RN23 Search Results
RN23 Datasheets (161)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| RN2301 | Toshiba | Silicon PNP-transistor+integrated resistor | Original | 264.66KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2301 | Toshiba | PNP transistor | Original | 435.86KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2301 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 89.18KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2301 | Unknown | The Transistor Manual (Japanese) 1993 | Scan | 113.38KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2301,LF | Toshiba Semiconductor and Storage | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS PNP 0.1W USM | Original | 455.09KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2301,LXHF | Toshiba Semiconductor and Storage | AUTO AEC-Q SINGLE PNP , R1=4.7KO | Original | 1.43MB | 11 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2301(T5LHITJ,F) | Toshiba | RN2301 - Trans Digital BJT PNP 50V 100mA 3-Pin USM T/R | Original | 460.3KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2301(TE85L) | Toshiba | RN2301 - TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal | Original | 460.3KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2301(TE85L2) | Toshiba | RN2301 - TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal | Original | 460.3KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2301(TE85L,F) | Toshiba | Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 100MW USM | Original | 7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2301(TE85R) | Toshiba | RN2301 - TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal | Original | 460.3KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2302 | Toshiba | Silicon PNP-transistor+integrated resistor | Original | 264.64KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2302 | Toshiba | PNP transistor | Original | 435.86KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2302 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 89.18KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2302 | Unknown | The Transistor Manual (Japanese) 1993 | Scan | 113.38KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2302,LF | Toshiba Semiconductor and Storage | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - X34 PB-F USM TRANSISTOR PD 100MW | Original | 455.09KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2302,LXHF | Toshiba Semiconductor and Storage | AUTO AEC-Q SINGLE PNP , R1=10KOH | Original | 1.43MB | 11 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2302(TE85L,F) | Toshiba | Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 100MW USM | Original | 7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2303 | Toshiba | Silicon PNP-transistor+integrated resistor | Original | 264.65KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RN2303 | Toshiba | PNP transistor | Original | 435.86KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN23 Price and Stock
Toshiba America Electronic Components RN2306(TE85L,F)Transistor: PNP; 50V; 100mW |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RN2306(TE85L,F) | 6,888 | 806 |
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Buy Now | ||||||
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RN2306(TE85L,F) | 5,510 |
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Buy Now | |||||||
Toshiba America Electronic Components RN2303(TE85L,F)Transistor: PNP; bipolar; 50V; 100mW; SC70 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RN2303(TE85L,F) | 2,575 | 806 |
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Buy Now | ||||||
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RN2303(TE85L,F) | 2,575 | 834 |
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Buy Now | ||||||
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RN2303(TE85L,F) | 2,965 |
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Buy Now | |||||||
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RN2303(TE85L,F) | 2,060 |
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Buy Now | |||||||
Toshiba America Electronic Components RN2305(TE85L,F)Transistor: PNP; bipolar; 50V; 100mA; 100mW; SC70 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RN2305(TE85L,F) | 820 | 806 |
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Buy Now | ||||||
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RN2305(TE85L,F) | 3,191 |
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Buy Now | |||||||
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RN2305(TE85L,F) | 656 |
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Buy Now | |||||||
Carlo Gavazzi Holding AG VC12RN230Sensor: capacitive; Range: 4÷12mm; 230VAC; OUT: SPDT; Ioper.max: 2A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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VC12RN230 | 6 | 1 |
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Buy Now | ||||||
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VC12RN230 | Bulk | 10 Weeks | 5 |
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Get Quote | |||||
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VC12RN230 |
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Schneider Electric NSYCRN23150Enclosure: wall mounting; X: 200mm; Y: 300mm; Z: 150mm; Spacial CRN |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NSYCRN23150 | 1 | 1 |
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Buy Now | ||||||
RN23 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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IC LM 351Contextual Info: RN2314,2315,2316 RN2317,2318 RN2314 SW ITCHIN G , INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • W ith Built-in Bias Resistors • Simplify Circuit Design • Reduce a Q uantity of Parts and M anufacturing Process • Complementary to RN1314~RN1318 |
