GNSS Global Navigation Satellite System front-end module that combines a low-noise amplifier (LNA) with

tc 106-10

Contextual Info: MGA-31489 0.1W High Gain Driver Amplifier 1.5GHz ~ 3GHz Data Sheet Description Features Avago Technologies MGA-31489 is a high performance Driver Amplifier MMIC, housed in a standard SOT-89 plastic package. The device features flat high gain with excellent

Contextual Info: VMMK-2203 0.9-11 GHz E-pHEMT Wideband Amplifier in Wafer Level Package Data Sheet Description Features Avago Technologies has combined its industry leading E-pHEMT technology with a revolutionary wafer level package WLP . • 1 x 0.5 mm Surface Mount Package

Contextual Info: MGA-633P8 Ultra Low Noise, High Linearity Active Bias Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-633P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of

Contextual Info: ALM-11236 1710 MHz – 1850 MHz Low Noise, High Linearity Amplifier Module with Fail-Safe Bypass Feature Data Sheet Description Features Avago Technologies’ ALM-11236 is an easy-to-use GaAs MMIC Tower Mount Amplifier TMA LNA Module with low IL bypass path. The module has low noise and high linearity