RN1412 Search Results

Contextual Info: RN1412,RN1413 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1412, RN1413 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplified circuit design z Reduce a quantity of parts and manufacturing process

RN1412

Abstract: RN1413 RN2412 RN2413
Contextual Info: RN1412,RN1413 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1412, RN1413 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplified circuit design z Reduce a quantity of parts and manufacturing process

ic 2412

Contextual Info: RN2412,2413 RN 2412 U nit in mm SW ITCHIN G , INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • With Built-in Bias Resistors • Simplify Circuit Design HO • Reduce a Quantity of Parts and Manufacturing Process • Complementary to RN1412, RN1413

RN1412

Abstract: RN1413 RN2412 RN2413
Contextual Info: RN1412,RN1413 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1412,RN1413 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: RN1412,RN1413 T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1412, RN1413 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 2.5 + 0.5 — 0.3 + 0 .85 1 . 5 - 0.1 5 With Built-in Bias Resistors

Contextual Info: RN1412,RN1413 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1412,RN1413 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process

RN1412

Abstract: RN1413 RN2412 RN2413
Contextual Info: RN1412,RN1413 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1412,RN1413 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: RN1412,RN1413 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1412, RN1413 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplified circuit design z Reduce a quantity of parts and manufacturing process

Contextual Info: RN1412,RN1413 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1412, RN1413 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplified circuit design Reduce a quantity of parts and manufacturing process

TOSHIBA Transistor

Abstract: TO-236MOD
Contextual Info: RN1412,RN1413 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1412, RN1413 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplified circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: RN1412,RN1413 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1412, RN1413 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm With built-in bias resistors Simplified circuit design Reduce a quantity of parts and manufacturing process

transistor marking 1am

Contextual Info: TO SH IB A RN1412,RN1413 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN 1Am 17 1 3v r m g uRm N u -m 1u A•■ u m u 'm m Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. + 0.5 3.5-as ■ I 0.ÍÍ5

UZ5.1

Contextual Info: RN1412,1413 RN1412 U nit in mm S W IT C H IN G , IN V E R T E R C IR C U IT , IN T E R F A C E C IR C U IT A N D D R IV E R C IR C U IT A P P L IC A T IO N S . + <15 2.5 -Q 3 + ÛZ5 1 .5 -G 1 5 W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process

Contextual Info: RN1412,RN1413 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1412,RN1413 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

TO-236MOD

Contextual Info: RN2412,RN2413 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2412, RN2413 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplified circuit design Reduce a quantity of parts and manufacturing process

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

toshiba YK smd marking

Abstract: bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV
Contextual Info: 抵抗内蔵型トランジスタ BRT SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

Contextual Info: TOSHIBA RN2412,RN2413 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN7A17 u m u 'm g RN7A13 m « • w ■ ■ « r Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + G5 2.5 —0.3 • With Built-in Bias Resistors

RN2226

Abstract: 2sa1015 sot-23 rn4601 diode 2sa1015
Contextual Info: B ia s R e s ì s t o ! B u ilt-in T ra n s is to r B R T General Use Type F6 Upper side: Similar to 2SC1815(NPN) Middle side: Similar to 2SC1815 + 2SA1015{NPN+PNP) Lower side: Similar to 2SA1015(PNP) 50 100 Similar TR V c e o (V ) Rating lcMAX(mA) Package

RN1417

Abstract: rn4601
Contextual Info: [1 ] Alphanum eric Product List [ 1 ] Alphanum eric Product List Device Page Device Page Device Page RN1001 75 RN1206 113 RN1318 152 RN1002 75 RN1207 118 RN1401 159 RN1003 75 RN1208 118 RN1402 159 RN1004 75 RN1209 118 RN1403 159 RN1005 75 RN1210 122 RN1404