OCR Scan |
rn2314rn2317rn1314rn1318+4 | |
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Contextual Info: SILICON PNP EPITAXIAL TYPE SWITCHING, INVERTER CIRCUIT, RN2310, RN2311 INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Unit in mm .± 2 1 0.1 • With Built-in Bias Resistors 1.25Ì0.1 • Simplify Circuit Design -E3 • Reduce a Quantity of Parts and Manufacturing Process |
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rn2310rn2311rn1310rn1311 | |
RN1312
Abstract: RN1313 RN2312 RN2313
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rn2312rn2313rn1312rn1313+1 | |
RN2301
Abstract: rn2304 RN1301 RN2302 RN2303 RN2305 RN2306
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rn2301rn2306rn2302rn2303+3 | |
RN1321A
Abstract: RN1327A RN2321A RN2322A RN2323A RN2324A RN2325A RN2326A RN2327A 2327A
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rn2321arn2327arn2321arn2322arn2323a+7 | |
RN1322A
Abstract: RN1323A RN1324A RN1325A RN1326A RN1327A RN2321A RN2324A RN2327A RN1321A
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rn1321arn1327arn1321arn1322arn1323a+7 | |
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Contextual Info: RN2314~RN2318 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2314, RN2315, RN2316, RN2317, RN2318 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors |
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rn2314rn2318rn2315rn2316+3 | |
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Contextual Info: RN2307~RN2309 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2307,RN2308,RN2309 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process |
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rn2307rn2309rn2308rn1307+1 | |
toshiba Transistor Silicon pct
Abstract: RN1312 RN1313 RN2312 RN2313
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rn2312rn2313rn1312rn1313+2 | |
RN1307
Abstract: RN1309 RN2307 RN2308 RN2309
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rn2307rn2309rn2308rn1307+1 | |
RN2307
Abstract: RN2357
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rn2357rn2307sc-70-10ma+1 | |
RN1314
Abstract: RN1318 RN2314 RN2315 RN2316 RN2317 RN2318
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rn2314rn2318rn2315rn2316+3 | |
RN1310
Abstract: RN2310 RN2311
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rn2310rn2311rn13101311rn1310 | |
RN2301
Abstract: RN2302 RN2303 RN2304 RN2305 RN2306
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rn2301rn2306rn2302rn2303+3 | |
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KN230Contextual Info: SILICON PNP EPITAXIAL TYPE RN2301-RN2306 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT 2 . 110.1 AND DRIVER CIRCUIT APPLICATIONS. 1.25 J:0.1 • With Built-in Bias Resistors CO • Simplify Circuit Design +1 • Reduce a Quantity of Parts and Manufacturing Process |
OCR Scan |
rn2301-rn2306rn1301rn2301rn2302+7 | |
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Contextual Info: RN1312,1313 RN1312 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 2.1 ± 0.1 • With Built-in Bias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts and Manufacturing Process • Complementary to RN2312, RN2313 |
OCR Scan |
rn1312rn2312rn2313sc-70+1 | |
ic T M 2313
Abstract: T M 2313 SC 2313
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OCR Scan |
rn2312rn1312rn1313sc-70+4 | |
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Contextual Info: TO SHIBA RN2314-RN2318 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2314, RN2315, RN2316, RN2317, RN2318 SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • With Built-in Bias Resistors • Sim plify Circuit Design |
OCR Scan |
rn2314-rn2318rn2314rn2315rn2316+2 | |
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Contextual Info: RN2310,RN2311 T O SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2310, RN2311 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • • • • With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process |
OCR Scan |
rn2310rn2311rn1310rn1311 | |
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Contextual Info: T O SH IB A RN2301 ~RN2306 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2301, RN2302, RN2303 RN2304, RN2305, RN2306 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • With Built-in B ias Resistors • Sim plify Circuit Design |
OCR Scan |
rn2301rn2306rn2302rn2303+2 | |
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Contextual Info: T O SH IB A RN2307-RN2309 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2307, RN2308, RN2309 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • With Built-in B ias Resistors • Sim plify Circuit Design • Reduce a Quantity of P arts M anufacturing Process |
OCR Scan |
rn2307-rn2309rn2307rn2308rn2309 | |
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Contextual Info: RN2310,RN2311 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2310,RN2311 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process |
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rn2310rn2311rn1310rn1311+1 | |
RN1312
Abstract: RN1313 RN2312 RN2313
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rn2312rn2313rn1312rn1313+1 | |
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Contextual Info: RN2307~RN2309 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2307, RN2308, RN2309 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors z Simplify circuit design |
Original |
rn2307rn2309rn2308rn1307+1 | |