RN242 Search Results

2427

Abstract: RN1221 RN2421 RN2422 RN2423 RN2424 RN2425 RN2426 RN2427
Contextual Info: RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2421,RN2422,RN2423,RN2424 RN2425,RN2426,RN2427 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications High current type (IC(MAX) = −800mA) With built-in bias resistors

Contextual Info: RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2421,RN2422,RN2423,RN2424 RN2425,RN2426,RN2427 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l High current type (IC(MAX) = −800mA) l With built-in bias resistors

2427

Abstract: RN1421 RN1427 RN2421 RN2422 RN2423 RN2424 RN2425 RN2426 RN2427
Contextual Info: RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2421,RN2422,RN2423,RN2424 RN2425,RN2426,RN2427 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm High current type (IC(MAX) = −800mA) With built-in bias resistors

Contextual Info: RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2421,RN2422,RN2423,RN2424 RN2425,RN2426,RN2427 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm High current type (IC(MAX) = −800mA) With built-in bias resistors

Contextual Info: PIN diode RN242CS zApplications High frequency switching zDimensions Unit : mm zLead size figure (Unit : mm) 0.45 0.5 0.45 0.55 zFeatures 1) Ultra small mold type. (VMN2) 2) Low high frequency resistance and lowcapacitance VMN2 zStructure zConstruction Silicon epitaxial planer

RN242CS

Contextual Info: REFERENCE 29-Sep-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RN242CS No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current

2427

Abstract: RN1221 RN2421 RN2422 RN2423 RN2424 RN2425 RN2426 RN2427 RN2425 equivalent
Contextual Info: RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2421,RN2422,RN2423,RN2424 RN2425,RN2426,RN2427 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm High current type (IC(MAX) = −800mA) With built-in bias resistors

RN2425

Abstract: RN1421 RN1427 RN2421 RN2422 RN2423 RN2424 RN2426 RN2427 RN2421-RN2427
Contextual Info: RN2421～RN2427 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2421,RN2422,RN2423,RN2424 RN2425,RN2426,RN2427 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用

Contextual Info: SILICON PNP EPITAXIAL TYPE RN2421 RN2427 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT U n i t in m m AND DRIVER CI RCU IT APPLICATIONS. +0. 5 2.5-0.3 • H i g h C u r r e n t T y p e I q ( M A X . = - 80 0 m A ) •W i t h B u i l t - i n B a i a s R e s i s t o r s

Contextual Info: RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2421, RN2422, RN2423, RN2424 RN2425, RN2426, RN2427 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z High current type (IC(MAX) = −800mA)

Contextual Info: RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2421,RN2422,RN2423,RN2424 RN2425,RN2426,RN2427 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm High current type (IC(MAX) = −800mA) With built-in bias resistors

RN1421

Abstract: RN1427 RN2421 RN2422 RN2423 RN2424 RN2425 RN2426 RN2427
Contextual Info: RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2421,RN2422,RN2423,RN2424 RN2425,RN2426,RN2427 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l High current type (IC(MAX) = −800mA) l With built-in bias resistors

Contextual Info: PIN diode RN242CS Applications High frequency switching Dimensions Unit : mm Lead size figure (Unit : mm) 0.45 0.5 0.45 0.55 Features 1) Ultra small mold type. (VMN2) 2) Low high frequency resistance and lowcapacitance VMN2 Structure Construction Silicon epitaxial planer

RN242CS

Contextual Info: RN242CS Diodes PIN diode RN242CS zExternal dimensions Unit : mm zApplication High frequency switching zLead size figure (Unit : mm) 0.55 0.45 0.16±0.05 0.6±0.05 0.45 1.0±0.05 0.9±0.05 0.5 zFeatures 1) Ultra small mold type. (VMN2) 2) Low high frequency resistance and low

VMD2

Abstract: RN242CS VMN2
Contextual Info: Low Capacitance / Low Forward Resistance PIN Diodes Sub-miniature Excellent high-frequency charac ristics Surface mount package VMN2 1006 IF-Rf f=900MHz 3.5 RN141G/S RN152G 3 RN142G/S RN242CS Rf (Ω) 2.5 VMN2 VMD2 2 n External Dimensions 1.5 1 0.5 2 4 6

Contextual Info: TOSHIBA RN2421-RN2427 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2421, RN2422, RN2423, RN2424 RN2425, RN2426, RN2427 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm + 0.5 High Current Type (Iq (M ax.)= _ 800mA)

RN242

Contextual Info: RN242CS PIN diode RN242CS zDimensions Unit : mm zLead size figure (Unit : mm) 0.55 0.45 0.5 0.45 zApplications High frequency switching zFeatures 1) Ultra small mold type. (VMN2) 2) Low high frequency resistance and lowcapacitance VMN2 zStructure zConstruction

Contextual Info: RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2421,RN2422,RN2423,RN2424 RN2425,RN2426,RN2427 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z High current type (IC(MAX) = −800mA) z With built-in bias resistors

Contextual Info: RN242CS Diodes PIN diode RN242CS zExternal dimensions Unit : mm zApplication High frequency switching zLead size figure (Unit : mm) 0.55 0.45 0.16±0.05 0.6±0.05 0.45 1.0±0.05 0.9±0.05 0.5 zFeatures 1) Ultra small mold type. (VMN2) 2) Low high frequency resistance and low

RN242CS

Abstract: 8312MV
Contextual Info: PIN diode RN242CS zDimensions Unit : mm zLead size figure (Unit : mm) 0.55 0.45 0.5 0.45 zApplications High frequency switching zFeatures 1) Ultra small mold type. (VMN2) 2) Low high frequency resistance and lowcapacitance VMN2 zStructure zConstruction Silicon epitaxial planer

RN2421-2427

Abstract: 2427 RN1421 RN1427 RN2421 RN2422 RN2423 RN2424 RN2425 RN2426
Contextual Info: RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2421,RN2422,RN2423,RN2424 RN2425,RN2426,RN2427 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z High current type (IC(MAX) = −800mA) z With built-in bias resistors

Contextual Info: TOSHIBA RN2421 ~RN2427 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2421, RN2422, RN2423, RN2424 RN2425, RN2426, RN2427 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS + 0.5 2.5-0.3 + 0.25 .1,5-0.15.

Contextual Info: AEC-Q101 Qualified PIN diode RN242CSFH zApplications High frequency switching zLead size figure Unit : mm zDimensions (Unit : mm) 0.45 0.5 0.45 0.55 zFeatures 1) Ultra small mold type. (VMN2) 2) Low high frequency resistance and lowcapacitance VMN2 zStructure

Contextual Info: RN242CS Diodes PIN diode RN242CS zExternal dimensions Unit : mm zApplication High frequency switching zLead size figure (Unit : mm) 0.16±0.05 0.6±0.06 1.0±0.05 0.5 0～0.1 0.45 zFeatures 1) Ultra small mold type. (VMN2) 2) Low high frequency resistance and low